Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601780
N.O. Bessudnova, A. G. Rozhnev, D. Trubetskov
The nonlinear nonstationary 1D theory of miniature low-voltage Backward-Wave Oscillator (BWO), taking into account velocity distribution in electron beam is considered. The phenomenon of automodulation threshold shift when velocity spread increases is investigated. The developed code on BWO numerical simulation can be readily applied to different kind distributions.
{"title":"Velocity distribution effect in microwave vacuum microelectronics devices","authors":"N.O. Bessudnova, A. G. Rozhnev, D. Trubetskov","doi":"10.1109/IVMC.1996.601780","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601780","url":null,"abstract":"The nonlinear nonstationary 1D theory of miniature low-voltage Backward-Wave Oscillator (BWO), taking into account velocity distribution in electron beam is considered. The phenomenon of automodulation threshold shift when velocity spread increases is investigated. The developed code on BWO numerical simulation can be readily applied to different kind distributions.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125219913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601913
L. Gerchikov, A. Subashiev
Summary form only given, as follows. The variation of the photoemission from the negative electron affinity (NEA) semiconductor surface with the position of the surface Fermi level is theoretically studied. Resonance maxima both in photoyield and the surface recombination rate (when the depth and the width of the quantum well in the band bending region (BBR) are close to the appearance of the new quantum level) are predicted as a result of quantum character of the electron motion in the BBR. The resonance BBR transmission is expected to manifest itself in the temperature, doping, and thickness of the activation layer photoyield dependence. The experimental studies of the dependencies should help to monitor the evolution of the BBR during surface activation to the NEA state.
{"title":"Resonances in photoemission from semiconductors with negative electron affinity","authors":"L. Gerchikov, A. Subashiev","doi":"10.1109/IVMC.1996.601913","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601913","url":null,"abstract":"Summary form only given, as follows. The variation of the photoemission from the negative electron affinity (NEA) semiconductor surface with the position of the surface Fermi level is theoretically studied. Resonance maxima both in photoyield and the surface recombination rate (when the depth and the width of the quantum well in the band bending region (BBR) are close to the appearance of the new quantum level) are predicted as a result of quantum character of the electron motion in the BBR. The resonance BBR transmission is expected to manifest itself in the temperature, doping, and thickness of the activation layer photoyield dependence. The experimental studies of the dependencies should help to monitor the evolution of the BBR during surface activation to the NEA state.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125440578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601836
F. Chuang, C.Y. Sun, H.F. Cheng, W. Wang, C.M. Huang, I. Lin
Diamond like carbon (DLC) films possessing large electron emission capacity were obtained by pulsed laser deposition process. AFM morphologies and Raman spectra inferred that the proportion of SP/sup 3/-bonds is the predominating factor modifying the field emission characteristics. Large laser fluence and moderately high substrate temperature are thus required. The critical laser fluence needed to deposit DLC films with large emission current density was 10 J/cm/sup 2/ for 248 nn (KrF) laser beams and 4 J/cm/sup 2/ for 193 nn (ArF) laser beams, respectively. The highest emission current density was 80 /spl mu/LA/cm/sup 2/ for DLC films deposited at 400/spl deg/C using 248 nn laser beams and was 160 /spl mu/A/cm/sup 2/ for those grown at 200/spl deg/C using 193 nm laser beams. The turn on electric field was, respectively, 11.6 MV/m and 11.4 MV/m.
