Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195962
A. Renault, H. Dammak, P. Gaucher, M. Pham Thi, G. Calvarin
The domain configuration and the electromechanical related properties have been studied in Pb[(Zn/sub 1/3/Nb/sub 2/3/)/sub 0.91/Ti/sub 0.09/]O/sub 3/ (PZN-9%PT) single crystals cut along [001] and [101~]. It was established that soft (with high d) and hard (with lower d) piezoelectric properties are respectively obtained in a multidomain and a single domain configuration. The softer piezoelectric material (d/sub 33/ = 2700 pC/N, s/sub 33//sup E/ = 180 pN/m/sup 2/, k/sub 33/ = 93%) was found in the monoclinic multidomain state after poling with a small field along [001]. Optimal poling process and electromechanical related properties of the single crystals were discussed in term of the field-temperature diagram.
{"title":"Domain engineering of Pb[(Zn/sub 1/3/Nb/sub 2/3/)/sub 0.91/Ti/sub 0.09/]O/sub 3/ single crystals and piezoelectric related properties","authors":"A. Renault, H. Dammak, P. Gaucher, M. Pham Thi, G. Calvarin","doi":"10.1109/ISAF.2002.1195962","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195962","url":null,"abstract":"The domain configuration and the electromechanical related properties have been studied in Pb[(Zn/sub 1/3/Nb/sub 2/3/)/sub 0.91/Ti/sub 0.09/]O/sub 3/ (PZN-9%PT) single crystals cut along [001] and [101~]. It was established that soft (with high d) and hard (with lower d) piezoelectric properties are respectively obtained in a multidomain and a single domain configuration. The softer piezoelectric material (d/sub 33/ = 2700 pC/N, s/sub 33//sup E/ = 180 pN/m/sup 2/, k/sub 33/ = 93%) was found in the monoclinic multidomain state after poling with a small field along [001]. Optimal poling process and electromechanical related properties of the single crystals were discussed in term of the field-temperature diagram.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131492120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195969
Y. Ohya, T. Tamakoshi, T. Ban, Y. Takahashi
Lead zirconate titanate (PZT) films were fabricated by a sol-gel method. The sol was prepared using Ti(O/sup i/Pr)/sub 4/, Pb(OAc)/sub 2//spl middot/3H/sub 2/O, Zr(O/sup n/Bu)/sub 4/, and diethanolamine (DEA) with a molar ratio of DEA/(Ti+Zr)=1. They were dissolved in isopropanol solvent. The concentrations of the sol were about 1.5 and 0.4 mol/L with compositions of Pb/sub x/(Ti/sub 0.5/Zr/sub 0.5/)O/sub 3/, (x = 1.1 and 1.3). The substrate used was Si wafer sputtered with Pt as an electrode. The deposition was conducted by a dip-coating procedure. After deposition and drying at 110/spl deg/C, the substrate was heated at 700/spl deg/C for 30min to crystallize perovskite phase. This coating-drying-heating cycle was repeated several times to obtain a thick PZT film. The fabricated films was about 7 /spl mu/m thick by eight depositions and consisted of the first three thin layers (90 nm each) and five to eight thick layers (1.2 /spl mu/m each). The dielectric constant of the films was about 400 and tan/spl delta/ was about 0.01 at 1 kHz. The films exhibited typical ferroelectric P-E hysteresis curve and the remanent polarization and coercive force were 29.7 /spl mu/C/cm/sup 2/ and 69.7 kV/cm, respectively. The admittance measurement of the poled thick film exhibited clear resonance and antiresonance peaks. The piezoelectric displacement was measured by a laser interferometer and the piezoelectric constant, d/sub 33/, was calculated as 430 to 550 pm/V.
