Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601785
J. Sáenz, G. Mesa
We present a method to calculate the interaction energies of a charge placed between a metallic tip of arbitrary shape and a sample surface. The basic idea is to replace the electrodes by a set of image charges. These charges are adjusted in order to fit the boundary conditions on the surfaces. As an application of the method, we describe the field characteristics of a field-emission diode as a function of the gap between the electrodes for different tip shapes. The three-dimensional potential barrier (including image corrections) for electron field emission is also calculated.
{"title":"Image charge method for electrostatic calculations in field emission diodes","authors":"J. Sáenz, G. Mesa","doi":"10.1109/IVMC.1996.601785","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601785","url":null,"abstract":"We present a method to calculate the interaction energies of a charge placed between a metallic tip of arbitrary shape and a sample surface. The basic idea is to replace the electrodes by a set of image charges. These charges are adjusted in order to fit the boundary conditions on the surfaces. As an application of the method, we describe the field characteristics of a field-emission diode as a function of the gap between the electrodes for different tip shapes. The three-dimensional potential barrier (including image corrections) for electron field emission is also calculated.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132605604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601817
I. Chung, A. Hariz, M. Haskard, B. Ju, M. Oh
This paper investigates the merits of chromium silicide coating of microtips. The chromium coated silicon microtips were prepared by the silicidation process. The current-voltage characteristics, current fluctuation and surface morphologies of each sample were measured and analysed. It was found that the application of chromium silicide to silicon field emitters decreases the current fluctuation range to about 50 % that of a pure silicon emitter and shows high discharge resistance. Furthermore, it increases the emission current and reduces the onset voltage of tunnelling. The reason for this stabilisation can be explained by the reduced number of chemically active sites resulting in a silicide-protected and chemically-stable layer, and higher electrical conductivity of the material.
{"title":"Surface application of chromium silicide for improved stability of field emitter arrays","authors":"I. Chung, A. Hariz, M. Haskard, B. Ju, M. Oh","doi":"10.1109/IVMC.1996.601817","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601817","url":null,"abstract":"This paper investigates the merits of chromium silicide coating of microtips. The chromium coated silicon microtips were prepared by the silicidation process. The current-voltage characteristics, current fluctuation and surface morphologies of each sample were measured and analysed. It was found that the application of chromium silicide to silicon field emitters decreases the current fluctuation range to about 50 % that of a pure silicon emitter and shows high discharge resistance. Furthermore, it increases the emission current and reduces the onset voltage of tunnelling. The reason for this stabilisation can be explained by the reduced number of chemically active sites resulting in a silicide-protected and chemically-stable layer, and higher electrical conductivity of the material.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132711964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601903
E. Goldburt, R. Bhargava
Recent discovery of efficient doped nanocrystalline (DNC) luminescent materials in the size range of 30 - 50 E can yield low voltage phosphors for Field Emission displays (FED). The surface related nonradiative contribution in the nanocrystalline phosphors can be reduced by the incorporation of the activator. In this work we report the variation of luminescent efficiency with size of doped nanocrystalline Y/sub 2/O/sub 3/:Tb phosphor. A correlation between the optical and microstructural properties of the samples was established. The microstructural properties of the doped nanocrystals were studied using transmission electron microscopy (TEM). The sizes as determined from electron microscopy, were correlated with the luminescent efficiencies of the doped nanocrystalline phosphors. We observe that the decrease in the particle size of the doped nanocrystalline phosphor results in the increase of the photoluminescent efficiency. This result indicates that the surfaces do not play a dominant role in the efficiency in the doped nanocrystalline phosphors and should allow us to produce better low voltage displays.
