Evi Keramida, George Souliotis, Spyridon Vlassis, Fotis Plessas
This paper presents a novel inductorless dual-mode buck-boost charge pump (CP) based DC-DC converter. The proposed architecture allows the same circuit to accomplish two modes of operation, buck and boost, for degrading or elevating the output voltage, respectively, compared to the input. To achieve each mode, only a switching of the input–output connections is needed without any other modification in the design of the DC-DC converter. The dual-mode configuration aims to merge two different functions into one circuit, minimizing the design time and the area the DC-DC converter occupies on the die. The proposed buck-boost CP has been designed using TSMC 65 nm complementary metal–oxide–semiconductor (CMOS) technology. The functional input voltage range of the CP in boost mode is 1.2 V to 1.8 V and the typical output voltage is 1.8 V. For the buck mode, the input voltage range is 3.2 V to 3.6 V and the output is 1.5 V. For both modes, the output can be easily modified to new values by changing the comparator configuration. Efficiency results are also provided for the two modes.
提出了一种新型无电感双模buck-boost电荷泵(CP)的DC-DC变换器。所提出的架构允许同一电路实现降压和升压两种工作模式，分别用于与输入相比降低或提高输出电压。为了实现每种模式，只需切换输入输出连接，而无需在DC-DC转换器的设计中进行任何其他修改。双模配置旨在将两种不同的功能合并到一个电路中，从而最大限度地减少设计时间和DC-DC转换器在芯片上占用的面积。采用台积电65nm互补金属氧化物半导体(CMOS)技术设计了buck-boost CP。升压模式下，CP的功能输入电压范围为1.2 V ~ 1.8 V，典型输出电压为1.8 V。降压模式的输入电压范围为3.2 V ~ 3.6 V，输出电压范围为1.5 V。对于这两种模式，可以通过更改比较器配置轻松地将输出修改为新值。给出了两种模式的效率结果。
{"title":"Buck-Boost Charge Pump Based DC-DC Converter","authors":"Evi Keramida, George Souliotis, Spyridon Vlassis, Fotis Plessas","doi":"10.3390/jlpea13020027","DOIUrl":"https://doi.org/10.3390/jlpea13020027","url":null,"abstract":"This paper presents a novel inductorless dual-mode buck-boost charge pump (CP) based DC-DC converter. The proposed architecture allows the same circuit to accomplish two modes of operation, buck and boost, for degrading or elevating the output voltage, respectively, compared to the input. To achieve each mode, only a switching of the input–output connections is needed without any other modification in the design of the DC-DC converter. The dual-mode configuration aims to merge two different functions into one circuit, minimizing the design time and the area the DC-DC converter occupies on the die. The proposed buck-boost CP has been designed using TSMC 65 nm complementary metal–oxide–semiconductor (CMOS) technology. The functional input voltage range of the CP in boost mode is 1.2 V to 1.8 V and the typical output voltage is 1.8 V. For the buck mode, the input voltage range is 3.2 V to 3.6 V and the output is 1.5 V. For both modes, the output can be easily modified to new values by changing the comparator configuration. Efficiency results are also provided for the two modes.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135518098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Tawalbeh, Feras Alasali, Zahra Ghanem, Mohammad Alghazzawi, Ahmad Abu-Raideh, W. Holderbaum
In considering projections that flooding will increase in the future years due to factors such as climate change and urbanization, the need for dependable and accurate water sensors systems is greater than ever. In this study, the performance of four different water level sensors, including ultrasonic, infrared (IR), and pressure sensors, is analyzed based on innovative characterization and comparative analysis, to determine whether or not these sensors have the ability to detect rising water levels and flash floods at an earlier stage under different conditions. During our exhaustive tests, we subjected the device to a variety of conditions, including clean and contaminated water, light and darkness, and an analogue connection to a display. When it came to monitoring water levels, the ultrasonic sensors stood out because of their remarkable precision and consistency. To address this issue, this study provides a novel and comparative examination of four water level sensors to determine which is the most effective and cost-effective in detecting floods and water level fluctuations. The IR sensor delivered accurate findings; however, it demonstrated some degree of variability throughout the course of the experiment. In addition, the results of our research show that the pressure sensor is a legitimate alternative to ultrasonic sensors. This presents a possibility that is more advantageous financially when it comes to the development of effective water level monitoring systems. The findings of this study are extremely helpful in improving the dependability and accuracy of flood detection systems and, eventually, in lessening the devastation caused by natural catastrophes.
