Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547091
Pragati Aashna, K. Thyagarajan
We report the design of a highly efficient broadband electro optic waveguide polarization converter using the rapid adiabatic passage mechanism, a well-known technique in the field of quantum optics. We also introduce a novel design for apodization of electrode pattern to get a ripple free bandwidth spectrum.
{"title":"Highly efficient broadband waveguide based adiabatic polarization converter with apodization","authors":"Pragati Aashna, K. Thyagarajan","doi":"10.1109/NUSOD.2016.7547091","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547091","url":null,"abstract":"We report the design of a highly efficient broadband electro optic waveguide polarization converter using the rapid adiabatic passage mechanism, a well-known technique in the field of quantum optics. We also introduce a novel design for apodization of electrode pattern to get a ripple free bandwidth spectrum.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128714645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to implement laser generation of acoustic waves in liquid efficiently, the optical-acoustic conversion efficiency was calculated and its influenced factors were analyzed, such as, time-domain power distribution, peak power density and pulse width of laser, and optical absorption coefficient of fluid medium. The theoretical analysis shows that: the larger the peak power density is, the larger the conversion efficiency will be; The growth rate of conversion efficiency of Gaussian pulse laser generation of acoustic waves is the largest; With the increasing of optical absorption coefficient or pulse width, the optical-acoustic conversion efficiency can reach a maximum value; Under the same conditions, comparing with triangle and Gaussian laser pulse, the optical-acoustic conversion efficiency is the largest when the power distribution of pulse laser is sinusoid function waveform.
{"title":"Theoretical analysis for conversion efficiency of laser generation of acoustic waves in liquid","authors":"Qiushi Li, Xiaomeng Zhao, Shaoliang Fang, Funian Liang, Zhe Chen","doi":"10.1109/NUSOD.2016.7547087","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547087","url":null,"abstract":"In order to implement laser generation of acoustic waves in liquid efficiently, the optical-acoustic conversion efficiency was calculated and its influenced factors were analyzed, such as, time-domain power distribution, peak power density and pulse width of laser, and optical absorption coefficient of fluid medium. The theoretical analysis shows that: the larger the peak power density is, the larger the conversion efficiency will be; The growth rate of conversion efficiency of Gaussian pulse laser generation of acoustic waves is the largest; With the increasing of optical absorption coefficient or pulse width, the optical-acoustic conversion efficiency can reach a maximum value; Under the same conditions, comparing with triangle and Gaussian laser pulse, the optical-acoustic conversion efficiency is the largest when the power distribution of pulse laser is sinusoid function waveform.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133820880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547050
M. Bahl, E. Heller, J. Ayubi-Moak, W. Ng, R. Scarmozzino, G. Letay, L. Schneider
Presented here are two important devices that cannot be modeled accurately and/or tractably by a single simulation technique. Simulation flows to address each device are presented. The first is a patterned Light Emitting Diode (LED), the optical modeling of which requires a mixed-level simulation approach combining FDTD (or RCWA) and Ray Tracing. The second is a CMOS Image Sensors (CIS), which requires process, optical and electrical simulation techniques.
{"title":"Mixed-level simulation of opto-electronic devices","authors":"M. Bahl, E. Heller, J. Ayubi-Moak, W. Ng, R. Scarmozzino, G. Letay, L. Schneider","doi":"10.1109/NUSOD.2016.7547050","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547050","url":null,"abstract":"Presented here are two important devices that cannot be modeled accurately and/or tractably by a single simulation technique. Simulation flows to address each device are presented. The first is a patterned Light Emitting Diode (LED), the optical modeling of which requires a mixed-level simulation approach combining FDTD (or RCWA) and Ray Tracing. The second is a CMOS Image Sensors (CIS), which requires process, optical and electrical simulation techniques.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133874705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547038
T. Uusitalo, H. Virtanen, M. Dumitrescu
A new figure of merit for single transverse mode operation and an accurate procedure for calculating the coupling coefficient in distributed feedback lasers with laterally-coupled ridge waveguide surface grating structures are introduced. Based on the difference in optical confinement between the pumped and un-pumped regions in the transverse plane, the single transverse mode figure of merit is effective and easy to calculate, while the improved coupling coefficient calculation procedure gives experimentally confirmed better results than the standard calculation approaches.
{"title":"Transverse structure optimization of laterally-coupled ridge waveguide DFB lasers","authors":"T. Uusitalo, H. Virtanen, M. Dumitrescu","doi":"10.1109/NUSOD.2016.7547038","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547038","url":null,"abstract":"A new figure of merit for single transverse mode operation and an accurate procedure for calculating the coupling coefficient in distributed feedback lasers with laterally-coupled ridge waveguide surface grating structures are introduced. Based on the difference in optical confinement between the pumped and un-pumped regions in the transverse plane, the single transverse mode figure of merit is effective and easy to calculate, while the improved coupling coefficient calculation procedure gives experimentally confirmed better results than the standard calculation approaches.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128224553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547090
Yen‐Chang Chen, T. Kung, Yuh‐Renn Wu
A laser diode(LD) structure is simulated by the Poisson, drift-diffusion, and Schrodinger equation solver and the Hemholtz equation solver. The gain curve has been optimized by optimizing the comparisons for different numbers of quantum well(QW), different indium composition in the QW and different size of the guiding layer.
