Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547077
Zhen Che, J. Zhang, Xinyu Yu, Mengyuan Xie, Jianhui Yu, Huihui Lu, Yunhan Luo, Heyuan Guan, Zhe Chen
This study reports on the development of a cost- and time-effective means to optimize a double-sided spherical cap-shaped patterned sapphire substrate (PSS) for highly efficient flip-chip GaN-based light-emitting diodes (LEDs). A simulation is conducted to study how light extraction efficiency (LEE) changed as a function of alteration in the parameters of the unit spherical cap for LEDs that are fabricated on a double-sided spherical cap-shaped PSS. Results show that the optimal double-sided spherical cap-shaped PSS can enhance LEE of flip-chip LEDs by over 5% compared with flip-chip LEDs grown on the optimal double-sided hemispherical PSS.
{"title":"Improvement of light extraction efficiency of GaN-based flip-chip LEDs by a double-sided spherical cap-shaped patterned sapphire substrate","authors":"Zhen Che, J. Zhang, Xinyu Yu, Mengyuan Xie, Jianhui Yu, Huihui Lu, Yunhan Luo, Heyuan Guan, Zhe Chen","doi":"10.1109/NUSOD.2016.7547077","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547077","url":null,"abstract":"This study reports on the development of a cost- and time-effective means to optimize a double-sided spherical cap-shaped patterned sapphire substrate (PSS) for highly efficient flip-chip GaN-based light-emitting diodes (LEDs). A simulation is conducted to study how light extraction efficiency (LEE) changed as a function of alteration in the parameters of the unit spherical cap for LEDs that are fabricated on a double-sided spherical cap-shaped PSS. Results show that the optimal double-sided spherical cap-shaped PSS can enhance LEE of flip-chip LEDs by over 5% compared with flip-chip LEDs grown on the optimal double-sided hemispherical PSS.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129819501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547080
Ke Lin, Yanguang Yu, J. Xi, Qinghua Guo, Jun Tong, Huijun Li
A new fibre-coupled self-mixing laser diode is developed for measurement of Young's modulus. Instead of transmission in free space, the light path is coupled in a fibre, which enables the measuring system easily and feasibly to be installed in many application cases. A specimen made of aluminium alloy 6061 is tested by the system designed. The obtained value of Young's modulus is 70.02 GPa with 0.16% measurement accuracy, showing a high repeatability and a good agreement with the standard values reported in literatures.
{"title":"Young's modulus measurement using fibre-coupled self-mixing laser diode","authors":"Ke Lin, Yanguang Yu, J. Xi, Qinghua Guo, Jun Tong, Huijun Li","doi":"10.1109/NUSOD.2016.7547080","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547080","url":null,"abstract":"A new fibre-coupled self-mixing laser diode is developed for measurement of Young's modulus. Instead of transmission in free space, the light path is coupled in a fibre, which enables the measuring system easily and feasibly to be installed in many application cases. A specimen made of aluminium alloy 6061 is tested by the system designed. The obtained value of Young's modulus is 70.02 GPa with 0.16% measurement accuracy, showing a high repeatability and a good agreement with the standard values reported in literatures.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130072260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547058
K. Jóźwikowski
This paper presents a numerical method for determining the spectral density of noise current in semiconductor structures. Based on P. Handel's theory we have considered a wide range of sources of 1/ f noise caused both by generation-recombination (g-r) and scattering processes. In addition to the shot g-r noise caused by different mechanism, the diffusion noise and temperature fluctuations are also included. Moreover, we have found in HgCdTe nBn long wavelength detectors the place where the noise current is mainly generated.
