Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896411
Runchuan Li, Shasha Ji, Shengya Shen, Panle Li, Xu Wang, Tiantian Xie, Xingjin Zhang, Zongmin Wang
Severe arrhythmia can threaten human life, therefore, the timely detection of arrhythmia is important. In this paper, a clustering method of arrhythmia based on PCA-KNN is proposed. Firstly, P-QRS-T waves are extracted. Then the principal component analysis PCA) algorithm is used to reduce the dimension of high-dimensional heartbeat. Finally, k-nearest neighbor (KNN) method of recognition arrhythmia. Experiments on MIT-BIH arrhythmia database show that compared with most of the most advanced arrhythmia recognition methods, the accuracy of this clustering model is as high as 98.99%.
{"title":"Arrhythmia Multiple Categories Recognition based on PCA-KNN Clustering Model","authors":"Runchuan Li, Shasha Ji, Shengya Shen, Panle Li, Xu Wang, Tiantian Xie, Xingjin Zhang, Zongmin Wang","doi":"10.1109/ISNE.2019.8896411","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896411","url":null,"abstract":"Severe arrhythmia can threaten human life, therefore, the timely detection of arrhythmia is important. In this paper, a clustering method of arrhythmia based on PCA-KNN is proposed. Firstly, P-QRS-T waves are extracted. Then the principal component analysis PCA) algorithm is used to reduce the dimension of high-dimensional heartbeat. Finally, k-nearest neighbor (KNN) method of recognition arrhythmia. Experiments on MIT-BIH arrhythmia database show that compared with most of the most advanced arrhythmia recognition methods, the accuracy of this clustering model is as high as 98.99%.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131470443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896374
Zhiqingg Zhou, Meihua Liu, Xinnan Lin
In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (VON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.
{"title":"High Performance AlGaN/GaN Schottky Barrier Diodes with Floating Gate","authors":"Zhiqingg Zhou, Meihua Liu, Xinnan Lin","doi":"10.1109/ISNE.2019.8896374","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896374","url":null,"abstract":"In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (VON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129806139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896613
Xiao-Lu Feng, Xu Zhang, Jincai Ji
In this work, a theoretical analysis of plasmonic enhancement of Ag particles embedded in CaTiO3 thin-film layer for ZnO structure solar cells is presented. Due to the introduction of Ag particles, the absorption of solar cell is enhanced, owning to the strong surface plasmon absorption of Ag particles and synergistic effect between Ag and CaTiO3. In our analysis, the optimized radius of Ag particles is 80nm. The average absorption efficiency of the optimized nano- structure can achieve 80%, which is 24% higher than that of pure CaTiO3 thin-film layer structure. We believe the proposed Ag/CaTiO3 solar cells structure could be a potential candidate for future industry manufacture with low-cost and simple fabrication process.
{"title":"Study on plasmonic effect of perovskite solar cells based on nanofilm structure","authors":"Xiao-Lu Feng, Xu Zhang, Jincai Ji","doi":"10.1109/ISNE.2019.8896613","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896613","url":null,"abstract":"In this work, a theoretical analysis of plasmonic enhancement of Ag particles embedded in CaTiO3 thin-film layer for ZnO structure solar cells is presented. Due to the introduction of Ag particles, the absorption of solar cell is enhanced, owning to the strong surface plasmon absorption of Ag particles and synergistic effect between Ag and CaTiO3. In our analysis, the optimized radius of Ag particles is 80nm. The average absorption efficiency of the optimized nano- structure can achieve 80%, which is 24% higher than that of pure CaTiO3 thin-film layer structure. We believe the proposed Ag/CaTiO3 solar cells structure could be a potential candidate for future industry manufacture with low-cost and simple fabrication process.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129684090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896576
Yan Ma, Ya Li, Jianning Yao, Bing Chen, Jicai Deng, Xiaonan Yang
Colorectal cancer is one of the most common cancers in China. The occurrence of most colorectal cancer is closely related to colorectal polyps. Colonoscopy is the gold standard for the diagnosis of intestinal lesions. Usually, existing colonoscopy is performed by physicians to determine the location of polyps by observing the results of detection with the naked eye. The detection rate of polyps is also affected by the doctor’s experience, fatigue, detection rate, and other factors, so there is a certain degree of polyp missed detection. Therefore, to improve diagnostic accuracy and reduce the rate of missed diagnosis, the paper proposes an improved_ssd model based on deep learning. The model is extended from the ssd_inception_v2 model, and the inception_v2 basic framework is used to extract features from multiple dimensions and fuse them, which improve the accuracy of polyp location. The test results show that the AP of this method is 94.92%, the accuracy is 96.04%, the sensitivity is 93.67%, and the specificity is 98.36%. This method realizes the accurate localization of polyps in colonoscopy and provides a reference for doctors' diagnosis.