{"title":"Innovative Characterization and Comparative Analysis of Water Level Sensors for Enhanced Early Detection and Warning of Floods","authors":"R. Tawalbeh, Feras Alasali, Zahra Ghanem, Mohammad Alghazzawi, Ahmad Abu-Raideh, W. Holderbaum","doi":"10.3390/jlpea13020026","DOIUrl":"https://doi.org/10.3390/jlpea13020026","url":null,"abstract":"In considering projections that flooding will increase in the future years due to factors such as climate change and urbanization, the need for dependable and accurate water sensors systems is greater than ever. In this study, the performance of four different water level sensors, including ultrasonic, infrared (IR), and pressure sensors, is analyzed based on innovative characterization and comparative analysis, to determine whether or not these sensors have the ability to detect rising water levels and flash floods at an earlier stage under different conditions. During our exhaustive tests, we subjected the device to a variety of conditions, including clean and contaminated water, light and darkness, and an analogue connection to a display. When it came to monitoring water levels, the ultrasonic sensors stood out because of their remarkable precision and consistency. To address this issue, this study provides a novel and comparative examination of four water level sensors to determine which is the most effective and cost-effective in detecting floods and water level fluctuations. The IR sensor delivered accurate findings; however, it demonstrated some degree of variability throughout the course of the experiment. In addition, the results of our research show that the pressure sensor is a legitimate alternative to ultrasonic sensors. This presents a possibility that is more advantageous financially when it comes to the development of effective water level monitoring systems. The findings of this study are extremely helpful in improving the dependability and accuracy of flood detection systems and, eventually, in lessening the devastation caused by natural catastrophes.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2023-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44190696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This is the first review of conductive electrets (unpoled carbons and metals), which provide a new avenue for low-power electronics. The electret provides low DC voltage (μV) while allowing low DC current (μA) to pass through. Ohm’s Law is obeyed. The voltage scales with the inter-electrode distance. Series connection of multiple electret components provides a series voltage that equals the sum of the voltages of the components if there is no bending at the connection between the components. Otherwise, the series voltage is below the sum. Bending within the component also diminishes the voltage because of the polarization continuity decrease. The electret originates from the interaction of a tiny fraction of the carriers with the atoms. This interaction results in the charge in the electret. Dividing the electret charge by the electret voltage V’ provides the electret-based capacitance C’, which is higher than the permittivity-based capacitance (conventional) by a large number of orders of magnitude. The C’ governs the electret energy (1/2 C’V’2) and electret discharge time constant (RC’, where R = resistance), as shown for metals. The discharge time is promoted by a larger inter-electrode distance. The electret discharges occur upon short-circuiting and charge back upon subsequent opencircuiting. The discharge or charge of the electret amounts to the discharge or charge of C’.
