Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601828
K. Park, J. Moon, S. Chung, Jaehak Jung, B. Ju, M. Oh, W. Milne, M. Han, Jin Jang
We have studied the electron emission characteristics of tetrahedral amorphous carbon (ta-C) films with different nitrogen content. With increasing N content in ta-C, the room temperature conductivity as well as the emission current decreases and then increases, resulting in minima. The Fermi-level shifts toward the conduction band and thus the work function decreases by N doping in ta-C, however the emission currents of doped ta-C films are less than those of undoped ta-C.
{"title":"Field emission properties of ta-C films with nitrogen doping","authors":"K. Park, J. Moon, S. Chung, Jaehak Jung, B. Ju, M. Oh, W. Milne, M. Han, Jin Jang","doi":"10.1109/IVMC.1996.601828","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601828","url":null,"abstract":"We have studied the electron emission characteristics of tetrahedral amorphous carbon (ta-C) films with different nitrogen content. With increasing N content in ta-C, the room temperature conductivity as well as the emission current decreases and then increases, resulting in minima. The Fermi-level shifts toward the conduction band and thus the work function decreases by N doping in ta-C, however the emission currents of doped ta-C films are less than those of undoped ta-C.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132473221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601766
A.T. Loburets, G. Naumovets, M. Paliy, N.B. Senenko, Yu.S. Vedula
Surface diffusion (SD) is a phenomenon of particular importance in vacuum microelectronic devices whose characteristics are highly sensitive to microgeometry of electrodes and to distribution of adsorbed species on their surfaces. In this work we have investigated the correlation between the variation of SD rate of electropositive adsorbates (alkali, alkaline-earth and rare-earth metals) and phase transitions occurring in their overlayers with increasing coverage. Extremely strong phase effects in SD of such adsorbates have been found. Possible mechanisms of SD are discussed.
{"title":"Surface diffusion and phase transitions in electropositive overlayers","authors":"A.T. Loburets, G. Naumovets, M. Paliy, N.B. Senenko, Yu.S. Vedula","doi":"10.1109/IVMC.1996.601766","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601766","url":null,"abstract":"Surface diffusion (SD) is a phenomenon of particular importance in vacuum microelectronic devices whose characteristics are highly sensitive to microgeometry of electrodes and to distribution of adsorbed species on their surfaces. In this work we have investigated the correlation between the variation of SD rate of electropositive adsorbates (alkali, alkaline-earth and rare-earth metals) and phase transitions occurring in their overlayers with increasing coverage. Extremely strong phase effects in SD of such adsorbates have been found. Possible mechanisms of SD are discussed.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"502 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122212137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601794
Qing‐An Huang
Field emission from surface states is modelled and numerically estimated. Field emission current from surface states is dominant at lower fields while field emission current from the conduction band is dominant at higher fields due to insufficient electrons supplied for surface states.
{"title":"Role of surface states in field emission from silicon","authors":"Qing‐An Huang","doi":"10.1109/IVMC.1996.601794","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601794","url":null,"abstract":"Field emission from surface states is modelled and numerically estimated. Field emission current from surface states is dominant at lower fields while field emission current from the conduction band is dominant at higher fields due to insufficient electrons supplied for surface states.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121816927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601906
L. Baskin, G. Fursey, L.A. Shirochin
The researches of field emission from liquid metal surface showed that the process consists of two basic stages. At the first stage the hydrodynamic instability develops on a surface of a conducting liquid and, as a result, the microstructures with a high amplification factor of the external field are formed. At the second stage, under the action of a strong field, the emission processes are initiated.
{"title":"Electron and ion emission from liquid metals","authors":"L. Baskin, G. Fursey, L.A. Shirochin","doi":"10.1109/IVMC.1996.601906","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601906","url":null,"abstract":"The researches of field emission from liquid metal surface showed that the process consists of two basic stages. At the first stage the hydrodynamic instability develops on a surface of a conducting liquid and, as a result, the microstructures with a high amplification factor of the external field are formed. At the second stage, under the action of a strong field, the emission processes are initiated.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124930346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601814
J. Jung, B. Ju, Yun‐Hi Lee, K. Park, Jin Jang, Y. Jung, Chul-Ju Kim, M. Oh
We have improved an emission stability of Mo tips FEA (field emitter array). The effect of DLC (Diamond Like Carbon) films coated by layer-by-layer technique using PECVD on the electron emission characteristics of Mo tips FEA is examined. Turn-on voltage was lowered from 80 V for Mo tips to 65 V for DLC coated Mo tips FEA and maximum emission current was increased from 140 /spl mu/A for Mo tips to 320 /spl mu/A for DLC coated Mo tips FEA. An anode current for DLC coated Mo tips and Mo tips FEA of 0.1 /spl mu/A per emitter are measured at the gate voltage of about 87 V and 107 V, respectively. Add the emission current of DLC coated Mo tips FEA was more stable than that of Mo tips FEA.