{"title":"Doped nanocrystalline phosphors for low voltage displays","authors":"E. Goldburt, R. Bhargava","doi":"10.1109/IVMC.1996.601903","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601903","url":null,"abstract":"Recent discovery of efficient doped nanocrystalline (DNC) luminescent materials in the size range of 30 - 50 E can yield low voltage phosphors for Field Emission displays (FED). The surface related nonradiative contribution in the nanocrystalline phosphors can be reduced by the incorporation of the activator. In this work we report the variation of luminescent efficiency with size of doped nanocrystalline Y/sub 2/O/sub 3/:Tb phosphor. A correlation between the optical and microstructural properties of the samples was established. The microstructural properties of the doped nanocrystals were studied using transmission electron microscopy (TEM). The sizes as determined from electron microscopy, were correlated with the luminescent efficiencies of the doped nanocrystalline phosphors. We observe that the decrease in the particle size of the doped nanocrystalline phosphor results in the increase of the photoluminescent efficiency. This result indicates that the surfaces do not play a dominant role in the efficiency in the doped nanocrystalline phosphors and should allow us to produce better low voltage displays.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133524882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601897
Y. Zakharchenko, N. I. Sinitsyn, Y. Gulyaev
A possibility for designing a distributed MW generator on field emitter arrays (FEAs) has been studied which involves a waveguide interaction system (WIS) as a circular distributed resonator (CDR). This generator was shown to be capable of operating in the millimeter wavelength band with low voltages and beam current densities and to provide an efficiency to 20%. The electrical tuning of the generator in frequency can achieve 30% for one of its versions.
{"title":"Distributed generator with extended interaction on field emitter arrays","authors":"Y. Zakharchenko, N. I. Sinitsyn, Y. Gulyaev","doi":"10.1109/IVMC.1996.601897","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601897","url":null,"abstract":"A possibility for designing a distributed MW generator on field emitter arrays (FEAs) has been studied which involves a waveguide interaction system (WIS) as a circular distributed resonator (CDR). This generator was shown to be capable of operating in the millimeter wavelength band with low voltages and beam current densities and to provide an efficiency to 20%. The electrical tuning of the generator in frequency can achieve 30% for one of its versions.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133458373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601826
W. Choi, A. Myers, G. Wojak, M. McClure, J. Cuomo, J. Hren
To improve the performance of molybdenum and silicon field emitters, thin diamond layers were deposited on needles by dielectrophoresis. Field emission characteristics were investigated before and after diamond deposition. SEM and TEM observation demonstrated that a significant amount of diamond was deposited. The emissivity depended upon the thickness deposited, the thermal treatment of the diamond after deposition. The influence of the emitter/diamond interface and the surface treatment of the diamond, are reported here, along with a discussion of the possible mechanisms.
{"title":"The effects of the interface and surface treatment on the electron emission from diamond coated field emitters","authors":"W. Choi, A. Myers, G. Wojak, M. McClure, J. Cuomo, J. Hren","doi":"10.1109/IVMC.1996.601826","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601826","url":null,"abstract":"To improve the performance of molybdenum and silicon field emitters, thin diamond layers were deposited on needles by dielectrophoresis. Field emission characteristics were investigated before and after diamond deposition. SEM and TEM observation demonstrated that a significant amount of diamond was deposited. The emissivity depended upon the thickness deposited, the thermal treatment of the diamond after deposition. The influence of the emitter/diamond interface and the surface treatment of the diamond, are reported here, along with a discussion of the possible mechanisms.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116444587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601880
B. Ju, Seong-jin Kim, Yun‐Hi Lee, B. S. Park, Y. Baik, Sungkyoo Lim, M. Oh
Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 A was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 /spl mu/A and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 /spl mu/A and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.
{"title":"Characterization of CVD diamond film and diamond-tip field emitter array for FED applications","authors":"B. Ju, Seong-jin Kim, Yun‐Hi Lee, B. S. Park, Y. Baik, Sungkyoo Lim, M. Oh","doi":"10.1109/IVMC.1996.601880","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601880","url":null,"abstract":"Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 A was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 /spl mu/A and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 /spl mu/A and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131775406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601867
M. V. Loginov, V.N. Shrednik
The chemical composition of thermo-field microprotrusions, growing on the central top {110}-plane of W-tip, coated with some monoatomic layers of Si, has been studied by time of flight atom probe. It has been shown that the upper monoatomic layer of the protrusion is formed by WSi/sub 2/, and the bulk composition corresponds to WSi/sub 3/.
