Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601859
Jau-Sung Lee, Kuo-Shung Liu, I. Lin
Diamonds were successfully nucleated on SiO/sub 2/-coated silicon substrates using high power microwave plasma enhanced chemical vapor deposition (CVD) process. Nucleation rate on SiO/sub 2/ surface (i.e., 0.5/spl times/10/sup 10/ cm/sup -2/) is, however, still smaller than that on Si surface (i.e., 1.0/spl times/10/sup 10/ cm/sup -2/). The growth of diamonds behaved similarly on the pre-nucleated surface, regardless of the nature of the substrates. Diamonds were of single grain columnar structure with random orientation when deposited without bias and were of multigrain columnar structure with [001] preferred orientation when deposited under -100 VDC bias. Multigrain columnar structure was ascribed to the induction of secondary nucleation at the presence of bias voltage.
{"title":"Deposition of diamond films on SiO/sub 2/ surface using high power microwave enhanced chemical vapor deposition process","authors":"Jau-Sung Lee, Kuo-Shung Liu, I. Lin","doi":"10.1109/IVMC.1996.601859","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601859","url":null,"abstract":"Diamonds were successfully nucleated on SiO/sub 2/-coated silicon substrates using high power microwave plasma enhanced chemical vapor deposition (CVD) process. Nucleation rate on SiO/sub 2/ surface (i.e., 0.5/spl times/10/sup 10/ cm/sup -2/) is, however, still smaller than that on Si surface (i.e., 1.0/spl times/10/sup 10/ cm/sup -2/). The growth of diamonds behaved similarly on the pre-nucleated surface, regardless of the nature of the substrates. Diamonds were of single grain columnar structure with random orientation when deposited without bias and were of multigrain columnar structure with [001] preferred orientation when deposited under -100 VDC bias. Multigrain columnar structure was ascribed to the induction of secondary nucleation at the presence of bias voltage.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131145803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601824
V. Zhirnov, E. I. Givargizov, A. V. Kandidov, B. V. Seleznev, A.N. Alimova
Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes.
{"title":"Emission characterization of diamond coated Si FEAs","authors":"V. Zhirnov, E. I. Givargizov, A. V. Kandidov, B. V. Seleznev, A.N. Alimova","doi":"10.1109/IVMC.1996.601824","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601824","url":null,"abstract":"Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130680327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601853
D. King, J. Fleming
Vertical metal edge emitter arrays with well defined emitter-to-gate separations have been fabricated. Preliminary tests are reported on the operation of these cylindrical emitter tips. The emitter-to-gate spacing is determined by the thickness of a deposited layer which can also serve as a current limiting resistor. Current limiting resistors can also be formed by a self aligned etch of the underlying substrate. Emitters have been fabricated using either reactive ion etching or chemical mechanical polishing. The emitting material is titanium nitride. The process does not rely on high resolution photolithography and is CMOS compatible. The process technique allows the emitter tip to be placed below, even with, or above the gate structure. The emitter edges in this configuration were approximately 0.1 /spl mu/m above the gate structure. The emitter-to-gate spacing is approximately 0.1 to 0.2 /spl mu/m. The thickness of the SiO/sub 2/ insulator between the gate and substrate is approximately 0.6 /spl mu/m. Single tip structures have been fabricated as well as arrays of 100 and 10000 tips. The emitter tip-to-tip spacing in multi-tip arrays is 5 /spl mu/m.
{"title":"Testing of fillet emitter structures with well defined emitter-to-gate spacings","authors":"D. King, J. Fleming","doi":"10.1109/IVMC.1996.601853","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601853","url":null,"abstract":"Vertical metal edge emitter arrays with well defined emitter-to-gate separations have been fabricated. Preliminary tests are reported on the operation of these cylindrical emitter tips. The emitter-to-gate spacing is determined by the thickness of a deposited layer which can also serve as a current limiting resistor. Current limiting resistors can also be formed by a self aligned etch of the underlying substrate. Emitters have been fabricated using either reactive ion etching or chemical mechanical polishing. The emitting material is titanium nitride. The process does not rely on high resolution photolithography and is CMOS compatible. The process technique allows the emitter tip to be placed below, even with, or above the gate structure. The emitter edges in this configuration were approximately 0.1 /spl mu/m above the gate structure. The emitter-to-gate spacing is approximately 0.1 to 0.2 /spl mu/m. The thickness of the SiO/sub 2/ insulator between the gate and substrate is approximately 0.6 /spl mu/m. Single tip structures have been fabricated as well as arrays of 100 and 10000 tips. The emitter tip-to-tip spacing in multi-tip arrays is 5 /spl mu/m.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123555440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601790
J.T. Trujlllo, A. Chakhovskoi, C. Hunt
The effects of pressure on emission current noise have been studied. Field emission currents from silicon devices were observed over a range of pressures. The current fluctuations were analyzed in both the time and frequency domain. Signal to noise ratios between 0.9 and 6.9 were observed. These values appear to be more dependent on operation time than on pressures. Spectral density coefficients of low frequency measurements range from -1.37 to -1.81. Some pressure dependence is suggested in the lower pressure ranges. At higher pressures emission currents seem to be reduced and the current is cut off completely above a threshold pressure which is somewhere in the 10's of Torr.