{"title":"Polyp Location in Colonoscopy Based on Deep Learning","authors":"Yan Ma, Ya Li, Jianning Yao, Bing Chen, Jicai Deng, Xiaonan Yang","doi":"10.1109/ISNE.2019.8896576","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896576","url":null,"abstract":"Colorectal cancer is one of the most common cancers in China. The occurrence of most colorectal cancer is closely related to colorectal polyps. Colonoscopy is the gold standard for the diagnosis of intestinal lesions. Usually, existing colonoscopy is performed by physicians to determine the location of polyps by observing the results of detection with the naked eye. The detection rate of polyps is also affected by the doctor’s experience, fatigue, detection rate, and other factors, so there is a certain degree of polyp missed detection. Therefore, to improve diagnostic accuracy and reduce the rate of missed diagnosis, the paper proposes an improved_ssd model based on deep learning. The model is extended from the ssd_inception_v2 model, and the inception_v2 basic framework is used to extract features from multiple dimensions and fuse them, which improve the accuracy of polyp location. The test results show that the AP of this method is 94.92%, the accuracy is 96.04%, the sensitivity is 93.67%, and the specificity is 98.36%. This method realizes the accurate localization of polyps in colonoscopy and provides a reference for doctors' diagnosis.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124945632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/isne.2019.8896662
{"title":"ISNE 2019 TOC","authors":"","doi":"10.1109/isne.2019.8896662","DOIUrl":"https://doi.org/10.1109/isne.2019.8896662","url":null,"abstract":"","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127636101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896429
Zhan Wang, Xiaohong Sun, Zhengshuai Wei
In this paper, we demonstrate a new type of 2D photonic crystal F-shaped channel-drop filter based on double ring resonators with narrow bandwidth and high transmission. The parameters which affect resonant frequency and output bandwidth are investigated. These parameters include refractive index of inner rods and coupling rods as well as radius of the coupling rods. In the two output ports of the second resonator, the output central frequency of frequency band can be transformed flexibly and the transmission of the two output ports can be changed easily by varying the radii of coupling rods and refractive index of inner rods. The F-shaped channel-drop filter can achieve transmittance of 87% and quality factor of 778 at the D output port and get transmittance of 82% and quality factor of 255 at the C output port simultaneously, found by finite difference time domain(FDTD) method.
{"title":"F-shaped Channel-Drop Filter Based On Photonic Crystal Double Ring Resonators","authors":"Zhan Wang, Xiaohong Sun, Zhengshuai Wei","doi":"10.1109/ISNE.2019.8896429","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896429","url":null,"abstract":"In this paper, we demonstrate a new type of 2D photonic crystal F-shaped channel-drop filter based on double ring resonators with narrow bandwidth and high transmission. The parameters which affect resonant frequency and output bandwidth are investigated. These parameters include refractive index of inner rods and coupling rods as well as radius of the coupling rods. In the two output ports of the second resonator, the output central frequency of frequency band can be transformed flexibly and the transmission of the two output ports can be changed easily by varying the radii of coupling rods and refractive index of inner rods. The F-shaped channel-drop filter can achieve transmittance of 87% and quality factor of 778 at the D output port and get transmittance of 82% and quality factor of 255 at the C output port simultaneously, found by finite difference time domain(FDTD) method.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128362628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896425
Sakib Islam, Ibrahim M Abdel Motaleb
Although 3D IC technology can provide very high integration density, they suffer from having hotspots that may reach 1000’s of degrees. To manage this heat, it is necessary to study the dynamics of cooling and thermal behavior of the ICs. In this study, we report on the dynamics of microchannel liquid cooling using water, R22, and liquid nitrogen. The study shows that using diamond cooling blocks ensures normal operating temperature of 60 ˚C or less, using any of the above coolants. Using SiO2 blocks, only liquid nitrogen can provide acceptable operating temperatures. The study shows also that liquid latent energy and inlet velocity play a major role in the cooling dynamics.
{"title":"Investigation of the Dynamics of Liquid Cooling of 3D ICs","authors":"Sakib Islam, Ibrahim M Abdel Motaleb","doi":"10.1109/ISNE.2019.8896425","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896425","url":null,"abstract":"Although 3D IC technology can provide very high integration density, they suffer from having hotspots that may reach 1000’s of degrees. To manage this heat, it is necessary to study the dynamics of cooling and thermal behavior of the ICs. In this study, we report on the dynamics of microchannel liquid cooling using water, R22, and liquid nitrogen. The study shows that using diamond cooling blocks ensures normal operating temperature of 60 ˚C or less, using any of the above coolants. Using SiO2 blocks, only liquid nitrogen can provide acceptable operating temperatures. The study shows also that liquid latent energy and inlet velocity play a major role in the cooling dynamics.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122778364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mapping technology plus the statistical analysis is a good tool to probe the yield loss of the wafer manufacturing. In this work, the long and short channel devices under the CV measurement with the low and high frequency operation exhibited the interesting performance as the high-k (HK) gate dielectric after the growth of atomic layer deposition (ALD) treated with the post-deposition annealing (PDA) or decoupled plasma nitridation (DPN) process flows. By the way, the electrical performance with drive current, subthreshold swing, gate oxide capacitance and interface state density is also incorporated with the error bar analysis.
