Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66089
N. Hirashita, I. Aikawa, T. Ajioka, M. Kobayakawa, F. Yokoyama, Y. Sakaya
Enhanced void formation observed for first-level Al-Si lines under a large area of second-level Al-Si lines is discussed. The void formation depended on both the annealing temperature of the second-level metal and cure conditions of spin-on-glass films used for the planarization. Studies of thermal desorption with Fourier transform infrared spectroscopy revealed that the residual Si-OH components in spin-on-glass films provided a significant amount of water outgassing, and that water desorbed through interdielectric films but not through Al-Si films. Pressure-cooking states were produced under the second level Al-Si metal during the metallization anneal. A gaseous pressure mechanism to explain the enhanced void formation is proposed.<>
{"title":"Effects of residual water in spin-on-glass layer on void formation for multilevel interconnections","authors":"N. Hirashita, I. Aikawa, T. Ajioka, M. Kobayakawa, F. Yokoyama, Y. Sakaya","doi":"10.1109/RELPHY.1990.66089","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66089","url":null,"abstract":"Enhanced void formation observed for first-level Al-Si lines under a large area of second-level Al-Si lines is discussed. The void formation depended on both the annealing temperature of the second-level metal and cure conditions of spin-on-glass films used for the planarization. Studies of thermal desorption with Fourier transform infrared spectroscopy revealed that the residual Si-OH components in spin-on-glass films provided a significant amount of water outgassing, and that water desorbed through interdielectric films but not through Al-Si films. Pressure-cooking states were produced under the second level Al-Si metal during the metallization anneal. A gaseous pressure mechanism to explain the enhanced void formation is proposed.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130335898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66068
M. Taniguchi, Y. Amano, T. Nemoto, K. Shinohara
The use of Auger electron spectroscopy (AES) to explore the failure mechanism of high electron mobility transistors (HEMTs) subjected to high temperature storage (HTS) and operating life tests is discussed. Degradation at the early stage of HTS is associated with significant amounts of Ga and As outdiffusion through the ohmic areas. A TiN barrier placed between the AuGe/Ni/Au contact and the Ti/Pt/Au overlay metal is effective in eliminating this degradation and increasing the mean time to failure (MTTF) to >10/sup 8/ hours at 125 degrees C channel temperature.<>
{"title":"Enhanced reliability of HEMT by using a TiN barrier","authors":"M. Taniguchi, Y. Amano, T. Nemoto, K. Shinohara","doi":"10.1109/RELPHY.1990.66068","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66068","url":null,"abstract":"The use of Auger electron spectroscopy (AES) to explore the failure mechanism of high electron mobility transistors (HEMTs) subjected to high temperature storage (HTS) and operating life tests is discussed. Degradation at the early stage of HTS is associated with significant amounts of Ga and As outdiffusion through the ohmic areas. A TiN barrier placed between the AuGe/Ni/Au contact and the Ti/Pt/Au overlay metal is effective in eliminating this degradation and increasing the mean time to failure (MTTF) to >10/sup 8/ hours at 125 degrees C channel temperature.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126867822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66082
J. Kumagai, K. Toita, S. Kaki, Shizuo Sawada
Trap/detrap characteristics of nanometer thick SiO/sub 2//Si/sub 3/N/sub 4/ dual dielectric film and the impact of the detrapping on DRAM cell are investigated. The authors estimated net trapped charge in the film, using a new method. Trap/detrap characteristics are strongly dependent on stress bias. Deterioration of DRAM cell signal voltage due to detrapping was found. The thickness of the film and the plate bias should be optimized by considering not only leakage current through SiO/sub 2//Si/sub 3/N/sub 4/ film but also detrap of trapped charge.<>
{"title":"Reduction of signal voltage of DRAM cell induced by discharge of trapped charges in nano-meter thick dual dielectric film (SiO/sub 2//Si/sub 3/N/sub 4/)","authors":"J. Kumagai, K. Toita, S. Kaki, Shizuo Sawada","doi":"10.1109/RELPHY.1990.66082","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66082","url":null,"abstract":"Trap/detrap characteristics of nanometer thick SiO/sub 2//Si/sub 3/N/sub 4/ dual dielectric film and the impact of the detrapping on DRAM cell are investigated. The authors estimated net trapped charge in the film, using a new method. Trap/detrap characteristics are strongly dependent on stress bias. Deterioration of DRAM cell signal voltage due to detrapping was found. The thickness of the film and the plate bias should be optimized by considering not only leakage current through SiO/sub 2//Si/sub 3/N/sub 4/ film but also detrap of trapped charge.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129365333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66061
F. Vollkommer, H. G. Bohn, K. Robrock, W. Schilling
Internal friction (IF) describes the mechanical energy losses in vibrating samples due to stress-induced movement of defects in solids. Such experiments on thin films provide direct experimental access to the examination of grain boundary diffusion phenomena, which are known to be the main origin of electromigration. It is found that for a series of Al-alloys there exists a correlation between the results from IF experiments and electromigration lifetime tests. Thus IF is suggested as a complementary method to the standard test procedures. The method can be applied to samples prepared from wafers coated in industry production lines. Sample preparation and test requires only a few hours.<>