{"title":"Electron emission characteristics of pulsed laser deposited diamond-like films","authors":"F. Chuang, C.Y. Sun, H.F. Cheng, W. Wang, C.M. Huang, I. Lin","doi":"10.1109/IVMC.1996.601836","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601836","url":null,"abstract":"Diamond like carbon (DLC) films possessing large electron emission capacity were obtained by pulsed laser deposition process. AFM morphologies and Raman spectra inferred that the proportion of SP/sup 3/-bonds is the predominating factor modifying the field emission characteristics. Large laser fluence and moderately high substrate temperature are thus required. The critical laser fluence needed to deposit DLC films with large emission current density was 10 J/cm/sup 2/ for 248 nn (KrF) laser beams and 4 J/cm/sup 2/ for 193 nn (ArF) laser beams, respectively. The highest emission current density was 80 /spl mu/LA/cm/sup 2/ for DLC films deposited at 400/spl deg/C using 248 nn laser beams and was 160 /spl mu/A/cm/sup 2/ for those grown at 200/spl deg/C using 193 nm laser beams. The turn on electric field was, respectively, 11.6 MV/m and 11.4 MV/m.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129460088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601923
O. Nishikawa, Y. Numada, M. Iwatsuki, S. Aoki, Y. Ishikawa
Summary form only given, as follows. A trial scanning atom probe (SAP) was constructed by modifying a low temperature UHV scanning tunneling microscope (STM). The specimen holder of the conventional STM was replaced with a holder of an extraction electrode made of a 10 micrometer thick Pt foil. The specimen micro-tip array is mounted at one end of a piezo tube which allows one to move the specimen with subnanometer precision. Silver foils connecting the cold end of the cryogenic refrigerator and the holder of the piezo tube cool the specimen and piezo assembly down to 50 K. Field emitted electrons and field ionized gas ions project images of an individual tip apex of a micro-tip array at atomic resolution and field evaporated apex atoms fly into the flight space of a reflectron mass analyzer through the probe hole at the center of the screen. The results of preliminary experiments are reported. While constructing the SAP, the field distributions around the tip apex were computed in order to examine the variation of field emitted current with the relative position of the tip apex and the open hole of the extraction electrode. The calculated field distribution is presented, comparing the observed variation of emitted current with the relative positions.
{"title":"A trial scanning atom probe and field distribution at a tip apex of a micro-tip array","authors":"O. Nishikawa, Y. Numada, M. Iwatsuki, S. Aoki, Y. Ishikawa","doi":"10.1109/IVMC.1996.601923","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601923","url":null,"abstract":"Summary form only given, as follows. A trial scanning atom probe (SAP) was constructed by modifying a low temperature UHV scanning tunneling microscope (STM). The specimen holder of the conventional STM was replaced with a holder of an extraction electrode made of a 10 micrometer thick Pt foil. The specimen micro-tip array is mounted at one end of a piezo tube which allows one to move the specimen with subnanometer precision. Silver foils connecting the cold end of the cryogenic refrigerator and the holder of the piezo tube cool the specimen and piezo assembly down to 50 K. Field emitted electrons and field ionized gas ions project images of an individual tip apex of a micro-tip array at atomic resolution and field evaporated apex atoms fly into the flight space of a reflectron mass analyzer through the probe hole at the center of the screen. The results of preliminary experiments are reported. While constructing the SAP, the field distributions around the tip apex were computed in order to examine the variation of field emitted current with the relative position of the tip apex and the open hole of the extraction electrode. The calculated field distribution is presented, comparing the observed variation of emitted current with the relative positions.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126359216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601890
Hu Lu-jiang, Zhu Chang-chun, Huai Yong-Jing, Tie Zhiling, Li Yuming, Guo Cailing
The processing developed recently for vacuum microelectronic flat-panel nixies is described, including mainly how to fabricate the anode pillars (array) and the transparent flat-panel vacuum packages. Flat-panel nixies have been fabricated by the processing. The I-V characteristic between gates and cathodes was ideal. Field emission characteristic, accompanied by fluorescent light was also detected between cathodes and anodes. There are still some problems in maintaining the vacuum in package. The reasons are analyzed in the last part of the paper.
