Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66081
D. Burnett, C. Hu
A study of bipolar degradation over a range of stress and measurement conditions is presented. It is shown that the excess base current, Delta I/sub B/, varies in a power-law manner with J/sub C/, I/sub R/, and t. The I/sub R/ dependence results from a significant nonlocal effect in electron temperature that occurs at the periphery of the emitter due to the narrow depletion width. A quasistatic model of the degradation, suitable for SPICE circuit simulation, is presented and used to simulate the degradation of a BiCMOS inverter and differential pair circuit. The simulation of an advanced BiCMOS process indicates a degradation in the low-to-high propagation delay of 7% and 300 K and 3% at 110 K after 10 years of operation with C/sub L/=2 pf and V/sub CC/=5.5 V. For emitter-coupled pair circuits, the base current degradation can create a voltage drop across the base resistance, resulting in an additional offset voltage component. With the modeling methodology presented, one can predict the effect of varying the emitter-extrinsic-base junction doping profile on circuit reliability.<>
{"title":"Hot-carrier reliability of bipolar transistors","authors":"D. Burnett, C. Hu","doi":"10.1109/RELPHY.1990.66081","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66081","url":null,"abstract":"A study of bipolar degradation over a range of stress and measurement conditions is presented. It is shown that the excess base current, Delta I/sub B/, varies in a power-law manner with J/sub C/, I/sub R/, and t. The I/sub R/ dependence results from a significant nonlocal effect in electron temperature that occurs at the periphery of the emitter due to the narrow depletion width. A quasistatic model of the degradation, suitable for SPICE circuit simulation, is presented and used to simulate the degradation of a BiCMOS inverter and differential pair circuit. The simulation of an advanced BiCMOS process indicates a degradation in the low-to-high propagation delay of 7% and 300 K and 3% at 110 K after 10 years of operation with C/sub L/=2 pf and V/sub CC/=5.5 V. For emitter-coupled pair circuits, the base current degradation can create a voltage drop across the base resistance, resulting in an additional offset voltage component. With the modeling methodology presented, one can predict the effect of varying the emitter-extrinsic-base junction doping profile on circuit reliability.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125523073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66079
T. Miller, S. Illyés, D. Baglee
Program disturb or V/sub t/ shifts due to bit line stress for EPROMs continues to be a major reliability issue among semiconductor manufacturers, but very little information exists on these mechanisms. It is shown that program disturb is a defect mechanism, and the effects of voltage and temperature are studied. The impact on programming and extended read cycles is also evaluated.<>
{"title":"Charge loss associated with program disturb stresses in EPROMs","authors":"T. Miller, S. Illyés, D. Baglee","doi":"10.1109/RELPHY.1990.66079","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66079","url":null,"abstract":"Program disturb or V/sub t/ shifts due to bit line stress for EPROMs continues to be a major reliability issue among semiconductor manufacturers, but very little information exists on these mechanisms. It is shown that program disturb is a defect mechanism, and the effects of voltage and temperature are studied. The impact on programming and extended read cycles is also evaluated.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122510012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66095
A. Gallo
Degradation of the intermetallic region of the gold wire-aluminium bonding pad interface of several types of IC devices in plastic packages is accelerated by moisture at relatively low temperatures (121-135 degrees C), leading to near-complete loss of strength after 300-400 h of autoclave testing. Measurement of bonding strength as a function of steam-autoclave time in a designed experiment shows that one common component of semiconductor molding compounds (Sb/sub 2/O/sub 3/) is the overriding factor in causing ball-lift. In support of this conclusion, a variety of brominated flame retardants, including those that claimed to be more stable to Br release, were tested in similar formulations and all were found to give ball-bond degradation, to about the same degree, when Sb/sub 2/O/sub 3/ was present. Cross sections of the bonds that show the Sb/sub 2/O/sub 3/-induced degradation and elemental analysis of the pulled ball-bonds suggest that the degradative reaction starts at the interface of the gold-rich intermetallic and the gold ball. Antimony trioxide appears to be associated with the Al portion of the Au-Al ball-bond intermetallics, and to be participating in the reactions or affecting the reactivity of Al in a high-moisture environment. These results contrast with several previous reports that Sb/sub 2/O/sub 3/ improves wire bond reliability in a dry environment.<>
