Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332518
Martin V. Schneider
Recent developments in the fields of semiconductor crystal growth and thin film lithography have proven to be useful in constructing millimeter-wave Schottky mixers with very low noise temperatures. These mixers look attractive for use in short-haul communication receivers, imaging radiometers, for detection of trace molecules in the atmosphere and for radio astronomical observations. The device physics of the metal-semiconductor contact (Schottky diode) which is needed for the mixing process is discussed and novel techniques to fabricate the required junction and circuit geometries are described. Conventional and subharmonically pumped mixers built with waveguide components and stripline circuits are treated. Results of tests performed on cryogenically cooled and room temperature mixers built in the 30-300 GHz frequency range using molecular beam epitaxy diodes and conventional vapor phase epitaxy diodes are reported.
{"title":"Low-Noise Millimeter-Wave Schottky Mixers","authors":"Martin V. Schneider","doi":"10.1109/EUMA.1978.332518","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332518","url":null,"abstract":"Recent developments in the fields of semiconductor crystal growth and thin film lithography have proven to be useful in constructing millimeter-wave Schottky mixers with very low noise temperatures. These mixers look attractive for use in short-haul communication receivers, imaging radiometers, for detection of trace molecules in the atmosphere and for radio astronomical observations. The device physics of the metal-semiconductor contact (Schottky diode) which is needed for the mixing process is discussed and novel techniques to fabricate the required junction and circuit geometries are described. Conventional and subharmonically pumped mixers built with waveguide components and stripline circuits are treated. Results of tests performed on cryogenically cooled and room temperature mixers built in the 30-300 GHz frequency range using molecular beam epitaxy diodes and conventional vapor phase epitaxy diodes are reported.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125505282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332604
T. Furuya, K. Kinoshita, Y. Kitahara, H. Taguchi, Y. Ito
A new generation of the all solid-state heterodyne transmitter receiver fitted with a high power GaAs FET (Field Effect Transistor) amplifier with the output power of maximum 5-W and low noise GaAs FET with the receiver noise figure of 3-dB for operation in the 6-GHz band has been developed. And especially adopted for space diversity reception is an IF phase combiner for hitless combining two IF signals by high speed endless electronic phase shifter in the tranmission of up to 1800 channel FDM signals or 78 Mbits/s 8-phase PSK digital signals in a fading area.
{"title":"New Generation 6-GHz l800 Channel/78 Mbits Radio System","authors":"T. Furuya, K. Kinoshita, Y. Kitahara, H. Taguchi, Y. Ito","doi":"10.1109/EUMA.1978.332604","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332604","url":null,"abstract":"A new generation of the all solid-state heterodyne transmitter receiver fitted with a high power GaAs FET (Field Effect Transistor) amplifier with the output power of maximum 5-W and low noise GaAs FET with the receiver noise figure of 3-dB for operation in the 6-GHz band has been developed. And especially adopted for space diversity reception is an IF phase combiner for hitless combining two IF signals by high speed endless electronic phase shifter in the tranmission of up to 1800 channel FDM signals or 78 Mbits/s 8-phase PSK digital signals in a fading area.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"228 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121038400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332556
B. Boittiaux, J. M. Jendrzejczak, G. Forterre, J. Marcoux
A new type of microwave power limiter without spike leakage is studied based on a very fast bulk effect in semiconductors. A numerical study of the structure is presented and expected performances of two common semiconductors are shown. Theoretical results and experimental verifications point out the very fast response of this new device, and consequently the "spikeless" response curve to any power impulse shape.
{"title":"A new type of microwave power limiter without spike leakage","authors":"B. Boittiaux, J. M. Jendrzejczak, G. Forterre, J. Marcoux","doi":"10.1109/EUMA.1978.332556","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332556","url":null,"abstract":"A new type of microwave power limiter without spike leakage is studied based on a very fast bulk effect in semiconductors. A numerical study of the structure is presented and expected performances of two common semiconductors are shown. Theoretical results and experimental verifications point out the very fast response of this new device, and consequently the \"spikeless\" response curve to any power impulse shape.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116121821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332632
H. Bohlen, E. Demmel
Development work aimed at klystron design concepts for various satellite and ground station applications in the frequency range 10-15 GHz and output power levels between 500 and 2500 W is described by this paper. Low weight and high efficiency are attractive features for space borne application using periodic focussing and a multistage collector. Test results including FM-transmission data for a single 30 MHz wide TV-channel are given. For application requiring a larger instantaneous bandwidth up to 100 MHz further design concepts have been studied. They include both PPM- and PM-focusing. A large mechanical tuning range of temperature compensated cavities is accomplished using contacting sliding plungers. The paper gives detailed performance data for ground station application.
{"title":"SHF-Klystron Development for Satellite and Ground Station Applications","authors":"H. Bohlen, E. Demmel","doi":"10.1109/EUMA.1978.332632","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332632","url":null,"abstract":"Development work aimed at klystron design concepts for various satellite and ground station applications in the frequency range 10-15 GHz and output power levels between 500 and 2500 W is described by this paper. Low weight and high efficiency are attractive features for space borne application using periodic focussing and a multistage collector. Test results including FM-transmission data for a single 30 MHz wide TV-channel are given. For application requiring a larger instantaneous bandwidth up to 100 MHz further design concepts have been studied. They include both PPM- and PM-focusing. A large mechanical tuning range of temperature compensated cavities is accomplished using contacting sliding plungers. The paper gives detailed performance data for ground station application.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131344477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332516
D. Morgan
Acoustic waves have several attractive features for device applications. Low velocities lead to compact devices. Use of crystalline materials gives low propagation losses and good reproducibility and stability. Surface acoustic waves offer in addition exceptional versatility, owing to accessibility of the propagation path. The wide variety of devices includes delay lines, pulse compressors, bandpass filters and oscillators, with applications mainly in radar, communications and ESM. This paper reviews these devices and their applications.
