Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601924
F. Courreges
Field Emission Displays (FEDs) are now recognized as having the potential to play a significant role in display technology towards the year 2000. While there is still a debate on the relative merits of various technology options to build the most efficient and low cost FEDs, the low voltage architecture has been the only choice allowing for the demonstration of a 10 inch VGA. The detailed design parameters associated with cathode, anode and assembly are discussed.
{"title":"Options for FED products [field emission displays]","authors":"F. Courreges","doi":"10.1109/IVMC.1996.601924","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601924","url":null,"abstract":"Field Emission Displays (FEDs) are now recognized as having the potential to play a significant role in display technology towards the year 2000. While there is still a debate on the relative merits of various technology options to build the most efficient and low cost FEDs, the low voltage architecture has been the only choice allowing for the demonstration of a 10 inch VGA. The detailed design parameters associated with cathode, anode and assembly are discussed.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134130498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601797
P. Troyan, V. M. Gaponenko, S. Ghyngazov, S.S. Kramor
Arrays of formed MIM emitters are presently being investigated for use in flat panel displays. This work describes the procedures through which such characteristics of MIM emitter arrays as emission current density and emission uniformity can be improved. Results on measuring a lifetime of a display prototype are also presented.
{"title":"Methods for increasing emission current density and improving emission uniformity of formed MIM emitter arrays","authors":"P. Troyan, V. M. Gaponenko, S. Ghyngazov, S.S. Kramor","doi":"10.1109/IVMC.1996.601797","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601797","url":null,"abstract":"Arrays of formed MIM emitters are presently being investigated for use in flat panel displays. This work describes the procedures through which such characteristics of MIM emitter arrays as emission current density and emission uniformity can be improved. Results on measuring a lifetime of a display prototype are also presented.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133276846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601884
J. Shaw, H. Gray
A primary failure and degradation mechanism in FEAs is arc damage. Our measurements show that arc damage is reduced by placing resistance in series with FEAs, but appears to remain the dominant failure mechanism. Once ignited, an arc can potentially dissipate most of the energy stored in the charged capacitance of the FEA, regardless of how well protected the FEA is. Simple calculations show that the energy stored in a state-of-the-art low capacitance FEA is more than enough to melt sufficient material to ruin a tip or form a short between a tip and the gate. In order to produce more uniform emission for display applications, resistances are typically incorporated into the array in series with each tip. Arc damage has been suppressed in these FEAs, allowing them to be used in poor vacuums. The resistance produces a significant RC time constant, limiting the frequency at which the gate-tip voltage can be modulated. However, the value of the resistance appropriate for display applications may be much larger than required to reduce arc damage. Similarly, the capacitance in series with the resistor can be made very small. Thus it may be possible to use integrated resistance to limit arc damage while maintaining RF modulation compatibility.
{"title":"Prospects for reducing arc damage in RF-compatible FEAs","authors":"J. Shaw, H. Gray","doi":"10.1109/IVMC.1996.601884","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601884","url":null,"abstract":"A primary failure and degradation mechanism in FEAs is arc damage. Our measurements show that arc damage is reduced by placing resistance in series with FEAs, but appears to remain the dominant failure mechanism. Once ignited, an arc can potentially dissipate most of the energy stored in the charged capacitance of the FEA, regardless of how well protected the FEA is. Simple calculations show that the energy stored in a state-of-the-art low capacitance FEA is more than enough to melt sufficient material to ruin a tip or form a short between a tip and the gate. In order to produce more uniform emission for display applications, resistances are typically incorporated into the array in series with each tip. Arc damage has been suppressed in these FEAs, allowing them to be used in poor vacuums. The resistance produces a significant RC time constant, limiting the frequency at which the gate-tip voltage can be modulated. However, the value of the resistance appropriate for display applications may be much larger than required to reduce arc damage. Similarly, the capacitance in series with the resistor can be made very small. Thus it may be possible to use integrated resistance to limit arc damage while maintaining RF modulation compatibility.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121205628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601875
Baoping Wang, Yongming Tang, J. Sin, V. Poon
In this paper, capacitance of diode vacuum microelectronic devices with different field emitter shapes are studied. By using finite difference method, electric field and capacitance of field emitters with five different shapes are calculated. Calculation results show that the emitter shape has a larger effect on the field enhancement than on the capacitance. When the anode diameter is decreased from 8 /spl mu/m to 4 /spl mu/m, the capacitance can be decreased by ten times for the sharp tip-on-post field emitter. When the distance between the cathode and the anode and the height of the field emitter are increased by 2 /spl mu/m, the capacitance can be increased by about 30% for the sharp tip-on-post field emitter.
