Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700530
R. Dupuis, M.R. Islam, R.V. Chelakara, J. Neff, K.G. Fertitta, A. Holmes, P. Grudowski, F.J. Ciuba
We report the growth, characterization, and laser operation of high-quality InMP-InGaP and InA1GaP-InGaP short-period superlattice quantum-well (QW) heterostructures on GaAs substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). The InGaP QW heterostructures have exhibited continuous-wave (CW) room-temperature (300K) laser operation at wavelengths as short as h-586 nm (Ehv -2.1 1 eV). This is the shortest room-temperature CW laser operation reported to date for any Ill-V material system.
{"title":"Short-period Superlattice InAiP-InGaP Quantum-well Heterostructures","authors":"R. Dupuis, M.R. Islam, R.V. Chelakara, J. Neff, K.G. Fertitta, A. Holmes, P. Grudowski, F.J. Ciuba","doi":"10.1109/LEOSST.1994.700530","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700530","url":null,"abstract":"We report the growth, characterization, and laser operation of high-quality InMP-InGaP and InA1GaP-InGaP short-period superlattice quantum-well (QW) heterostructures on GaAs substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). The InGaP QW heterostructures have exhibited continuous-wave (CW) room-temperature (300K) laser operation at wavelengths as short as h-586 nm (Ehv -2.1 1 eV). This is the shortest room-temperature CW laser operation reported to date for any Ill-V material system.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133607905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700465
C. Camperi-Ginestet, B. Buchanan, Yiqin Wang, N. Jokerst, M. Brooke, M. Allen
A smart pixel imaging array of GaAs-based thin film photodetectors has been integrated in three dimensions directly on top of silicon neuromorphic oscillator circuits. Photomicrographs of the integrated assembly and test results are presented.
{"title":"Three Dimensional Smart Pixel Integration Of A GaAs-based Detector Array Directly On Top Of Silicon Circuits","authors":"C. Camperi-Ginestet, B. Buchanan, Yiqin Wang, N. Jokerst, M. Brooke, M. Allen","doi":"10.1109/LEOSST.1994.700465","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700465","url":null,"abstract":"A smart pixel imaging array of GaAs-based thin film photodetectors has been integrated in three dimensions directly on top of silicon neuromorphic oscillator circuits. Photomicrographs of the integrated assembly and test results are presented.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115846912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700511
M. Cerisola, I. Chlamtac, A. Furnagalli, R. Hofmeister, L. Kazovsky, C.L. Lu, P. Melman, P. Poggiolini
Stanford University, GTE Laboratories, and the University of Massachusetts at Amherst are members of an ARPA consortium that is experimentally investigating a method for optical contention resolution utilizing optical switches and delay lines. Our CORD* testbed is a two-node, WDM, all-optical, packet switched network with a passive star topology. Each node transmits: (a) 2.488 Gbps payload data at baseband; (b) 16 bit headers at 80 Mbps on a subcarrier frequency, multiplexed on a unique wavelength; and (c) a 2.488 GHz clock pilot tone. Payload data is transmitted in fixed length, ATM-compatible packets (53 bytes) and the headers contain the destination node address. Both the payload data and header are transmitted in a 250 ns slot. Slots are synchronized among all nodes; this is obtained using a conventional PLL to lock onto a reference signal (called PING) generated by a master node. This method is scalable to an arbitrary number of nodes. Our signaling technique is a special case of multiple subcarrier signaling (MSS), which has been proposed as a means to control a WDM network [ I ] , [2]. In our implementation, each node contains one header detector and one payload data receiver. Nodes transmit their headers at a subcarrier frequency unique to the transmitting node, allowing a single photodetector at the header detector to simultaneously receive headers from all nodes. When a header with the receiving node's destination address arrives, the corresponding wavelength is selected for the payload data receiver. Optical switches and delay lines allow data packet contentions to be resolved in the optical domain at the receiver [3]. The short packet slot size (250 ns) and high data rate (2.488 Gbps) require ultra-fast clock recovery at the payload data receiver. We have solved this problem by explicitly transmitting the payload data clock tone (2.488 GHz). The clock tone, baseband data, and header