Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.563943
S. Wojtczuk, K. Reinhardt
Ultralight 5 /spl mu/m thick PIN GaAs solar cells were bonded to 3 mm coverglass with 1 mm of adhesive to create very high power density cells for use in ultralight aircraft. Cells were first made on a thick GaAs wafer and then bonded to a coverglass. The GaAs wafer was removed by selectively etching through the wafer to a buried etch stop in the cell epilayers. The cell was completed with a final nonalloyed back metal contact to prevent heat damage to the adhesive, as opposed to a high temperature alloyed contact used in a normal thick p-n GaAs cell. Prototype 1/spl times/1 cm cells were measured by microbalance at an average weight of 0.0228 g/cm/sup 2/ with a one-Sun AMO efficiency up to 17.3% at 28 /spl deg/C (V/sub oc/ 1.024 V, J/sub sc/ 29.9 mA/cm/sup 2/, fill factor 77.4%) for a solar cell power density of 1040 W/kg (weight including coverglass, adhesive and cell).
{"title":"High-power density (1040 W/kg) GaAs cells for ultralight aircraft","authors":"S. Wojtczuk, K. Reinhardt","doi":"10.1109/PVSC.1996.563943","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563943","url":null,"abstract":"Ultralight 5 /spl mu/m thick PIN GaAs solar cells were bonded to 3 mm coverglass with 1 mm of adhesive to create very high power density cells for use in ultralight aircraft. Cells were first made on a thick GaAs wafer and then bonded to a coverglass. The GaAs wafer was removed by selectively etching through the wafer to a buried etch stop in the cell epilayers. The cell was completed with a final nonalloyed back metal contact to prevent heat damage to the adhesive, as opposed to a high temperature alloyed contact used in a normal thick p-n GaAs cell. Prototype 1/spl times/1 cm cells were measured by microbalance at an average weight of 0.0228 g/cm/sup 2/ with a one-Sun AMO efficiency up to 17.3% at 28 /spl deg/C (V/sub oc/ 1.024 V, J/sub sc/ 29.9 mA/cm/sup 2/, fill factor 77.4%) for a solar cell power density of 1040 W/kg (weight including coverglass, adhesive and cell).","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115887777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.563985
J. Avery, K. Kimes, P. Custard, L. Fraas, M. Piszczor, M. O'neill
Multijunction GaAs/GaSb solar cells have now been demonstrated in space in a point-focus concentrator module on the PASP Plus flight experiment. The test results on this concentrator module were so impressive that there is now considerable interest in commercializing space concentrator power systems. However, because arched line-focus Fresnel lenses are easier to make than point-focus domed Fresnel lenses and because it is easier to track the Sun using line-focus concentrator modules, JX Crystals has been developing high efficiency line-focus photovoltaic receivers incorporating optical secondaries for radiation resistance. This work is being performed under a NASA SBIR contract with ENTECH as a subcontractor.
{"title":"High efficiency line-focus photovoltaic receivers using optical secondaries for radiation resistance","authors":"J. Avery, K. Kimes, P. Custard, L. Fraas, M. Piszczor, M. O'neill","doi":"10.1109/PVSC.1996.563985","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563985","url":null,"abstract":"Multijunction GaAs/GaSb solar cells have now been demonstrated in space in a point-focus concentrator module on the PASP Plus flight experiment. The test results on this concentrator module were so impressive that there is now considerable interest in commercializing space concentrator power systems. However, because arched line-focus Fresnel lenses are easier to make than point-focus domed Fresnel lenses and because it is easier to track the Sun using line-focus concentrator modules, JX Crystals has been developing high efficiency line-focus photovoltaic receivers incorporating optical secondaries for radiation resistance. This work is being performed under a NASA SBIR contract with ENTECH as a subcontractor.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117189662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.563944
X. Lee, A. Verma, C.Q. Wu, M. Goertemiller, E. Yablonovitch, J. Eldredge, D. Lillington
In this work, the authors describe the fabrication and operating characteristics of GaAs/AlGaAs thin-film solar cells using the epitaxial liftoff (ELO) technique. This technique allows the transfer of these solar cells onto nonabsorbing glass substrates, and makes possible light-trapping operation. The enhanced performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions.
