Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332636
A. Vanoverschelde, G. Salmer
The capabilities of Baritt diodes in the millimeter wave range and the effects of the electron velocity versus field dependence in GaAs and InP are investigated. The influences of doping profile and material parameters are analysed by means of an exact large signal simulation. At millimeter frequencies, the Si Baritt r.f. power remains limited due to the small value of the negative resistance. This resistance is greatly improved by using GaAs or InP N+P N N+ structures; thus, better available power and efficiency can be expected. The InP material is found to be better than GaAs, because the r.f. levels can be higher and the diffusion phenomenon effect is smaller.
{"title":"Large Signal Calculations of Si, GaAs and InP Baritt Diode Performances in X and Q Band","authors":"A. Vanoverschelde, G. Salmer","doi":"10.1109/EUMA.1978.332636","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332636","url":null,"abstract":"The capabilities of Baritt diodes in the millimeter wave range and the effects of the electron velocity versus field dependence in GaAs and InP are investigated. The influences of doping profile and material parameters are analysed by means of an exact large signal simulation. At millimeter frequencies, the Si Baritt r.f. power remains limited due to the small value of the negative resistance. This resistance is greatly improved by using GaAs or InP N+P N N+ structures; thus, better available power and efficiency can be expected. The InP material is found to be better than GaAs, because the r.f. levels can be higher and the diffusion phenomenon effect is smaller.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131191643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332499
Y. Le Tron, S. Barvet, J. Obregon
The association of a Ga As Field Effect Transistors (FET) and a Single Crystal Ferrimagnetic Garnets (YIG) has brought about the realization of oscillators electronically tunable in very broad bands. This paper presents the theoretical conception and the first experimental results of two types of FET-YIG oscillators. The first device is made up of a FET with a simple reactive inductance in the gate and tuned by a YIG sphere in the source. Its output power is 5 mW in the 7 - 11 GHz band. In the second device, the reactive inductance in the gate is replaced by a second YIG sphere. Tuned by the same magnetic circuit, these two YIGs have a theoretical widening of the oscillation zone towards a band of several octaves. Practical results illustrate this possibility in the 4 - 15 GHz range. The many applications of the Solid state tuned oscillators (sweepers, super heterodyne microwave receivers, spectrum analysers, etc...) give a clear indication of the interest of these first results.
{"title":"Broadband YIG Tuned FET Oscillators","authors":"Y. Le Tron, S. Barvet, J. Obregon","doi":"10.1109/EUMA.1978.332499","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332499","url":null,"abstract":"The association of a Ga As Field Effect Transistors (FET) and a Single Crystal Ferrimagnetic Garnets (YIG) has brought about the realization of oscillators electronically tunable in very broad bands. This paper presents the theoretical conception and the first experimental results of two types of FET-YIG oscillators. The first device is made up of a FET with a simple reactive inductance in the gate and tuned by a YIG sphere in the source. Its output power is 5 mW in the 7 - 11 GHz band. In the second device, the reactive inductance in the gate is replaced by a second YIG sphere. Tuned by the same magnetic circuit, these two YIGs have a theoretical widening of the oscillation zone towards a band of several octaves. Practical results illustrate this possibility in the 4 - 15 GHz range. The many applications of the Solid state tuned oscillators (sweepers, super heterodyne microwave receivers, spectrum analysers, etc...) give a clear indication of the interest of these first results.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"68 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129541633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332504
R. Hill
Omni-directional aerials are required extensively for a variety of microwave systems such as in aircraft distance measuring equipment, side-lobe suppression of aerials for radar and radar transponders. The omni-directional aerial described in this paper provides extremely constant azimuth coverage with E vertical polarisation and can be manufactured cheaply from a single printed circuit panel. It can be designed to meet a wide range of elevation beamwidth and pointing angle requirements with high efficiency.
