Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195906
P. Victor, J. Nagaraju, S. .. Krupanidhi
Zirconium titanate thin films were deposited on p - type Si substrate by pulsed excimer laser ablation technique. The thin films were highly oriented along (020) and polycrystalline depending on the deposition parameters. A correlation of the microstructure with the electrical properties has been studied in detail. C - V, G V and DC leakage current studies were done on both types of the films. The higher dielectric constant and higher leakage current were observed on the highly oriented thin films than the polycrystalline thin films. The C - V and G - V measurements were carried at higher frequency ranging from 1 kHz to 100 kHz in elevated temperatures and the activation energy calculated from arrhenius plot were approximately half the silicon band gap. This suggests that generation recombination mechanism is taking place in the depletion region of Si substrate through bulk traps. The interface states were calculated using high frequency method and it were higher for the polycrystalline than highly oriented thin films. The electronic conduction mechanism is analysed on both the types of films in detail, applying different kinds of mechanism like Poole-Frenkel, Schottky and space charge limited conduction.
{"title":"Impact of microstructure on the electrical properties of zirconium titanate thin films in MOS configuration","authors":"P. Victor, J. Nagaraju, S. .. Krupanidhi","doi":"10.1109/ISAF.2002.1195906","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195906","url":null,"abstract":"Zirconium titanate thin films were deposited on p - type Si substrate by pulsed excimer laser ablation technique. The thin films were highly oriented along (020) and polycrystalline depending on the deposition parameters. A correlation of the microstructure with the electrical properties has been studied in detail. C - V, G V and DC leakage current studies were done on both types of the films. The higher dielectric constant and higher leakage current were observed on the highly oriented thin films than the polycrystalline thin films. The C - V and G - V measurements were carried at higher frequency ranging from 1 kHz to 100 kHz in elevated temperatures and the activation energy calculated from arrhenius plot were approximately half the silicon band gap. This suggests that generation recombination mechanism is taking place in the depletion region of Si substrate through bulk traps. The interface states were calculated using high frequency method and it were higher for the polycrystalline than highly oriented thin films. The electronic conduction mechanism is analysed on both the types of films in detail, applying different kinds of mechanism like Poole-Frenkel, Schottky and space charge limited conduction.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122323676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195972
D. Jenkins, E. Fribourg-Blanc, É. Cattan, D. Remiens
A control system which utilises analogue electronics has previously been designed to successfully transform an electrostatic actuator, with inherently nonlinear behaviour, into a linear actuator. It is intended that this control system can be applied to electrostrictive actuators, which respond in the same way to the square of the applied electric field. This controller also enables the use of an automated dc bias field to extend the actuation range, whilst still maintaining linear behaviour. This control system is applied to electrostrictive thin films (PMN) deposited on beams to linearly drive them for vibration control and micropositioning of probes, such as in scanning probe microscopy.
{"title":"The linearisation of an electrostrictive device for MEMS applications","authors":"D. Jenkins, E. Fribourg-Blanc, É. Cattan, D. Remiens","doi":"10.1109/ISAF.2002.1195972","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195972","url":null,"abstract":"A control system which utilises analogue electronics has previously been designed to successfully transform an electrostatic actuator, with inherently nonlinear behaviour, into a linear actuator. It is intended that this control system can be applied to electrostrictive actuators, which respond in the same way to the square of the applied electric field. This controller also enables the use of an automated dc bias field to extend the actuation range, whilst still maintaining linear behaviour. This control system is applied to electrostrictive thin films (PMN) deposited on beams to linearly drive them for vibration control and micropositioning of probes, such as in scanning probe microscopy.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132090450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195936
Xiao-ying Zhao, Haiyan Chen, D. Jin, Z. Meng
Based on the 3D finite element modeling of the stator in disc-type traveling wave ultrasonic motor, the influence of several kinds of piezoelectric ceramics bonded underneath the surface of the stator on exciting ultrasonic vibrations was investigated. Taken electromechanical coupling effect into account, numerical simulations were carried out by using the ANSYS finite element software package due to the boundary conditions we proposed. Vibration modes, resonance frequencies and voltage-induced displacements were obtained. The calculated results were in good agreement with the experimental data we measured.