{"title":"Internal friction: a fast technique for electromigration failure analysis","authors":"F. Vollkommer, H. G. Bohn, K. Robrock, W. Schilling","doi":"10.1109/RELPHY.1990.66061","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66061","url":null,"abstract":"Internal friction (IF) describes the mechanical energy losses in vibrating samples due to stress-induced movement of defects in solids. Such experiments on thin films provide direct experimental access to the examination of grain boundary diffusion phenomena, which are known to be the main origin of electromigration. It is found that for a series of Al-alloys there exists a correlation between the results from IF experiments and electromigration lifetime tests. Thus IF is suggested as a complementary method to the standard test procedures. The method can be applied to samples prepared from wafers coated in industry production lines. Sample preparation and test requires only a few hours.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124081534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66080
B. Fishbein, D. B. Jackson
The performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordhein stress is discussed. The measured performance parameters include threshold voltage, peak transconductance, and saturation-region drain current. For moderate degradation levels (up to 10% decrease in saturation current), the degradation was found to be a universal function to the injected electron charge, independent of the stress voltage for DC stress and independent of the stress waveform for pulsed stress conditions.<>
{"title":"Performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordheim stress","authors":"B. Fishbein, D. B. Jackson","doi":"10.1109/RELPHY.1990.66080","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66080","url":null,"abstract":"The performance degradation of n-channel MOS transistors during DC and pulsed Fowler-Nordhein stress is discussed. The measured performance parameters include threshold voltage, peak transconductance, and saturation-region drain current. For moderate degradation levels (up to 10% decrease in saturation current), the degradation was found to be a universal function to the injected electron charge, independent of the stress voltage for DC stress and independent of the stress waveform for pulsed stress conditions.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"407 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122948608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66072
B. Liew, P. Fang, N. Cheung, C. Hu
A previously developed model for predicting interconnect electromigration time-to-failure under arbitrary current waveforms is shown to be applicable to Al-W intermetallic contacts as well. This model is incorporated in a circuit electromigration reliability simulator which can (1) generate layout advisory for width and length of each interconnect, the safety factor of each contact and via in a circuit to meet user-specified reliability requirements and (2) estimate the overall circuit electromigration failure rate and/or cumulative percent failure.<>
{"title":"Reliability simulator for interconnect and intermetallic contact electromigration","authors":"B. Liew, P. Fang, N. Cheung, C. Hu","doi":"10.1109/RELPHY.1990.66072","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66072","url":null,"abstract":"A previously developed model for predicting interconnect electromigration time-to-failure under arbitrary current waveforms is shown to be applicable to Al-W intermetallic contacts as well. This model is incorporated in a circuit electromigration reliability simulator which can (1) generate layout advisory for width and length of each interconnect, the safety factor of each contact and via in a circuit to meet user-specified reliability requirements and (2) estimate the overall circuit electromigration failure rate and/or cumulative percent failure.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130517309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66058
C. R. Crowell, C. Shih, V. Tyree
Standard wafer-level electromigration acceleration test (SWEAT) structures show a critical current for imminent thermal runaway for good metal films even within a linear resistance-versus-power relationship. Consideration of heat sinking and lateral thermal conduction along the metal gives a better knowledge of the origin of this critical current. This permits greater speed and stability of control in testing Joule-heated electromigration (SWEAT) structures, as well as improved understanding of the temperature profile associated with a given fractional resistance change during the accelerated life testing.<>
{"title":"Simulation and testing of temperature distribution and resistance versus power for SWEAT and related Joule-heated metal-on-insulator structures","authors":"C. R. Crowell, C. Shih, V. Tyree","doi":"10.1109/RELPHY.1990.66058","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66058","url":null,"abstract":"Standard wafer-level electromigration acceleration test (SWEAT) structures show a critical current for imminent thermal runaway for good metal films even within a linear resistance-versus-power relationship. Consideration of heat sinking and lateral thermal conduction along the metal gives a better knowledge of the origin of this critical current. This permits greater speed and stability of control in testing Joule-heated electromigration (SWEAT) structures, as well as improved understanding of the temperature profile associated with a given fractional resistance change during the accelerated life testing.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124331363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66067