{"title":"A Twin Line Omni-Directional Aerial Configuration","authors":"R. Hill","doi":"10.1109/EUMA.1978.332504","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332504","url":null,"abstract":"Omni-directional aerials are required extensively for a variety of microwave systems such as in aircraft distance measuring equipment, side-lobe suppression of aerials for radar and radar transponders. The omni-directional aerial described in this paper provides extremely constant azimuth coverage with E vertical polarisation and can be manufactured cheaply from a single printed circuit panel. It can be designed to meet a wide range of elevation beamwidth and pointing angle requirements with high efficiency.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127359004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332584
V. Vuntesmery
It has been shown theoretical and experimental, that unlike microwave power flow semiconductor transformers, the ferromagnetic film transformers operating in ferromagnetic resonance regime have to perform reactive discontinuity themselves. The interaction of the ferromagnetic film galvanomagnetic detector placed parallel to the rectangular waveguide wide wall, with a dominant mode was examined. It has been shown, that direct voltage taking off the ferromagnetic film is proportional to active microwave power passing through the waveguide if the value of the external magnetic field is equal to its resonance value. The results of the experimental research at S band for 80Ni - 20Fe magnetic films are given. The independence of the direct voltage on the unmatched load shifted along the waveguide is confirmed.
{"title":"Application of Galvanomagnetic Detectors Based on Ferro-Magnetic Films to the Measurement of Microwave Power Flow in Unmatched Waveguide","authors":"V. Vuntesmery","doi":"10.1109/EUMA.1978.332584","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332584","url":null,"abstract":"It has been shown theoretical and experimental, that unlike microwave power flow semiconductor transformers, the ferromagnetic film transformers operating in ferromagnetic resonance regime have to perform reactive discontinuity themselves. The interaction of the ferromagnetic film galvanomagnetic detector placed parallel to the rectangular waveguide wide wall, with a dominant mode was examined. It has been shown, that direct voltage taking off the ferromagnetic film is proportional to active microwave power passing through the waveguide if the value of the external magnetic field is equal to its resonance value. The results of the experimental research at S band for 80Ni - 20Fe magnetic films are given. The independence of the direct voltage on the unmatched load shifted along the waveguide is confirmed.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127702802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332637
S. Longley, P. L. Booth
The fundamental frequency of a pulsed TRAPATT S-band oscillator on an alumina MIC has been tuned electronically by changing individually the loading of the second and third harmonic terminations. This was realised with modified YIG polycrystalline spheres, (to overcome limiting), semi-loop coupled in shunt with an Evans type, TDT, TRAPATT circuit via an open circuited quarter wave transmission line at the harmonic frequency. Pulsed output powers of 40 W with harmonic tuning of the fundamental frequency in excess of 125 MHz (5%) with a power variation of ±0.2 dB have been measured.
{"title":"Frequency Tuning of TRAPATT Oscillators Using Ferrimagnetic Resonators","authors":"S. Longley, P. L. Booth","doi":"10.1109/EUMA.1978.332637","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332637","url":null,"abstract":"The fundamental frequency of a pulsed TRAPATT S-band oscillator on an alumina MIC has been tuned electronically by changing individually the loading of the second and third harmonic terminations. This was realised with modified YIG polycrystalline spheres, (to overcome limiting), semi-loop coupled in shunt with an Evans type, TDT, TRAPATT circuit via an open circuited quarter wave transmission line at the harmonic frequency. Pulsed output powers of 40 W with harmonic tuning of the fundamental frequency in excess of 125 MHz (5%) with a power variation of ±0.2 dB have been measured.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133028216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332553
T. Morawski, J. Modelski
This paper describes the methods of analysis and measurements of microwave networks employing variable elements without the knowledge of the equivalent circuits or elements of the network matrix. Described methods are the consequence of the general theorem about the impedance change factor properties. Applications of this factor for measuring: the cutoff frequency of varactor and PIN diodes, the efficiency of the two port loaded with known variable impedance, and losses of the phase modulators are presented. Measurement results of the varactor linear phase modulator losses are given
{"title":"Applications of Impedance Transformation Property for Analysis and Measurements of Microwave Networks with Variable Elements","authors":"T. Morawski, J. Modelski","doi":"10.1109/EUMA.1978.332553","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332553","url":null,"abstract":"This paper describes the methods of analysis and measurements of microwave networks employing variable elements without the knowledge of the equivalent circuits or elements of the network matrix. Described methods are the consequence of the general theorem about the impedance change factor properties. Applications of this factor for measuring: the cutoff frequency of varactor and PIN diodes, the efficiency of the two port loaded with known variable impedance, and losses of the phase modulators are presented. Measurement results of the varactor linear phase modulator losses are given","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127696392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332523
A. Ros, T. Jarkas, D. Pompei
In the earty seventies, JOHNS introduced the Transmission Line Matrix (T.L.M.) Method. More recently AKHTARZAD applied this technics to some resonant cavities problems. Using this method, we have studied microstrip discontinuities such as the transition between two microstrip lines of different widths. This discontinuity can be caracterized by an equivalent circuit using lumped parameters. The values of these parameters, in the case of a loss less line have been computed in terms of frequency. The effect of the discontinuity with regard to its position from the ends of the line is observed. The limit case when one of the line width tends to zero shall be presented at the conference. The theorical results can be compared with some experimental ones and with other datas yet published in the litterature.