{"title":"Lead zirconate titanate thick films by sol-gel method for piezoelectric applications","authors":"Y. Ohya, T. Tamakoshi, T. Ban, Y. Takahashi","doi":"10.1109/ISAF.2002.1195969","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195969","url":null,"abstract":"Lead zirconate titanate (PZT) films were fabricated by a sol-gel method. The sol was prepared using Ti(O/sup i/Pr)/sub 4/, Pb(OAc)/sub 2//spl middot/3H/sub 2/O, Zr(O/sup n/Bu)/sub 4/, and diethanolamine (DEA) with a molar ratio of DEA/(Ti+Zr)=1. They were dissolved in isopropanol solvent. The concentrations of the sol were about 1.5 and 0.4 mol/L with compositions of Pb/sub x/(Ti/sub 0.5/Zr/sub 0.5/)O/sub 3/, (x = 1.1 and 1.3). The substrate used was Si wafer sputtered with Pt as an electrode. The deposition was conducted by a dip-coating procedure. After deposition and drying at 110/spl deg/C, the substrate was heated at 700/spl deg/C for 30min to crystallize perovskite phase. This coating-drying-heating cycle was repeated several times to obtain a thick PZT film. The fabricated films was about 7 /spl mu/m thick by eight depositions and consisted of the first three thin layers (90 nm each) and five to eight thick layers (1.2 /spl mu/m each). The dielectric constant of the films was about 400 and tan/spl delta/ was about 0.01 at 1 kHz. The films exhibited typical ferroelectric P-E hysteresis curve and the remanent polarization and coercive force were 29.7 /spl mu/C/cm/sup 2/ and 69.7 kV/cm, respectively. The admittance measurement of the poled thick film exhibited clear resonance and antiresonance peaks. The piezoelectric displacement was measured by a laser interferometer and the piezoelectric constant, d/sub 33/, was calculated as 430 to 550 pm/V.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133410141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195897
K. Ohnuki, T. Higuchi, M. Takayasu, M. Sogawa, T. Tsukamoto
Ferroelectric Ba/sub 2/NaNb/sub 5/O/sub 15/ (BNN) thin films were prepared on MgO (100) substrates by pulsed laser deposition method. When the laser power density and repetition frequency were fixed at 200 mJ/cm/sup 2/ and 5 Hz, respectively, the c-axis oriented BNN thin film was obtained at substrate temperature of 650/spl deg/C. The interface between the c-axis oriented BNN thin film and MgO substrate was very smooth. The band gap of the c-axis oriented BNN thin film was about 3.1 eV, which accords to that of the BNN single crystal.
{"title":"Low-temperature preparation of ferroelectric Ba/sub 2/NaNb/sub 5/O/sub 15/ thin films by pulsed laser deposition","authors":"K. Ohnuki, T. Higuchi, M. Takayasu, M. Sogawa, T. Tsukamoto","doi":"10.1109/ISAF.2002.1195897","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195897","url":null,"abstract":"Ferroelectric Ba/sub 2/NaNb/sub 5/O/sub 15/ (BNN) thin films were prepared on MgO (100) substrates by pulsed laser deposition method. When the laser power density and repetition frequency were fixed at 200 mJ/cm/sup 2/ and 5 Hz, respectively, the c-axis oriented BNN thin film was obtained at substrate temperature of 650/spl deg/C. The interface between the c-axis oriented BNN thin film and MgO substrate was very smooth. The band gap of the c-axis oriented BNN thin film was about 3.1 eV, which accords to that of the BNN single crystal.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132709950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195957
R. Komatsu, K. Adachi, K. Ikeda
Ferroelectric orthorhombic potassium niobate (KNbO/sub 3/) crystal is successfully grown from an aqueous solution dissolving K/sub 2/NbO/sub 3/F as a nutrient. Although the size of each crystal is about 30 /spl mu/m or less, properties of the formed KNbO/sub 3/ crystals have been examined. The possibility of this method in the future to grow KNbO/sub 3/ crystals or thin films has also been investigated in order to apply KNbO/sub 3/ to SAW and BAW devices.