{"title":"First Review of Conductive Electrets for Low-Power Electronics","authors":"D. Chung","doi":"10.3390/jlpea13020025","DOIUrl":"https://doi.org/10.3390/jlpea13020025","url":null,"abstract":"This is the first review of conductive electrets (unpoled carbons and metals), which provide a new avenue for low-power electronics. The electret provides low DC voltage (μV) while allowing low DC current (μA) to pass through. Ohm’s Law is obeyed. The voltage scales with the inter-electrode distance. Series connection of multiple electret components provides a series voltage that equals the sum of the voltages of the components if there is no bending at the connection between the components. Otherwise, the series voltage is below the sum. Bending within the component also diminishes the voltage because of the polarization continuity decrease. The electret originates from the interaction of a tiny fraction of the carriers with the atoms. This interaction results in the charge in the electret. Dividing the electret charge by the electret voltage V’ provides the electret-based capacitance C’, which is higher than the permittivity-based capacitance (conventional) by a large number of orders of magnitude. The C’ governs the electret energy (1/2 C’V’2) and electret discharge time constant (RC’, where R = resistance), as shown for metals. The discharge time is promoted by a larger inter-electrode distance. The electret discharges occur upon short-circuiting and charge back upon subsequent opencircuiting. The discharge or charge of the electret amounts to the discharge or charge of C’.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2023-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41723442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work presents a two-stage operational transconductance amplifier suitable for sub-1 V operation. This characteristic is achieved thanks to the adoption of a bulk-driven non-tailed differential pair. Local positive feedback is exploited to boost the equivalent transconductance of the first stage and the quasi-floating gate approach enables the class AB operation of the second stage. Implemented in a standard 180 nm CMOS technology and supplied at 0.6 V, the amplifier exhibits a 350 kHz gain bandwidth product and a phase margin of 69° while driving a 150 pF load. Compared to other solutions in the literature, the proposed one exhibits a considerable performance improvement, especially for large signal operation.
{"title":"A 0.6 V Bulk-Driven Class-AB Two-Stage OTA with Non-Tailed Differential Pair","authors":"A. Ballo, A. D. Grasso, S. Pennisi","doi":"10.3390/jlpea13020024","DOIUrl":"https://doi.org/10.3390/jlpea13020024","url":null,"abstract":"This work presents a two-stage operational transconductance amplifier suitable for sub-1 V operation. This characteristic is achieved thanks to the adoption of a bulk-driven non-tailed differential pair. Local positive feedback is exploited to boost the equivalent transconductance of the first stage and the quasi-floating gate approach enables the class AB operation of the second stage. Implemented in a standard 180 nm CMOS technology and supplied at 0.6 V, the amplifier exhibits a 350 kHz gain bandwidth product and a phase margin of 69° while driving a 150 pF load. Compared to other solutions in the literature, the proposed one exhibits a considerable performance improvement, especially for large signal operation.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2023-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45738184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper deals with the design, analysis, and implementation of a Ka-band, single-stage, quasi-inverse class F power amplifier (PA). A detailed methodology for the evaluation of the active device’s output capacitance is described, enabling the designing of a second-harmonically tuned load and resulting in enhanced performance. A simplified model for the extraction of time-domain intrinsic voltage and current waveforms at the output of the main active core is introduced, enforcing the implementation process of the proposed quasi-inverse class F technique. The PA is fabricated in a 130 nm SiGe BiCMOS technology with fT/fmax=250/370 GHz and it is suitable for 5G applications. It achieves 33% peak power-added efficiency (PAE), 18.8 dBm saturation output power Psat, and 14.7 dB maximum large-signal power gain G at the operating frequency of 38 GHz. The PA’s response is also tested under a modulated-signal excitation and simulation results are denoted in this paper. The chip size is 0.605×0.712 mm2 including all pads.