{"title":"Analysis of Some Three-Dimensional Microstrip Discontinuities in Terms of Frequency","authors":"A. Ros, T. Jarkas, D. Pompei","doi":"10.1109/EUMA.1978.332523","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332523","url":null,"abstract":"In the earty seventies, JOHNS introduced the Transmission Line Matrix (T.L.M.) Method. More recently AKHTARZAD applied this technics to some resonant cavities problems. Using this method, we have studied microstrip discontinuities such as the transition between two microstrip lines of different widths. This discontinuity can be caracterized by an equivalent circuit using lumped parameters. The values of these parameters, in the case of a loss less line have been computed in terms of frequency. The effect of the discontinuity with regard to its position from the ends of the line is observed. The limit case when one of the line width tends to zero shall be presented at the conference. The theorical results can be compared with some experimental ones and with other datas yet published in the litterature.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121234185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332611
D. Boccon-Gibod, P. Harrop
A planar Schottky diode of original structure has been developed using a suspended contact between the active diode area and the ohmic contact to increase the device cut-off frequency and make a low cost reliable device. Self-alignment techniques were used to define the active diode area. Cut-off frequencies in excess of 2 000 GHz have been measured and series resistances around 1.3 ohms. The diodes have been used in waveguide and microstrip mixer structures and conversion loss measurements will be presented.
{"title":"High Performance GaAs Schottky Barrier Diodes using a Cantilevered Metal Contact","authors":"D. Boccon-Gibod, P. Harrop","doi":"10.1109/EUMA.1978.332611","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332611","url":null,"abstract":"A planar Schottky diode of original structure has been developed using a suspended contact between the active diode area and the ohmic contact to increase the device cut-off frequency and make a low cost reliable device. Self-alignment techniques were used to define the active diode area. Cut-off frequencies in excess of 2 000 GHz have been measured and series resistances around 1.3 ohms. The diodes have been used in waveguide and microstrip mixer structures and conversion loss measurements will be presented.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121288918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332521
A. Saad, K. Schunemann
A generalized fin-line structure is analyzed, which shows several slots in the metal coating of the substrate. Possible applications of such a structure are e.g. directional couplers and 3 dB hybrids. Out-off frequencies, phase constants, and electric and magnetic field patterns are calculated by a numerical approximation method. Results are presented for the specialized cases of isolated and earthed finlines both with one and two slots of varying width. As an application, the calculated and measured performance of a bandstop filter is given.
{"title":"Field Desoription for Multi-Slot Fin-Line Struotures","authors":"A. Saad, K. Schunemann","doi":"10.1109/EUMA.1978.332521","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332521","url":null,"abstract":"A generalized fin-line structure is analyzed, which shows several slots in the metal coating of the substrate. Possible applications of such a structure are e.g. directional couplers and 3 dB hybrids. Out-off frequencies, phase constants, and electric and magnetic field patterns are calculated by a numerical approximation method. Results are presented for the specialized cases of isolated and earthed finlines both with one and two slots of varying width. As an application, the calculated and measured performance of a bandstop filter is given.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129361312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332585
M. Sarhadi, C. Aitchison, M. Underhill
A three-sampler frequency conversion technique is proposed for use in frequency counters. Its measurement range extends into the microwave frequency region without the long acquisition times associated with the conventional microwave translation techniques. An algorithm has been developed which can be executed at very low speed using a microprocessor or low speed digital circuitry.
{"title":"A Fast Sampling Microwave Frequency Counter","authors":"M. Sarhadi, C. Aitchison, M. Underhill","doi":"10.1109/EUMA.1978.332585","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332585","url":null,"abstract":"A three-sampler frequency conversion technique is proposed for use in frequency counters. Its measurement range extends into the microwave frequency region without the long acquisition times associated with the conventional microwave translation techniques. An algorithm has been developed which can be executed at very low speed using a microprocessor or low speed digital circuitry.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116974486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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