{"title":"Thin film GaAs solar cells on glass substrates by epitaxial liftoff","authors":"X. Lee, A. Verma, C.Q. Wu, M. Goertemiller, E. Yablonovitch, J. Eldredge, D. Lillington","doi":"10.1109/PVSC.1996.563944","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563944","url":null,"abstract":"In this work, the authors describe the fabrication and operating characteristics of GaAs/AlGaAs thin-film solar cells using the epitaxial liftoff (ELO) technique. This technique allows the transfer of these solar cells onto nonabsorbing glass substrates, and makes possible light-trapping operation. The enhanced performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116276777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.563989
C. Hardingham
A nondestructive technique for measuring minority carrier diffusion lengths in GaAs and other single crystal solar cells is described. The technique relies on the measurement of EBIC (electron beam induced current) from a cell. As the primary beam voltage is varied, the penetration depth of the beam changes. Using a Monte-Carlo simulation of the carrier generation produced by the beam, and solving the minority carrier continuity equation, one can model the current collection. Adjusting the diffusion lengths used in the model, to fit the experimental data, one can determine, with good accuracy, diffusion lengths in the actual device. The technique has been applied to as-made and irradiated cells and used to determine material degradation coefficients.
{"title":"A novel, nondestructive, technique using EBIC to determine diffusion lengths in GaAs solar cells","authors":"C. Hardingham","doi":"10.1109/PVSC.1996.563989","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563989","url":null,"abstract":"A nondestructive technique for measuring minority carrier diffusion lengths in GaAs and other single crystal solar cells is described. The technique relies on the measurement of EBIC (electron beam induced current) from a cell. As the primary beam voltage is varied, the penetration depth of the beam changes. Using a Monte-Carlo simulation of the carrier generation produced by the beam, and solving the minority carrier continuity equation, one can model the current collection. Adjusting the diffusion lengths used in the model, to fit the experimental data, one can determine, with good accuracy, diffusion lengths in the actual device. The technique has been applied to as-made and irradiated cells and used to determine material degradation coefficients.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"29 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120811822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564251
M. Contreras, H. Wiesner, D. Niles, K. Ramanathan, R. Matson, J. Tuttle, J. Keane, R. Noufi
Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In/sub 1-x/Ga)/sub 3/Se/sub 5/ (00.3) is due to a relatively inferior character-both structural and electrical-at the very chalcopyrite/defect chalcopyrite interface. We demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.
{"title":"Defect chalcopyrite Cu(In/sub 1-x/Ga/sub x/)/sub 3/Se/sub 5/ materials and high Ga-content Cu(In,Ga)Se/sub 2/-based solar cells","authors":"M. Contreras, H. Wiesner, D. Niles, K. Ramanathan, R. Matson, J. Tuttle, J. Keane, R. Noufi","doi":"10.1109/PVSC.1996.564251","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564251","url":null,"abstract":"Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In/sub 1-x/Ga)/sub 3/Se/sub 5/ (0<x<1) materials in polycrystalline thin-film form are reported. Also, an energy band alignment between such materials and CdS has been calculated from X-ray photoelectron spectroscopy data. A comparison of some properties against published data on similarly prepared chalcopyrite CuIn/sub 1-x/Ga/sub x/Se/sub 2/ absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, we postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x>0.3) is due to a relatively inferior character-both structural and electrical-at the very chalcopyrite/defect chalcopyrite interface. We demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124418223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564344
E. Henderson, J. Kalejs
The successful commercialization of the PV industry will be a direct function of the effective management of the total cost of its delivered products. A central indicator of this success is a firm's capability to attain and preserve a productivity advantage over its competitors in the market of choice. The interdependency of technical know-how and success in the business climate is measurable along multiple dimensions. Arguably among these indicators are issues related to technical intensity, the willingness and ability to deploy significant technological changes, and certainly sustainable market participation. Several dozen new silicon wafer production technologies have been introduced and taken to various levels of maturity over the past two decades. Here, the authors trace the development of edge-defined film-fed growth (EFG) technology from a fledgling R&D phase to commercialization in this paper within the context of a conventional experience curve for EFG technology.