{"title":"On the capacitance of vacuum microelectronic devices with different field emitter shapes","authors":"Baoping Wang, Yongming Tang, J. Sin, V. Poon","doi":"10.1109/IVMC.1996.601875","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601875","url":null,"abstract":"In this paper, capacitance of diode vacuum microelectronic devices with different field emitter shapes are studied. By using finite difference method, electric field and capacitance of field emitters with five different shapes are calculated. Calculation results show that the emitter shape has a larger effect on the field enhancement than on the capacitance. When the anode diameter is decreased from 8 /spl mu/m to 4 /spl mu/m, the capacitance can be decreased by ten times for the sharp tip-on-post field emitter. When the distance between the cathode and the anode and the height of the field emitter are increased by 2 /spl mu/m, the capacitance can be increased by about 30% for the sharp tip-on-post field emitter.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115960366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601844
J. Fleming, D. King, C.C. Barren
In order to reduce capacitance between emitter and gate electrodes, it is desirable to maximize the thickness of the oxide separating the electrodes. Parts with large (15 /spl mu/) emitter-to-gate electrode spacing have been fabricated using mold micromachining processes. The gates are self aligned to the emitter tip using CMP. The process results in planar features which are potentially compatible with CMOS processing.
{"title":"Fabrication of gated silicon spike emitter structures using micromachining mold technology","authors":"J. Fleming, D. King, C.C. Barren","doi":"10.1109/IVMC.1996.601844","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601844","url":null,"abstract":"In order to reduce capacitance between emitter and gate electrodes, it is desirable to maximize the thickness of the oxide separating the electrodes. Parts with large (15 /spl mu/) emitter-to-gate electrode spacing have been fabricated using mold micromachining processes. The gates are self aligned to the emitter tip using CMP. The process results in planar features which are potentially compatible with CMOS processing.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123836581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601771
D. Bernatskiĭ, V. Pavlov
Field desorption and surface diffusion of alkali and alkaline-earth metal (Na, Cs, Ba) atoms adsorbed on tungsten and iridium substrates were studied by methods of field emission microscopy. For all adatom-substrate systems studied a continuous imaging of surface in field desorption microscopy was achieved. The dependences of desorption field strength versus adsorbate concentration correlate with changes of work function of surface.
{"title":"Study of field desorption and adatom diffusion by means of direct field desorption ion imaging","authors":"D. Bernatskiĭ, V. Pavlov","doi":"10.1109/IVMC.1996.601771","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601771","url":null,"abstract":"Field desorption and surface diffusion of alkali and alkaline-earth metal (Na, Cs, Ba) atoms adsorbed on tungsten and iridium substrates were studied by methods of field emission microscopy. For all adatom-substrate systems studied a continuous imaging of surface in field desorption microscopy was achieved. The dependences of desorption field strength versus adsorbate concentration correlate with changes of work function of surface.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"263 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122903970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601904
C. Spindt, C. Holland, P. Schwoebel, I. Brodie
In this paper we report on our progress toward developing microfabricated field-emitter arrays to meet the microwave requirements for the ARPA/NRL Vacuum Microelectronics Initiative administrated by the NASA Lewis Research Center. The goal of the effort is to demonstrate 50 W output power at 10 GHz with a klystrode amplifier tube.