{"title":"Emission stability of DLC coated metal-tips FEA","authors":"J. Jung, B. Ju, Yun‐Hi Lee, K. Park, Jin Jang, Y. Jung, Chul-Ju Kim, M. Oh","doi":"10.1109/IVMC.1996.601814","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601814","url":null,"abstract":"We have improved an emission stability of Mo tips FEA (field emitter array). The effect of DLC (Diamond Like Carbon) films coated by layer-by-layer technique using PECVD on the electron emission characteristics of Mo tips FEA is examined. Turn-on voltage was lowered from 80 V for Mo tips to 65 V for DLC coated Mo tips FEA and maximum emission current was increased from 140 /spl mu/A for Mo tips to 320 /spl mu/A for DLC coated Mo tips FEA. An anode current for DLC coated Mo tips and Mo tips FEA of 0.1 /spl mu/A per emitter are measured at the gate voltage of about 87 V and 107 V, respectively. Add the emission current of DLC coated Mo tips FEA was more stable than that of Mo tips FEA.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125620743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601887
J. Yoo, B. Jeon, Sangwoo Kang, J. Lee
The required luminance for information display is near 300cd/cm/sup 2/ for white. The amount of emitted light in phosphor screen depends upon the anode voltage and electron density from field emitter arrays. Field emission displays to date do not use the high accelerating voltage but a great number of cold electrons from field emitter arrays for required brightness. In these situations, coulombic loading on the phosphors should be minimized for a long lifetime. It was found that the introduction of a wide band-gap material to the oxide phosphors was effective for the prevention of accumulation of the electrons on the surface of phosphors.
{"title":"Optical characteristics of phosphor screen in field emission environments","authors":"J. Yoo, B. Jeon, Sangwoo Kang, J. Lee","doi":"10.1109/IVMC.1996.601887","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601887","url":null,"abstract":"The required luminance for information display is near 300cd/cm/sup 2/ for white. The amount of emitted light in phosphor screen depends upon the anode voltage and electron density from field emitter arrays. Field emission displays to date do not use the high accelerating voltage but a great number of cold electrons from field emitter arrays for required brightness. In these situations, coulombic loading on the phosphors should be minimized for a long lifetime. It was found that the introduction of a wide band-gap material to the oxide phosphors was effective for the prevention of accumulation of the electrons on the surface of phosphors.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"216 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113989131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601802
R. Nowicki, H. Busta, J. Pogemiller, A. R. Forouhi, I. Bloomer, W. M. Clift, J. L. Yio, T. Felter
We have studied the physical and electrical properties of Cr-SiOx ("cermet") and SiC films for use as series resistors in field emitter displays (FEDs). The cermet films were RF reactively sputtered from a CrSi/sub 2/ target in an oxygen/argon mixture. For cermet, we find that as-deposited films are amorphous and exhibit high-Mohm-cm resistivity with refractive index values approaching that of silicon nitride, whereas films heat treated at 350/spl deg/C for ca. one hour in air or under vacuum are loosely crystalline and exhibit low-to-mid-10E+4 ohm-cm resistivity and refractive index values approaching that of SiO/sub 2/. The crystallized films exhibit a roughened surface which will generate microdefects in an overlying oxide film. For sputtered SiC, the as-deposited films are amorphous, with resistivity values of high-10E+4 ohm cm. The heat treated SiC films are finely crystalline, with resistivity values of low-to-mid-10E+5 ohm-cm. They also exhibit the desirable near-linear ohmic characteristics.