subcarrier are all combined in the microwave domain before being transmitted over a single optical carrier so that only one laser is required per node. Similarly to the payload data receiver, the header detector must recover the header clock within a few bits. Conventional PLL techniques are not nearly fast enough, requiring 10,000 to 100,000 bits I:O complete clock acquisition. Serial over-sampling techniques are also impractical because the recoveiy logic circuits would have to run at extremely high speeds, at least 320 MHz for the 80 Mbps header channel bit rate. We have developed a novel technique, Delay-line Phase Alignment (DPA), to reliably recover the header channel bit stream with digital circuitry niiming at the bit rate, 80 MHz. With DPA, a multi-tap delay line and selector are used to align the received bit stream with the local clock as shown in Figure 1. A preamble is transmitted at the beginning of each header. The DPA module monitors the bit transitions during the preamble and determines the optimum sampling tap to be used for the header bi
{"title":"Ultra-fast Clock Recovery And Subcarrier-based Signaling Technique For Optical Packet Switched Networks","authors":"M. Cerisola, I. Chlamtac, A. Furnagalli, R. Hofmeister, L. Kazovsky, C.L. Lu, P. Melman, P. Poggiolini","doi":"10.1109/LEOSST.1994.700511","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700511","url":null,"abstract":"Stanford University, GTE Laboratories, and the University of Massachusetts at Amherst are members of an ARPA consortium that is experimentally investigating a method for optical contention resolution utilizing optical switches and delay lines. Our CORD* testbed is a two-node, WDM, all-optical, packet switched network with a passive star topology. Each node transmits: (a) 2.488 Gbps payload data at baseband; (b) 16 bit headers at 80 Mbps on a subcarrier frequency, multiplexed on a unique wavelength; and (c) a 2.488 GHz clock pilot tone. Payload data is transmitted in fixed length, ATM-compatible packets (53 bytes) and the headers contain the destination node address. Both the payload data and header are transmitted in a 250 ns slot. Slots are synchronized among all nodes; this is obtained using a conventional PLL to lock onto a reference signal (called PING) generated by a master node. This method is scalable to an arbitrary number of nodes. Our signaling technique is a special case of multiple subcarrier signaling (MSS), which has been proposed as a means to control a WDM network [ I ] , [2]. In our implementation, each node contains one header detector and one payload data receiver. Nodes transmit their headers at a subcarrier frequency unique to the transmitting node, allowing a single photodetector at the header detector to simultaneously receive headers from all nodes. When a header with the receiving node's destination address arrives, the corresponding wavelength is selected for the payload data receiver. Optical switches and delay lines allow data packet contentions to be resolved in the optical domain at the receiver [3]. The short packet slot size (250 ns) and high data rate (2.488 Gbps) require ultra-fast clock recovery at the payload data receiver. We have solved this problem by explicitly transmitting the payload data clock tone (2.488 GHz). The clock tone, baseband data, and header subcarrier are all combined in the microwave domain before being transmitted over a single optical carrier so that only one laser is required per node. Similarly to the payload data receiver, the header detector must recover the header clock within a few bits. Conventional PLL techniques are not nearly fast enough, requiring 10,000 to 100,000 bits I:O complete clock acquisition. Serial over-sampling techniques are also impractical because the recoveiy logic circuits would have to run at extremely high speeds, at least 320 MHz for the 80 Mbps header channel bit rate. We have developed a novel technique, Delay-line Phase Alignment (DPA), to reliably recover the header channel bit stream with digital circuitry niiming at the bit rate, 80 MHz. With DPA, a multi-tap delay line and selector are used to align the received bit stream with the local clock as shown in Figure 1. A preamble is transmitted at the beginning of each header. The DPA module monitors the bit transitions during the preamble and determines the optimum sampling tap to be used for the header bi","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"96 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114302133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700521
C. Ih, R. Tian, X. Xia
