Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896411
Runchuan Li, Shasha Ji, Shengya Shen, Panle Li, Xu Wang, Tiantian Xie, Xingjin Zhang, Zongmin Wang
Severe arrhythmia can threaten human life, therefore, the timely detection of arrhythmia is important. In this paper, a clustering method of arrhythmia based on PCA-KNN is proposed. Firstly, P-QRS-T waves are extracted. Then the principal component analysis PCA) algorithm is used to reduce the dimension of high-dimensional heartbeat. Finally, k-nearest neighbor (KNN) method of recognition arrhythmia. Experiments on MIT-BIH arrhythmia database show that compared with most of the most advanced arrhythmia recognition methods, the accuracy of this clustering model is as high as 98.99%.
{"title":"Arrhythmia Multiple Categories Recognition based on PCA-KNN Clustering Model","authors":"Runchuan Li, Shasha Ji, Shengya Shen, Panle Li, Xu Wang, Tiantian Xie, Xingjin Zhang, Zongmin Wang","doi":"10.1109/ISNE.2019.8896411","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896411","url":null,"abstract":"Severe arrhythmia can threaten human life, therefore, the timely detection of arrhythmia is important. In this paper, a clustering method of arrhythmia based on PCA-KNN is proposed. Firstly, P-QRS-T waves are extracted. Then the principal component analysis PCA) algorithm is used to reduce the dimension of high-dimensional heartbeat. Finally, k-nearest neighbor (KNN) method of recognition arrhythmia. Experiments on MIT-BIH arrhythmia database show that compared with most of the most advanced arrhythmia recognition methods, the accuracy of this clustering model is as high as 98.99%.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131470443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896613
Xiao-Lu Feng, Xu Zhang, Jincai Ji
In this work, a theoretical analysis of plasmonic enhancement of Ag particles embedded in CaTiO3 thin-film layer for ZnO structure solar cells is presented. Due to the introduction of Ag particles, the absorption of solar cell is enhanced, owning to the strong surface plasmon absorption of Ag particles and synergistic effect between Ag and CaTiO3. In our analysis, the optimized radius of Ag particles is 80nm. The average absorption efficiency of the optimized nano- structure can achieve 80%, which is 24% higher than that of pure CaTiO3 thin-film layer structure. We believe the proposed Ag/CaTiO3 solar cells structure could be a potential candidate for future industry manufacture with low-cost and simple fabrication process.
{"title":"Study on plasmonic effect of perovskite solar cells based on nanofilm structure","authors":"Xiao-Lu Feng, Xu Zhang, Jincai Ji","doi":"10.1109/ISNE.2019.8896613","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896613","url":null,"abstract":"In this work, a theoretical analysis of plasmonic enhancement of Ag particles embedded in CaTiO3 thin-film layer for ZnO structure solar cells is presented. Due to the introduction of Ag particles, the absorption of solar cell is enhanced, owning to the strong surface plasmon absorption of Ag particles and synergistic effect between Ag and CaTiO3. In our analysis, the optimized radius of Ag particles is 80nm. The average absorption efficiency of the optimized nano- structure can achieve 80%, which is 24% higher than that of pure CaTiO3 thin-film layer structure. We believe the proposed Ag/CaTiO3 solar cells structure could be a potential candidate for future industry manufacture with low-cost and simple fabrication process.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129684090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896374
Zhiqingg Zhou, Meihua Liu, Xinnan Lin
In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (VON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.
{"title":"High Performance AlGaN/GaN Schottky Barrier Diodes with Floating Gate","authors":"Zhiqingg Zhou, Meihua Liu, Xinnan Lin","doi":"10.1109/ISNE.2019.8896374","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896374","url":null,"abstract":"In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (VON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129806139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896397
Zeheng Wang, Shengji Wang, Yuanzhe Yao
In this letter, a high-performance electrically adjust-able current regulator is proposed on the LED-compatible AlGaN/GaN platform. The regulator features an electrical controlled gate and an integrated sensor, which could effectively feedback the cathode potential into the channel near the gate. Therefore, a large adjustable range of current regulating, more than 300 mA/mm, is achieved with a maximum ripple of 34.4 mA/mm. Compared with the conventional devices that just own sensor or p-GaN gate, the proposed regulator exhibits reasonable operation point and low current ripple in addition to the large-range electrically adjustable functionality. These features render the proposed regulator's notable potential in commercialization of high-density integrated LED components, charging stations and so on.