{"title":"The road to commercialization in the PV industry: a case study of EFG technology","authors":"E. Henderson, J. Kalejs","doi":"10.1109/PVSC.1996.564344","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564344","url":null,"abstract":"The successful commercialization of the PV industry will be a direct function of the effective management of the total cost of its delivered products. A central indicator of this success is a firm's capability to attain and preserve a productivity advantage over its competitors in the market of choice. The interdependency of technical know-how and success in the business climate is measurable along multiple dimensions. Arguably among these indicators are issues related to technical intensity, the willingness and ability to deploy significant technological changes, and certainly sustainable market participation. Several dozen new silicon wafer production technologies have been introduced and taken to various levels of maturity over the past two decades. Here, the authors trace the development of edge-defined film-fed growth (EFG) technology from a fledgling R&D phase to commercialization in this paper within the context of a conventional experience curve for EFG technology.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128509497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.563988
V. Garboushian, G. Turner, S. Yoon, G. Vendura
This paper presents the results of a project to develop back-junction, point-contact silicon solar cells and modules for space. Such cells are already fabricated commercially for terrestrial applications using standardized equipment and processes originally developed for high manufacturing throughput, low-cost semiconductor chip technologies. Individual 2 cm/spl times/2 cm cell outputs of 18%, AM0 are routinely obtained. Since all contacting takes place at the back surface, very high packing densities are possible resulting in comparatively higher output for arrays. The present study is divided into three phases: (1) development of individual cells into a space product, (2) development of rigid and flexible modules (3) and module fabrication for flight experimentation upon the Small Satellite Technology Initiative (SSTI). The first phase focused upon silicon surface and bulk features to increase photon absorption and reduce recombination. The compatibility of the finished cells with space worthy components such as interconnects and coverglasses was confirmed. In the next phase, cells were assembled into small modules. Substrate material included both rigid, 8 mil, silicon wafers as well as flexible, 1 mil Kapton. An interconnection system was developed which consisted of redundant thin-film metal patterns deposited directly on the substrate surfaces. This was followed by a solder reflow bonding process compatible with high volume robotic fabrication equipment. This effort resulted in the fabrication and testing of two SSTI flight modules consisting of a series arrangement of nine 2 cm/spl times/2 cm cells each.
{"title":"Development of back junction point contact photovoltaic cells and arrays for space","authors":"V. Garboushian, G. Turner, S. Yoon, G. Vendura","doi":"10.1109/PVSC.1996.563988","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563988","url":null,"abstract":"This paper presents the results of a project to develop back-junction, point-contact silicon solar cells and modules for space. Such cells are already fabricated commercially for terrestrial applications using standardized equipment and processes originally developed for high manufacturing throughput, low-cost semiconductor chip technologies. Individual 2 cm/spl times/2 cm cell outputs of 18%, AM0 are routinely obtained. Since all contacting takes place at the back surface, very high packing densities are possible resulting in comparatively higher output for arrays. The present study is divided into three phases: (1) development of individual cells into a space product, (2) development of rigid and flexible modules (3) and module fabrication for flight experimentation upon the Small Satellite Technology Initiative (SSTI). The first phase focused upon silicon surface and bulk features to increase photon absorption and reduce recombination. The compatibility of the finished cells with space worthy components such as interconnects and coverglasses was confirmed. In the next phase, cells were assembled into small modules. Substrate material included both rigid, 8 mil, silicon wafers as well as flexible, 1 mil Kapton. An interconnection system was developed which consisted of redundant thin-film metal patterns deposited directly on the substrate surfaces. This was followed by a solder reflow bonding process compatible with high volume robotic fabrication equipment. This effort resulted in the fabrication and testing of two SSTI flight modules consisting of a series arrangement of nine 2 cm/spl times/2 cm cells each.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"156 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128717680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564075
V. Skryshevsky, A. Laugier, V.I. Strikha, V. Vikulov, A. Kaminski
The feasibility of the improvement of crystalline Si solar cells is considered by employing a thick porous Si (PS) layer. The influence of re-emission, absorption and reflectivity of PS on the photocurrent of the solar cell are studied using numerical simulations and experimental verification. The measurement of additional photocurrent caused by re-emission of PS is shown to allow to evaluate the external quantum efficiency of PS photoluminescence which can achieve approximately 4-5% on n-Si. In this case the effect of PS re-emission on short circuit current of commercial solar cells reaches up to a few percent for terrestrial applications. The calculated total benefit of a PS antireflection coating on short-circuit current can be up to 35-41%.