great interest in effecting an all-optical network, particularly WAN, to overcome the electronic bottleneck. The currently widely accepted approach is to employ automatic wavelength Full connectivity and network scalability can be accomplished by employing wavelength reuse and Thus the operation of these systems requires a protocol that can pre-coordinate the routing and wavelength translations and also can handle collisions. In addition, means to achieve efficient broadcasting, multi-casting and packet switching need to be developed. A parallel approach is to use wavelength switching which so far has received much less attention. The fruitful operation of the wavelength switching system requires the use of fully tunable transmitters and/or receivers which are now technically sufficient mature. The wavelength switching system can be very attractive even for WAN, if a large number of wavelengths is available and can be multiplexed and de-multiplexed quickly. We have recently demonstrated a high density multiplexing technique which incorporates closely spaced multiple optical carriers within each division of a high density WDM system. An effective channel density of 10 channels/nm can be The high density optical carriers can be quickly de-multiplexed by optical (AOTF) and microwave By using accurate reference beamsi4], all the high density optical carriers can be generated and detected independently. This high density multiplexing system would permit us to use as many as 250 independent channels (250 Gb/s) within the optical amplifier’s bandwidth. The large number of parallel channels offers an opportunity to build general all-optical networks (such as WAN) with high capacity and a great flexibility. For instance, we can use traditional star or linear bus to build a LAN. Many LAN’s can be interconnected to form MAN’s. Interconnecting many MAN’s will result in a large WAN which could encompass the entire continental U. S. A large portion of the wavelengths is effectively reused at different levels within the network. Let’s assume that the network is organized into five levels and that the 250 wavelengths are also divided, for simplicity, into 5 equal groups. Each level uses only the pre-designated 50 wavelengths (50 Gb/s) and is connected to the next level through a Gate. The Gate regulates and isolates the wavelengths between different levels. Higher-level bypass sections may be added in parallel with the main trunk (not shown in Fig. 1) to relieve regional traffic and also to provide network self-healing. It can be shown that 100 million computers can be interconnected simultaneously! The topology of this multi-level system is symbolically shown in Fig. 1. Like the wavelength routing system, pre-coordination or reservation is, actually more, important for the wavelength switching system. Since not only the transmitters need to pick a wavelength, but also the receivers need to be informed. The demonstrated high density WDM system conveniently provi
{"title":"System And Protocol Considerations For A High Density Wavelength Switched All-optical Network","authors":"C. Ih, R. Tian, X. Xia","doi":"10.1109/LEOSST.1994.700521","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700521","url":null,"abstract":"great interest in effecting an all-optical network, particularly WAN, to overcome the electronic bottleneck. The currently widely accepted approach is to employ automatic wavelength Full connectivity and network scalability can be accomplished by employing wavelength reuse and Thus the operation of these systems requires a protocol that can pre-coordinate the routing and wavelength translations and also can handle collisions. In addition, means to achieve efficient broadcasting, multi-casting and packet switching need to be developed. A parallel approach is to use wavelength switching which so far has received much less attention. The fruitful operation of the wavelength switching system requires the use of fully tunable transmitters and/or receivers which are now technically sufficient mature. The wavelength switching system can be very attractive even for WAN, if a large number of wavelengths is available and can be multiplexed and de-multiplexed quickly. We have recently demonstrated a high density multiplexing technique which incorporates closely spaced multiple optical carriers within each division of a high density WDM system. An effective channel density of 10 channels/nm can be The high density optical carriers can be quickly de-multiplexed by optical (AOTF) and microwave By using accurate reference beamsi4], all the high density optical carriers can