{"title":"Effects of vacuum conditions on low frequency noise in silicon field emission devices","authors":"J.T. Trujlllo, A. Chakhovskoi, C. Hunt","doi":"10.1109/IVMC.1996.601790","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601790","url":null,"abstract":"The effects of pressure on emission current noise have been studied. Field emission currents from silicon devices were observed over a range of pressures. The current fluctuations were analyzed in both the time and frequency domain. Signal to noise ratios between 0.9 and 6.9 were observed. These values appear to be more dependent on operation time than on pressures. Spectral density coefficients of low frequency measurements range from -1.37 to -1.81. Some pressure dependence is suggested in the lower pressure ranges. At higher pressures emission currents seem to be reduced and the current is cut off completely above a threshold pressure which is somewhere in the 10's of Torr.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124597599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601860
J. Lee, K. Liu, I. Lin
A diamond film consisting of almost 100% [001] grains can be synthesized at a fast rate (/spl sim/3 /spl mu/m/h) by a two-step process. First, the nuclei are formed under -160 VDC bias with 3 mol% CH/sub 4//H/sub 2/ at 900/spl deg/C substrate temperature and then the films are grown under -100 VDC bias with around 5-6 mol% CH/sub 4//H/sub 2/ at the same temperature. The nucleation of the diamond is enhanced by using bias voltage. The a- and b-axes of [001] textured diamond films grown under large bias voltage are aligned with a- and b-axes of silicon, viz. (100)/sub dia//spl par/(100)/sub Si/ and [110]/sub dia//spl par/[110]/sub Si/. The effect of bias voltage on the growth behavior of the diamond films is accounted for by the suppression of the growth of the non-[001] grains due to the electron emission under bias.
{"title":"DC bias effect on the synthesis of [001] textured diamond films on silicon","authors":"J. Lee, K. Liu, I. Lin","doi":"10.1109/IVMC.1996.601860","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601860","url":null,"abstract":"A diamond film consisting of almost 100% [001] grains can be synthesized at a fast rate (/spl sim/3 /spl mu/m/h) by a two-step process. First, the nuclei are formed under -160 VDC bias with 3 mol% CH/sub 4//H/sub 2/ at 900/spl deg/C substrate temperature and then the films are grown under -100 VDC bias with around 5-6 mol% CH/sub 4//H/sub 2/ at the same temperature. The nucleation of the diamond is enhanced by using bias voltage. The a- and b-axes of [001] textured diamond films grown under large bias voltage are aligned with a- and b-axes of silicon, viz. (100)/sub dia//spl par/(100)/sub Si/ and [110]/sub dia//spl par/[110]/sub Si/. The effect of bias voltage on the growth behavior of the diamond films is accounted for by the suppression of the growth of the non-[001] grains due to the electron emission under bias.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114305595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601807
E. Afanas’eva, S. M. Solov'ev
The mechanism of thin silicide film growth on Nb and Ta surfaces depended on the substrate temperature. At room temperature the layer-by-layer growth of Si on Ta and Nb took place. The surface density of Si in one monolayer was 9.3.10/sup 14/ at/cm/sup 2/ on Ta and Nb. The onset of the penetration Si into Nb and Ta was observed at T>900 K. At this temperature the composition NbSi/sub 2/ and TaSi/sub 2/ were formed. At temperature T>1360 K for Ta and T>1270 K for Nb a structural phase transition occurred and silicide Ta/sub 4/Si and Nb/sub 4/Si was formed after reaching a certain critical concentration of Si in the subsurface region. Phase transition was followed by increase of the Si atoms diffusion from the surface into the bulk.
