Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700441
D. McKnight, K. Johnson, S. Serati
Liquid crystal on silicon spatial light moclulators are made hy placing r2 thin layer of liquid crystal directly on top of a silicon integrated circuit chip. For a recent review of this technology see, for example, reference [l]. We have designed and constructed a 256 by 256 binary SLM which uses a ferroelectric liquid crystal as the light modulating layer specifically for application in an optical correlator. We have also constructed a 128 by 128 analog SLM which in the correlator application promises significant advantages over binary only devices.
{"title":"Liquid Crystal Over Silicon Spatial Light Modulators For Optical Correlators","authors":"D. McKnight, K. Johnson, S. Serati","doi":"10.1109/LEOSST.1994.700441","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700441","url":null,"abstract":"Liquid crystal on silicon spatial light moclulators are made hy placing r2 thin layer of liquid crystal directly on top of a silicon integrated circuit chip. For a recent review of this technology see, for example, reference [l]. We have designed and constructed a 256 by 256 binary SLM which uses a ferroelectric liquid crystal as the light modulating layer specifically for application in an optical correlator. We have also constructed a 128 by 128 analog SLM which in the correlator application promises significant advantages over binary only devices.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114509690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700498
A. Chraplyvy, R. Tkach
{"title":"Capacity Limits Due To Nonlinearities In Optical Networks","authors":"A. Chraplyvy, R. Tkach","doi":"10.1109/LEOSST.1994.700498","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700498","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114810459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700479
F. Sauer, N. Craft, D. Guise, J. Avins, M. LaValva, J. Turlip
Free-space optical ir erconnects promise highly parallel implementations of multistage interconnection networks (MINs) for sorting and switching applications. The largest network demonstrated so far [ l ] had 1,024 channels in parallel, ran at a clock rate of 100 kHz, and was based on SEED devices [2]. The practical difficulties associated with the employment of SEED devices (tight wavelength and temperature tolerances, complex optical systems for the modulator type devices) motivate us to investigate the use of active light emitting devices. In particular, the novel vertical cavity surface emitting laser (VCSEL) [3] is a promising candidate for free-space optical interconnects. In this paper, we present the first demonstration of a MIN which employs VCSEL based optical interconnects. Figure 1 shows schematically the MIN we have implemented. Six switching stages, each consisting of four parallel 2x2 crossbar switching nodes, are interconnected in a non-local way. In our system, the numbers to be sorted are represented in binary format and are synchronously fed into the network with most significant bits leading. The control of the network is distributed. Each node compares the two numbers arriving at its input ports in a bitsequential way and routes the greater number through the upper, the smaller number through the lower output port [4]. From another point of view, the network performs a core function of a self-routing packet switch. The network sorts according to the leading bits (address headers), and it delivers the trailing bits (payloads) to the corresponding destination ports.
{"title":"Multistage Sorting Module With VCSEL Based Free-space Optical Interconnects","authors":"F. Sauer, N. Craft, D. Guise, J. Avins, M. LaValva, J. Turlip","doi":"10.1109/LEOSST.1994.700479","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700479","url":null,"abstract":"Free-space optical ir erconnects promise highly parallel implementations of multistage interconnection networks (MINs) for sorting and switching applications. The largest network demonstrated so far [ l ] had 1,024 channels in parallel, ran at a clock rate of 100 kHz, and was based on SEED devices [2]. The practical difficulties associated with the employment of SEED devices (tight wavelength and temperature tolerances, complex optical systems for the modulator type devices) motivate us to investigate the use of active light emitting devices. In particular, the novel vertical cavity surface emitting laser (VCSEL) [3] is a promising candidate for free-space optical interconnects. In this paper, we present the first demonstration of a MIN which employs VCSEL based optical interconnects. Figure 1 shows schematically the MIN we have implemented. Six switching stages, each consisting of four parallel 2x2 crossbar switching nodes, are interconnected in a non-local way. In our system, the numbers to be sorted are represented in binary format and are synchronously fed into the network with most significant bits leading. The control of the network is distributed. Each node compares the two numbers arriving at its input ports in a bitsequential way and routes the greater number through the upper, the smaller number through the lower output port [4]. From another point of view, the network performs a core function of a self-routing packet switch. The network sorts according to the leading bits (address headers), and it delivers the trailing bits (payloads) to the corresponding destination ports.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131984918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700492
P. Meissner, H. Bunning, M. Burmeister, T. Hermes, U. Hilbk, J. Saniter, F. Westphal
{"title":"Experimental System For An OFDM-local Area Network","authors":"P. Meissner, H. Bunning, M. Burmeister, T. Hermes, U. Hilbk, J. Saniter, F. Westphal","doi":"10.1109/LEOSST.1994.700492","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700492","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128085443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700458
T. K. Woodward, R. A. Novotny, A. Lentine, L. Chirovsky, L. D’asaro, S. Hui, M. Focht, G. Guth, L. E. Smith, R. Leibenguth
Recently, we have described the integration of active optical elements (multiple quantum well (MQW) modulators) together with FET-based GaAs electronicsreferred to as field-effect-transistor self-electro-optic effect device (FET-SEED) technology. [ 1 , 21 An important measure of the performance of this technology is provided by studies of ring oscillators. In addition, it provides an example of the type of novel circuits made possible by the provision of an integrated optical output. We describe here the first measurements of FET-SEED ring oscillators.
