Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547069
M. Kisin, Denis V. Mamedov, H. El-Ghoroury
Full-color III-nitride light-emitting diode (LED) with complete covering of standard red-green-blue (RGB) optical emission spectrum is demonstrated. Intermediate carrier blocking layers (ICBLs) are introduced into multi-quantum well (MQW) active region of III-nitride multi-color LED to control the carrier injection distribution among the optically active quantum wells (QWs) with different emission wavelengths. Strong interdependence between ICBL parameters and active QW characteristics represents the main challenge for the full-color LED design and implementation. We show that ICBLs are essential elements of full-color RGB LED design requiring optimization both in material composition and doping level. Prototype ICBL-LED structure has been grown at Ostendo Technologies Inc. demonstrating tunable full-color operation.
{"title":"Simulation of full-color III-nitride RGB LED","authors":"M. Kisin, Denis V. Mamedov, H. El-Ghoroury","doi":"10.1109/NUSOD.2016.7547069","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547069","url":null,"abstract":"Full-color III-nitride light-emitting diode (LED) with complete covering of standard red-green-blue (RGB) optical emission spectrum is demonstrated. Intermediate carrier blocking layers (ICBLs) are introduced into multi-quantum well (MQW) active region of III-nitride multi-color LED to control the carrier injection distribution among the optically active quantum wells (QWs) with different emission wavelengths. Strong interdependence between ICBL parameters and active QW characteristics represents the main challenge for the full-color LED design and implementation. We show that ICBLs are essential elements of full-color RGB LED design requiring optimization both in material composition and doping level. Prototype ICBL-LED structure has been grown at Ostendo Technologies Inc. demonstrating tunable full-color operation.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"2018 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124281934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547009
K. Rustomji, R. Abdeddaim, B. Kuhlmey, S. Enoch
We compare two simulation methods of calculating the Purcell factor in a hyperbolic metamaterial and validate our simulations with measurements. We calculate the Purcell factor from a direct calculation of the local density of states from the band structure of the periodic unit cell. We compare this method with calculations of the Purcell factor obtained from the finite difference time domain (FDTD) calculations of the impedance of a dipole antenna located inside the structure. We show that we can study the Purcell factor in transverse electric (TE) and transverse magnetic (TM) polarisations by using electric and magnetic dipoles, we support our argument by analysing the dispersion relations of the structure.
{"title":"Evaluating the Purcell factor in hyperbolic metamaterials","authors":"K. Rustomji, R. Abdeddaim, B. Kuhlmey, S. Enoch","doi":"10.1109/NUSOD.2016.7547009","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547009","url":null,"abstract":"We compare two simulation methods of calculating the Purcell factor in a hyperbolic metamaterial and validate our simulations with measurements. We calculate the Purcell factor from a direct calculation of the local density of states from the band structure of the periodic unit cell. We compare this method with calculations of the Purcell factor obtained from the finite difference time domain (FDTD) calculations of the impedance of a dipole antenna located inside the structure. We show that we can study the Purcell factor in transverse electric (TE) and transverse magnetic (TM) polarisations by using electric and magnetic dipoles, we support our argument by analysing the dispersion relations of the structure.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126274989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547057
Guangyuan Li, C. D. de Sterke, S. Palomba
Plasmonic waveguides are promising in nonlinear optical applications because of their subwavelength field confinement, which can strongly enhance light-matter interactions and greatly reduce the device footprint. We investigate the Kerr nonlinear characteristics of two typical plasmonic waveguides and compare their relative merits to a conventional all-dielectric silicon slot waveguide. This work provides useful guidance on designing ultra-compact nonlinear optical devices.