J. Wurfl, J. K. Singh, H. Hartnagel
A systematic investigation of the reliability and the possible degradation mechanisms of Au-LaB/sub 6/ Schottky contacts to GaAs is presented. Due to a relatively large barrier height ( approximately=0.9 eV) LaB/sub 6/ Schottky contacts are particularly interesting for low leakage current device operation, even at elevated temperatures. The high thermal stability enables sophisticated fabrication processes in connection with ion implantation. The dependence of the contact reliability on certain annealing and processing techniques during device fabrication is demonstrated. Accelerated lifetime tests, in combination with electrical measurements and X-ray photoelectron spectroscopy (XPS) sputter profiling, have been performed, indicating that optimized technological parameters yield reliable contacts with good electrical characteristics.<>
{"title":"Reliability aspects of thermally stable LaB/sub 6/-Au Schottky contacts to GaAs","authors":"J. Wurfl, J. K. Singh, H. Hartnagel","doi":"10.1109/RELPHY.1990.66067","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66067","url":null,"abstract":"A systematic investigation of the reliability and the possible degradation mechanisms of Au-LaB/sub 6/ Schottky contacts to GaAs is presented. Due to a relatively large barrier height ( approximately=0.9 eV) LaB/sub 6/ Schottky contacts are particularly interesting for low leakage current device operation, even at elevated temperatures. The high thermal stability enables sophisticated fabrication processes in connection with ion implantation. The dependence of the contact reliability on certain annealing and processing techniques during device fabrication is demonstrated. Accelerated lifetime tests, in combination with electrical measurements and X-ray photoelectron spectroscopy (XPS) sputter profiling, have been performed, indicating that optimized technological parameters yield reliable contacts with good electrical characteristics.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122852754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66088
A. Tanikawa, H. Okabayashi, H. Mori, H. Fujita
An investigation of stress-induced voiding at temperatures 400 to 500 degrees C in passivated Al metallizations (0.5 by 1 mu m wide) with a bamboo grain structure by ultra-high voltage (2 MV) electron microscopy is discussed. Emphasis is placed on the study of nucleation and growth of voids. Conventional and in situ observations of initial stages of voiding indicate that voids start not only at grain boundaries (GBs), but also at passivation/Al interfaces with no GBs. Void growth toward the Al metallization with direction, however, is always associated with GBs. From the observed results it is suggested that dislocation glide as well as GBs may play a role in voiding at the temperature range studied.<>
{"title":"Observation of stress-induced voiding with an ultra-high voltage electron microscope","authors":"A. Tanikawa, H. Okabayashi, H. Mori, H. Fujita","doi":"10.1109/RELPHY.1990.66088","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66088","url":null,"abstract":"An investigation of stress-induced voiding at temperatures 400 to 500 degrees C in passivated Al metallizations (0.5 by 1 mu m wide) with a bamboo grain structure by ultra-high voltage (2 MV) electron microscopy is discussed. Emphasis is placed on the study of nucleation and growth of voids. Conventional and in situ observations of initial stages of voiding indicate that voids start not only at grain boundaries (GBs), but also at passivation/Al interfaces with no GBs. Void growth toward the Al metallization with direction, however, is always associated with GBs. From the observed results it is suggested that dislocation glide as well as GBs may play a role in voiding at the temperature range studied.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"486 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116692621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-03-27DOI: 10.1109/RELPHY.1990.66057
C. A. Martín, J. Ondrusek, J. McPherson
Al alloys, including Al-Si(1%) and Al-Cu(2%), are investigated. The electromigration test results indicate that the rough surface texture of the underlying chemical vapor deposition (CVD)-W layer degrades the electromigration performance of the Al-Si film. The rough CVD-W surface texture had minimal impact on the electromigration performance of the Al-Cu films. A current-density exponent of 2.1-2.2 was found for both types of films. An activation energy for failure was determined to be 0.75 eV and 0.46 eV for the Al-Cu and Al-Si, respectively.<>
{"title":"Electromigration performance of CVD-W/Al-alloy multilayered metallization","authors":"C. A. Martín, J. Ondrusek, J. McPherson","doi":"10.1109/RELPHY.1990.66057","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66057","url":null,"abstract":"Al alloys, including Al-Si(1%) and Al-Cu(2%), are investigated. The electromigration test results indicate that the rough surface texture of the underlying chemical vapor deposition (CVD)-W layer degrades the electromigration performance of the Al-Si film. The rough CVD-W surface texture had minimal impact on the electromigration performance of the Al-Cu films. A current-density exponent of 2.1-2.2 was found for both types of films. An activation energy for failure was determined to be 0.75 eV and 0.46 eV for the Al-Cu and Al-Si, respectively.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128848783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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