be generated and detected independently. This high density multiplexing system would permit us to use as many as 250 independent channels (250 Gb/s) within the optical amplifier’s bandwidth. The large number of parallel channels offers an opportunity to build general all-optical networks (such as WAN) with high capacity and a great flexibility. For instance, we can use traditional star or linear bus to build a LAN. Many LAN’s can be interconnected to form MAN’s. Interconnecting many MAN’s will result in a large WAN which could encompass the entire continental U. S. A large portion of the wavelengths is effectively reused at different levels within the network. Let’s assume that the network is organized into five levels and that the 250 wavelengths are also divided, for simplicity, into 5 equal groups. Each level uses only the pre-designated 50 wavelengths (50 Gb/s) and is connected to the next level through a Gate. The Gate regulates and isolates the wavelengths between different levels. Higher-level bypass sections may be added in parallel with the main trunk (not shown in Fig. 1) to relieve regional traffic and also to provide network self-healing. It can be shown that 100 million computers can be interconnected simultaneously! The topology of this multi-level system is symbolically shown in Fig. 1. Like the wavelength routing system, pre-coordination or reservation is, actually more, important for the wavelength switching system. Since not only the transmitters need to pick a wavelength, but also the receivers need to be informed. The demonstrated high density WDM system conveniently provi","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114596984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700541
J. Blondelle, I. Moerman, P. D. De Dobbelaere, P. van Daele, P. Demeester
The fabrication of integrated optic devices in semiconductor materials requires advanced processing techniques. In this paper, we propose the shadow masked growth (SMG) as an alternative to other techniques such as multi-step etching, mass transport, selective growth, shadow masked etching, etc. Two applications will be described: refractive lenses and tapered structures. The lenses can easily be integrated with LEDs or vertical cavity substrate-emitting laser diodes, or can be used for the realisation of 3-D microcavities. The tapered structures find interesting applications in optical mode shape transformers (e.g. for improved waveguide fibre coupling) and in bandgap engineering (when using quantum wells).
{"title":"Advanced Structures For Integrated Optics Realized With Shadow Masked Growth","authors":"J. Blondelle, I. Moerman, P. D. De Dobbelaere, P. van Daele, P. Demeester","doi":"10.1109/LEOSST.1994.700541","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700541","url":null,"abstract":"The fabrication of integrated optic devices in semiconductor materials requires advanced processing techniques. In this paper, we propose the shadow masked growth (SMG) as an alternative to other techniques such as multi-step etching, mass transport, selective growth, shadow masked etching, etc. Two applications will be described: refractive lenses and tapered structures. The lenses can easily be integrated with LEDs or vertical cavity substrate-emitting laser diodes, or can be used for the realisation of 3-D microcavities. The tapered structures find interesting applications in optical mode shape transformers (e.g. for improved waveguide fibre coupling) and in bandgap engineering (when using quantum wells).","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126093735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700435
T. Kitagawa
Recent progress in optical communication systems has emphasized the importance of integrated optical circuits such as light sources, amplifiers, and multi/demultiplexers. Active integrated optical circuits which use optical amplification have been made mainly with semiconductor waveguides. Recently, optical amplification was achieved in E?'-doped glass planar waveguides [1,2] which initiated the study of active integrated optical circuits [3]. The integration of Ef"doped waveguides with silica-based planar lightwave circuits (PLCs) [4] opens up the possibility of creating a new family of active integrated circuits. In this talk, the technology of E?+-doped silica-based PLCs is presented. First, fabrication techniques and amplification characteristics of E?'