{"title":"A LED-Compatible Current Regulator with Integrated Electrically Adjustable Sensor","authors":"Zeheng Wang, Shengji Wang, Yuanzhe Yao","doi":"10.1109/ISNE.2019.8896397","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896397","url":null,"abstract":"In this letter, a high-performance electrically adjust-able current regulator is proposed on the LED-compatible AlGaN/GaN platform. The regulator features an electrical controlled gate and an integrated sensor, which could effectively feedback the cathode potential into the channel near the gate. Therefore, a large adjustable range of current regulating, more than 300 mA/mm, is achieved with a maximum ripple of 34.4 mA/mm. Compared with the conventional devices that just own sensor or p-GaN gate, the proposed regulator exhibits reasonable operation point and low current ripple in addition to the large-range electrically adjustable functionality. These features render the proposed regulator's notable potential in commercialization of high-density integrated LED components, charging stations and so on.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123790676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896434
Yu Lulu, W. Yuying, C. Jianbing
In this paper, a new quasi-Super Junction Lateral double-diffused-metal-oxide-semiconductor (SJ LDMOS) with step doping P-pillar was proposed. Because the depletion from the source side to the drain side is enhanced in the drift region, the doping concentrations in the P-pillar are decreased reversely to achieve charge balance and optimize the bulk electric field. The breakdown voltage and on-resistance of the new structure are investigated through the simulation, at the same time, the other key parameters were simulated and analyzed. Simulation results show that the trade-off between the breakdown voltage and the on-resistance is significantly improved due to bulk field optimization from the step doping in the P-pillar.
{"title":"Research on Two-dimensional quasi-SJ device with step-doping P-pillar","authors":"Yu Lulu, W. Yuying, C. Jianbing","doi":"10.1109/ISNE.2019.8896434","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896434","url":null,"abstract":"In this paper, a new quasi-Super Junction Lateral double-diffused-metal-oxide-semiconductor (SJ LDMOS) with step doping P-pillar was proposed. Because the depletion from the source side to the drain side is enhanced in the drift region, the doping concentrations in the P-pillar are decreased reversely to achieve charge balance and optimize the bulk electric field. The breakdown voltage and on-resistance of the new structure are investigated through the simulation, at the same time, the other key parameters were simulated and analyzed. Simulation results show that the trade-off between the breakdown voltage and the on-resistance is significantly improved due to bulk field optimization from the step doping in the P-pillar.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124795448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896648
Huiquan Qin, Xia Xiao, Haiyang Qi, T. Kikkawa
Surface acoustic wave (SAW) technology is a new nondestructive and fast on-line testing technology for mechanical properties of interconnect films. The theoretical dispersion curves of SAWs propagating on the film/substrate structure are calculated by the Green’s function and matrix method, assuming that the film surface and interface are smooth. In this paper, the random rough curves of the film surface and interface are simulated by the Monte Carlo method. The dispersion curves considering the surface and interface roughness are calculated by the finite element method. The dispersion curves obtained from ideal SAW model and roughness model are compared. This study indicates that the influence of surface and interface roughness on the determination of mechanical properties for SiO2 film and low-k film by SAW method is small, and it can be ignored.
{"title":"Influence of Roughness on Nondestructive Characterization of Interconnect Film Mechanical Properties by Surface Acoustic Wave","authors":"Huiquan Qin, Xia Xiao, Haiyang Qi, T. Kikkawa","doi":"10.1109/ISNE.2019.8896648","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896648","url":null,"abstract":"Surface acoustic wave (SAW) technology is a new nondestructive and fast on-line testing technology for mechanical properties of interconnect films. The theoretical dispersion curves of SAWs propagating on the film/substrate structure are calculated by the Green’s function and matrix method, assuming that the film surface and interface are smooth. In this paper, the random rough curves of the film surface and interface are simulated by the Monte Carlo method. The dispersion curves considering the surface and interface roughness are calculated by the finite element method. The dispersion curves obtained from ideal SAW model and roughness model are compared. This study indicates that the influence of surface and interface roughness on the determination of mechanical properties for SiO2 film and low-k film by SAW method is small, and it can be ignored.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124863427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mapping technology plus the statistical analysis is a good tool to probe the yield loss of the wafer manufacturing. In this work, the long and short channel devices under the CV measurement with the low and high frequency operation exhibited the interesting performance as the high-k (HK) gate dielectric after the growth of atomic layer deposition (ALD) treated with the post-deposition annealing (PDA) or decoupled plasma nitridation (DPN) process flows. By the way, the electrical performance with drive current, subthreshold swing, gate oxide capacitance and interface state density is also incorporated with the error bar analysis.
