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1978 8th European Microwave Conference最新文献

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The Design of Multipole Filters for use in Millimetre Wave Image Line Integrated Circvits 毫米波像线集成电路中多极滤波器的设计
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332506
M. Aylward, N. Williams
The design of a class of filters for use in millimetre wave integrated circuits is described. These filters use resonant rings of dielectric image line, the theory of which is briefly described. The synthesis of the circuit elements necessary to realise the filter is explained and a practical tuning element is described. Several theoretical design examples are given and the results from an experimental filter are given.
介绍了一种用于毫米波集成电路的滤波器的设计。这些滤波器采用介电像线谐振环,并简要介绍了其原理。说明了实现该滤波器所需的电路元件的合成,并描述了一种实用的调谐元件。给出了几个理论设计实例和一个实验滤波器的结果。
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引用次数: 2
Sampling Cathode-Ray Tube Device for Microwave Waveform Analysis 用于微波波形分析的阴极射线管采样装置
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332583
K. Fujisawa, Yukio Yamamoto, Tetsuji Ito, Toru Iwai
This device is to visualize waveform analysis up to mm-waves. The operation is based on two distinctive principles. The first is the sampling of the waveform by a repeated electron beam pulse synchronous with it. The second is the usage of a negative feed back system, which cancells the r.f. deflection of the electron beam pulse by a d.c.control voltage, the latter being proportional to the sampled wave-amplitude and thus giving information to it. The waveform is reproduced by plotting the above control voltage versus the phase position of the sampling. An experimental tube was designed and built to be used up to K-band. It was tested in X-band, and showed good characteristics.
这个装置是可视化的波形分析,直到毫米波。该操作基于两个不同的原则。首先是用与之同步的重复电子束脉冲对波形进行采样。第二种是负反馈系统的使用,它通过直流控制电压抵消电子束脉冲的射频偏转,后者与采样波幅成正比,从而给它提供信息。通过绘制上述控制电压与采样相位位置的关系,可以再现该波形。设计并制造了一个实验管,使其使用到k波段。在x波段进行了测试,显示出良好的性能。
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引用次数: 1
Gbit/s-Pulse Propagation in Microstrip Discontinuities 微带不连续中的Gbit/s脉冲传输
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332565
W. Menzel
In the last years, a variety of microstrip discontinuities have been analysed using a waveguide model with frequency dependent parameters. This contribution shows an application of these calculation techniques to fast digital signal analysis of baseband and carrier frequency circuits in microstrip. The signals are described by their Fourier coefficients, and the circuit response is calculated using the frequency dependent reflection and transmission properties of the microstrip circuit. A number of examples are given, together with experimental results, showing a close agreement between theory and experiment.
在过去的几年中,各种微带不连续已被分析使用波导模型与频率相关的参数。这一贡献显示了这些计算技术在微带基带和载频电路的快速数字信号分析中的应用。信号用它们的傅里叶系数来描述,并利用微带电路的频率相关反射和传输特性来计算电路响应。文中给出了若干实例,并给出了实验结果,表明理论与实验结果非常吻合。
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引用次数: 1
Analytical Study of Helical Latching Ferrite Phaser Structure 螺旋锁存铁氧体相位器结构的分析研究
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332491
K. Ivanov
The propagation of circularly symmetrical mode in an infinitely long thin-wire helix, wound on a latching ferrite cylinder, magnetised azimuthally to remanence and surrounded by homogeneous, isotropic, lossless dielectric and perfectly conducting metallic shield is studied analytically. The characteristic equation of the system, involving the normalized phase constant, structure geometry, parameters of both media and the frequency is derived in terms of modified Bessel functions and Kummer confluent hypergeometric functions. The nonreciprocal phase characteristics of the structure, assuming Marconi latching ferrite L1A and thermal conducting dielectrics are presented in normalized form for opposite directions of remanent flux, showing application of the system as practical remanent latching phaser.
本文分析研究了绕在锁存铁氧体圆柱上的无限长细线螺旋中圆对称模式的传播,该螺旋由均匀的、各向同性的、无损的介质和完全导电的金属屏蔽体包围。用修正的贝塞尔函数和Kummer合流超几何函数导出了包含归一化相常数、结构几何、介质参数和频率的系统特征方程。假设马可尼锁存铁氧体L1A和导热电介质在剩余磁通方向相反的情况下,该结构的非互易相位特性以归一化形式呈现,显示了该系统作为实际剩余锁存相器的应用。
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引用次数: 1
A K-Band ION Implanted GaAs FET 一种k波段离子注入的砷化镓场效应晶体管
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332579
Chiung-Tung Li, Philip T. Chen, Patrick H. Wang
An ion-implanted, 0.5 micron gate GaAs MESFET designed for K-band (18-26 GHz) applications is described in this paper. Silicon implantation was used to form both the channel and the N+ contact layers. The device has 9.8 dB gain at 18 GHz and its extrapolated fmax is about 80 GHz. At 25 GHz, it achieved 12.1 dBm output power as a tunable oscillator, and 11 dBmoutput power with 16 dB gain as a narrow band reflection type of amplifier.
本文介绍了一种用于k波段(18-26 GHz)应用的离子注入、0.5微米栅极GaAs MESFET。通过注入硅形成通道层和N+接触层。该器件在18 GHz时有9.8 dB增益,其外推fmax约为80 GHz。在25 GHz时,作为可调谐振荡器,它的输出功率为12.1 dBm,作为窄带反射型放大器,输出功率为11 dBm,增益为16 dB。
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引用次数: 0
New Microstrip Transmission Lines for Microwave Integrated Circuits 微波集成电路用新型微带传输线
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332522
K. Sachse, A. Sawicki
The paper discusses the properties of new microstrip transmission lines using a slot in the ground-plane. These lines have high characteristic impedance and their attenuation and frequency dispersion as well are small. A very tightly coupled cross-section of microstrip lines may be constructed using the new structures of coupled-lines. The numerical computations of the characteristic impedance and phase velocity of the single-and coupled-lines are given. In the variational method an approximated functions of the charge density on the strip and the potential in the slot in order to fulfil of the complicated boundary conditions caused by the slot and the multi-layered dielectric are evaluated. Then the potential distribution on the strip and the capacitance are computed using the variational expression in the Fourier-transformed domain. The applications of the new microstrip lines in MIC and some experimental results are presented.
