Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547052
J. Piprek, Zhanming Li
Recently, GaN-based light-emitting diodes (LEDs) were demonstrated to emit photons of higher energy than the injected electrons up to elevated currents, which is attributed to heat extraction from the crystal lattice. We investigate this electroluminescent cooling effect by advanced device simulation which is in good agreement with measurements on industry-grade blue LEDs. The built-in polarization is found to enhance the cooling process while Joule heating is negligible even at higher currents. Strategies for enhanced heat removal from the LED are evaluated.
{"title":"Analysis of electroluminescent cooling in GaN-LEDs","authors":"J. Piprek, Zhanming Li","doi":"10.1109/NUSOD.2016.7547052","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547052","url":null,"abstract":"Recently, GaN-based light-emitting diodes (LEDs) were demonstrated to emit photons of higher energy than the injected electrons up to elevated currents, which is attributed to heat extraction from the crystal lattice. We investigate this electroluminescent cooling effect by advanced device simulation which is in good agreement with measurements on industry-grade blue LEDs. The built-in polarization is found to enhance the cooling process while Joule heating is negligible even at higher currents. Strategies for enhanced heat removal from the LED are evaluated.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133974116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547071
Bin Xue, P. Lu, P. Ren, Ning Zhang, Zhe Liu, Junxi Wang, Jinmin Li
A simulated model consists of chip-on-board (COB) packaged light emitting diode (LED) array with silicon resin based optical component was built. The principle of the simulation was to investigate the roles of optical component feature play in light extraction efficiency (LEE) by adjusting shape and size of the component to obtain maximum optical output power. Since cylinder resin based optical component is commonly seen in COB packaged LED product, such geometry was chosen and optimized in the simulation. In addition, micro lens array was applied to further improve the performance and it has been found that such design is an effective approach to improve LEE of LED.
{"title":"Modeling and simulation of LED optical component to enhance light extraction efficiency","authors":"Bin Xue, P. Lu, P. Ren, Ning Zhang, Zhe Liu, Junxi Wang, Jinmin Li","doi":"10.1109/NUSOD.2016.7547071","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547071","url":null,"abstract":"A simulated model consists of chip-on-board (COB) packaged light emitting diode (LED) array with silicon resin based optical component was built. The principle of the simulation was to investigate the roles of optical component feature play in light extraction efficiency (LEE) by adjusting shape and size of the component to obtain maximum optical output power. Since cylinder resin based optical component is commonly seen in COB packaged LED product, such geometry was chosen and optimized in the simulation. In addition, micro lens array was applied to further improve the performance and it has been found that such design is an effective approach to improve LEE of LED.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124091660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547025
J. Song, B. Zhang, F. Guo
In this paper a photodetector model containing InAs Quantum dots (QDs) and InGaAs Quantum well (QW) is discussed. We discover absorption peaks of InAs QDs and InGaAs QW in the photoluminescence (PL) spectra simulated. The photocurrent spectra shows that the most appropriate wavelength which can get best photocurrent response is 0.86μm and photocurrent response under positive bias is better than the negative bias. It can be seen from the current-voltage curve that current-voltage characteristics of photodetector model have resonant tunneling phenomenon under both the positive bias and negative bias, however the function part is different which is energy level of QDs under the positive bias while energy level of wetting layer under the negative bias.