{"title":"Nano-node n-type Gate Dielectric Integrity and Uniformity Correlated to Nitridation Process","authors":"Chih-Chieh Chang, Chih-Cheng Lu, Mu-Chun Wang, Heng-Sheng Huang, Shuang-Yuan Chen, Shea-Jue Wang","doi":"10.1109/ISNE.2019.8896626","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896626","url":null,"abstract":"Mapping technology plus the statistical analysis is a good tool to probe the yield loss of the wafer manufacturing. In this work, the long and short channel devices under the CV measurement with the low and high frequency operation exhibited the interesting performance as the high-k (HK) gate dielectric after the growth of atomic layer deposition (ALD) treated with the post-deposition annealing (PDA) or decoupled plasma nitridation (DPN) process flows. By the way, the electrical performance with drive current, subthreshold swing, gate oxide capacitance and interface state density is also incorporated with the error bar analysis.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127008759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896530
T. Gao, Hongtao Shi, Zhongnan Jiang, Shiyu Du, Shuli Jia
Neural network attracts more and more attention in many research fields. However, neural network prediction is scarce in determining the hidden layer. In this paper an algorithm for rapidly discovering hidden layer nodes in neural networks is proposed. Establish a neural network to predict future wind power. Weather forecast information is used as an input data set for neural networks. Then two test sites in the hidden layer are identified by traditional methods. The fitting degree of the two test points is compared through the fitting judgment. BP NNW is founded base on the weather-report data, and the prediction of future wind power is finally completed
{"title":"An Optimization Algorithm Based On Fitting and Center Approximation Principle For Wind Power Prediction","authors":"T. Gao, Hongtao Shi, Zhongnan Jiang, Shiyu Du, Shuli Jia","doi":"10.1109/ISNE.2019.8896530","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896530","url":null,"abstract":"Neural network attracts more and more attention in many research fields. However, neural network prediction is scarce in determining the hidden layer. In this paper an algorithm for rapidly discovering hidden layer nodes in neural networks is proposed. Establish a neural network to predict future wind power. Weather forecast information is used as an input data set for neural networks. Then two test sites in the hidden layer are identified by traditional methods. The fitting degree of the two test points is compared through the fitting judgment. BP NNW is founded base on the weather-report data, and the prediction of future wind power is finally completed","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116152045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896549
Yi Liang, Dedong Han, Wen Yu, Junchen Dong, Huijin Li, Yi Wang
Fully transparent indium gallium zinc oxide thin film transistors (IGZO TFTs) on glass substrate were fabricated by radio frequency magnetron sputtering at room temperature. The influence of oxygen plasma treatment technology on the characteristics of IGZO TFTs were analyzed. Before growing the source/drain electrodes, different power of oxygen plasma were used to treat the surface of the source/drain region. The experiment results suggest that the plasma treatment can improve the performance of device. Compared with the control group, the TFTs with O2 plasma treatment for 10 seconds and power of 150W show a better performance. The Ion/Ioff ratio was increased by an order of magnitude from 2.67×104 to 2.1×105, and the saturation mobility (μsat) was doubled from 0.54 cm2 V-1 s-1 to 1.1cm2 V-1 s-1. The sub-threshold swing (SS) is 0.42V/dec, and Ion/Ioff ratio is 2.1×105.
{"title":"Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors","authors":"Yi Liang, Dedong Han, Wen Yu, Junchen Dong, Huijin Li, Yi Wang","doi":"10.1109/ISNE.2019.8896549","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896549","url":null,"abstract":"Fully transparent indium gallium zinc oxide thin film transistors (IGZO TFTs) on glass substrate were fabricated by radio frequency magnetron sputtering at room temperature. The influence of oxygen plasma treatment technology on the characteristics of IGZO TFTs were analyzed. Before growing the source/drain electrodes, different power of oxygen plasma were used to treat the surface of the source/drain region. The experiment results suggest that the plasma treatment can improve the performance of device. Compared with the control group, the TFTs with O2 plasma treatment for 10 seconds and power of 150W show a better performance. The Ion/Ioff ratio was increased by an order of magnitude from 2.67×104 to 2.1×105, and the saturation mobility (μsat) was doubled from 0.54 cm2 V-1 s-1 to 1.1cm2 V-1 s-1. The sub-threshold swing (SS) is 0.42V/dec, and Ion/Ioff ratio is 2.1×105.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116483154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-10-01DOI: 10.1109/ISNE.2019.8896429
Zhan Wang, Xiaohong Sun, Zhengshuai Wei
In this paper, we demonstrate a new type of 2D photonic crystal F-shaped channel-drop filter based on double ring resonators with narrow bandwidth and high transmission. The parameters which affect resonant frequency and output bandwidth are investigated. These parameters include refractive index of inner rods and coupling rods as well as radius of the coupling rods. In the two output ports of the second resonator, the output central frequency of frequency band can be transformed flexibly and the transmission of the two output ports can be changed easily by varying the radii of coupling rods and refractive index of inner rods. The F-shaped channel-drop filter can achieve transmittance of 87% and quality factor of 778 at the D output port and get transmittance of 82% and quality factor of 255 at the C output port simultaneously, found by finite difference time domain(FDTD) method.
{"title":"F-shaped Channel-Drop Filter Based On Photonic Crystal Double Ring Resonators","authors":"Zhan Wang, Xiaohong Sun, Zhengshuai Wei","doi":"10.1109/ISNE.2019.8896429","DOIUrl":"https://doi.org/10.1109/ISNE.2019.8896429","url":null,"abstract":"In this paper, we demonstrate a new type of 2D photonic crystal F-shaped channel-drop filter based on double ring resonators with narrow bandwidth and high transmission. The parameters which affect resonant frequency and output bandwidth are investigated. These parameters include refractive index of inner rods and coupling rods as well as radius of the coupling rods. In the two output ports of the second resonator, the output central frequency of frequency band can be transformed flexibly and the transmission of the two output ports can be changed easily by varying the radii of coupling rods and refractive index of inner rods. The F-shaped channel-drop filter can achieve transmittance of 87% and quality factor of 778 at the D output port and get transmittance of 82% and quality factor of 255 at the C output port simultaneously, found by finite difference time domain(FDTD) method.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128362628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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