{"title":"Nano-node n-type Gate Dielectric Integrity and Uniformity Correlated to Nitridation Process","authors":"Chih-Chieh Chang, Chih-Cheng Lu, Mu-Chun Wang, Heng-Sheng Huang, Shuang-Yuan Chen, Shea-Jue Wang","doi":"10.1109/ISNE.2019.8896626","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896626","url":null,"abstract":"Mapping technology plus the statistical analysis is a good tool to probe the yield loss of the wafer manufacturing. In this work, the long and short channel devices under the CV measurement with the low and high frequency operation exhibited the interesting performance as the high-k (HK) gate dielectric after the growth of atomic layer deposition (ALD) treated with the post-deposition annealing (PDA) or decoupled plasma nitridation (DPN) process flows. By the way, the electrical performance with drive current, subthreshold swing, gate oxide capacitance and interface state density is also incorporated with the error bar analysis.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127008759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896434
Yu Lulu, W. Yuying, C. Jianbing
In this paper, a new quasi-Super Junction Lateral double-diffused-metal-oxide-semiconductor (SJ LDMOS) with step doping P-pillar was proposed. Because the depletion from the source side to the drain side is enhanced in the drift region, the doping concentrations in the P-pillar are decreased reversely to achieve charge balance and optimize the bulk electric field. The breakdown voltage and on-resistance of the new structure are investigated through the simulation, at the same time, the other key parameters were simulated and analyzed. Simulation results show that the trade-off between the breakdown voltage and the on-resistance is significantly improved due to bulk field optimization from the step doping in the P-pillar.
{"title":"Research on Two-dimensional quasi-SJ device with step-doping P-pillar","authors":"Yu Lulu, W. Yuying, C. Jianbing","doi":"10.1109/ISNE.2019.8896434","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896434","url":null,"abstract":"In this paper, a new quasi-Super Junction Lateral double-diffused-metal-oxide-semiconductor (SJ LDMOS) with step doping P-pillar was proposed. Because the depletion from the source side to the drain side is enhanced in the drift region, the doping concentrations in the P-pillar are decreased reversely to achieve charge balance and optimize the bulk electric field. The breakdown voltage and on-resistance of the new structure are investigated through the simulation, at the same time, the other key parameters were simulated and analyzed. Simulation results show that the trade-off between the breakdown voltage and the on-resistance is significantly improved due to bulk field optimization from the step doping in the P-pillar.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124795448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896648
Huiquan Qin, Xia Xiao, Haiyang Qi, T. Kikkawa
Surface acoustic wave (SAW) technology is a new nondestructive and fast on-line testing technology for mechanical properties of interconnect films. The theoretical dispersion curves of SAWs propagating on the film/substrate structure are calculated by the Green’s function and matrix method, assuming that the film surface and interface are smooth. In this paper, the random rough curves of the film surface and interface are simulated by the Monte Carlo method. The dispersion curves considering the surface and interface roughness are calculated by the finite element method. The dispersion curves obtained from ideal SAW model and roughness model are compared. This study indicates that the influence of surface and interface roughness on the determination of mechanical properties for SiO2 film and low-k film by SAW method is small, and it can be ignored.
{"title":"Influence of Roughness on Nondestructive Characterization of Interconnect Film Mechanical Properties by Surface Acoustic Wave","authors":"Huiquan Qin, Xia Xiao, Haiyang Qi, T. Kikkawa","doi":"10.1109/ISNE.2019.8896648","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896648","url":null,"abstract":"Surface acoustic wave (SAW) technology is a new nondestructive and fast on-line testing technology for mechanical properties of interconnect films. The theoretical dispersion curves of SAWs propagating on the film/substrate structure are calculated by the Green’s function and matrix method, assuming that the film surface and interface are smooth. In this paper, the random rough curves of the film surface and interface are simulated by the Monte Carlo method. The dispersion curves considering the surface and interface roughness are calculated by the finite element method. The dispersion curves obtained from ideal SAW model and roughness model are compared. This study indicates that the influence of surface and interface roughness on the determination of mechanical properties for SiO2 film and low-k film by SAW method is small, and it can be ignored.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124863427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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