{"title":"The influence of piezoceramic actuator on the stator vibrations in traveling wave ultrasonic motor","authors":"Xiao-ying Zhao, Haiyan Chen, D. Jin, Z. Meng","doi":"10.1109/ISAF.2002.1195936","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195936","url":null,"abstract":"Based on the 3D finite element modeling of the stator in disc-type traveling wave ultrasonic motor, the influence of several kinds of piezoelectric ceramics bonded underneath the surface of the stator on exciting ultrasonic vibrations was investigated. Taken electromechanical coupling effect into account, numerical simulations were carried out by using the ANSYS finite element software package due to the boundary conditions we proposed. Vibration modes, resonance frequencies and voltage-induced displacements were obtained. The calculated results were in good agreement with the experimental data we measured.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133845483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195925
L. Hwang, J. Yoo, J. R. Kim, E. S. Jang, C. S. Lee, M. T. Cho, J. S. Kim
The traditional magnetic ballasts operated at 50-60Hz have been suffered from noticeable flicker, high loss, large crest factor and heavy weight. In this study, in order to solve the problems, new type of electronic ballast which composed of rectifier, active power factor corrector, series-resonant half bridge inverter, feed back circuit for maintaining constantly current to lamp, protection circuit out of order ballast circuit or piezoelectric transformer and end of lamps life, dimming control, piezoelectric transformer for driving T5 fluorescent lamp were manufactured and using a one chip microcontroller. These ballast circuits could replace magnetic transformer and resonant capacitor with piezoelectric transformers. The proposed electronic ballast operated at high frequency (about 75kHz) showed input power factor of more than 0.995, total harmonic distortion of less than 12% and lamp current crest factor of less than 1.5, respectively. And also, output power and efficiency shown 28W and 85%, respectively. Accordingly, it is considered that the ballast using piezoelectric transformer can replace the typical electronic ballast.
{"title":"A study on the T5 fluorescent lamp ballast used contour vibration mode piezoelectric transformer using a one-chip microcontroller","authors":"L. Hwang, J. Yoo, J. R. Kim, E. S. Jang, C. S. Lee, M. T. Cho, J. S. Kim","doi":"10.1109/ISAF.2002.1195925","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195925","url":null,"abstract":"The traditional magnetic ballasts operated at 50-60Hz have been suffered from noticeable flicker, high loss, large crest factor and heavy weight. In this study, in order to solve the problems, new type of electronic ballast which composed of rectifier, active power factor corrector, series-resonant half bridge inverter, feed back circuit for maintaining constantly current to lamp, protection circuit out of order ballast circuit or piezoelectric transformer and end of lamps life, dimming control, piezoelectric transformer for driving T5 fluorescent lamp were manufactured and using a one chip microcontroller. These ballast circuits could replace magnetic transformer and resonant capacitor with piezoelectric transformers. The proposed electronic ballast operated at high frequency (about 75kHz) showed input power factor of more than 0.995, total harmonic distortion of less than 12% and lamp current crest factor of less than 1.5, respectively. And also, output power and efficiency shown 28W and 85%, respectively. Accordingly, it is considered that the ballast using piezoelectric transformer can replace the typical electronic ballast.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"315 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133139318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195886
K. Nashimoto
(Pb,La)(Zr,Ti)O/sub 3/ (PLZT) bilayer waveguides consisting of an optical waveguide layer and an optical buffer layer were grown on Nb-doped semiconductive SrTiO/sub 3/ (NST) substrates by solid-phase epitaxy. Very low propagation losses less than 0.1 dB/cm were achieved at 1.55 /spl mu/m-wavelength in the PLZT slab waveguides on NST substrates. Electro-optic deflection devices were fabricated by preparing indium tin oxide transparent prism electrodes on the surface of the waveguides. Efficient deflection of laser beam coupled in the waveguides was demonstrated by applying voltage between the prism, electrodes and the substrates. Effective electro-optic coefficients as large as 45 pm/V and polarization insensitive properties were observed. A wet-etching or dry-etching process was utilized for fabricating devices with 3 to 6 /spl mu/m-wide channels in the waveguides. Fabricated optical switches showed low-loss, low-voltage drive, and fast response characteristics.