{"title":"A Ka-Band SiGe BiCMOS Quasi-F−1 Power Amplifier Using a Parasitic Capacitance Cancellation Technique †","authors":"Vasileios Manouras, Ioannis Papananos","doi":"10.3390/jlpea13020023","DOIUrl":"https://doi.org/10.3390/jlpea13020023","url":null,"abstract":"This paper deals with the design, analysis, and implementation of a Ka-band, single-stage, quasi-inverse class F power amplifier (PA). A detailed methodology for the evaluation of the active device’s output capacitance is described, enabling the designing of a second-harmonically tuned load and resulting in enhanced performance. A simplified model for the extraction of time-domain intrinsic voltage and current waveforms at the output of the main active core is introduced, enforcing the implementation process of the proposed quasi-inverse class F technique. The PA is fabricated in a 130 nm SiGe BiCMOS technology with fT/fmax=250/370 GHz and it is suitable for 5G applications. It achieves 33% peak power-added efficiency (PAE), 18.8 dBm saturation output power Psat, and 14.7 dB maximum large-signal power gain G at the operating frequency of 38 GHz. The PA’s response is also tested under a modulated-signal excitation and simulation results are denoted in this paper. The chip size is 0.605×0.712 mm2 including all pads.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2023-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44874441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Miikka Runolinna, M. Turnquist, Jukka Teittinen, Pauliina Ilmonen, L. Koskinen
Two multi-parameter distributions, namely the Pearson type IV and metalog distributions, are discussed and suggested as alternatives to the normal distribution for modelling path delay data that determines the maximum clock frequency (FMAX) of a microprocessor or other digital circuit. These distributions outperform the normal distribution in goodness-of-fit statistics for simulated path delay data derived from a fabricated microcontroller, with the six-term metalog distribution offering the best fit. Furthermore, 99.7% confidence intervals are calculated for some extreme quantiles on each dataset using the previous distributions. Considering the six-term metalog distribution estimates as the golden standard, the relative errors in single paths vary between 4 and 14% for the normal distribution. Finally, the within-die (WID) variation maximum critical path delay distribution for multiple critical paths is derived under the assumption of independence between the paths. Its density function is then used to compute different maximum delays for varying numbers of critical paths, assuming each path has one of the previous distributions with the metalog estimates as the golden standard. For 100 paths, the relative errors are at most 14% for the normal distribution. With 1000 and 10,000 paths, the corresponding errors extend up to 16 and 19%, respectively.
{"title":"Extreme Path Delay Estimation of Critical Paths in Within-Die Process Fluctuations Using Multi-Parameter Distributions","authors":"Miikka Runolinna, M. Turnquist, Jukka Teittinen, Pauliina Ilmonen, L. Koskinen","doi":"10.3390/jlpea13010022","DOIUrl":"https://doi.org/10.3390/jlpea13010022","url":null,"abstract":"Two multi-parameter distributions, namely the Pearson type IV and metalog distributions, are discussed and suggested as alternatives to the normal distribution for modelling path delay data that determines the maximum clock frequency (FMAX) of a microprocessor or other digital circuit. These distributions outperform the normal distribution in goodness-of-fit statistics for simulated path delay data derived from a fabricated microcontroller, with the six-term metalog distribution offering the best fit. Furthermore, 99.7% confidence intervals are calculated for some extreme quantiles on each dataset using the previous distributions. Considering the six-term metalog distribution estimates as the golden standard, the relative errors in single paths vary between 4 and 14% for the normal distribution. Finally, the within-die (WID) variation maximum critical path delay distribution for multiple critical paths is derived under the assumption of independence between the paths. Its density function is then used to compute different maximum delays for varying numbers of critical paths, assuming each path has one of the previous distributions with the metalog estimates as the golden standard. For 100 paths, the relative errors are at most 14% for the normal distribution. With 1000 and 10,000 paths, the corresponding errors extend up to 16 and 19%, respectively.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2023-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47817446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Edge AI accelerators are utilized to accelerate the computation in edge AI devices such as image recognition sensors on robotics, door lockers, drones, and remote sensing satellites. Instead of using a general-purpose processor (GPP) or graphic processing unit (GPU), an edge AI accelerator brings a customized design to meet the requirements of the edge environment. The requirements include real-time processing, low-power consumption, and resource-awareness, including resources on field programmable gate array (FPGA) or limited application-specific integrated circuit (ASIC) area. The system’s reliability (e.g., permanent fault tolerance) is essential if the devices target radiation fields such as space and nuclear power stations. This paper proposes a dynamic reconfigurable column streaming-based convolution engine (DycSe) with programmable adder modules for low-power and resource-aware edge AI accelerators to meet the requirements. The proposed DycSe design does not target the FPGA platform only. Instead, it is an intellectual property (IP) core design. The FPGA platform used in this paper is for prototyping the design evaluation. This paper uses the Vivado synthesis tool to evaluate the power consumption and resource usage of DycSe. Since the synthesis tool is limited to giving the final complete system result in the designing stage, we compare DycSe to a commercial edge AI accelerator for cross-reference with other state-of-the-art works. The commercial architecture shares the competitive performance within the low-power ultra-small (LPUS) edge AI scopes. The result shows that DycSe contains 3.56% less power consumption and slight resources (1%) overhead with reconfigurable flexibility.