{"title":"Properties behavior of InAs quantum dots and InGaAs quantum well on the photodetector","authors":"J. Song, B. Zhang, F. Guo","doi":"10.1109/NUSOD.2016.7547025","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547025","url":null,"abstract":"In this paper a photodetector model containing InAs Quantum dots (QDs) and InGaAs Quantum well (QW) is discussed. We discover absorption peaks of InAs QDs and InGaAs QW in the photoluminescence (PL) spectra simulated. The photocurrent spectra shows that the most appropriate wavelength which can get best photocurrent response is 0.86μm and photocurrent response under positive bias is better than the negative bias. It can be seen from the current-voltage curve that current-voltage characteristics of photodetector model have resonant tunneling phenomenon under both the positive bias and negative bias, however the function part is different which is energy level of QDs under the positive bias while energy level of wetting layer under the negative bias.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"314 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114751716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547018
Kuan-Ying Ho, Yuh‐Renn Wu
In this paper, a numerical program for simulating the organic/inorganic hybrid solar cells is developed first by including the tail/interfacial states for carrier transport of the organic materials. Then a typical structure of the PEDOT:PSS/Si nanowire hybrid solar cell is simulated and compared with experimental results. Finally, an efficiency up to 14% is obtained after the optimization.
{"title":"Numerical analysis and optimization of PEDOT:PSS/Si nanowire hybrid solar cells","authors":"Kuan-Ying Ho, Yuh‐Renn Wu","doi":"10.1109/NUSOD.2016.7547018","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547018","url":null,"abstract":"In this paper, a numerical program for simulating the organic/inorganic hybrid solar cells is developed first by including the tail/interfacial states for carrier transport of the organic materials. Then a typical structure of the PEDOT:PSS/Si nanowire hybrid solar cell is simulated and compared with experimental results. Finally, an efficiency up to 14% is obtained after the optimization.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126093223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547014
B. Ni, Z. Wang, R. Zhao, X. Ma, Z. Xing, L. S. Yang, L. J. Huang, Y. Y. Lin, D. B. Zhang
We proposed a humidity sensor based on perfect metamaterial absorber. The sensor is composed of three layers, which are metallic particle array on the top, porous silicon in the middle layer and metallic film at the bottom. It is shown that the resonant wavelength displays significant red-shift with the increasing effective permittivity of porous silicon, which is influenced by the filling fraction of water condensation. Furthermore, the simulation results indicate that the refractive index sensitivity of absorber is high to 249 nm/RIU, which makes our structure be an ideal candidate for evaluating the humidity of environment.
{"title":"Humidity sensor based on perfect metamaterial absorber","authors":"B. Ni, Z. Wang, R. Zhao, X. Ma, Z. Xing, L. S. Yang, L. J. Huang, Y. Y. Lin, D. B. Zhang","doi":"10.1109/NUSOD.2016.7547014","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547014","url":null,"abstract":"We proposed a humidity sensor based on perfect metamaterial absorber. The sensor is composed of three layers, which are metallic particle array on the top, porous silicon in the middle layer and metallic film at the bottom. It is shown that the resonant wavelength displays significant red-shift with the increasing effective permittivity of porous silicon, which is influenced by the filling fraction of water condensation. Furthermore, the simulation results indicate that the refractive index sensitivity of absorber is high to 249 nm/RIU, which makes our structure be an ideal candidate for evaluating the humidity of environment.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124294521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547061
Guanhai Li, Weida Hu, Shaowei Wang, Xiaoshuang Chen, W. Lu
With asymmetric split ring metamaterial periodically placed on top of the niobium nitride (NbN) nanowire meander, we theoretically propose a kind of metal-insulator-metallic (MIM) metamaterial nanocavity to enhance absorbing efficiency and shorten response time of the superconducting NbN nanowire single photon detector (SNSPD) operating at wavelength of 1550 nm. Up to 99.6% of the energy is absorbed and 96.5% dissipated in the nanowire. Meanwhile, taking advantage of this high efficiency absorbing cavity, we implement a more sparse arrangement of the NbN nanowire of the filling factor 0.2, which significantly lessens the nanowire and crucially boosts the response time to be only 40% of reset time in previous evenly spaced meander design. Together with trapped mode resonance, a standing wave oscillation mechanism is presented to explain the high efficiency and broad bandwidth properties. To further demonstrate the advantages of the nanocavity, a four-pixel SNSPD on 10 μm×10 μm area is designed to further reduce 75% reset time while maintaining 70% absorbing efficiency. Utilizing the asymmetric split ring metamaterial, we show a higher efficiency and more rapid response SNSPD configuration to contribute to the development of single photon detectors.