{"title":"FET-SEED Ring Oscillators With Optical Readout","authors":"T. K. Woodward, R. A. Novotny, A. Lentine, L. Chirovsky, L. D’asaro, S. Hui, M. Focht, G. Guth, L. E. Smith, R. Leibenguth","doi":"10.1109/LEOSST.1994.700458","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700458","url":null,"abstract":"Recently, we have described the integration of active optical elements (multiple quantum well (MQW) modulators) together with FET-based GaAs electronicsreferred to as field-effect-transistor self-electro-optic effect device (FET-SEED) technology. [ 1 , 21 An important measure of the performance of this technology is provided by studies of ring oscillators. In addition, it provides an example of the type of novel circuits made possible by the provision of an integrated optical output. We describe here the first measurements of FET-SEED ring oscillators.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125534957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700534
R. N. Pathak, K. Goossen, J. E. Cunningham, W. Jan
Traditional bi-directional optical fiber systems utilizing two lasers, two fibers and two detectors are unattractive for fiber to the home communication applications due to the high component cost. A system for medium range applications has recently been demonstrated in which a surface normal p-i (MQW)-n modulator was successllly used to convert downstream light into upstream data fiom the subscriber terminal [l]. A requirement for these devices to be used in such a system is that they exhibit a contrast ratio on the order of 10: 1. Such contrast ratios have been achieved in devices operating at 860 nm but much lower contrast ratios have been reported for surface normal devices operating at 13001550 nm, corresponding to the low loss-low dispersion window of optical fibers, for long haul communication applications. The highest contrast ratio reported for surface normal devices in this wavelength regime to the best of our knowledge is 2.6: 1 (4.1 dB) at an applied reverse bias of 40 V for a device incorporating a 150 period InGaAs-InP MQW [2] and 3 dB for an Asymmetric Fabry Perot (ASFP) modulator albeit at a low drive voltage of 5 V [3]. The reason for the low contrast ratios is the low value of the absorption coefficient exhibited by this material system (only about 40% of that exhibited by the AIGaAs-GaAs material system). The device structure was grown on top of an n type Inp (Sn doped) wafer by Gas Source MBE using ASH3 and PH3 as the Group V source gases at a growth temperature of 500 C. The structure consisted of a 1.5 pm n-type InP clad layer (Si doped to 3 x 1018 cm-3) followed by an intrinsic region composed of 200, 10 nm &.53%.47As wells lattice matched to 8 nm InP barriers, followed by a 1 pm thick p-type InP clad layer (Be doped to 3 x lo** cm-3). Post growth processing consisted of a mesa etch and p and n type contact metallizations. An Si0 anti reflection coating was then applied to the backside of the wafer. Since the InP substrate is transparent at the wavelength of interest no substrate thinning was performed.