{"title":"PLZT thin film optical waveguide devices","authors":"K. Nashimoto","doi":"10.1109/ISAF.2002.1195886","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195886","url":null,"abstract":"(Pb,La)(Zr,Ti)O/sub 3/ (PLZT) bilayer waveguides consisting of an optical waveguide layer and an optical buffer layer were grown on Nb-doped semiconductive SrTiO/sub 3/ (NST) substrates by solid-phase epitaxy. Very low propagation losses less than 0.1 dB/cm were achieved at 1.55 /spl mu/m-wavelength in the PLZT slab waveguides on NST substrates. Electro-optic deflection devices were fabricated by preparing indium tin oxide transparent prism electrodes on the surface of the waveguides. Efficient deflection of laser beam coupled in the waveguides was demonstrated by applying voltage between the prism, electrodes and the substrates. Effective electro-optic coefficients as large as 45 pm/V and polarization insensitive properties were observed. A wet-etching or dry-etching process was utilized for fabricating devices with 3 to 6 /spl mu/m-wide channels in the waveguides. Fabricated optical switches showed low-loss, low-voltage drive, and fast response characteristics.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129370718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195872
V. Bystrov, N. Bystrova, G. Ovtchinnikova, Y. Pirogov, Y. Dekhtyar
The new experimental results and theoretical approaches in the bioferroelectricity field are analyzed and discussed. The earlier predicted Ferroelectric and Liquid-Crystal-Like Ferroelectric properties of a biological membrane (V. Bystrov, Ferr.Lett., 1992, v.13(6), p.127; 1997, v.27., p.87; 2000, v.27(5-6), p.147; R.Leuchtag&v.Bystrov, Ferroelectrics, 1999, v.220(3-4), p. 157), which was studied in the ion channels, now was experimentally observed in bacteriorhodopsin containing purple membrane films (I.Ermolina et al, J.Phys.Chem., 2001, v.105 (14), p. 2673). Recently bioferroelectric properties of biological objects had developed to the biomedical applications. One of this specific features is the nonlinear response on the weak actions (irradiation, external fields, various kind of nutrition etc.) in the vicinity of the critical for human organism (bifurcation) point, characterized biological object on various levels as on molecular, cell as on the whole organism level.
分析和讨论了生物热发电领域新的实验结果和理论方法。先前预测的生物膜的铁电特性和液晶样铁电特性(V. Bystrov, Ferr.Lett)。， 1992年，第13(6)节，第127页;1997年,v.27。p.87;2000，第27节(5-6)，第147页;R.Leuchtag&v。Bystrov, Ferroelectrics, 1999, v.220(3-4)， p. 157)，在离子通道中进行了研究，现在在含有紫色膜膜的细菌视紫红质中进行了实验观察(I.Ermolina et al .， J.Phys.Chem)。， 2001，第105页(14)，第2673页。近年来，生物物体的生物热电特性已发展到生物医学领域。这种特殊的特征之一是对人体有机体临界(分岔)点附近的弱作用(辐照、外场、各种营养等)的非线性响应，在分子、细胞以至整个生物体的各个水平上表征生物对象。
{"title":"BioFerroelectricity and BioMedicine: new results and approaches","authors":"V. Bystrov, N. Bystrova, G. Ovtchinnikova, Y. Pirogov, Y. Dekhtyar","doi":"10.1109/ISAF.2002.1195872","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195872","url":null,"abstract":"The new experimental results and theoretical approaches in the bioferroelectricity field are analyzed and discussed. The earlier predicted Ferroelectric and Liquid-Crystal-Like Ferroelectric properties of a biological membrane (V. Bystrov, Ferr.Lett., 1992, v.13(6), p.127; 1997, v.27., p.87; 2000, v.27(5-6), p.147; R.Leuchtag&v.Bystrov, Ferroelectrics, 1999, v.220(3-4), p. 157), which was studied in the ion channels, now was experimentally observed in bacteriorhodopsin containing purple membrane films (I.Ermolina et al, J.Phys.Chem., 2001, v.105 (14), p. 2673). Recently bioferroelectric properties of biological objects had developed to the biomedical applications. One of this specific features is the nonlinear response on the weak actions (irradiation, external fields, various kind of nutrition etc.) in the vicinity of the critical for human organism (bifurcation) point, characterized biological object on various levels as on molecular, cell as on the whole organism level.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"282 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116080354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195975
J. Brunahl, A. Grishin
This paper presents two kinds of Xaar-type shared wall actuators for inkjet printing: monolithic and chevron-type. A brief review of design and principle of operation of such devices is given. Analysis of the acoustic resonances of the lead titanate zirconate (PZT) ceramic actuators used as an active element in the printhead is presented. Furthermore, functional performance of the actuators was investigated by means of stroboscopic analysis.