-doped waveguides are discussed. Then, their preliminary applications to active PLCs are described. A key element in obtaining a high gain in short waveguides is uniform doping at high E?' concentrations. Quenching in E?' systems caused from upconversion [5] and the upconversion is accelerated in clusters because the upconversion energy transfer rate is in proportion to r (r: distance between neighboring ions). Therefore, we need to use host glass materials with high solubilities of E?' ions in order to obtain efficient amplification in planar waveguides. Since the solubility of rare earth ions in silica is low, codoping using phosphorus or aluminum is necessary to increase the E?' concentrations to a sufficient level of about 0.5 wt% in silica-based waveguides [6]. We have developed a technique for fabricating low-loss E?-doped silica-based waveguides made by flame hydrolysis deposition and reactive ion etching using phosphorus as a codopant [2]. A gain of 0.7 dB/cm is obtained at a wavelength of 1534 nm in waveguides with an E?' concentration of 0.5 wt%. Based on a design calculated using the amplifier theory including the upconversion [7], we demonstrated a 24 dB-gain planar waveguide amplifier with a noise figure of 3.8 dB using the 0.5 wt% Er3+-doped 35 cm-long waveguide and 980 nm laser diode pump sources [8]. Active PLCs, including optical sources, amplifiers and filters, have been demonstrated by integrating E?'-doped waveguides with various waveguide circuit elements. As integrated light sources, waveguide lasers with different cavity configurations have been reported. E?'-doped Y-branched waveguide lasers, which use an interferometric effect in the multiple cavity in order to control oscillation modes [9], were demonstrated. Wavelengthtunable oscillation in the 1.5 pm telecommunication window was obtained by applying electric power to a thermo-optic phase shifter integrated in a branch of the waveguide [lo]. An E3'doped ring laser equipped with a directional coupler generated output light with narrow linewidth of 200 kHz in a 9 cm-long ring cavity [ 1 11. More recently, single-longitudinal-mode oscillation was achieved in E?'-doped waveguide lasers with integrated Bragg reflectors [12
{"title":"Er/sup 3+/-doped Silica-based Planar Lightwave Circuits","authors":"T. Kitagawa","doi":"10.1109/LEOSST.1994.700435","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700435","url":null,"abstract":"Recent progress in optical communication systems has emphasized the importance of integrated optical circuits such as light sources, amplifiers, and multi/demultiplexers. Active integrated optical circuits which use optical amplification have been made mainly with semiconductor waveguides. Recently, optical amplification was achieved in E?'-doped glass planar waveguides [1,2] which initiated the study of active integrated optical circuits [3]. The integration of Ef\"doped waveguides with silica-based planar lightwave circuits (PLCs) [4] opens up the possibility of creating a new family of active integrated circuits. In this talk, the technology of E?+-doped silica-based PLCs is presented. First, fabrication techniques and amplification characteristics of E?'-doped waveguides are discussed. Then, their preliminary applications to active PLCs are described. A key element in obtaining a high gain in short waveguides is uniform doping at high E?' concentrations. Quenching in E?' systems caused from upconversion [5] and the upconversion is accelerated in clusters because the upconversion energy transfer rate is in proportion to r (r: distance between neighboring ions). Therefore, we need to use host glass materials with high solubilities of E?' ions in order to obtain efficient amplification in planar waveguides. Since the solubility of rare earth ions in silica is low, codoping using phosphorus or aluminum is necessary to increase the E?' concentrations to a sufficient level of about 0.5 wt% in silica-based waveguides [6]. We have developed a technique for fabricating low-loss E?-doped silica-based waveguides made by flame hydrolysis deposition and reactive ion etching using phosphorus as a codopant [2]. A gain of 0.7 dB/cm is obtained at a wavelength of 1534 nm in waveguides with an E?' concentration of 0.5 wt%. Based on a design calculated using the amplifier theory including the upconversion [7], we demonstrated a 24 dB-gain planar waveguide amplifier with a noise figure of 3.8 dB using the 0.5 wt% Er3+-doped 35 cm-long waveguide and 980 nm laser diode pump sources [8]. Active PLCs, including optical sources, amplifiers and filters, have been demonstrated by integrating E?'-doped waveguides with various waveguide circuit elements. As integrated light sources, waveguide lasers with different cavity configurations have been reported. E?'