{"title":"DycSe: A Low-Power, Dynamic Reconfiguration Column Streaming-Based Convolution Engine for Resource-Aware Edge AI Accelerators","authors":"W. Lin, Yajun Zhu, T. Arslan","doi":"10.3390/jlpea13010021","DOIUrl":"https://doi.org/10.3390/jlpea13010021","url":null,"abstract":"Edge AI accelerators are utilized to accelerate the computation in edge AI devices such as image recognition sensors on robotics, door lockers, drones, and remote sensing satellites. Instead of using a general-purpose processor (GPP) or graphic processing unit (GPU), an edge AI accelerator brings a customized design to meet the requirements of the edge environment. The requirements include real-time processing, low-power consumption, and resource-awareness, including resources on field programmable gate array (FPGA) or limited application-specific integrated circuit (ASIC) area. The system’s reliability (e.g., permanent fault tolerance) is essential if the devices target radiation fields such as space and nuclear power stations. This paper proposes a dynamic reconfigurable column streaming-based convolution engine (DycSe) with programmable adder modules for low-power and resource-aware edge AI accelerators to meet the requirements. The proposed DycSe design does not target the FPGA platform only. Instead, it is an intellectual property (IP) core design. The FPGA platform used in this paper is for prototyping the design evaluation. This paper uses the Vivado synthesis tool to evaluate the power consumption and resource usage of DycSe. Since the synthesis tool is limited to giving the final complete system result in the designing stage, we compare DycSe to a commercial edge AI accelerator for cross-reference with other state-of-the-art works. The commercial architecture shares the competitive performance within the low-power ultra-small (LPUS) edge AI scopes. The result shows that DycSe contains 3.56% less power consumption and slight resources (1%) overhead with reconfigurable flexibility.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2023-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49310776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Noora Almarri, P. Langlois, D. Jiang, A. Demosthenous
A power management unit (PMU) is an essential block for diversified multi-functional low-power Internet of Things (IoT) and biomedical electronics. This paper includes a theoretical analysis of a high current, single-stage ac-dc, reconfigurable, dual output, regulating rectifier consisting of pulse width modulation (PWM) and pulse frequency modulation (PFM). The regulating rectifier provides two independently regulated supply voltages of 1.8 V and 3.3 V from an input ac voltage. The PFM control feedback consists of feedback-driven regulation to adjust the driving frequency of the power transistors through adaptive buffers in the active rectifier. The PWM/PFM mode control provides a feedback loop to adjust the conduction duration accurately and minimize power losses. The design also includes an adiabatic charge pump (CP) to provide a higher voltage level. The adiabatic CP consists of latch-up and power-saving topologies to enhance its power efficiency. Simulation results show that the dual regulating rectifier has 94.3% voltage conversion efficiency with an ac input magnitude of 3.5 Vp. The power conversion efficiency of the regulated 3.3 V output voltage is 82.3%. The adiabatic CP has an overall voltage conversion efficiency (VCE) of 92.9% with a total on-chip capacitance of 60 pF. The circuit was designed using 180 nm CMOS technology.