{"title":"\"Chevron\"-type piezoelectric inkjet actuator","authors":"J. Brunahl, A. Grishin","doi":"10.1109/ISAF.2002.1195975","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195975","url":null,"abstract":"This paper presents two kinds of Xaar-type shared wall actuators for inkjet printing: monolithic and chevron-type. A brief review of design and principle of operation of such devices is given. Analysis of the acoustic resonances of the lead titanate zirconate (PZT) ceramic actuators used as an active element in the printhead is presented. Furthermore, functional performance of the actuators was investigated by means of stroboscopic analysis.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123416917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195889
R. Lanz, P. Muralt
Bulk acoustic wave (BAW) resonators and filters have been fabricated in the frequency range between 7 and 8 GHz. Resonators with quality factors of 550, and coupling factors k/sup 2/ of 5.5 % have been achieved. The obtained resonator characteristics theoretically yield filters of 3.5 % 3dB bandwidths with flat channel characteristics, and insertion losses of -6 dB. The tradeoffs related to the use of aluminum or platinum bottom electrodes is investigated theoretically. While aluminum is expected to yield filters with lower insertion loss, Pt is expected to yield larger bandwidths.
{"title":"8 GHz microwave filters based on bulk acoustic waves in piezoelectric AlN thin films","authors":"R. Lanz, P. Muralt","doi":"10.1109/ISAF.2002.1195889","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195889","url":null,"abstract":"Bulk acoustic wave (BAW) resonators and filters have been fabricated in the frequency range between 7 and 8 GHz. Resonators with quality factors of 550, and coupling factors k/sup 2/ of 5.5 % have been achieved. The obtained resonator characteristics theoretically yield filters of 3.5 % 3dB bandwidths with flat channel characteristics, and insertion losses of -6 dB. The tradeoffs related to the use of aluminum or platinum bottom electrodes is investigated theoretically. While aluminum is expected to yield filters with lower insertion loss, Pt is expected to yield larger bandwidths.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127683029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195901
Kyuho Cho, N. Wu, A. Ignatiev, Jianren Li
High dielectric CaCu/sub 3/Ti/sub 4/O/sub 12/ (CCTO) thin films were successfully grown on LaAlO/sub 3/(100) (LAO) crystalline substrates and on SrRuO/sub 3/(SRO) conductive films on LAO substrates by the pulsed laser deposition (PLD) method. Microstructure and dielectric properties of (001) oriented (CCTO) epitaxial thin films were evaluated, and compared to those of CCTO polycrystalline bulk samples by x-ray diffraction, DC conductivity and dielectric measurements. The gigantic dielectric constant of greater than 20,000 in polycrystalline CCTO can be accounted for by the internal barrier layer capacitance (IBLC) model. However, this model fails to explain the large dielectric constant behavior for epitaxial CCTO/SRO/LAO thin films which also show high DC conductivity. XPS analysis indicated that oxygen vacancies could be a possible factor responsible for the low resistivity of thin film.
