Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547042
Soo-Min Park, Young-Gu Ju
A line source consisting of a laser, a fiber-like waveguide, phosphor and a holed cavity is suggested. The simulation demonstrated that this type of line source provided small emission thickness and good uniformity with reasonable energy efficiency.
{"title":"Uniform line source using a holed cavity and a laser","authors":"Soo-Min Park, Young-Gu Ju","doi":"10.1109/NUSOD.2016.7547042","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547042","url":null,"abstract":"A line source consisting of a laser, a fiber-like waveguide, phosphor and a holed cavity is suggested. The simulation demonstrated that this type of line source provided small emission thickness and good uniformity with reasonable energy efficiency.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123558128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547000
A. Sokół, R. Sarzała
We present the self-consistent numerical model for simulation of multi-mode operation of optically pumped semiconductor disk lasers. We use this model to analyze carrier and power losses in GaN-, GaAs- and GaSb-based structures operating at 0.4, 1.3 and 2.8 μm, respectively.
{"title":"Simulation of carrier and power losses in semiconductor disk lasers","authors":"A. Sokół, R. Sarzała","doi":"10.1109/NUSOD.2016.7547000","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547000","url":null,"abstract":"We present the self-consistent numerical model for simulation of multi-mode operation of optically pumped semiconductor disk lasers. We use this model to analyze carrier and power losses in GaN-, GaAs- and GaSb-based structures operating at 0.4, 1.3 and 2.8 μm, respectively.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124011443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547002
M. Kantner, U. Bandelow, T. Koprucki, J. Schulze, A. Strittmatter, H. Wunsche
Current injection into single quantum dots embedded in vertical pn-diodes featuring oxide apertures is essential to the technological realization of single-photon sources. This requires efficient electrical pumping of sub-micron sized regions under pulsed excitation to achieve control of the carrier population of the desired quantum dots. We show experimental and theoretical evidence for a rapid lateral spreading of the carriers after passing the oxide aperture in the conventional p-i-n-design in the low-injection regime suitable for single-photon emitters. By an alternative design employing p-doping up to the oxide aperture the current spreading can be suppressed resulting in an enhanced current confinement and increased injection efficiencies.
{"title":"On current injection into single quantum dots through oxide-confined pn-diodes","authors":"M. Kantner, U. Bandelow, T. Koprucki, J. Schulze, A. Strittmatter, H. Wunsche","doi":"10.1109/NUSOD.2016.7547002","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547002","url":null,"abstract":"Current injection into single quantum dots embedded in vertical pn-diodes featuring oxide apertures is essential to the technological realization of single-photon sources. This requires efficient electrical pumping of sub-micron sized regions under pulsed excitation to achieve control of the carrier population of the desired quantum dots. We show experimental and theoretical evidence for a rapid lateral spreading of the carriers after passing the oxide aperture in the conventional p-i-n-design in the low-injection regime suitable for single-photon emitters. By an alternative design employing p-doping up to the oxide aperture the current spreading can be suppressed resulting in an enhanced current confinement and increased injection efficiencies.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128971231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547045
Mingjie Li, G. Xing, Xinfeng Liu, T. Sum
Organic-inorganic halide perovskites (e.g., CH3NH3PbI3) possesses exceptional optoelectronic properties for photovoltaics. Amazingly, this material system also has outstanding optical gain properties ideal for lasing applications. Two years had elapsed since the discovery of amplified spontaneous emission and lasing from these perovskite thin films and nanostructures. Herein, we briefly review its development, the state-of-the-art and the prospective outlook of this new lasing medium.
{"title":"Lasing from halide perovskites","authors":"Mingjie Li, G. Xing, Xinfeng Liu, T. Sum","doi":"10.1109/NUSOD.2016.7547045","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547045","url":null,"abstract":"Organic-inorganic halide perovskites (e.g., CH3NH3PbI3) possesses exceptional optoelectronic properties for photovoltaics. Amazingly, this material system also has outstanding optical gain properties ideal for lasing applications. Two years had elapsed since the discovery of amplified spontaneous emission and lasing from these perovskite thin films and nanostructures. Herein, we briefly review its development, the state-of-the-art and the prospective outlook of this new lasing medium.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130082683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547101
N. Sun, Ming-Yu Tsai, T. He, Jung-Sheng Chiang, G. Evans, J. Butler
The reflectivity of forty-grating sections consisting of two grating periods is simulated. Close difference of two gratings periods causes similarity of the reflectivity of forty-gratings and single gratings except for the phase shift phenomenon.
{"title":"Multi-grating sections of dielectric waveguides","authors":"N. Sun, Ming-Yu Tsai, T. He, Jung-Sheng Chiang, G. Evans, J. Butler","doi":"10.1109/NUSOD.2016.7547101","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547101","url":null,"abstract":"The reflectivity of forty-grating sections consisting of two grating periods is simulated. Close difference of two gratings periods causes similarity of the reflectivity of forty-gratings and single gratings except for the phase shift phenomenon.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116254015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547084
A. Thomson, M. Ernst, I. Haedrich
PV cell and module manufactures optimise their products according to standard test conditions. The key parameter for financing of a solar farm is yield under field or realistic conditions. Field testing modules is expensive and time consuming. Hence we develop a methodology for simulating PV module yield based on the optical, thermal and electrical properties of the components and their stack ands layout. With our procedure we will model optical, thermal and electrical losses under realistic conditions for standard, half cell and encapsulant free modules in different locations. For now we quantify the losses for a standard module installed in Melbourne on a cloudy day. The largest loss factor is electrical, as the module voltage decreases with low irradiance.