{"title":"Efficient Dual Output Regulating Rectifier and Adiabatic Charge Pump for Biomedical Applications Employing Wireless Power Transfer","authors":"Noora Almarri, P. Langlois, D. Jiang, A. Demosthenous","doi":"10.3390/jlpea13010020","DOIUrl":"https://doi.org/10.3390/jlpea13010020","url":null,"abstract":"A power management unit (PMU) is an essential block for diversified multi-functional low-power Internet of Things (IoT) and biomedical electronics. This paper includes a theoretical analysis of a high current, single-stage ac-dc, reconfigurable, dual output, regulating rectifier consisting of pulse width modulation (PWM) and pulse frequency modulation (PFM). The regulating rectifier provides two independently regulated supply voltages of 1.8 V and 3.3 V from an input ac voltage. The PFM control feedback consists of feedback-driven regulation to adjust the driving frequency of the power transistors through adaptive buffers in the active rectifier. The PWM/PFM mode control provides a feedback loop to adjust the conduction duration accurately and minimize power losses. The design also includes an adiabatic charge pump (CP) to provide a higher voltage level. The adiabatic CP consists of latch-up and power-saving topologies to enhance its power efficiency. Simulation results show that the dual regulating rectifier has 94.3% voltage conversion efficiency with an ac input magnitude of 3.5 Vp. The power conversion efficiency of the regulated 3.3 V output voltage is 82.3%. The adiabatic CP has an overall voltage conversion efficiency (VCE) of 92.9% with a total on-chip capacitance of 60 pF. The circuit was designed using 180 nm CMOS technology.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2023-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44072761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
X. Nguyen, Tony Gerges, P. Bevilacqua, J. Duchamp, P. Benech, J. Verdier, P. Lombard, Pangsui Usifu Linge, F. Mieyeville, Michel Cabrera, B. Allard
Harvesting of ambient radio-frequency energy is largely covered in the literature. The RF energy harvester is considered most of the time as a standalone board. There is an interest to add the RF harvesting function on an already-designed object. Polymer objects are considered here, manufactured through an additive process and the paper focuses on the rapid prototyping of the harvester using a plastronic approach. An array of four antennas is considered for circular polarization with high self-isolation. The RF circuit is obtained using an electroless copper metallization of the surface of a 3D substrate fabricated using stereolithography printing. The RF properties of the polymer resin are not optimal; thus, the interest of this work is to investigate the potential capabilities of such an implementation, particularly in terms of freedom of 3D design and ease of fabrication. The electromagnetic properties of the substrate are characterized over a band of 0.5–2.5 GHz applying the two-transmission-line method. A circular polarization antenna is experimented as a rapid prototyping vehicle and yields a gain of 1.26 dB. A lab-scale prototype of the rectifier and power management unit are experimented with discrete components. The cold start-up circuit accepts a minimum voltage of 180 mV. The main DC/DC converter operates under 1.4 V but is able to compensate losses for an input DC voltage as low as 100 mV (10 μW). The rectifier alone is capable of 3.5% efficiency at −30 dBm input RF power. The global system of circularly polarized antenna, rectifier, and voltage conversion features a global experimental efficiency of 14.7% at an input power of −13.5 dBm. The possible application of such results is discussed.
{"title":"Radio-Frequency Energy Harvesting Using Rapid 3D Plastronics Protoyping Approach: A Case Study","authors":"X. Nguyen, Tony Gerges, P. Bevilacqua, J. Duchamp, P. Benech, J. Verdier, P. Lombard, Pangsui Usifu Linge, F. Mieyeville, Michel Cabrera, B. Allard","doi":"10.3390/jlpea13010019","DOIUrl":"https://doi.org/10.3390/jlpea13010019","url":null,"abstract":"Harvesting of ambient radio-frequency energy is largely covered in the literature. The RF energy harvester is considered most of the time as a standalone board. There is an interest to add the RF harvesting function on an already-designed object. Polymer objects are considered here, manufactured through an additive process and the paper focuses on the rapid prototyping of the harvester using a plastronic approach. An array of four antennas is considered for circular polarization with high self-isolation. The RF circuit is obtained using an electroless copper metallization of the surface of a 3D substrate fabricated using stereolithography printing. The RF properties of the polymer resin are not optimal; thus, the interest of this work is to investigate the potential capabilities of such an implementation, particularly in terms of freedom of 3D