本文讨论了采用地平面槽的新型微带传输线的性能。这些线路的特性阻抗高,衰减和频散也小。利用这种新的耦合线结构,可以构造出非常紧密耦合的微带线截面。给出了单线和耦合线的特性阻抗和相速度的数值计算。在变分方法中,为了满足狭缝和多层介质引起的复杂边界条件,计算了狭缝中电荷密度和电势的近似函数。然后利用傅里叶变换域的变分表达式,计算出了电势在条带上的分布和电容。介绍了新型微带线在MIC中的应用及一些实验结果。
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引用次数: 3
Reliability Investigations of GaAs Power FETs with Aluminium Gate Metallisation 铝栅金属化GaAs功率场效应管的可靠性研究
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332581
P. White, B. L. Hewett, J. Turner
Accelerated life tests on GaAs power FETs have revealed two failure mechanisms. The first, associated with Au/Al interaction at the bonding pads, is gate void formation for which the estimated activation energy of 2eV in air ambient gives an extrapolated MTTF at 70°C channel temperature in excess of 108 hours. Devices with Au bond wires to the gate bonding pads show no void formation but failure is associated with excessive drain metal migration. Estimated MTTF at 70°C channel temperature is comparable to the gate failure mode. A detailed comparison of the two failure modes and conclusions as to which dominates under normal operating conditions await the outcome of constant stress tests on devices with both wire bond configurations.
GaAs功率场效应管的加速寿命试验揭示了两种失效机制。首先,与焊盘处Au/Al相互作用有关的是栅极空洞的形成,在空气环境中估计的2eV活化能给出了在70°C通道温度下超过108小时的外推MTTF。在栅极焊盘上有金键合线的器件没有空洞形成,但故障与过量的漏极金属迁移有关。在70°C通道温度下估计的MTTF与栅极失效模式相当。两种失效模式的详细比较,以及在正常工作条件下哪种失效模式占主导地位的结论,有待于对两种线连接结构的设备进行持续应力测试的结果。
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引用次数: 7
Improved Microwave Radiometry for Remote Sensing 用于遥感的改进微波辐射测量
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332557
A. Leber, T. Flattau
Significant improvements in the gain stability and overall performance of microwave radiometers have been achieved with the use of a selfbalancing gain modulation technique. This technique, in combination with automatic thermal calibration, is particularly well suited for remote sensing radiometric applications. The essential features of such a radiometer, including typical data obtained from a spaceborne satellite, is presented to show the instrument's utility.
采用自平衡增益调制技术,大大提高了微波辐射计的增益稳定性和整体性能。这种技术与自动热校准相结合,特别适合遥感辐射测量应用。介绍了这种辐射计的基本特征,包括从星载卫星获得的典型数据,以显示该仪器的实用性。
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引用次数: 1
Theoretical and Experimental Studies of Inductive Grids 感应网格的理论与实验研究
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332638
R. C. M. Phedran, L. Botten, P. Bliek, R. Deleuil, D. Maystre
We present a rigorous theory for the diffraction by inductive grids, having circular apertures placed in doubly-periodic fashion in a thick, perfectly-conducting screen. We compare the theory with measurements made at millimetric wavelengths, both for normal incidence and off-axis (in the region of strong polarization effects). We discuss the conclusions to be drawn from the calculations and measurements on the use of such grids as low-pass filters, particularly in relation to their possible application in the field of solar energy.
我们提出了一个严格的理论,通过感应网格衍射,圆形孔径放置在双周期的方式,厚,完美导电屏。我们将该理论与毫米波长的测量结果进行了比较,包括正常入射和离轴(在强偏振效应区域)。我们讨论了从使用这种栅格作为低通滤波器的计算和测量中得出的结论,特别是关于它们在太阳能领域的可能应用。
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引用次数: 2
Application of Two Ground-Based Microwave Radiometers for Indirect Determination of the Temperature Profile of the Atmospheric Boundary Layer 两台地基微波辐射计在间接测定大气边界层温度廓线中的应用
Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332560
B. Schonwald
Angular measurements of brightness temperature in the frequency range between 50 GHz and 70 GHz reproduce information of the vertical temperature profile in the atmosphere. It will be measured with two radiometers. One works in the frequency range of 58 GHz and includes the lower 700 meters height (null-balancing Dicke receiver). The second works in the frequency range of 54.5 GHz (Dicke receiver using gain modulation for balancing) and includes the lower 1500 meters height. Both radiometers with their different techniques are compared to stability, noise and sensitivity. It is given a short review of two mathematical methods for determining the temperature profile out of radiation measurements.
在50 GHz和70 GHz频率范围内的亮度温度角测量再现了大气中垂直温度剖面的信息。它将用两个辐射计来测量。一种工作在58 GHz的频率范围内,包括较低的700米高度(零平衡迪克接收机)。第二种工作在54.5 GHz的频率范围内(Dicke接收机使用增益调制进行平衡),包括较低的1500米高度。采用不同技术的两种辐射计在稳定性、噪声和灵敏度方面进行了比较。本文简要介绍了测定辐射测量温度分布的两种数学方法。
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引用次数: 0
期刊
1978 8th European Microwave Conference
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