{"title":"Field evaporation of tungsten silicides microprotrusions","authors":"M. V. Loginov, V.N. Shrednik","doi":"10.1109/IVMC.1996.601867","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601867","url":null,"abstract":"The chemical composition of thermo-field microprotrusions, growing on the central top {110}-plane of W-tip, coated with some monoatomic layers of Si, has been studied by time of flight atom probe. It has been shown that the upper monoatomic layer of the protrusion is formed by WSi/sub 2/, and the bulk composition corresponds to WSi/sub 3/.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"293 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131931541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601902
A. Vecht
The great strides that have been made recently in the development and understanding of electron emission from microtips have led to the recognition of a need for a new type of phosphor. Clearly, the potential of the improved microtips for field emission displays (FEDs) will be realised only if phosphors are available to convert the electrons released into useful light with correct colour gamut. Although phosphors with good efficiency (over 10%) and with full colour have been successfully developed for high voltage cathode tube and fluorescent application, such materials cannot be used without modification for efficient FEDs. We summarise results obtained in the 300-3000 V regions; most recently published data is confined to this regime. A summary of the present state-of-the-art is given.
{"title":"Low voltage phosphors for FEDs","authors":"A. Vecht","doi":"10.1109/IVMC.1996.601902","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601902","url":null,"abstract":"The great strides that have been made recently in the development and understanding of electron emission from microtips have led to the recognition of a need for a new type of phosphor. Clearly, the potential of the improved microtips for field emission displays (FEDs) will be realised only if phosphors are available to convert the electrons released into useful light with correct colour gamut. Although phosphors with good efficiency (over 10%) and with full colour have been successfully developed for high voltage cathode tube and fluorescent application, such materials cannot be used without modification for efficient FEDs. We summarise results obtained in the 300-3000 V regions; most recently published data is confined to this regime. A summary of the present state-of-the-art is given.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132800601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601830
E. I. Givargizov, V. Zhirnov, N. Chubun, A. Voronin
Cold cathodes based on single sharp silicon tip with diamond coating were tested for electron gun application. Emission stability, reproducibility of current-voltage characteristics as well as emission divergence were studied. No hysteresis or shift of the emission characteristics at long-time repeated measurements have been found. Low-frequency current fluctuations were less than 10%. The life test of a cathode have been performed during 120 hours. The current decrease was within 10% of the initial value at the end of the test. The angular divergence of the emission was within 3/sup 0/.
{"title":"Diamond cold cathodes for electron guns","authors":"E. I. Givargizov, V. Zhirnov, N. Chubun, A. Voronin","doi":"10.1109/IVMC.1996.601830","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601830","url":null,"abstract":"Cold cathodes based on single sharp silicon tip with diamond coating were tested for electron gun application. Emission stability, reproducibility of current-voltage characteristics as well as emission divergence were studied. No hysteresis or shift of the emission characteristics at long-time repeated measurements have been found. Low-frequency current fluctuations were less than 10%. The life test of a cathode have been performed during 120 hours. The current decrease was within 10% of the initial value at the end of the test. The angular divergence of the emission was within 3/sup 0/.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121871095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601862
V. Makhov
This paper describes the results of research and development of low-voltage pulsed magnetrons with autoelectronic starting into operating conditions. Autoelectronic cathodes ensure an autoelectronic current greater than 1.2 mA. At constant voltage more than 1.5 kV was obtained. This ensures stable magnetron starting into operating conditions at the frequency of 2.4 GHz with pulse duration of /spl tau//sub puls/-1 /spl mu/s.
{"title":"Low voltage pulsed magnetron with heating free excitation","authors":"V. Makhov","doi":"10.1109/IVMC.1996.601862","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601862","url":null,"abstract":"This paper describes the results of research and development of low-voltage pulsed magnetrons with autoelectronic starting into operating conditions. Autoelectronic cathodes ensure an autoelectronic current greater than 1.2 mA. At constant voltage more than 1.5 kV was obtained. This ensures stable magnetron starting into operating conditions at the frequency of 2.4 GHz with pulse duration of /spl tau//sub puls/-1 /spl mu/s.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125164427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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