{"title":"Numerical Langevine-like method for modelling the noise currents in semiconductors","authors":"K. Jóźwikowski","doi":"10.1109/NUSOD.2016.7547058","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547058","url":null,"abstract":"This paper presents a numerical method for determining the spectral density of noise current in semiconductor structures. Based on P. Handel's theory we have considered a wide range of sources of 1/ f noise caused both by generation-recombination (g-r) and scattering processes. In addition to the shot g-r noise caused by different mechanism, the diffusion noise and temperature fluctuations are also included. Moreover, we have found in HgCdTe nBn long wavelength detectors the place where the noise current is mainly generated.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117050200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547012
B. Wang, Xiaodong Wang, Liwei Hou, Wei Xie, Xiaoyao Chen, Yawei Kuang, M. Pan
The noise behaviors of the epitaxial Si:P BIB detectors have been investigated by experimental and theoretical tools. The device structure and testing system are presented in detail. The relationship between the noise spectral density and device temperature is analyzed. It is demonstrated that not only thermal noise but also shot noise are strongly dependent on the device temperature.
{"title":"Study on noise behaviors of epitaxial Si:P blocked-impurity-band detectors","authors":"B. Wang, Xiaodong Wang, Liwei Hou, Wei Xie, Xiaoyao Chen, Yawei Kuang, M. Pan","doi":"10.1109/NUSOD.2016.7547012","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547012","url":null,"abstract":"The noise behaviors of the epitaxial Si:P BIB detectors have been investigated by experimental and theoretical tools. The device structure and testing system are presented in detail. The relationship between the noise spectral density and device temperature is analyzed. It is demonstrated that not only thermal noise but also shot noise are strongly dependent on the device temperature.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123361664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547072
H. D. Lu, F. Guo
We design and simulate three different quantum optoelectronic devices to study the effects of the quantum wells and quantum dots on suppressing the dark current. Through the simulation of the samples, we find that the inhibition ability of quantum wells is stronger than quantum dots at room temperature; at low temperature, quantum dots is stronger than quantum wells. The simulation result shows, when applied bias is about 0.01 V, the dark current of samples A is 9 × 10-13 A; at around 3 V, its dark current is about A. Sample A has already been made of the samples tested, the test found that the actual dark current and dark current simulated are almost the same. At the same time, we tested the PL spectra of samples A to further explain this phenomenon.
{"title":"The quantum wells and quantum dots structure comparison on suppressing dark current","authors":"H. D. Lu, F. Guo","doi":"10.1109/NUSOD.2016.7547072","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547072","url":null,"abstract":"We design and simulate three different quantum optoelectronic devices to study the effects of the quantum wells and quantum dots on suppressing the dark current. Through the simulation of the samples, we find that the inhibition ability of quantum wells is stronger than quantum dots at room temperature; at low temperature, quantum dots is stronger than quantum wells. The simulation result shows, when applied bias is about 0.01 V, the dark current of samples A is 9 × 10-13 A; at around 3 V, its dark current is about A. Sample A has already been made of the samples tested, the test found that the actual dark current and dark current simulated are almost the same. At the same time, we tested the PL spectra of samples A to further explain this phenomenon.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114813481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547040
Jie Yang, Zhe Liu, Bin Xue, Zhou Liao, Junxi Wang, Jinmin Li
The limitation of LED droop effect makes it difficult to realize high speed visible light communication. Therefore the laser diode as the light source of the visible light communication has attracted considerable interest in recent years. However, if we want to achieve visible light communication and high quality lighting applications, we also face some problems, such as strong directivity, high brightness, harm to the human eyes, not enough high bandwidth and so on. In this paper, we analyzed the factors that influence the bandwidth of the laser diode, proposed and simulated laser beam smoothing method and obtained good results.
{"title":"Visible light communication and lighting using laser diodes","authors":"Jie Yang, Zhe Liu, Bin Xue, Zhou Liao, Junxi Wang, Jinmin Li","doi":"10.1109/NUSOD.2016.7547040","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547040","url":null,"abstract":"The limitation of LED droop effect makes it difficult to realize high speed visible light communication. Therefore the laser diode as the light source of the visible light communication has attracted considerable interest in recent years. However, if we want to achieve visible light communication and high quality lighting applications, we also face some problems, such as strong directivity, high brightness, harm to the human eyes, not enough high bandwidth and so on. In this paper, we analyzed the factors that influence the bandwidth of the laser diode, proposed and simulated laser beam smoothing method and obtained good results.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117309221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547015
R. Colom, Alexis Devilez, B. Kuhlmey, B. Stout, N. Bonod
Point-like models are simplified expressions of the polarizability that are commonly employed to study the light scattering by small particles. These models, such as the quasistatic approximation, have played a key role in plasmonics in the understanding of the resonant light interaction with metallic nanoparticles. However, these models fail to predict morphological resonances hosted by dielectric particles. This study aims to derive point like models that can describe dipolar resonances of particles made of either positive or negative permittivity.