{"title":"Direct growth of orthorhombic potassium niobate (KNbO/sub 3/) crystal from an aqueous solution","authors":"R. Komatsu, K. Adachi, K. Ikeda","doi":"10.1109/ISAF.2002.1195957","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195957","url":null,"abstract":"Ferroelectric orthorhombic potassium niobate (KNbO/sub 3/) crystal is successfully grown from an aqueous solution dissolving K/sub 2/NbO/sub 3/F as a nutrient. Although the size of each crystal is about 30 /spl mu/m or less, properties of the formed KNbO/sub 3/ crystals have been examined. The possibility of this method in the future to grow KNbO/sub 3/ crystals or thin films has also been investigated in order to apply KNbO/sub 3/ to SAW and BAW devices.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130333560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195863
K. H. Lam, H. Chan, C. Choy, E. Luo, I. Wilson
Polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE) 70/30 mol%] copolymer can be transformed from a ferroelectric to a relaxor material after proton irradiation. The phase transition peak broadens and shifts towards lower temperature as the measurement frequency decreases. In the present study, 0-3 composites are fabricated by incorporating 0-9Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-0.1PbTiO/sub 3/ ceramic powder into a P(VDF-TrFE) 70/30 mol% copolymer matrix. 0.9PMN-0.1PT ceramic is a relaxor ferroelectric with high dielectric permittivity. It was found that the relative permittivity of PMN-PT/P(VDF-TrFE) 0-3 composite increases with increasing ceramic volume fraction. Composites with 0.3 and 0.4 volume fraction of 0.9PMN-0.1PT were subjected to proton irradiation. With a 80 Mrad (4.76 /spl times/ 10/sup 13/ ions/cm/sup 2/) proton dosage, the relative permittivity of the 0.4 volume fraction 0-3 composites can go up to 130 near room temperature (at 1 kHz).
{"title":"Studies of proton irradiated 0.9PMN-0.1PT/P(VDF-TrFE) 0-3 composites","authors":"K. H. Lam, H. Chan, C. Choy, E. Luo, I. Wilson","doi":"10.1109/ISAF.2002.1195863","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195863","url":null,"abstract":"Polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE) 70/30 mol%] copolymer can be transformed from a ferroelectric to a relaxor material after proton irradiation. The phase transition peak broadens and shifts towards lower temperature as the measurement frequency decreases. In the present study, 0-3 composites are fabricated by incorporating 0-9Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-0.1PbTiO/sub 3/ ceramic powder into a P(VDF-TrFE) 70/30 mol% copolymer matrix. 0.9PMN-0.1PT ceramic is a relaxor ferroelectric with high dielectric permittivity. It was found that the relative permittivity of PMN-PT/P(VDF-TrFE) 0-3 composite increases with increasing ceramic volume fraction. Composites with 0.3 and 0.4 volume fraction of 0.9PMN-0.1PT were subjected to proton irradiation. With a 80 Mrad (4.76 /spl times/ 10/sup 13/ ions/cm/sup 2/) proton dosage, the relative permittivity of the 0.4 volume fraction 0-3 composites can go up to 130 near room temperature (at 1 kHz).","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124577405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195909
N. Fujimura, H. Sakata, D. Ito, T. Yokota, T. Ito
Dielectric and magnetic properties of A-site substituted YMnO/sub 3/ ceramics and epitaxial films were studied. Stoichiometric polycrystalline bulk sample exhibit p-type conduction due to the existence of Mn/sup 4+/. The I-V property is well explained the Pool-Frenkel type carrier emission, and the activation energy is calculated to be 0.38 eV. The carrier density decreases by Zr doping and increases by Li or Mg doping. Although all the samples exhibit antiferromagnetic magnetization behavior against the applied magnetic field at 5 K, carrier doped samples displays parasitic ferromagnetic behavior (weak ferromagnetism). Epitaxial films show distinct ferroelectric property and also exhibit antiferromagnetism. Substituting Y with Yb enhances the ferromagnetic interaction.
{"title":"Effect of A-site substitution on the magnetic and dielectric behaviors of YMnO/sub 3/ based ferroelectric thin films","authors":"N. Fujimura, H. Sakata, D. Ito, T. Yokota, T. Ito","doi":"10.1109/ISAF.2002.1195909","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195909","url":null,"abstract":"Dielectric and magnetic properties of A-site substituted YMnO/sub 3/ ceramics and epitaxial films were studied. Stoichiometric polycrystalline bulk sample exhibit p-type conduction due to the existence of Mn/sup 4+/. The I-V property is well explained the Pool-Frenkel type carrier emission, and the activation energy is calculated to be 0.38 eV. The carrier density decreases by Zr doping and increases by Li or Mg doping. Although all the samples exhibit antiferromagnetic magnetization behavior against the applied magnetic field at 5 K, carrier doped samples displays parasitic ferromagnetic behavior (weak ferromagnetism). Epitaxial films show distinct ferroelectric property and also exhibit antiferromagnetism. Substituting Y with Yb enhances the ferromagnetic interaction.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"7 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113980179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195967
Laurent Simon, P. Gonnard, L. Lebrun
This work is focused on the electromechanical characterization of lead titanate and Pb(Zr/sub 0.52/Ti/sub 0.48/)O/sub 3/ thick films (30 - 100 /spl mu/m) screen-printed on various substrates (alumina, silicon and glass-ceramic). Measurements of permittivity and piezoelectric constant are given at low signal and as a function of the AC electric field amplitude. Measurement of the true remanent polarization on PT films is more delicate due to the existence of an internal electric field which is different according to the type of the bottom electrode. A correct value can be achieved by extrapolation. At last the elastic stiffness and the extensional thickness coupling factor k/sub t/ are evaluated by analyzing the resonance frequency spectrum of the piezoelectric film supported by a substrate. Some reasons of inaccuracy of the results are stated.