design and ease of fabrication. The electromagnetic properties of the substrate are characterized over a band of 0.5–2.5 GHz applying the two-transmission-line method. A circular polarization antenna is experimented as a rapid prototyping vehicle and yields a gain of 1.26 dB. A lab-scale prototype of the rectifier and power management unit are experimented with discrete components. The cold start-up circuit accepts a minimum voltage of 180 mV. The main DC/DC converter operates under 1.4 V but is able to compensate losses for an input DC voltage as low as 100 mV (10 μW). The rectifier alone is capable of 3.5% efficiency at −30 dBm input RF power. The global system of circularly polarized antenna, rectifier, and voltage conversion features a global experimental efficiency of 14.7% at an input power of −13.5 dBm. The possible application of such results is discussed.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2023-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48630426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Paolino, Alessio Antolini, Francesco Zavalloni, Andrea Lico, E. Franchi Scarselli, Mauro Mangia, Alex Marchioni, Fabio Pareschi, G. Setti, R. Rovatti, Mattia Luigi Torres, M. Carissimi, M. Pasotti
Analog In-Memory computing (AIMC) is a novel paradigm looking for solutions to prevent the unnecessary transfer of data by distributing computation within memory elements. One such operation is matrix-vector multiplication (MVM), a workhorse of many fields ranging from linear regression to Deep Learning. The same concept can be readily applied to the encoding stage in Compressed Sensing (CS) systems, where an MVM operation maps input signals into compressed measurements. With a focus on an encoder built on top of a Phase-Change Memory (PCM) AIMC platform, the effects of device non-idealities, namely programming spread and drift over time, are observed in terms of the reconstruction quality obtained for synthetic signals, sparse in the Discrete Cosine Transform (DCT) domain. PCM devices are simulated using statistical models summarizing the properties experimentally observed in an AIMC prototype, designed in a 90 nm STMicroelectronics technology. Different families of decoders are tested, and tradeoffs in terms of encoding energy are analyzed. Furthermore, the benefits of a hardware drift compensation strategy are also observed, highlighting its necessity to prevent the need for a complete reprogramming of the entire analog array. The results show >30 dB average reconstruction quality for mid-range conductances and a suitably selected decoder right after programming. Additionally, the hardware drift compensation strategy enables robust performance even when different drift conditions are tested.
{"title":"Decoding Algorithms and HW Strategies to Mitigate Uncertainties in a PCM-Based Analog Encoder for Compressed Sensing","authors":"C. Paolino, Alessio Antolini, Francesco Zavalloni, Andrea Lico, E. Franchi Scarselli, Mauro Mangia, Alex Marchioni, Fabio Pareschi, G. Setti, R. Rovatti, Mattia Luigi Torres, M. Carissimi, M. Pasotti","doi":"10.3390/jlpea13010017","DOIUrl":"https://doi.org/10.3390/jlpea13010017","url":null,"abstract":"Analog In-Memory computing (AIMC) is a novel paradigm looking for solutions to prevent the unnecessary transfer of data by distributing computation within memory elements. One such operation is matrix-vector multiplication (MVM), a workhorse of many fields ranging from linear regression to Deep Learning. The same concept can be readily applied to the encoding stage in Compressed Sensing (CS) systems, where an MVM operation maps input signals into compressed measurements. With a focus on an encoder built on top of a Phase-Change Memory (PCM) AIMC platform, the effects of device non-idealities, namely programming spread and drift over time, are observed in terms of the reconstruction quality obtained for synthetic signals, sparse in the Discrete Cosine Transform (DCT) domain. PCM devices are simulated using statistical models summarizing the properties experimentally observed in an AIMC prototype, designed in a 90 nm STMicroelectronics technology. Different families of decoders are tested, and tradeoffs in terms of encoding energy are analyzed. Furthermore, the benefits of a hardware drift compensation strategy are also observed, highlighting its necessity to prevent the need for a complete reprogramming of the entire analog array. The results show >30 dB average reconstruction quality for mid-range conductances and a suitably selected decoder right after programming. Additionally, the hardware drift compensation strategy enables robust performance even when different drift conditions are tested.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2023-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41948594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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