{"title":"Location specific PV yield and loss simulation based on module stack and layout","authors":"A. Thomson, M. Ernst, I. Haedrich","doi":"10.1109/NUSOD.2016.7547084","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547084","url":null,"abstract":"PV cell and module manufactures optimise their products according to standard test conditions. The key parameter for financing of a solar farm is yield under field or realistic conditions. Field testing modules is expensive and time consuming. Hence we develop a methodology for simulating PV module yield based on the optical, thermal and electrical properties of the components and their stack ands layout. With our procedure we will model optical, thermal and electrical losses under realistic conditions for standard, half cell and encapsulant free modules in different locations. For now we quantify the losses for a standard module installed in Melbourne on a cloudy day. The largest loss factor is electrical, as the module voltage decreases with low irradiance.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122500260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7546998
H. Ryu
GaN-based blue laser diodes (LDs) can exhibit peculiar temperature characteristics such as quite a high characteristics temperature (T0) or even negative T0. The author investigates the temperature-dependent device characteristics of blue LDs having InGaN double quantum-well (QW) structures using numerical simulations. As the n-type doping concentration of a barrier layer between QWs increases, negative T0 can be observed, which is found to originate from the increase of gain at the n-side QW with temperature as a result of the improvement of hole transport in QWs with temperature.
{"title":"Numerical investigation on the negative characteristic temperature of InGaN blue laser diodes","authors":"H. Ryu","doi":"10.1109/NUSOD.2016.7546998","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7546998","url":null,"abstract":"GaN-based blue laser diodes (LDs) can exhibit peculiar temperature characteristics such as quite a high characteristics temperature (T0) or even negative T0. The author investigates the temperature-dependent device characteristics of blue LDs having InGaN double quantum-well (QW) structures using numerical simulations. As the n-type doping concentration of a barrier layer between QWs increases, negative T0 can be observed, which is found to originate from the increase of gain at the n-side QW with temperature as a result of the improvement of hole transport in QWs with temperature.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"3 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125694175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547030
A. Serebryannikov, A. Lakhtakia, E. Ozbay
We simulated the transmission of terahertz waves through a single metasurface and two coupled metasurfaces that comprise H-shaped subwavelength resonators made of InAs, a magnetically tunable material. The magnetostatic field was varied from 0 to 1 T. The obtained results demonstrate that the substrate permittivity and the coupling of metasurfaces can significantly affect filtering performance as well as the possibility of tuning for different orientations of the magnetostatic field.
{"title":"Single and coupled metasurfaces for tunable polarization-sensitive terahertz filters","authors":"A. Serebryannikov, A. Lakhtakia, E. Ozbay","doi":"10.1109/NUSOD.2016.7547030","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547030","url":null,"abstract":"We simulated the transmission of terahertz waves through a single metasurface and two coupled metasurfaces that comprise H-shaped subwavelength resonators made of InAs, a magnetically tunable material. The magnetostatic field was varied from 0 to 1 T. The obtained results demonstrate that the substrate permittivity and the coupling of metasurfaces can significantly affect filtering performance as well as the possibility of tuning for different orientations of the magnetostatic field.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128486295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547086
G. Wild, S. Richardson, S. Hinckley
A previous numerical model was used to simulate the interrogation of optical fiber Bragg grating sensing signals. The noise in the optoelectronic receiver, a photodiode, and transimpedance amplifier, has been incorporated into the model. The simulation results have enabled the comparison of various interrogation systems for optical fiber Bragg grating sensors. That is, utilizing the same sensing element and the same optoelectronic receiver, the choice between either edge filter detection or power detection can be compared and contrasted.
{"title":"Numerical simulation of optoelectronic sensors: Fiber Bragg grating and noise","authors":"G. Wild, S. Richardson, S. Hinckley","doi":"10.1109/NUSOD.2016.7547086","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547086","url":null,"abstract":"A previous numerical model was used to simulate the interrogation of optical fiber Bragg grating sensing signals. The noise in the optoelectronic receiver, a photodiode, and transimpedance amplifier, has been incorporated into the model. The simulation results have enabled the comparison of various interrogation systems for optical fiber Bragg grating sensors. That is, utilizing the same sensing element and the same optoelectronic receiver, the choice between either edge filter detection or power detection can be compared and contrasted.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130778289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547034
Yulian Li, Jun Gao, Xuejia Lu
An effective strategy to avoid the Ag antioxidized problem of the ultra-narrow dualband plasmonic sensors was proposed and demonstrated theoretically by introducing a thin MgF2 layer above the upmost Ag grating surface. The two peaks have different response to the refractive index of the surrounding medium. The resonant wavelength of the sensor is easily tunable via geometrical scaling of the sensor structure and thickness of the MgF2 layer. The sensor is ultrasensitive to the refractive index of the environmental dielectric with the sensitivity as high as 450nm/RIU. This dualband antioxidized plasmonic metamaterial optical absorber has great potential to improve the performance of sensors in practical applications.
{"title":"An effective antioxidized strategy for Ag based film-dierlectric-metal plasmonic sensor","authors":"Yulian Li, Jun Gao, Xuejia Lu","doi":"10.1109/NUSOD.2016.7547034","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547034","url":null,"abstract":"An effective strategy to avoid the Ag antioxidized problem of the ultra-narrow dualband plasmonic sensors was proposed and demonstrated theoretically by introducing a thin MgF2 layer above the upmost Ag grating surface. The two peaks have different response to the refractive index of the surrounding medium. The resonant wavelength of the sensor is easily tunable via geometrical scaling of the sensor structure and thickness of the MgF2 layer. The sensor is ultrasensitive to the refractive index of the environmental dielectric with the sensitivity as high as 450nm/RIU. This dualband antioxidized plasmonic metamaterial optical absorber has great potential to improve the performance of sensors in practical applications.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133713230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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