{"title":"An efficiency and response enhanced metamaterial single photon detector","authors":"Guanhai Li, Weida Hu, Shaowei Wang, Xiaoshuang Chen, W. Lu","doi":"10.1109/NUSOD.2016.7547061","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547061","url":null,"abstract":"With asymmetric split ring metamaterial periodically placed on top of the niobium nitride (NbN) nanowire meander, we theoretically propose a kind of metal-insulator-metallic (MIM) metamaterial nanocavity to enhance absorbing efficiency and shorten response time of the superconducting NbN nanowire single photon detector (SNSPD) operating at wavelength of 1550 nm. Up to 99.6% of the energy is absorbed and 96.5% dissipated in the nanowire. Meanwhile, taking advantage of this high efficiency absorbing cavity, we implement a more sparse arrangement of the NbN nanowire of the filling factor 0.2, which significantly lessens the nanowire and crucially boosts the response time to be only 40% of reset time in previous evenly spaced meander design. Together with trapped mode resonance, a standing wave oscillation mechanism is presented to explain the high efficiency and broad bandwidth properties. To further demonstrate the advantages of the nanocavity, a four-pixel SNSPD on 10 μm×10 μm area is designed to further reduce 75% reset time while maintaining 70% absorbing efficiency. Utilizing the asymmetric split ring metamaterial, we show a higher efficiency and more rapid response SNSPD configuration to contribute to the development of single photon detectors.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114967636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547008
G. Chang
We present a theoretical analysis of strain effect on optical gain in biaxially-stressed Ge1-xSnx alloys. The electronic band structure for biaxially-stressed Ge1-xSnx alloys is calculated using deformation potential theory and k·p method. For unstrained Ge1-xSnx alloys, a Sn content of 6.7% is required to achieve a direct bandgap for providing optical gain. The introduction of tensile strain can further soften the requirements for indirect-to-direct bandgap transition, thereby enhancing optical gain. On the other hand, compressive strain significantly increases the energy difference between the Γ- and L-valley conduction band edges, and hence quenching optical gain in Ge1-xSnx alloys.
{"title":"Theoretical analysis of strain effect on optical gain in Ge1−xSnx alloys","authors":"G. Chang","doi":"10.1109/NUSOD.2016.7547008","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547008","url":null,"abstract":"We present a theoretical analysis of strain effect on optical gain in biaxially-stressed Ge<sub>1-x</sub>Sn<sub>x</sub> alloys. The electronic band structure for biaxially-stressed Ge<sub>1-x</sub>Sn<sub>x</sub> alloys is calculated using deformation potential theory and k·p method. For unstrained Ge<sub>1-x</sub>Sn<sub>x</sub> alloys, a Sn content of 6.7% is required to achieve a direct bandgap for providing optical gain. The introduction of tensile strain can further soften the requirements for indirect-to-direct bandgap transition, thereby enhancing optical gain. On the other hand, compressive strain significantly increases the energy difference between the Γ- and L-valley conduction band edges, and hence quenching optical gain in Ge<sub>1-x</sub>Sn<sub>x</sub> alloys.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114194886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547043
Mei Yang, Kai Xia, Xinjie Feng, Yunhan Luo, Jieyuan Tang, Junbin Fang, J. Zhang, Huihui Lu, Jianhui Yu, Yongzhu Chen, Zhe Chen
In this paper, a surface plasmon resonance fiber sensor based on gold nano-column array instead of gold film is designed and optimized. The finite element method (FEM) is used to optimize the sensitivity, resonance wavelength and resonance intensity of the fiber sensor relate to the diameter of the nano-gold column. The optimized sensor has 70 nm gold nano-column coated on a D-shaped single mode fiber. The results show that the average sensitivity reaches 5318 nm/RIU when the environmental refractive index changing from 1.33 RIU to 1.39 RIU, which is much higher than that in conventional surface Plasmon resonance structure.