{"title":"Research on the processing of vacuum microelectronic flat-panel displays","authors":"Hu Lu-jiang, Zhu Chang-chun, Huai Yong-Jing, Tie Zhiling, Li Yuming, Guo Cailing","doi":"10.1109/IVMC.1996.601890","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601890","url":null,"abstract":"The processing developed recently for vacuum microelectronic flat-panel nixies is described, including mainly how to fabricate the anode pillars (array) and the transparent flat-panel vacuum packages. Flat-panel nixies have been fabricated by the processing. The I-V characteristic between gates and cathodes was ideal. Field emission characteristic, accompanied by fluorescent light was also detected between cathodes and anodes. There are still some problems in maintaining the vacuum in package. The reasons are analyzed in the last part of the paper.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"310 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120847527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601805
Sanjo Lee, C. G. Ko, B. Ju, Yun‐Hi Lee, D. Jeon, M. Oh
The advantage of silicon field emitters is that one can use a VLSI fabrication process, but silicon itself is not a perfect material for use as a field emitter. To improve the material properties of the silicon emitter, we have coated silicon filled emission tips with diamond-like-carbon (DLC) films using PECVD. The DLC film can be formed at low temperature, is flat, and its properties can be controlled with growth condition. First, using a n-type silicon (100) wafer, silicon tips were formed and sharpened using conventional method of reactive ion etching and surface oxidation. To form a gate, a 5000 /spl Aring/ thick oxide layer was formed followed by a 3000 /spl Aring/ thick molybdenum film. Before DLC coating, aluminum was deposited to be used as a parting layer. After this, the oxide caps on the tips were removed. The radius of the silicon tips are 150 /spl Aring/. The DLC was grown on the room temperature surface using PECVD at 20 mTorr pressure. The thickness of the film was 100 /spl Aring/. Finally, the aluminum parting layer was lifted off. The diameter of the gate hole is 1.5 /spl mu/m, and the height of the tips was 0.8 /spl mu/m.
{"title":"Fabrication and field emission study of gated DLC-coated silicon tips","authors":"Sanjo Lee, C. G. Ko, B. Ju, Yun‐Hi Lee, D. Jeon, M. Oh","doi":"10.1109/IVMC.1996.601805","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601805","url":null,"abstract":"The advantage of silicon field emitters is that one can use a VLSI fabrication process, but silicon itself is not a perfect material for use as a field emitter. To improve the material properties of the silicon emitter, we have coated silicon filled emission tips with diamond-like-carbon (DLC) films using PECVD. The DLC film can be formed at low temperature, is flat, and its properties can be controlled with growth condition. First, using a n-type silicon (100) wafer, silicon tips were formed and sharpened using conventional method of reactive ion etching and surface oxidation. To form a gate, a 5000 /spl Aring/ thick oxide layer was formed followed by a 3000 /spl Aring/ thick molybdenum film. Before DLC coating, aluminum was deposited to be used as a parting layer. After this, the oxide caps on the tips were removed. The radius of the silicon tips are 150 /spl Aring/. The DLC was grown on the room temperature surface using PECVD at 20 mTorr pressure. The thickness of the film was 100 /spl Aring/. Finally, the aluminum parting layer was lifted off. The diameter of the gate hole is 1.5 /spl mu/m, and the height of the tips was 0.8 /spl mu/m.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124436517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601821
K. Park, J. Moon, Jae Gak Kim, S. Chung, M. Oh, Jin Jang
The N doping effect on the electrical conductivity and electron emission property for diamond like carbon (DLC) films deposited by PECVD has been studied. The electrical conductivity can be widely varied by n-type doping of the DLC. The relationship between the prefactor of conductivity and the conductivity activation energy satisfy the Meyer-Neldel relation: /spl sigma//sub 0/=/spl sigma//sub 00/exp(AE/sub a/) with A=19 eV/sup -1/ and /spl sigma//sub 00/=9/spl times/10/sup -8/ S/cm. The emission currents for heavily N doped DLC films are much higher than undoped DLC even though lightly N doped films show much smaller currents.
{"title":"Field emission of nitrogen doped DLC films deposited by PECVD","authors":"K. Park, J. Moon, Jae Gak Kim, S. Chung, M. Oh, Jin Jang","doi":"10.1109/IVMC.1996.601821","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601821","url":null,"abstract":"The N doping effect on the electrical conductivity and electron emission property for diamond like carbon (DLC) films deposited by PECVD has been studied. The electrical conductivity can be widely varied by n-type doping of the DLC. The relationship between the prefactor of conductivity and the conductivity activation energy satisfy the Meyer-Neldel relation: /spl sigma//sub 0/=/spl sigma//sub 00/exp(AE/sub a/) with A=19 eV/sup -1/ and /spl sigma//sub 00/=9/spl times/10/sup -8/ S/cm. The emission currents for heavily N doped DLC films are much higher than undoped DLC even though lightly N doped films show much smaller currents.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121280897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601784
F. Bass, V.D. Yeremka, O. Kulagin
This paper gives the expressions for electron emission current out of the semiconductor heated by the constant and variable electric fields when the magnetic field is present or does not exist. The corrections caused by heat dimensional effects have been taken into account. The cases of the normal and anomalous skin-effect have been considered separately. A new method based on the expressions obtained is proposed to find the effective electron mass, electron concentration, and characteristics of electron-phonon interaction in semiconductors.