{"title":"Optimization of the gain curve of the InGaN blue light laser diode","authors":"Yen‐Chang Chen, T. Kung, Yuh‐Renn Wu","doi":"10.1109/NUSOD.2016.7547090","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547090","url":null,"abstract":"A laser diode(LD) structure is simulated by the Poisson, drift-diffusion, and Schrodinger equation solver and the Hemholtz equation solver. The gain curve has been optimized by optimizing the comparisons for different numbers of quantum well(QW), different indium composition in the QW and different size of the guiding layer.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131019726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547023
Arpit Khandelwal, Syed Azeemuddin, J. Nayak
The moving population inversion gratings formed due to spatial hole burning inside a semiconductor ring laser gyroscope causes nonlinear coupling of the counter-traveling modes. We mathematically demonstrate this phenomenon using Perturbation Theory and calculate the limit imposed by it on the sensitivity of inertial rotation.
{"title":"Mathematical model of nonlinear coupling and its effect on rotation sensitivity of semiconductor ring laser gyroscope","authors":"Arpit Khandelwal, Syed Azeemuddin, J. Nayak","doi":"10.1109/NUSOD.2016.7547023","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547023","url":null,"abstract":"The moving population inversion gratings formed due to spatial hole burning inside a semiconductor ring laser gyroscope causes nonlinear coupling of the counter-traveling modes. We mathematically demonstrate this phenomenon using Perturbation Theory and calculate the limit imposed by it on the sensitivity of inertial rotation.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133846464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547093
K. Catchpole
A tandem arrangement of high and low bandgap solar cells is a promising way to achieve high efficiency solar energy conversion at low cost. Four-terminal tandems, in which each cell is connected independently, avoid the need for current matching between the top and bottom cells, giving greater design flexibility. We perform optical and electrical modelling of the efficiency potential for perovskite/silicon tandems, and show that efficiencies of over 30% are realistically possible. We further show that optimizing the transparent conducting layers and applying a grid are important steps to achieving high efficiency. Finally we demonstrate an efficiency of over 20% for a perovskite/silicon tandem in a four-terminal stack, and 23% in a reflective configuration.
{"title":"Optical and electrical modelling for high efficiency perovskite/silicon tandem solar cells","authors":"K. Catchpole","doi":"10.1109/NUSOD.2016.7547093","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547093","url":null,"abstract":"A tandem arrangement of high and low bandgap solar cells is a promising way to achieve high efficiency solar energy conversion at low cost. Four-terminal tandems, in which each cell is connected independently, avoid the need for current matching between the top and bottom cells, giving greater design flexibility. We perform optical and electrical modelling of the efficiency potential for perovskite/silicon tandems, and show that efficiencies of over 30% are realistically possible. We further show that optimizing the transparent conducting layers and applying a grid are important steps to achieving high efficiency. Finally we demonstrate an efficiency of over 20% for a perovskite/silicon tandem in a four-terminal stack, and 23% in a reflective configuration.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116303751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547005
M. Kantner, U. Bandelow, T. Koprucki, H. Wunsche
Single semiconductor quantum dots embedded in p-i-n diodes have been demonstrated to operate as electrically driven single-photon sources. By means of numerical simulations one can explore the limitations in the carrier injection dynamics and further improve the device technology. We propose a comprehensive modeling approach coupling the macroscopic transport of bulk carriers with an open quantum system to describe the essential physics of such devices on multiple scales.
{"title":"Modeling and simulation of injection dynamics for quantum dot based single-photon sources","authors":"M. Kantner, U. Bandelow, T. Koprucki, H. Wunsche","doi":"10.1109/NUSOD.2016.7547005","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547005","url":null,"abstract":"Single semiconductor quantum dots embedded in p-i-n diodes have been demonstrated to operate as electrically driven single-photon sources. By means of numerical simulations one can explore the limitations in the carrier injection dynamics and further improve the device technology. We propose a comprehensive modeling approach coupling the macroscopic transport of bulk carriers with an open quantum system to describe the essential physics of such devices on multiple scales.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122221467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547006
S. Limpert, S. Bremner, G. Conibeer, N. Anttu, H. Linke
Finite element modelling (FEM) is used to show that the addition of Au contacts to a single horizontal InAs/InP heterostructure nanowire substantially alters the nanowire's optical properties in comparison to the uncontacted case. It is found that the addition of contacts can increase absorption efficiency, decrease scattering efficiency and shift the location of absorption within the nanowire. Localized surface plasmon resonances are found to develop at nanowire/contact interfaces at infrared wavelengths and contribute to the alteration of the optical response of the nanowire.
{"title":"Absorption in and scattering from single horizontal Au-contacted InAs/InP heterostructure nanowires","authors":"S. Limpert, S. Bremner, G. Conibeer, N. Anttu, H. Linke","doi":"10.1109/NUSOD.2016.7547006","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547006","url":null,"abstract":"Finite element modelling (FEM) is used to show that the addition of Au contacts to a single horizontal InAs/InP heterostructure nanowire substantially alters the nanowire's optical properties in comparison to the uncontacted case. It is found that the addition of contacts can increase absorption efficiency, decrease scattering efficiency and shift the location of absorption within the nanowire. Localized surface plasmon resonances are found to develop at nanowire/contact interfaces at infrared wavelengths and contribute to the alteration of the optical response of the nanowire.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127639168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547001
C. Jagadish
The high refractive index of III-V semiconductors results in strong waveguiding of light in nanowires, despite their small cross-section dimensions. We will discuss how these waveguiding properties can be used to design nanowire lasers and solar cells with functionalities not possible in conventional, planar devices.
{"title":"Nanowire lasers and solar cells","authors":"C. Jagadish","doi":"10.1109/NUSOD.2016.7547001","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547001","url":null,"abstract":"The high refractive index of III-V semiconductors results in strong waveguiding of light in nanowires, despite their small cross-section dimensions. We will discuss how these waveguiding properties can be used to design nanowire lasers and solar cells with functionalities not possible in conventional, planar devices.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"199 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132292308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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