{"title":"InGaAs/InP P-I (MQW)-N Surface Normal Electroabsorption Modulators Exhibiting Better Than 8:1 Contrast Ratio For 1.55/spl mu/m Applications Grown By Gas Source MBE","authors":"R. N. Pathak, K. Goossen, J. E. Cunningham, W. Jan","doi":"10.1109/LEOSST.1994.700534","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700534","url":null,"abstract":"Traditional bi-directional optical fiber systems utilizing two lasers, two fibers and two detectors are unattractive for fiber to the home communication applications due to the high component cost. A system for medium range applications has recently been demonstrated in which a surface normal p-i (MQW)-n modulator was successllly used to convert downstream light into upstream data fiom the subscriber terminal [l]. A requirement for these devices to be used in such a system is that they exhibit a contrast ratio on the order of 10: 1. Such contrast ratios have been achieved in devices operating at 860 nm but much lower contrast ratios have been reported for surface normal devices operating at 13001550 nm, corresponding to the low loss-low dispersion window of optical fibers, for long haul communication applications. The highest contrast ratio reported for surface normal devices in this wavelength regime to the best of our knowledge is 2.6: 1 (4.1 dB) at an applied reverse bias of 40 V for a device incorporating a 150 period InGaAs-InP MQW [2] and 3 dB for an Asymmetric Fabry Perot (ASFP) modulator albeit at a low drive voltage of 5 V [3]. The reason for the low contrast ratios is the low value of the absorption coefficient exhibited by this material system (only about 40% of that exhibited by the AIGaAs-GaAs material system). The device structure was grown on top of an n type Inp (Sn doped) wafer by Gas Source MBE using ASH3 and PH3 as the Group V source gases at a growth temperature of 500 C. The structure consisted of a 1.5 pm n-type InP clad layer (Si doped to 3 x 1018 cm-3) followed by an intrinsic region composed of 200, 10 nm &.53%.47As wells lattice matched to 8 nm InP barriers, followed by a 1 pm thick p-type InP clad layer (Be doped to 3 x lo** cm-3). Post growth processing consisted of a mesa etch and p and n type contact metallizations. An Si0 anti reflection coating was then applied to the backside of the wafer. Since the InP substrate is transparent at the wavelength of interest no substrate thinning was performed.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130363240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700460
R. D. Snyder, F. Beyette, S. Feld, K. Geib, L. J. Irakliotis, P. Mitkas, C. Wilmsen
{"title":"Phototramistor/surface Emitfing Laser-smart Pixel Array Implementation Of An Optoelectronic Data Filter","authors":"R. D. Snyder, F. Beyette, S. Feld, K. Geib, L. J. Irakliotis, P. Mitkas, C. Wilmsen","doi":"10.1109/LEOSST.1994.700460","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700460","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127389013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700495
G. Lalk, S. Habiby, R. Vodhanel, K. Bala, P. Bonenfant
Wavelength Division Multiplexing (WDM) techrlology is being considered for emerging telecommunications and data networks, with the first likely deployment in interoffice applications. WDM allows several overlay networks on one physical network, and offers the ability to increase the network capacity and flexibility without additional investment in fiber optic infrastnrcture. Advances such as optical amplifiers and WDM crossconnects enable network implementations in a scalable and modular manner. Although WDM may offer advantages from a physical transmission and switching perspective, it becomes increasingly clear that methods for operations and management of WDM networks need to be defined. The fact that WDM networks can support a large variety of signal formats transparently through network nodes poses serious concerns about the ability to manage, controt and operate these networks. Timely commercialization of WDM networks requires a criiical assessment of how new WDM technologies and architectures might affect network operations and how network operations might influence the design of the WDM components.
{"title":"Network Operations And Wavelength Division Multiplexing","authors":"G. Lalk, S. Habiby, R. Vodhanel, K. Bala, P. Bonenfant","doi":"10.1109/LEOSST.1994.700495","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700495","url":null,"abstract":"Wavelength Division Multiplexing (WDM) techrlology is being considered for emerging telecommunications and data networks, with the first likely deployment in interoffice applications. WDM allows several overlay networks on one physical network, and offers the ability to increase the network capacity and flexibility without additional investment in fiber optic infrastnrcture. Advances such as optical amplifiers and WDM crossconnects enable network implementations in a scalable and modular manner. Although WDM may offer advantages from a physical transmission and switching perspective, it becomes increasingly clear that methods for operations and management of WDM networks need to be defined. The fact that WDM networks can support a large variety of signal formats transparently through network nodes poses serious concerns about the ability to manage, controt and operate these networks. Timely commercialization of WDM networks requires a criiical assessment of how new WDM technologies and architectures might affect network operations and how network operations might influence the design of the WDM components.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127687917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700459
L. Coldren, B. Thibeault, J. Scott