{"title":"Dielectric properties of CaCu/sub 3/Ti/sub 4/O/sub 12/ thin films","authors":"Kyuho Cho, N. Wu, A. Ignatiev, Jianren Li","doi":"10.1109/ISAF.2002.1195901","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195901","url":null,"abstract":"High dielectric CaCu/sub 3/Ti/sub 4/O/sub 12/ (CCTO) thin films were successfully grown on LaAlO/sub 3/(100) (LAO) crystalline substrates and on SrRuO/sub 3/(SRO) conductive films on LAO substrates by the pulsed laser deposition (PLD) method. Microstructure and dielectric properties of (001) oriented (CCTO) epitaxial thin films were evaluated, and compared to those of CCTO polycrystalline bulk samples by x-ray diffraction, DC conductivity and dielectric measurements. The gigantic dielectric constant of greater than 20,000 in polycrystalline CCTO can be accounted for by the internal barrier layer capacitance (IBLC) model. However, this model fails to explain the large dielectric constant behavior for epitaxial CCTO/SRO/LAO thin films which also show high DC conductivity. XPS analysis indicated that oxygen vacancies could be a possible factor responsible for the low resistivity of thin film.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129924788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195914
M. E. Ebrahimi, M. Allahverdi, A. Safari
A method for synthesis of platelet seeds by epitaxial growth of SrTiO/sub 3/ on Sr/sub 3/Ti/sub 2/O/sub 7/ core particles is reported. The aim of this study was to control the morphology, particle size, phase and chemical purity of SrTiO/sub 3/ seeds. Strontium titanate seeds will be used as templates in layered manufacturing to grow large lead magnesium niobate-lead titanate (PMN-PT) crystals within a polycrystalline matrix. Anisometric single crystal particles of Sr/sub 3/Ti/sub 2/O/sub 7/ were synthesized in molten KCl salt at 1200-1300/spl deg/C. Plate-like morphology with a high aspect ratio of 7-10 was obtained. The XRD and SEM revealed a well-developed single crystal structure with rectangular faces. The plate-like Sr/sub 3/Ti/sub 2/O/sub 7/ particles were then reacted with TiO/sub 2/ in a second molten salt synthesis to prepare SrTiO/sub 3/. Platelet <001> SrTiO/sub 3/ particles with rectangular faces having an edge length of 10-40 /spl mu/m and a thickness of 1-4 /spl mu/m were obtained. The effects of processing steps on the morphology, particles size, and composition of the platelets are presented. The high aspect ratio SrTiO/sub 3/ platelets are suitable template candidates to achieve textured PMN-PT ceramics.
{"title":"Synthesis of platelet SrTiO/sub 3/ by epitaxial growth on Sr/sub 3/Ti/sub 2/O/sub 7/ core particles","authors":"M. E. Ebrahimi, M. Allahverdi, A. Safari","doi":"10.1109/ISAF.2002.1195914","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195914","url":null,"abstract":"A method for synthesis of platelet seeds by epitaxial growth of SrTiO/sub 3/ on Sr/sub 3/Ti/sub 2/O/sub 7/ core particles is reported. The aim of this study was to control the morphology, particle size, phase and chemical purity of SrTiO/sub 3/ seeds. Strontium titanate seeds will be used as templates in layered manufacturing to grow large lead magnesium niobate-lead titanate (PMN-PT) crystals within a polycrystalline matrix. Anisometric single crystal particles of Sr/sub 3/Ti/sub 2/O/sub 7/ were synthesized in molten KCl salt at 1200-1300/spl deg/C. Plate-like morphology with a high aspect ratio of 7-10 was obtained. The XRD and SEM revealed a well-developed single crystal structure with rectangular faces. The plate-like Sr/sub 3/Ti/sub 2/O/sub 7/ particles were then reacted with TiO/sub 2/ in a second molten salt synthesis to prepare SrTiO/sub 3/. Platelet <001> SrTiO/sub 3/ particles with rectangular faces having an edge length of 10-40 /spl mu/m and a thickness of 1-4 /spl mu/m were obtained. The effects of processing steps on the morphology, particles size, and composition of the platelets are presented. The high aspect ratio SrTiO/sub 3/ platelets are suitable template candidates to achieve textured PMN-PT ceramics.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130296233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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