{"title":"Studies of RF sputtered CrSiOx and SiC as series resistor films in FED displays","authors":"R. Nowicki, H. Busta, J. Pogemiller, A. R. Forouhi, I. Bloomer, W. M. Clift, J. L. Yio, T. Felter","doi":"10.1109/IVMC.1996.601802","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601802","url":null,"abstract":"We have studied the physical and electrical properties of Cr-SiOx (\"cermet\") and SiC films for use as series resistors in field emitter displays (FEDs). The cermet films were RF reactively sputtered from a CrSi/sub 2/ target in an oxygen/argon mixture. For cermet, we find that as-deposited films are amorphous and exhibit high-Mohm-cm resistivity with refractive index values approaching that of silicon nitride, whereas films heat treated at 350/spl deg/C for ca. one hour in air or under vacuum are loosely crystalline and exhibit low-to-mid-10E+4 ohm-cm resistivity and refractive index values approaching that of SiO/sub 2/. The crystallized films exhibit a roughened surface which will generate microdefects in an overlying oxide film. For sputtered SiC, the as-deposited films are amorphous, with resistivity values of high-10E+4 ohm cm. The heat treated SiC films are finely crystalline, with resistivity values of low-to-mid-10E+5 ohm-cm. They also exhibit the desirable near-linear ohmic characteristics.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131140490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601774
Chih-Wen Lu, Chung-Len Lee, J.M. Huang
In this work, a simple but accurate circuit model, which can be incorporated into circuit simulation programs such as SPICE, for field emission triode (FET) is developed. The model is based on the Fowler-Nordheim (F-N) J-E relationship but takes into account the charge distribution on the surface of the tip of the device. A procedure is also developed to extract the parameters of the model.
{"title":"A SPICE simulation model for field emission triode","authors":"Chih-Wen Lu, Chung-Len Lee, J.M. Huang","doi":"10.1109/IVMC.1996.601774","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601774","url":null,"abstract":"In this work, a simple but accurate circuit model, which can be incorporated into circuit simulation programs such as SPICE, for field emission triode (FET) is developed. The model is based on the Fowler-Nordheim (F-N) J-E relationship but takes into account the charge distribution on the surface of the tip of the device. A procedure is also developed to extract the parameters of the model.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131590730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601912
P. Troyan, E. V. Katkova
Cold emitters based on thin film metal-insulator-metal (MIM) structures are of some interest to vacuum microelectronics purposes because of their low response time, ability to work under rough vacuum conditions, low operating voltages and reasonable lifetime. Emission characteristics of MIM structures depend to a large degree on electroforming, the final step in the MIM emitter fabrication sequence. Despite the fact that we studied many features of this process, its mechanism is not yet completely understood and calls for further investigation. This work reports new data on studying a forming process in and electron emission from MIM structures and results on testing those structures in a switching mode.
{"title":"Electroforming and electron emission from a thin film MIM structure","authors":"P. Troyan, E. V. Katkova","doi":"10.1109/IVMC.1996.601912","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601912","url":null,"abstract":"Cold emitters based on thin film metal-insulator-metal (MIM) structures are of some interest to vacuum microelectronics purposes because of their low response time, ability to work under rough vacuum conditions, low operating voltages and reasonable lifetime. Emission characteristics of MIM structures depend to a large degree on electroforming, the final step in the MIM emitter fabrication sequence. Despite the fact that we studied many features of this process, its mechanism is not yet completely understood and calls for further investigation. This work reports new data on studying a forming process in and electron emission from MIM structures and results on testing those structures in a switching mode.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127565341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-07-07DOI: 10.1109/IVMC.1996.601857
W. Choi, B. Ju, S. Jeong, N. Lee, K. Koh, M. Haskard, M. Sung, M. Oh
We have performed silicon-to-silicon anodic bonding using a glass layer deposited by electron beam evaporation. Wafers can be bonded at 135/spl deg/C with an applied voltage of 35 V/sub DC/, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that an evaporated glass layer more than 1 /spl mu/m thick was suitable for anodic bonding. We have also investigated the possibility of an evaporated glass layer as an insulating layer as well as a bonding layer.
{"title":"Anodic bonding technique under low-temperature and low-voltage using evaporated glass","authors":"W. Choi, B. Ju, S. Jeong, N. Lee, K. Koh, M. Haskard, M. Sung, M. Oh","doi":"10.1109/IVMC.1996.601857","DOIUrl":"https://doi.org/10.1109/IVMC.1996.601857","url":null,"abstract":"We have performed silicon-to-silicon anodic bonding using a glass layer deposited by electron beam evaporation. Wafers can be bonded at 135/spl deg/C with an applied voltage of 35 V/sub DC/, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that an evaporated glass layer more than 1 /spl mu/m thick was suitable for anodic bonding. We have also investigated the possibility of an evaporated glass layer as an insulating layer as well as a bonding layer.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133507715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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