{"title":"Electromechanical characterization of thick PT and PZT films","authors":"Laurent Simon, P. Gonnard, L. Lebrun","doi":"10.1109/ISAF.2002.1195967","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195967","url":null,"abstract":"This work is focused on the electromechanical characterization of lead titanate and Pb(Zr/sub 0.52/Ti/sub 0.48/)O/sub 3/ thick films (30 - 100 /spl mu/m) screen-printed on various substrates (alumina, silicon and glass-ceramic). Measurements of permittivity and piezoelectric constant are given at low signal and as a function of the AC electric field amplitude. Measurement of the true remanent polarization on PT films is more delicate due to the existence of an internal electric field which is different according to the type of the bottom electrode. A correct value can be achieved by extrapolation. At last the elastic stiffness and the extensional thickness coupling factor k/sub t/ are evaluated by analyzing the resonance frequency spectrum of the piezoelectric film supported by a substrate. Some reasons of inaccuracy of the results are stated.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114134034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195948
Haiyan Chen, X. Guo, Wenbiao Wu, Z. Meng
Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-Pb(Mn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbZrO/sub 3/-PbTiO/sub 3/ (PMMN-PZT) quaternary piezoelectric ceramics with the various contents of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ (PMN), which locate in the vicinity of the morphotropic phase boundary (MPB), were fabricated. The phase structure of the system was delineated by X-ray diffraction analysis. The piezoelectric and dielectric properties were also measured. Experimental results reveal that the MPB coexisting tetragonal and rhombohedral phases in the present system has a broad composition region from 0.10 to 0.14mol% PM. The piezoelectric coefficient and electromechanical coupling factor increase with increasing PMN and reach the maximum values at 12mol% PMN, then decrease remarkably with further PMN addition, whereas the variation of Qm with PMN addition shows the opposite trend. The dielectric constant also reaches the maximum value at 12mol% PMN. It is found that compared with the as-sintered samples, the dielectric constant of the poled samples in tetragonal phase increases, while there are contrary results in rhombohedral phase. The variation of dielectric properties reflects the transition from tetragonal phase to rhombohedral phase.
{"title":"The influence of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ content on the piezoelectric and dielectric properties of PMNN-PZT system near the MPB","authors":"Haiyan Chen, X. Guo, Wenbiao Wu, Z. Meng","doi":"10.1109/ISAF.2002.1195948","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195948","url":null,"abstract":"Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-Pb(Mn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbZrO/sub 3/-PbTiO/sub 3/ (PMMN-PZT) quaternary piezoelectric ceramics with the various contents of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ (PMN), which locate in the vicinity of the morphotropic phase boundary (MPB), were fabricated. The phase structure of the system was delineated by X-ray diffraction analysis. The piezoelectric and dielectric properties were also measured. Experimental results reveal that the MPB coexisting tetragonal and rhombohedral phases in the present system has a broad composition region from 0.10 to 0.14mol% PM. The piezoelectric coefficient and electromechanical coupling factor increase with increasing PMN and reach the maximum values at 12mol% PMN, then decrease remarkably with further PMN addition, whereas the variation of Qm with PMN addition shows the opposite trend. The dielectric constant also reaches the maximum value at 12mol% PMN. It is found that compared with the as-sintered samples, the dielectric constant of the poled samples in tetragonal phase increases, while there are contrary results in rhombohedral phase. The variation of dielectric properties reflects the transition from tetragonal phase to rhombohedral phase.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124472234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195918
M. Pan, R. Rayne, B. Bender
In this study, we examined the effects of niobium oxide and lanthanum oxide dopants on the dielectric properties of a lead barium zirconate titanate (PBZT) relaxor material. Specifically, our goal was to maximize PBZT's dielectric constant (>6000) while maintaining its stability under DC electric field for filter capacitor applications. Our results showed that the Nb addition did not have a significant effect on the dielectric behavior of PBZT, except the 1% Nb addition which increased the PBZT's dielectric constant by 17%. The cause of the increase is speculated in this article. On the other hand, the La addition caused a monotonic decrease of dielectric constant and a significant shift of the dielectric peaks toward low temperature.