{"title":"Design and Optimization of Surface Plasmon Resonance Fiber Sensor Based on Gold Nano-Column Array","authors":"Mei Yang, Kai Xia, Xinjie Feng, Yunhan Luo, Jieyuan Tang, Junbin Fang, J. Zhang, Huihui Lu, Jianhui Yu, Yongzhu Chen, Zhe Chen","doi":"10.1109/NUSOD.2016.7547043","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547043","url":null,"abstract":"In this paper, a surface plasmon resonance fiber sensor based on gold nano-column array instead of gold film is designed and optimized. The finite element method (FEM) is used to optimize the sensitivity, resonance wavelength and resonance intensity of the fiber sensor relate to the diameter of the nano-gold column. The optimized sensor has 70 nm gold nano-column coated on a D-shaped single mode fiber. The results show that the average sensitivity reaches 5318 nm/RIU when the environmental refractive index changing from 1.33 RIU to 1.39 RIU, which is much higher than that in conventional surface Plasmon resonance structure.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133307256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7546999
C. Broderick, J. Rorison, I. Marko, S. Sweeney, E. O’Reilly
We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band k·p Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1-x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1-x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain - a first for this emerging material system - and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 μm.
{"title":"GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment","authors":"C. Broderick, J. Rorison, I. Marko, S. Sweeney, E. O’Reilly","doi":"10.1109/NUSOD.2016.7546999","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7546999","url":null,"abstract":"We present a theoretical analysis of the electronic and optical properties of near-infrared dilute bismide quantum well (QW) lasers grown on GaAs substrates. Our theoretical model is based upon a 12-band k·p Hamiltonian which explicitly incorporates the strong Bi-induced modifications of the band structure in pseudomorphically strained GaBixAs1-x alloys. We outline the impact of Bi on the gain characteristics of ideal GaBixAs1-x/(Al)GaAs devices, compare the results of our theoretical calculations to experimental measurements of the spontaneous emission (SE) and optical gain - a first for this emerging material system - and demonstrate quantitative agreement between theory and experiment. Through our theoretical analysis we further demonstrate that this novel class of III-V semiconductor alloys has strong potential for the development of highly efficient GaAs-based semiconductor lasers which promise to deliver uncooled operation at 1.55 μm.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128601176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547046
Md. Samiul Habib, S. Atakaramians, S. Fleming, A. Argyros, B. Kuhlmey
Imaging devices based on wire media (WM) can transmit deep subwavelength information over optically long distances by supporting high spatial frequencies. However, for perfect imaging WM need to be used at the Fabry-Perot resonances (FPRs), to avoid resonances of evanescent waves detrimental to image quality. Another source of artefacts are diffracting ordinary waves, which may add noise to the image. The role of ordinary waves becomes dominant when attempting to image large objects. Here we introduce novel approaches to removing artefacts in WM based hyprlenses so that they can be used for broadband imaging.
{"title":"Removing imaging artefacts in wire media based hyperlenses","authors":"Md. Samiul Habib, S. Atakaramians, S. Fleming, A. Argyros, B. Kuhlmey","doi":"10.1109/NUSOD.2016.7547046","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547046","url":null,"abstract":"Imaging devices based on wire media (WM) can transmit deep subwavelength information over optically long distances by supporting high spatial frequencies. However, for perfect imaging WM need to be used at the Fabry-Perot resonances (FPRs), to avoid resonances of evanescent waves detrimental to image quality. Another source of artefacts are diffracting ordinary waves, which may add noise to the image. The role of ordinary waves becomes dominant when attempting to image large objects. Here we introduce novel approaches to removing artefacts in WM based hyprlenses so that they can be used for broadband imaging.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127035358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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