Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66060
E. I. Cole
A scanning electron microscopy imaging technique to examine the voltage level of conductors on passivated CMOS integrated circuits is discussed. Biased resistive contrast imaging uses a modified resistive contrast imaging system to acquire image data on powered circuits. The image is generated by monitoring small fluctuations in the power supply current of an integrated circuit as an electron beam is scanned over the circuit surface. The images resemble voltage contrast data from circuits with the passivation removed and the surface topography subtracted. Nondestructive applications of this imaging method to functional and failed integrated circuits are described. Possible irradiation effects and methods to minimize them are also discussed.<>
{"title":"A new technique for imaging the logic state of passivated conductors: biased resistive contrast imaging (CMOS devices)","authors":"E. I. Cole","doi":"10.1109/RELPHY.1990.66060","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66060","url":null,"abstract":"A scanning electron microscopy imaging technique to examine the voltage level of conductors on passivated CMOS integrated circuits is discussed. Biased resistive contrast imaging uses a modified resistive contrast imaging system to acquire image data on powered circuits. The image is generated by monitoring small fluctuations in the power supply current of an integrated circuit as an electron beam is scanned over the circuit surface. The images resemble voltage contrast data from circuits with the passivation removed and the surface topography subtracted. Nondestructive applications of this imaging method to functional and failed integrated circuits are described. Possible irradiation effects and methods to minimize them are also discussed.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114873815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66092
R. Moazzami, C. Hu, W. Shepherd
The viability of lead zirconate titanate (PZT) films as a storage dielectric for DRAM applications is discussed. 4000 AA PZT films with an effective SiO/sub 2/ thickness less than 17 AA were prepared by sol-gel deposition. The films exhibited ohmic behavior at low fields and exponential field dependence at high fields. The conduction characteristics can be modeled accurately using expressions derived for ionic conductivity. At the same effective SiO/sub 2/ field, the leakage and time-dependent dielectric breakdown (TDDB) characteristics are superior to other dielectric structures. However, lifetime extrapolations to worst-case operating conditions show that TDDB may be a very serious limitation for DRAM applications. Optimization of material properties of PZT films, especially the TDDB lifetime, is necessary for reliable DRAM operation.<>
讨论了锆钛酸铅(PZT)薄膜作为DRAM存储介质的可行性。采用溶胶-凝胶沉积法制备了有效SiO/ sub2 /厚度小于17 AA的4000 AA PZT薄膜。薄膜在低场表现出欧姆特性，在高场表现出指数场依赖性。利用离子电导率的表达式可以精确地模拟导电特性。在相同的有效SiO/sub /场下，泄漏和随时间变化的介质击穿(TDDB)特性优于其他介质结构。然而，对最坏操作条件的寿命推断表明，TDDB可能是DRAM应用的一个非常严重的限制。PZT薄膜材料性能的优化，特别是TDDB寿命的优化，是保证DRAM可靠运行的必要条件。
{"title":"Electrical conduction and breakdown in sol-gel derived PZT thin films","authors":"R. Moazzami, C. Hu, W. Shepherd","doi":"10.1109/RELPHY.1990.66092","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66092","url":null,"abstract":"The viability of lead zirconate titanate (PZT) films as a storage dielectric for DRAM applications is discussed. 4000 AA PZT films with an effective SiO/sub 2/ thickness less than 17 AA were prepared by sol-gel deposition. The films exhibited ohmic behavior at low fields and exponential field dependence at high fields. The conduction characteristics can be modeled accurately using expressions derived for ionic conductivity. At the same effective SiO/sub 2/ field, the leakage and time-dependent dielectric breakdown (TDDB) characteristics are superior to other dielectric structures. However, lifetime extrapolations to worst-case operating conditions show that TDDB may be a very serious limitation for DRAM applications. Optimization of material properties of PZT films, especially the TDDB lifetime, is necessary for reliable DRAM operation.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124711963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66084
S. Chiang, R. Wang, J. Chen, K. Hayes, J. Mccollum, E. Hamdy, C. Hu
Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the 1/E field acceleration model.<>
{"title":"Oxide-nitride-oxide antifuse reliability","authors":"S. Chiang, R. Wang, J. Chen, K. Hayes, J. Mccollum, E. Hamdy, C. Hu","doi":"10.1109/RELPHY.1990.66084","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66084","url":null,"abstract":"Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the 1/E field acceleration model.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123190225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66062
D. Hannaman, N. Zamani, J. Dhiman, M. Buehler
In accelerated life testing the operating life of a device is determined by extrapolation from the failure data at a set of stress points. A methodology for selecting an optimal set of stress points given a constraint in available test time is discussed. The approach is based on linearizing the failure equation and applying multiple linear regression to obtain the optimal stress points. Specific application is made to Black's model (1982) of electromigration.<>
{"title":"Error analysis for optimal design of accelerated tests (electromigration)","authors":"D. Hannaman, N. Zamani, J. Dhiman, M. Buehler","doi":"10.1109/RELPHY.1990.66062","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66062","url":null,"abstract":"In accelerated life testing the operating life of a device is determined by extrapolation from the failure data at a set of stress points. A methodology for selecting an optimal set of stress points given a constraint in available test time is discussed. The approach is based on linearizing the failure equation and applying multiple linear regression to obtain the optimal stress points. Specific application is made to Black's model (1982) of electromigration.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116643813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RELPHY.1990.66070
J. Towner
Electromigration lifetests performed on a variety of Al alloy films to study the form of the failure distribution are discussed. Sample sizes ranged from 35 to 120, allowing exploration near the 1% failure level. Results show that the lognormal rather than the logarithmic extreme value distribution holds where the grain size is smaller than the linewidth. Where the grain exceeds the linewidth, however, either distribution can be used to represent the data.<>
{"title":"Are electromigration failures lognormally distributed?","authors":"J. Towner","doi":"10.1109/RELPHY.1990.66070","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66070","url":null,"abstract":"Electromigration lifetests performed on a variety of Al alloy films to study the form of the failure distribution are discussed. Sample sizes ranged from 35 to 120, allowing exploration near the 1% failure level. Results show that the lognormal rather than the logarithmic extreme value distribution holds where the grain size is smaller than the linewidth. Where the grain exceeds the linewidth, however, either distribution can be used to represent the data.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132091953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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