{"title":"Field-emitter-array development for microwave applications","authors":"C. Spindt, C. Holland, P. Schwoebel, I. Brodie","doi":"10.1109/IVMC.1996.601904","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601904","url":null,"abstract":"In this paper we report on our progress toward developing microfabricated field-emitter arrays to meet the microwave requirements for the ARPA/NRL Vacuum Microelectronics Initiative administrated by the NASA Lewis Research Center. The goal of the effort is to demonstrate 50 W output power at 10 GHz with a klystrode amplifier tube.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124763411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601815
J. Lee, K. Liu, F. Chuang, C.Y. Sun, C.M. Huang, I. Lin
Au-precoating on silicon substrate was observed to enhance the field emission characteristics of diamond films deposited by chemical vapor deposition technique. The emission current density increased substantially from 1 /spl mu/A/cm/sup 2/ to 100 /spl mu/A/cm/sup 2/, while the turn on voltage decreased moderately from 14 MV/m to 10 MV/m. Raman spectra and electron diffraction in transmission electron microscopy (TEM) revealed that both diamond films deposited on Si or Au-coated Si (Au/Si) were nanosized crystals. The Au species were assumed to diffuse along grain boundaries, resulting in low resistance diamond films. Abundant supply of electrons via conducting grain boundaries was presumably the mechanism that enhanced the field emission of the diamond films grown on Au/Si substrates.
{"title":"Effect of Au buffer on the field emission characteristics of chemical vapor deposited diamond films","authors":"J. Lee, K. Liu, F. Chuang, C.Y. Sun, C.M. Huang, I. Lin","doi":"10.1109/IVMC.1996.601815","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601815","url":null,"abstract":"Au-precoating on silicon substrate was observed to enhance the field emission characteristics of diamond films deposited by chemical vapor deposition technique. The emission current density increased substantially from 1 /spl mu/A/cm/sup 2/ to 100 /spl mu/A/cm/sup 2/, while the turn on voltage decreased moderately from 14 MV/m to 10 MV/m. Raman spectra and electron diffraction in transmission electron microscopy (TEM) revealed that both diamond films deposited on Si or Au-coated Si (Au/Si) were nanosized crystals. The Au species were assumed to diffuse along grain boundaries, resulting in low resistance diamond films. Abundant supply of electrons via conducting grain boundaries was presumably the mechanism that enhanced the field emission of the diamond films grown on Au/Si substrates.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126091953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601895
D. V. Sokolov, D. Trubetskov
We present the results of a theoretical study of the microelectronic modification of a crossed-field amplifier with two delay lines. This device permits one to receive high gain for the typical parameters of field-emission cathodes and delay lines.
{"title":"Microelectronic field-emission crossed-field amplifier with two delay lines","authors":"D. V. Sokolov, D. Trubetskov","doi":"10.1109/IVMC.1996.601895","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601895","url":null,"abstract":"We present the results of a theoretical study of the microelectronic modification of a crossed-field amplifier with two delay lines. This device permits one to receive high gain for the typical parameters of field-emission cathodes and delay lines.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125839412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601922
B. Johnson, A. Akinwande, D. Murphy
Measurements on arrays of lateral thin-film-edge field emitters are described, including current-voltage characteristics and results obtained with a high-voltage (10 kV) cathodoluminescent phosphor screen. These devices offer the potential for enhanced emitter lifetime compared to conventional microtips, because one of the gate electrodes protects the emitter edge from ion sputter damage. One goal of this work is to demonstrate the feasibility of a cathodoluminescent field emitter lamp for a high-brightness backlight in an avionics AMLCD display.
{"title":"Characterization of lateral thin-film-edge field emitter arrays","authors":"B. Johnson, A. Akinwande, D. Murphy","doi":"10.1109/IVMC.1996.601922","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601922","url":null,"abstract":"Measurements on arrays of lateral thin-film-edge field emitters are described, including current-voltage characteristics and results obtained with a high-voltage (10 kV) cathodoluminescent phosphor screen. These devices offer the potential for enhanced emitter lifetime compared to conventional microtips, because one of the gate electrodes protects the emitter edge from ion sputter damage. One goal of this work is to demonstrate the feasibility of a cathodoluminescent field emitter lamp for a high-brightness backlight in an avionics AMLCD display.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114414172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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