{"title":"Polarizability approximations generalized to dielectric nanospheres","authors":"R. Colom, Alexis Devilez, B. Kuhlmey, B. Stout, N. Bonod","doi":"10.1109/NUSOD.2016.7547015","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547015","url":null,"abstract":"Point-like models are simplified expressions of the polarizability that are commonly employed to study the light scattering by small particles. These models, such as the quasistatic approximation, have played a key role in plasmonics in the understanding of the resonant light interaction with metallic nanoparticles. However, these models fail to predict morphological resonances hosted by dielectric particles. This study aims to derive point like models that can describe dipolar resonances of particles made of either positive or negative permittivity.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116007096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547056
Yanhong Wang, Jingzhi Wu
We demonstrate a broadband spectrum absorber using random structures on refractory plasmonic material (Tungsten) resulting in the absorption efficiency over 90% in the wavelength range from 200 nm to 1100 nm. Numerical simulations for the structure with same parameters agree well with the experimental results. Random nanostructures provide more freedom for enhancing absorption and spectrum selectivity than periodic nanostructures.
{"title":"Absorption enhancement and spectrum selectivity of refractory plasmonic nanostructures","authors":"Yanhong Wang, Jingzhi Wu","doi":"10.1109/NUSOD.2016.7547056","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547056","url":null,"abstract":"We demonstrate a broadband spectrum absorber using random structures on refractory plasmonic material (Tungsten) resulting in the absorption efficiency over 90% in the wavelength range from 200 nm to 1100 nm. Numerical simulations for the structure with same parameters agree well with the experimental results. Random nanostructures provide more freedom for enhancing absorption and spectrum selectivity than periodic nanostructures.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129288201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547003
M. Taherkhani, N. Gregersen, J. Mørk, D. McCutcheon, M. Willatzen
The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates.
{"title":"Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot","authors":"M. Taherkhani, N. Gregersen, J. Mørk, D. McCutcheon, M. Willatzen","doi":"10.1109/NUSOD.2016.7547003","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547003","url":null,"abstract":"The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127169651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547053
J. Geng, Prasad Sarangapani, Erik Nelson, Carl Wordclman, B. Browne, T. Kubis, Gerhard Klimeck
The operation of multi-quantum well LEDs is determined by the carrier flow through complex, extended quantum states, the optical recombination between these states and the optical fields in the device. Non-equilibrium Green Function Formalism (NEGF) is the state-of-the-art approach for quantum transport, however when it is applied in its textbook form it is numerically too demanding to handle realistically extended devices. This work introduces a new approach to LED modeling based on a multi-scaled NEGF approach that subdivides the critical device domains and separates the quantum transport from the recombination treatments. First comparisons against experimental data appear to be promising.
{"title":"Multi-scale, multi-physics NEGF quantum transport for nitride LEDs","authors":"J. Geng, Prasad Sarangapani, Erik Nelson, Carl Wordclman, B. Browne, T. Kubis, Gerhard Klimeck","doi":"10.1109/NUSOD.2016.7547053","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547053","url":null,"abstract":"The operation of multi-quantum well LEDs is determined by the carrier flow through complex, extended quantum states, the optical recombination between these states and the optical fields in the device. Non-equilibrium Green Function Formalism (NEGF) is the state-of-the-art approach for quantum transport, however when it is applied in its textbook form it is numerically too demanding to handle realistically extended devices. This work introduces a new approach to LED modeling based on a multi-scaled NEGF approach that subdivides the critical device domains and separates the quantum transport from the recombination treatments. First comparisons against experimental data appear to be promising.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128566458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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