{"title":"Dielectric properties of lead barium zirconate titanate-based relaxors for power electronics applications","authors":"M. Pan, R. Rayne, B. Bender","doi":"10.1109/ISAF.2002.1195918","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195918","url":null,"abstract":"In this study, we examined the effects of niobium oxide and lanthanum oxide dopants on the dielectric properties of a lead barium zirconate titanate (PBZT) relaxor material. Specifically, our goal was to maximize PBZT's dielectric constant (>6000) while maintaining its stability under DC electric field for filter capacitor applications. Our results showed that the Nb addition did not have a significant effect on the dielectric behavior of PBZT, except the 1% Nb addition which increased the PBZT's dielectric constant by 17%. The cause of the increase is speculated in this article. On the other hand, the La addition caused a monotonic decrease of dielectric constant and a significant shift of the dielectric peaks toward low temperature.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124655681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195939
J. Cannata, T. Shrout, K. Shung
Ultrasound backscatter microscope (UBM) imaging systems operating above 20 MHz are capable of achieving the axial and lateral resolutions needed for applications in ophthalmology and dermatology. Unfortunately these systems rely upon mechanically scanned single element transducers and suffer from a fixed focus, low frame rate and cumbersome scanning hardware. High frequency arrays are therefore desirable for several reasons, including the ability to dynamically focus the sound beam, increase frame rates and clinical convenience. This study investigates the design tradeoffs involved in the development of a high frequency (35 MHz) 64-element linear array. This array was designed primarily for human eye and skin imaging, and features monolithic elements mechanically diced out of a fine grain high density PZT-5H ceramic. Array elements were spaced with a 50 /spl mu/m pitch, interconnected via a flexible circuit and matched to the 50 /spl Omega/ system electronics via a 85 /spl Omega/ transmission line coaxial cable. Several prototype arrays were constructed with promising results. An average center frequency of 34 MHz with a -6 dB bandwidth of at least 45% per element was achieved. The maximum combined electrical and acoustical crosstalk for nearest and next nearest elements was less than -29 dB, and the average 40 dB pulse length was 105 ns.
{"title":"A 35 MHz linear ultrasonic array for medical imaging","authors":"J. Cannata, T. Shrout, K. Shung","doi":"10.1109/ISAF.2002.1195939","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195939","url":null,"abstract":"Ultrasound backscatter microscope (UBM) imaging systems operating above 20 MHz are capable of achieving the axial and lateral resolutions needed for applications in ophthalmology and dermatology. Unfortunately these systems rely upon mechanically scanned single element transducers and suffer from a fixed focus, low frame rate and cumbersome scanning hardware. High frequency arrays are therefore desirable for several reasons, including the ability to dynamically focus the sound beam, increase frame rates and clinical convenience. This study investigates the design tradeoffs involved in the development of a high frequency (35 MHz) 64-element linear array. This array was designed primarily for human eye and skin imaging, and features monolithic elements mechanically diced out of a fine grain high density PZT-5H ceramic. Array elements were spaced with a 50 /spl mu/m pitch, interconnected via a flexible circuit and matched to the 50 /spl Omega/ system electronics via a 85 /spl Omega/ transmission line coaxial cable. Several prototype arrays were constructed with promising results. An average center frequency of 34 MHz with a -6 dB bandwidth of at least 45% per element was achieved. The maximum combined electrical and acoustical crosstalk for nearest and next nearest elements was less than -29 dB, and the average 40 dB pulse length was 105 ns.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129753343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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