{"title":"Effect of mold compound components on moisture-induced degradation of gold-aluminium bonds in epoxy encapsulated devices","authors":"A. Gallo","doi":"10.1109/RELPHY.1990.66095","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66095","url":null,"abstract":"Degradation of the intermetallic region of the gold wire-aluminium bonding pad interface of several types of IC devices in plastic packages is accelerated by moisture at relatively low temperatures (121-135 degrees C), leading to near-complete loss of strength after 300-400 h of autoclave testing. Measurement of bonding strength as a function of steam-autoclave time in a designed experiment shows that one common component of semiconductor molding compounds (Sb/sub 2/O/sub 3/) is the overriding factor in causing ball-lift. In support of this conclusion, a variety of brominated flame retardants, including those that claimed to be more stable to Br release, were tested in similar formulations and all were found to give ball-bond degradation, to about the same degree, when Sb/sub 2/O/sub 3/ was present. Cross sections of the bonds that show the Sb/sub 2/O/sub 3/-induced degradation and elemental analysis of the pulled ball-bonds suggest that the degradative reaction starts at the interface of the gold-rich intermetallic and the gold ball. Antimony trioxide appears to be associated with the Al portion of the Au-Al ball-bond intermetallics, and to be participating in the reactions or affecting the reactivity of Al in a high-moisture environment. These results contrast with several previous reports that Sb/sub 2/O/sub 3/ improves wire bond reliability in a dry environment.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132004666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66102
H. Haddad, L. Forbes, P. Burke, W. Richling
The injection of hot electrons in submicrometer MOS devices constitutes a serious limitation on the application and reliability of these devices. It is shown that carbon doping can significantly reduce or delay this ageing process and the shifts of threshold voltages of MOS transistors with time. Carbon doping has been achieved by both using carbon-doped substrates and by ion implantation of carbon.<>
{"title":"Carbon doping effects on hot electron trapping","authors":"H. Haddad, L. Forbes, P. Burke, W. Richling","doi":"10.1109/RELPHY.1990.66102","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66102","url":null,"abstract":"The injection of hot electrons in submicrometer MOS devices constitutes a serious limitation on the application and reliability of these devices. It is shown that carbon doping can significantly reduce or delay this ageing process and the shifts of threshold voltages of MOS transistors with time. Carbon doping has been achieved by both using carbon-doped substrates and by ion implantation of carbon.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"432 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122872345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66086
H. Kaneko, M. Hasunuma, A. Sawabe, T. Kawanoue, Y. Kohanawa, S. Komatsu, M. Miyauchi
Thermodynamic analysis of stress-induced voiding has indicated that a slit-like void is the origin of metal line open failures. Wedge-shaped voids nucleate initially at specific grain boundaries where
应力诱导空化的热力学分析表明，裂隙型空化是金属线开口破坏的根源。楔形孔洞最初在特定晶界处成核
{"title":"A newly developed model for stress induced slit-like voiding","authors":"H. Kaneko, M. Hasunuma, A. Sawabe, T. Kawanoue, Y. Kohanawa, S. Komatsu, M. Miyauchi","doi":"10.1109/RELPHY.1990.66086","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66086","url":null,"abstract":"Thermodynamic analysis of stress-induced voiding has indicated that a slit-like void is the origin of metal line open failures. Wedge-shaped voids nucleate initially at specific grain boundaries where","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127508603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66073
W. Baerg, K. Wu, P. Davies, G. Dao, D. Fraser
Data that demonstrate the usefulness of RR, the electrical resistance ratio between 298 K and 77 K, for monitoring the equality of Al-Si metal films are presented. A correlation between RR, electromigration median-time-to-fail (MTTF), and median-grain-radius (MGR) of the metal is shown, using examples of N/sub 2/ and H/sub 2/O contaminated films.<>
{"title":"The electrical resistance ratio (RR) as a thin film metal monitor","authors":"W. Baerg, K. Wu, P. Davies, G. Dao, D. Fraser","doi":"10.1109/RELPHY.1990.66073","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66073","url":null,"abstract":"Data that demonstrate the usefulness of RR, the electrical resistance ratio between 298 K and 77 K, for monitoring the equality of Al-Si metal films are presented. A correlation between RR, electromigration median-time-to-fail (MTTF), and median-grain-radius (MGR) of the metal is shown, using examples of N/sub 2/ and H/sub 2/O contaminated films.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125933240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66083
J. van der Pol, J. Koomen
The hot-carrier degradation of static RAMs is discussed. During the stress, an increase of the access times, the minimum operating voltage, and the write times is observed. The latter two can be directly related, even quantitatively, to the degradation of the access transistor of the memory cell. Comparison of product and transistor lifetimes show that their voltage dependence is the same, but that the product lifetime is significantly (about a factor 50) larger. The discrepancy is caused by the small sensitivity of the SRAM to transistor degradation, and by duty cycle effects It is concluded that the product lifetime is severely underestimated if it is straightforwardly derived from static transistor lifetime data only. The true product lifetime should be obtained from stressing the product.<>
{"title":"Relation between thehot carrier lifetime of transistors and CMOS SRAM products","authors":"J. van der Pol, J. Koomen","doi":"10.1109/RELPHY.1990.66083","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66083","url":null,"abstract":"The hot-carrier degradation of static RAMs is discussed. During the stress, an increase of the access times, the minimum operating voltage, and the write times is observed. The latter two can be directly related, even quantitatively, to the degradation of the access transistor of the memory cell. Comparison of product and transistor lifetimes show that their voltage dependence is the same, but that the product lifetime is significantly (about a factor 50) larger. The discrepancy is caused by the small sensitivity of the SRAM to transistor degradation, and by duty cycle effects It is concluded that the product lifetime is severely underestimated if it is straightforwardly derived from static transistor lifetime data only. The true product lifetime should be obtained from stressing the product.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115255033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66064