在Nb和Ta表面生长硅化物薄膜的机理与衬底温度有关。室温下，Si在Ta和Nb上逐层生长。Si在Ta和Nb上的表面密度为9.3.10/sup 14/ at/cm/sup 2/。在温度>900 K时，Si开始渗入Nb和Ta。在此温度下形成NbSi/sub - 2/和TaSi/sub - 2/组合物。当温度T>1360 K (Ta)和T>1270 K (Nb)时发生结构相变，在地下区域达到一定临界Si浓度后形成硅化物Ta/sub - 4/Si和Nb/sub - 4/Si。相变发生后，Si原子从表面向体体扩散增加。
{"title":"Formation of thin silicide films on Ta and Nb surfaces","authors":"E. Afanas’eva, S. M. Solov'ev","doi":"10.1109/IVMC.1996.601807","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601807","url":null,"abstract":"The mechanism of thin silicide film growth on Nb and Ta surfaces depended on the substrate temperature. At room temperature the layer-by-layer growth of Si on Ta and Nb took place. The surface density of Si in one monolayer was 9.3.10/sup 14/ at/cm/sup 2/ on Ta and Nb. The onset of the penetration Si into Nb and Ta was observed at T>900 K. At this temperature the composition NbSi/sub 2/ and TaSi/sub 2/ were formed. At temperature T>1360 K for Ta and T>1270 K for Nb a structural phase transition occurred and silicide Ta/sub 4/Si and Nb/sub 4/Si was formed after reaching a certain critical concentration of Si in the subsurface region. Phase transition was followed by increase of the Si atoms diffusion from the surface into the bulk.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116855981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601841
C. Hagen, G.P.E.M. van Bakel, E. Borgonjen, P. Kruit, V. Kazmiruk, V. Kudryashov
A novel tunnel junction emitter based on ballistic electron transmission through ultra-thin metal foils is proposed as an electron source. From a simple planar tunneling model and Monte-Carlo simulations, we show that either a high-brightness monochromatic electron source can be obtained or a high-current source with energy spread comparable with a field emission source. Freestanding 5 nm thick Pt films were successfully fabricated for the construction of a tunnel junction electron source, in which a UHV-STM is used as a tip-emitter positioning device.
{"title":"A novel low-voltage ballistic-electron-emission source","authors":"C. Hagen, G.P.E.M. van Bakel, E. Borgonjen, P. Kruit, V. Kazmiruk, V. Kudryashov","doi":"10.1109/IVMC.1996.601841","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601841","url":null,"abstract":"A novel tunnel junction emitter based on ballistic electron transmission through ultra-thin metal foils is proposed as an electron source. From a simple planar tunneling model and Monte-Carlo simulations, we show that either a high-brightness monochromatic electron source can be obtained or a high-current source with energy spread comparable with a field emission source. Freestanding 5 nm thick Pt films were successfully fabricated for the construction of a tunnel junction electron source, in which a UHV-STM is used as a tip-emitter positioning device.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115390725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601781
Y. Zakharchenko, N. I. Sinitsyn, Y. Gulyaev
On the base of the theory of conformal transformations of complex functions developed was a method to rigorously solve the electrostatic problem for two-dimensional diode and triode systems having edge arrays whose faces are formed by a periodic nanodimensional array of field emitting centers. The method proposed is used to simulate the emission and electrodynamic characteristics of near-cathode MW triode-like modulators.
{"title":"Simulation of field emission and electrodynamic characteristics for triode nearcathode modulators with edge field emitter arrays","authors":"Y. Zakharchenko, N. I. Sinitsyn, Y. Gulyaev","doi":"10.1109/IVMC.1996.601781","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601781","url":null,"abstract":"On the base of the theory of conformal transformations of complex functions developed was a method to rigorously solve the electrostatic problem for two-dimensional diode and triode systems having edge arrays whose faces are formed by a periodic nanodimensional array of field emitting centers. The method proposed is used to simulate the emission and electrodynamic characteristics of near-cathode MW triode-like modulators.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122698497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601905
A. V. Galdetskiy
Analytical one-dimensional theory is developed, describing field emission modulation and electron bunching in static and small RF fields. It takes exactly in account the influence of the static field and space charge and is valid for various current sources, providing unidirectional electron motion. On this base a new type of input stage for klystrode-type devices is considered which consists of an FEA triode with finite transit angle. The effective gain of this modulator is an order of magnitude greater than the gain of a conventional modulator.
{"title":"Current bunching in static field and novel input stage for microwave devices based on spindt type cathodes","authors":"A. V. Galdetskiy","doi":"10.1109/IVMC.1996.601905","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601905","url":null,"abstract":"Analytical one-dimensional theory is developed, describing field emission modulation and electron bunching in static and small RF fields. It takes exactly in account the influence of the static field and space charge and is valid for various current sources, providing unidirectional electron motion. On this base a new type of input stage for klystrode-type devices is considered which consists of an FEA triode with finite transit angle. The effective gain of this modulator is an order of magnitude greater than the gain of a conventional modulator.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124714688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601777
B. B. Rodnevich
Energy spectra of field emission were studied for various shapes of microroughness, i.e. a semiellipsoid, a cylinder with a semisphere on the top, a frustrum of cone with a semisphere on the top, a cone with an acute angle, etc., and also for various values of the nondimensional parameter M: M=/spl phi//sub 0//E/sub 0//spl middot/a, where a is the height of a microroughness.
{"title":"Energy spectrum of field emission","authors":"B. B. Rodnevich","doi":"10.1109/IVMC.1996.601777","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601777","url":null,"abstract":"Energy spectra of field emission were studied for various shapes of microroughness, i.e. a semiellipsoid, a cylinder with a semisphere on the top, a frustrum of cone with a semisphere on the top, a cone with an acute angle, etc., and also for various values of the nondimensional parameter M: M=/spl phi//sub 0//E/sub 0//spl middot/a, where a is the height of a microroughness.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128868056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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