{"title":"Effect of porous silicon layer re-emission on silicon solar cell photocurrent","authors":"V. Skryshevsky, A. Laugier, V.I. Strikha, V. Vikulov, A. Kaminski","doi":"10.1109/PVSC.1996.564075","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564075","url":null,"abstract":"The feasibility of the improvement of crystalline Si solar cells is considered by employing a thick porous Si (PS) layer. The influence of re-emission, absorption and reflectivity of PS on the photocurrent of the solar cell are studied using numerical simulations and experimental verification. The measurement of additional photocurrent caused by re-emission of PS is shown to allow to evaluate the external quantum efficiency of PS photoluminescence which can achieve approximately 4-5% on n-Si. In this case the effect of PS re-emission on short circuit current of commercial solar cells reaches up to a few percent for terrestrial applications. The calculated total benefit of a PS antireflection coating on short-circuit current can be up to 35-41%.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"300 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128620539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564264
C. Heske, G. Richter, Zhonghui Chen, R. Fink, E. Umbach, W. Riedl, F. Karg
Photoelectron spectroscopy (XPS, UPS) has been employed to study the influence of humidity on external and internal surfaces of RTP-processed polycrystalline Cu(In,Ga)Se/sub 2/ thin films for solar cells. Various interactions of deliberately deposited or segregated Na with adsorbed H/sub 2/O have been found. The Na content at the CIGS surface is changed by an H/sub 2/O-induced segregation of Na at low temperatures (100 K) and by reaction and desorption at higher temperatures. Further reactions, such as the passivation of as-deposited "metallic" Na and the formation of a Na-O-CIGS complex influence the electronic structure (i.e. the workfunction and band bending) and are thus of great importance for the electrical performance of corresponding solar cells.
利用光电子能谱(XPS, UPS)研究了湿度对rtp法制备的太阳能电池用多晶Cu(In,Ga)Se/sub 2/薄膜内外表面的影响。发现了有意沉积或分离的Na与吸附的H/sub /O的各种相互作用。低温(100 K)下H/sub / o诱导的Na偏析和高温下的反应和脱附改变了CIGS表面的Na含量。进一步的反应，如沉积“金属”Na的钝化和Na- o - cigs复合物的形成，影响电子结构(即工作函数和能带弯曲)，因此对相应的太阳能电池的电性能非常重要。
{"title":"Influence of humidity on polycrystalline Cu(In,Ga)Se/sub 2/ thin films for solar cells: a study of Na and H/sub 2/O coadsorption","authors":"C. Heske, G. Richter, Zhonghui Chen, R. Fink, E. Umbach, W. Riedl, F. Karg","doi":"10.1109/PVSC.1996.564264","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564264","url":null,"abstract":"Photoelectron spectroscopy (XPS, UPS) has been employed to study the influence of humidity on external and internal surfaces of RTP-processed polycrystalline Cu(In,Ga)Se/sub 2/ thin films for solar cells. Various interactions of deliberately deposited or segregated Na with adsorbed H/sub 2/O have been found. The Na content at the CIGS surface is changed by an H/sub 2/O-induced segregation of Na at low temperatures (100 K) and by reaction and desorption at higher temperatures. Further reactions, such as the passivation of as-deposited \"metallic\" Na and the formation of a Na-O-CIGS complex influence the electronic structure (i.e. the workfunction and band bending) and are thus of great importance for the electrical performance of corresponding solar cells.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129616494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.563959
P. Iles, C. Chu
The paper describes the factors which control back surface reflectance (BSR) in solar cells. High BSR has been used to reduce operating temperatures for space power solar cells and solar cells operated at high current, under concentrators or in TPV applications. High BSR also increases current in high efficiency Si solar cells.
{"title":"Use of high back surface reflectance in PV cell design","authors":"P. Iles, C. Chu","doi":"10.1109/PVSC.1996.563959","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563959","url":null,"abstract":"The paper describes the factors which control back surface reflectance (BSR) in solar cells. High BSR has been used to reduce operating temperatures for space power solar cells and solar cells operated at high current, under concentrators or in TPV applications. High BSR also increases current in high efficiency Si solar cells.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127082937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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