-doped Y-branched waveguide lasers, which use an interferometric effect in the multiple cavity in order to control oscillation modes [9], were demonstrated. Wavelengthtunable oscillation in the 1.5 pm telecommunication window was obtained by applying electric power to a thermo-optic phase shifter integrated in a branch of the waveguide [lo]. An E3'doped ring laser equipped with a directional coupler generated output light with narrow linewidth of 200 kHz in a 9 cm-long ring cavity [ 1 11. More recently, single-longitudinal-mode oscillation was achieved in E?'-doped waveguide lasers with integrated Bragg reflectors [12","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126834887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700472
F. Beyette, P. Mitkas, S. Feld, C. Wilmsen
{"title":"Optoelectronic Bitwise Compare-and-exchange Modules Based An A Silicon / Vertical Cavity laser Hybrid","authors":"F. Beyette, P. Mitkas, S. Feld, C. Wilmsen","doi":"10.1109/LEOSST.1994.700472","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700472","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121596249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700537
N. Inoue
{"title":"Kinetics Of Islands And Monolayer Steps In Molecular Beam Epitaxy Revealed By In -situ Scanning Electron Microscopy","authors":"N. Inoue","doi":"10.1109/LEOSST.1994.700537","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700537","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131542556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700470
I. Underwood, D.G. Vas, M. Snook, W. Hossack, L.B. Chua, J. Brocklehurst, M. Birch, W. Crossland, R. Mears, T. Yu, M. Worboys, S. Radcliffe, N. Collings
We present preliminary characterisation of three smart plxei designs which Illustrate the application of femlectr lc l l lquld~~bver-s i l lcn technology to aystem specttlc mart plxel arrays. INTRODUCTION The hybrid Spatial Light Modulator (SLM) technology of Ferroelectric Liquid Crystal over Very Large Scale Integrated (FLCNLSI) silicon lends itself readily to the implementation of smart pixelst11. Within the UK, under the Smart and Advanced Spatial Light Modulators (SASLM) programme, we have designed prototype smart pixel arrays in FLCNLSI technology. Here, we report on three particular pixel arrays designed respectively for use in optical computing, optical image processing and optoelectronic neural networks. THE CELLULAR LoQlC PIXEL FOR OPTICAL COllllPUTlNG The pixelated optical logic plane allows the application of a superset of the normal set of Boolean logic functions to be applied simoultaneously to a bit plane of optical data. Vass[*l describes a pixel which can be programmed, by means of a set of global electrical signals, to implement any one of these logic functions; it includes connections in 2-D to eight nearest neighbours. We have designed a prototype pixel with part of this functionality and connections in l -D to two nearest neighbours. The pixel schematic is shown in Figure 1. An array of pixels has been fabricated on a test I.C. The fabrication process was 5p.m CMOS; the pixel size is 400 X 800 Fm? We describe the results of succesful testing of the pixel functionality and look at the implications for the fullf uctionality pixel. THE ISOPHOTE PIXEL FOR IMAQE PROCESSING The isophote pixel implements a variable threshold window edge enhancement functionP1. The circuit is shown in Figure 2. Two bias voltages available to all pixels determine the intensity level at which thresholding occurs. In order to determine whether a pixel lies on an edge it then computes the logic function equivalnet, POUT, to drive the FLC layer, where (The inclusion of the PlNterm ensures only one line of pixels is activated along an edge.) A 64x64 pixel array has been fabricated in 1.2pm CMOS technology. The pixel POUT = (( N @ S) + (E @ W) + (NW @ SE) + (NE @ SW)) Pi,
我们提出了三种智能plxei设计的初步特征，说明了在系统光谱智能plxei阵列中应用分子lc - l - l - l -s - l - l技术。基于超大规模集成电路(FLCNLSI)硅的铁电液晶混合空间光调制器(SLM)技术使其易于实现智能像素11。在英国，根据智能和先进空间光调制器(SASLM)计划，我们在FLCNLSI技术中设计了原型智能像素阵列。在这里，我们报告了三种特殊的像素阵列，分别设计用于光学计算，光学图像处理和光电子神经网络。像素化的光学逻辑平面允许将布尔逻辑函数的正规集的超集同时应用于光学数据的位平面。Vass[*l]描述了一个像素，它可以通过一组全局电信号来编程，以实现这些逻辑功能中的任何一个;它包括与八个最近邻居的二维连接。我们设计了一个原型像素，具有部分功能，并在l -D中连接到两个最近的邻居。像素示意图如图1所示。在一台测试芯片上制备了一组像素阵列，制备工艺为5p。m CMOS;像素大小是400x800fm ?我们描述了像素功能成功测试的结果，并研究了完整功能像素的含义。图像处理的等影点像素实现了一个可变阈值窗口边缘增强函数p1。电路如图2所示。所有像素可用的两个偏置电压决定阈值发生的强度水平。为了确定像素是否位于边缘上，它然后计算逻辑功能等效，POUT，以驱动FLC层，其中(包含PlNterm确保沿边缘只有一行像素被激活)。采用1.2pm CMOS技术制备了64x64像素阵列。像素点POUT = ((N @ S) + (E @ W) + (NW @ SE) + (NE @ SW)) Pi，
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