{"title":"Kerr nonlinear characteristics of plasmonic waveguide devices","authors":"Guangyuan Li, C. D. de Sterke, S. Palomba","doi":"10.1109/NUSOD.2016.7547057","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547057","url":null,"abstract":"Plasmonic waveguides are promising in nonlinear optical applications because of their subwavelength field confinement, which can strongly enhance light-matter interactions and greatly reduce the device footprint. We investigate the Kerr nonlinear characteristics of two typical plasmonic waveguides and compare their relative merits to a conventional all-dielectric silicon slot waveguide. This work provides useful guidance on designing ultra-compact nonlinear optical devices.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129373672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547011
Gerardo E. Villarreal-Garcia, N. Tyler, J. Barreto, D. Bonneau, D. Sahin, J. O'Brien, M. Thompson
We present an analysis of a single photon detector system capable of achieving near-unity detection efficiency. It consist of waveguide-coupled superconducting nanowires as short as 1 μm embedded in a racetrack resonator.
{"title":"Modelling superconducting nanowire single photon detectors in a waveguide-based ring resonator","authors":"Gerardo E. Villarreal-Garcia, N. Tyler, J. Barreto, D. Bonneau, D. Sahin, J. O'Brien, M. Thompson","doi":"10.1109/NUSOD.2016.7547011","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547011","url":null,"abstract":"We present an analysis of a single photon detector system capable of achieving near-unity detection efficiency. It consist of waveguide-coupled superconducting nanowires as short as 1 μm embedded in a racetrack resonator.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115269696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7546997
J. Piprek
Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% power conversion efficiency, while GaN-based blue light-emitting diodes reach up to 84% This paper investigates non-thermal reasons behind this difference by comparative numerical device simulation. Fundamental material properties such as poor hole conductivity and high internal absorption are shown to make GaN-lasers inherently less efficient than GaAs-lasers.
{"title":"Comparative analysis of efficiency limitations in GaN-based blue laser diodes","authors":"J. Piprek","doi":"10.1109/NUSOD.2016.7546997","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7546997","url":null,"abstract":"Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% power conversion efficiency, while GaN-based blue light-emitting diodes reach up to 84% This paper investigates non-thermal reasons behind this difference by comparative numerical device simulation. Fundamental material properties such as poor hole conductivity and high internal absorption are shown to make GaN-lasers inherently less efficient than GaAs-lasers.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"231 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114008481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present methods for retrieving the effective impedance of metamaterials from the Fresnel reflection coefficients at the interface between two semi-infinite media. The derivation involves the projection of modal expansions onto the dominant modes of the two semi-infinite media. It is shown that a number of effective impedance formulas, previously obtained by field averaging techniques, can also be derived from the scattering-based formalism, by an appropriate choice of projection.
{"title":"Effective impedance modeling of metamaterial structures","authors":"K. Dossou, C. Poulton, L. Botten","doi":"10.1364/JOSAA.33.000361","DOIUrl":"https://doi.org/10.1364/JOSAA.33.000361","url":null,"abstract":"We present methods for retrieving the effective impedance of metamaterials from the Fresnel reflection coefficients at the interface between two semi-infinite media. The derivation involves the projection of modal expansions onto the dominant modes of the two semi-infinite media. It is shown that a number of effective impedance formulas, previously obtained by field averaging techniques, can also be derived from the scattering-based formalism, by an appropriate choice of projection.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127556939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-17DOI: 10.1364/IPRSN.2012.IM3B.1
K. Busch
A review of the current status of Discontinuous Galerkin methods and their applications in nano-photonics is provided and future directions in methodic developments and applications are discussed.
综述了不连续伽辽金方法及其在纳米光子学中的应用现状，并讨论了方法发展和应用的未来方向。
{"title":"Discontinuous Galerkin methods in nano-photonics","authors":"K. Busch","doi":"10.1364/IPRSN.2012.IM3B.1","DOIUrl":"https://doi.org/10.1364/IPRSN.2012.IM3B.1","url":null,"abstract":"A review of the current status of Discontinuous Galerkin methods and their applications in nano-photonics is provided and future directions in methodic developments and applications are discussed.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132527853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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