{"title":"Emission of hot electrons out of semiconductors","authors":"F. Bass, V.D. Yeremka, O. Kulagin","doi":"10.1109/IVMC.1996.601784","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601784","url":null,"abstract":"This paper gives the expressions for electron emission current out of the semiconductor heated by the constant and variable electric fields when the magnetic field is present or does not exist. The corrections caused by heat dimensional effects have been taken into account. The cases of the normal and anomalous skin-effect have been considered separately. A new method based on the expressions obtained is proposed to find the effective electron mass, electron concentration, and characteristics of electron-phonon interaction in semiconductors.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"226 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114274986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601874
Chih-Wen Lu, Chung-Len Lee, J.M. Huang
The field emission array (FEA), when used as a display device, requires a scanning driving circuit. Due to the large FEA capacitance (typically 5 pF for one pixel), the driving circuit is usually slow. In this work, a new driving circuit, which employs the voltage controlled current source (VCCS), overcomes the above-mentioned problem, and thus can reach a high driving speed. In addition, the circuit has the advantages of uniform current driving, gray level control and low power consumption.
{"title":"A high speed circuit scheme for driving field emission array","authors":"Chih-Wen Lu, Chung-Len Lee, J.M. Huang","doi":"10.1109/IVMC.1996.601874","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601874","url":null,"abstract":"The field emission array (FEA), when used as a display device, requires a scanning driving circuit. Due to the large FEA capacitance (typically 5 pF for one pixel), the driving circuit is usually slow. In this work, a new driving circuit, which employs the voltage controlled current source (VCCS), overcomes the above-mentioned problem, and thus can reach a high driving speed. In addition, the circuit has the advantages of uniform current driving, gray level control and low power consumption.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123956957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601921
S. I. Shkuratov, I. Dorofeev, D.I. Volgunov, S. N. Shilimanov
Summary form only given, as follows. Results are presented of investigations of the fabrication processes of tip emitter structures using the scanning tunneling microscope (STM). Nanostructures were fabricated on the surface of multilayer thin film carbon/Me structures (Me: Cr, Fe, Ni, Mo). The number of layers was varied from 3 to 100. Nanotips were formed as a result of pulsed current action from the STM needle to the substrate: in a selected spot on the surface of the specimen the feedback of the STM servo system is interrupted and a voltage pulse several tens of nanoseconds wide is applied to the tunneling gap. After that using the same needle one can get an STM image of the tip emitter. The possibility is shown of fabricating tip emitter structures consisting of hundreds of nanotips. Factors influencing the nanotip parameters were investigated: residual gas atmosphere, pulsed action modes, characteristics of STM needle, materials of multilayer structures. The tip formation mechanism is discussed.
{"title":"Tip emitter structures fabricated with using the scanning tunneling microscope","authors":"S. I. Shkuratov, I. Dorofeev, D.I. Volgunov, S. N. Shilimanov","doi":"10.1109/IVMC.1996.601921","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601921","url":null,"abstract":"Summary form only given, as follows. Results are presented of investigations of the fabrication processes of tip emitter structures using the scanning tunneling microscope (STM). Nanostructures were fabricated on the surface of multilayer thin film carbon/Me structures (Me: Cr, Fe, Ni, Mo). The number of layers was varied from 3 to 100. Nanotips were formed as a result of pulsed current action from the STM needle to the substrate: in a selected spot on the surface of the specimen the feedback of the STM servo system is interrupted and a voltage pulse several tens of nanoseconds wide is applied to the tunneling gap. After that using the same needle one can get an STM image of the tip emitter. The possibility is shown of fabricating tip emitter structures consisting of hundreds of nanotips. Factors influencing the nanotip parameters were investigated: residual gas atmosphere, pulsed action modes, characteristics of STM needle, materials of multilayer structures. The tip formation mechanism is discussed.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131145270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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