Recent work with intra-cavity contacted vertical-cavity lasers on semi-insulating substrates has resulted in very efficient, high speed arrays of devices that are compatible with integration with electronic circuits. This and other related work will be reviewed. Due to inherent geometrical advantages, vertical-cavity surface-emitting lasers (VCSELs) are attractive candidates for smart pixel schemes which require 1-D or 2-D arrays that emit light normal to the chip surface. Recent improvements in these devices have resulted in temperature insensitive operation [I], drive voltages e 3 Volts [2-41, wall-plug efficiencies as high as 17.3% [2], and lateral side-mode supression as high as 2.6 mW [5]. This surge in performance now makes hybrid or monolithic integration of arrays of VCSELs with electronic circuits a desirable pursuit. To realize the full integration capability of VCSELs, we have recently made devices with intra-cavity contacts on semi-insulating substrates to reduce parasitic capacitances, electrically isolate devices, and provide both contacts on the top surface. [6, 71 This improvement pushes the high-speed performance limit to the intrinsic bandwidth limitation of the laser active region, eliminates electrical crosstalk, allows for more driver circuit configurations, facilitates high speed packaging and hybrid integration, and allows for wafer level microwave probing. Figure 1 shows a schematic picture of the two types of devices fabricated. Device A uses a single n-type intra-cavity contact and low-barrier (Al0.67Gao.33AslGaAs) p-type top distributed Bragg reflector DBR, while device B uses two intra-cavity contacts to inject the current. Both devices have unintentionally doped bottom DBRs and use current spreading layers in the intracavity contact regions to reduce the effects of current crowding. The D.C. performance of both devices compares well with the best reported VCSEL results. Wall-plug efficiencies for both devices are shown in Fig. 2. In both cases, the small devices (7 pm for device B and 6 pm for device A) have their peak efficiencies near 1mW of output power with currents less than 4 mA and input powers less than 12 mW. This type of operation is good for high density arrays, where high efficiency at low power consumption levels is needed. The larger devices have higher wallplug efficiencies at higher input powers, but are capable of producing more than 3mW of power. This larger size is good for applications requiring lower densities, but higher fan-outs. High-speed measurements on arrays of device B have also recently been made. Figure 3 shows an SEM picture of a high-speed array with on-chip microwave lines and Fig. 4 shows the 3dB bandwidth versus bias level for the various diameter devices. The 7 pm laser achieves a thermally limited 8.5 GHz of modulation at a bias of only 4 mA with a modulation efficiency of 5.7GHz/z/mA ( higher than any in-plane laser reported). All sizes are capable of more than 5 GHz maximum modu
{"title":"Integrable, High-efficiency Vertical-cavity Laser Arrays For Smart Pixels","authors":"L. Coldren, B. Thibeault, J. Scott","doi":"10.1109/LEOSST.1994.700459","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700459","url":null,"abstract":"Recent work with intra-cavity contacted vertical-cavity lasers on semi-insulating substrates has resulted in very efficient, high speed arrays of devices that are compatible with integration with electronic circuits. This and other related work will be reviewed. Due to inherent geometrical advantages, vertical-cavity surface-emitting lasers (VCSELs) are attractive candidates for smart pixel schemes which require 1-D or 2-D arrays that emit light normal to the chip surface. Recent improvements in these devices have resulted in temperature insensitive operation [I], drive voltages e 3 Volts [2-41, wall-plug efficiencies as high as 17.3% [2], and lateral side-mode supression as high as 2.6 mW [5]. This surge in performance now makes hybrid or monolithic integration of arrays of VCSELs with electronic circuits a desirable pursuit. To realize the full integration capability of VCSELs, we have recently made devices with intra-cavity contacts on semi-insulating substrates to reduce parasitic capacitances, electrically isolate devices, and provide both contacts on the top surface. [6, 71 This improvement pushes the high-speed performance limit to the intrinsic bandwidth limitation of the laser active region, eliminates electrical crosstalk, allows for more driver circuit configurations, facilitates high speed packaging and hybrid integration, and allows for wafer level microwave probing. Figure 1 shows a schematic picture of the two types of devices fabricated. Device A uses a single n-type intra-cavity contact and low-barrier (Al0.67Gao.33AslGaAs) p-type top distributed Bragg reflector DBR, while device B uses two intra-cavity contacts to inject the current. Both devices have unintentionally doped bottom DBRs and use current spreading layers in the intracavity contact regions to reduce the effects of current crowding. The D.C. performance of both devices compares well with the best reported VCSEL results. Wall-plug efficiencies for both devices are shown in Fig. 2. In both cases, the small devices (7 pm for device B and 6 pm for device A) have their peak efficiencies near 1mW of output power with currents less than 4 mA and input powers less than 12 mW. This type of operation is good for high density arrays, where high efficiency at low power consumption levels is needed. The larger devices have higher wallplug efficiencies at higher input powers, but are capable of producing more than 3mW of power. This larger size is good for applications requiring lower densities, but higher fan-outs. High-speed measurements on arrays of device B have also recently been made. Figure 3 shows an SEM picture of a high-speed array with on-chip microwave lines and Fig. 4 shows the 3dB bandwidth versus bias level for the various diameter devices. The 7 pm laser achieves a thermally limited 8.5 GHz of modulation at a bias of only 4 mA with a modulation efficiency of 5.7GHz/z/mA ( higher than any in-plane laser reported). All sizes are capable of more than 5 GHz maximum modu","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123006742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700466
D. Liepold, U. Kehrli, K. Thelen, M. Rossi, J. Epler, H. P. Schweizer, P. Seitz, B. D. Patterson
{"title":"Optoelectronic Smart Pixels Monallithically Integrated","authors":"D. Liepold, U. Kehrli, K. Thelen, M. Rossi, J. Epler, H. P. Schweizer, P. Seitz, B. D. Patterson","doi":"10.1109/LEOSST.1994.700466","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700466","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130767658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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