M. Kimball
An electrochemical probe-sharpening technique with useful microelectronics applications is discussed. This technique was originally designed for scanning tunneling microscope tips. Probe tips produced by the technique are both sharp and strong. In addition, the tip radius is easily set by monitoring current flow during the etch, making it possible to automate the procedure. A circuit for this purpose is given.<>
{"title":"An improved probe sharpening technique (microelectronics failure analysis)","authors":"M. Kimball","doi":"10.1109/RELPHY.1990.66064","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66064","url":null,"abstract":"An electrochemical probe-sharpening technique with useful microelectronics applications is discussed. This technique was originally designed for scanning tunneling microscope tips. Probe tips produced by the technique are both sharp and strong. In addition, the tip radius is easily set by monitoring current flow during the etch, making it possible to automate the procedure. A circuit for this purpose is given.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"289 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121315883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66096
C. Dunn, J. McPherson
Low-cycle fatigue data for four common aluminium failure mechanisms in VLSI applications are presented; fractured intermetallic bond failure, chip-out bond failure, shear-stress-induced metal movement and passivation cracking and tensile-stress-induced metal notching and voiding (stress migration). Except for the tensile-stress-induced notching and voiding, uniform acceleration exists when commonly used accelerated temperature cycling ranges are compared: 0 degrees C/125 degrees C, -40 degrees C/85 degrees C, -40 degrees C/140 degrees C, and -65 degrees C/150 degrees C. Tensile-stress induced metal notching and voiding is not uniformly accelerated by temperature cycling; it is accelerated more effectively by simple elevated temperature storage. A temperature-cycling acceleration factor model, based on the Coffin-Manson law, is presented. The problem of using only the temperature cycling range when calculating the acceleration factor is highlighted.<>
{"title":"Temperature-cycling acceleration factors for aluminium metallization failure in VLSI applications","authors":"C. Dunn, J. McPherson","doi":"10.1109/RELPHY.1990.66096","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66096","url":null,"abstract":"Low-cycle fatigue data for four common aluminium failure mechanisms in VLSI applications are presented; fractured intermetallic bond failure, chip-out bond failure, shear-stress-induced metal movement and passivation cracking and tensile-stress-induced metal notching and voiding (stress migration). Except for the tensile-stress-induced notching and voiding, uniform acceleration exists when commonly used accelerated temperature cycling ranges are compared: 0 degrees C/125 degrees C, -40 degrees C/85 degrees C, -40 degrees C/140 degrees C, and -65 degrees C/150 degrees C. Tensile-stress induced metal notching and voiding is not uniformly accelerated by temperature cycling; it is accelerated more effectively by simple elevated temperature storage. A temperature-cycling acceleration factor model, based on the Coffin-Manson law, is presented. The problem of using only the temperature cycling range when calculating the acceleration factor is highlighted.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124713923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66076
S. Mori, Y. Kaneko, N. Arai, Y. Ohshima, H. Araki, K. Narita, E. Sakagami, K. Yoshikawa
The key factors which dominate the leakage current in poly-oxide are reviewed, and intrinsic limitations in thinner poly-oxide to device application are investigated. The ON (oxide-nitride-oxide) structure that overcomes poly-oxide thinning limitations is described. This stacked film exhibits superior electric field strength due to the inherent electron trapping-assisted self-limiting process. UV erase characteristics for EPROM cells with the ONO structure are considered. The scaling-down of the ONO interpoly dielectric, taking into consideration memory cell charge retention capability, is discussed.<>
{"title":"Reliability study of thin inter-poly dielectrics for non-volatile memory application","authors":"S. Mori, Y. Kaneko, N. Arai, Y. Ohshima, H. Araki, K. Narita, E. Sakagami, K. Yoshikawa","doi":"10.1109/RELPHY.1990.66076","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66076","url":null,"abstract":"The key factors which dominate the leakage current in poly-oxide are reviewed, and intrinsic limitations in thinner poly-oxide to device application are investigated. The ON (oxide-nitride-oxide) structure that overcomes poly-oxide thinning limitations is described. This stacked film exhibits superior electric field strength due to the inherent electron trapping-assisted self-limiting process. UV erase characteristics for EPROM cells with the ONO structure are considered. The scaling-down of the ONO interpoly dielectric, taking into consideration memory cell charge retention capability, is discussed.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133835159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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