{"title":"Microwave Acoustic Devices","authors":"D. Morgan","doi":"10.1109/EUMA.1978.332516","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332516","url":null,"abstract":"Acoustic waves have several attractive features for device applications. Low velocities lead to compact devices. Use of crystalline materials gives low propagation losses and good reproducibility and stability. Surface acoustic waves offer in addition exceptional versatility, owing to accessibility of the propagation path. The wide variety of devices includes delay lines, pulse compressors, bandpass filters and oscillators, with applications mainly in radar, communications and ESM. This paper reviews these devices and their applications.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131757473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332618
P. Gibeau, J. Duchemin, J. Lacombe, J. Noger
We describe here the manufacturing process and the reliability tests adopted for gallium arsenide Schottky diodes designed for a space programm (TDRSS programm). Due to a new epitaxial process and a multilayer type contact, it has been possible to minimize the parasitic resistance and to obtain noise figures of 6.6 dB max. for wide band mixers operating in the range 14. 14.5 GHz, together with a high reliability level which has been demonstrated by the qualification tests.
{"title":"High Reliability Gallium Arsenide Schottky Diodes for Space Application","authors":"P. Gibeau, J. Duchemin, J. Lacombe, J. Noger","doi":"10.1109/EUMA.1978.332618","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332618","url":null,"abstract":"We describe here the manufacturing process and the reliability tests adopted for gallium arsenide Schottky diodes designed for a space programm (TDRSS programm). Due to a new epitaxial process and a multilayer type contact, it has been possible to minimize the parasitic resistance and to obtain noise figures of 6.6 dB max. for wide band mixers operating in the range 14. 14.5 GHz, together with a high reliability level which has been demonstrated by the qualification tests.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133482262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332628
T. Rozzi
Planar dielectric waveguides are important in electro-optics and at millimeter frequencies. In many integrated optical components grooves are etched and overlays are deposited on the planar surface. Corrugations are used in antenna feeds and in various dielectric slow wave structures in millimeter wave devices. Cascades of step discontinuities are idealizations of such structures. In this contribution a novel and fundamental approach to their analysis is presented. This is electromagnetically rigorous and, as such, capable of accounting for the interaction between adjacent and not adjacent discontinuities. Moreover, for the first time, the resonant behaviour and hence the frequency dependence, of such structures is explicitly described.
{"title":"A New Approach to Interacting Discontinuities in Planar Dielectric Waveguides","authors":"T. Rozzi","doi":"10.1109/EUMA.1978.332628","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332628","url":null,"abstract":"Planar dielectric waveguides are important in electro-optics and at millimeter frequencies. In many integrated optical components grooves are etched and overlays are deposited on the planar surface. Corrugations are used in antenna feeds and in various dielectric slow wave structures in millimeter wave devices. Cascades of step discontinuities are idealizations of such structures. In this contribution a novel and fundamental approach to their analysis is presented. This is electromagnetically rigorous and, as such, capable of accounting for the interaction between adjacent and not adjacent discontinuities. Moreover, for the first time, the resonant behaviour and hence the frequency dependence, of such structures is explicitly described.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"768 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116139245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332499
Y. Le Tron, S. Barvet, J. Obregon
The association of a Ga As Field Effect Transistors (FET) and a Single Crystal Ferrimagnetic Garnets (YIG) has brought about the realization of oscillators electronically tunable in very broad bands. This paper presents the theoretical conception and the first experimental results of two types of FET-YIG oscillators. The first device is made up of a FET with a simple reactive inductance in the gate and tuned by a YIG sphere in the source. Its output power is 5 mW in the 7 - 11 GHz band. In the second device, the reactive inductance in the gate is replaced by a second YIG sphere. Tuned by the same magnetic circuit, these two YIGs have a theoretical widening of the oscillation zone towards a band of several octaves. Practical results illustrate this possibility in the 4 - 15 GHz range. The many applications of the Solid state tuned oscillators (sweepers, super heterodyne microwave receivers, spectrum analysers, etc...) give a clear indication of the interest of these first results.
{"title":"Broadband YIG Tuned FET Oscillators","authors":"Y. Le Tron, S. Barvet, J. Obregon","doi":"10.1109/EUMA.1978.332499","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332499","url":null,"abstract":"The association of a Ga As Field Effect Transistors (FET) and a Single Crystal Ferrimagnetic Garnets (YIG) has brought about the realization of oscillators electronically tunable in very broad bands. This paper presents the theoretical conception and the first experimental results of two types of FET-YIG oscillators. The first device is made up of a FET with a simple reactive inductance in the gate and tuned by a YIG sphere in the source. Its output power is 5 mW in the 7 - 11 GHz band. In the second device, the reactive inductance in the gate is replaced by a second YIG sphere. Tuned by the same magnetic circuit, these two YIGs have a theoretical widening of the oscillation zone towards a band of several octaves. Practical results illustrate this possibility in the 4 - 15 GHz range. The many applications of the Solid state tuned oscillators (sweepers, super heterodyne microwave receivers, spectrum analysers, etc...) give a clear indication of the interest of these first results.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"68 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129541633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332584
V. Vuntesmery
It has been shown theoretical and experimental, that unlike microwave power flow semiconductor transformers, the ferromagnetic film transformers operating in ferromagnetic resonance regime have to perform reactive discontinuity themselves. The interaction of the ferromagnetic film galvanomagnetic detector placed parallel to the rectangular waveguide wide wall, with a dominant mode was examined. It has been shown, that direct voltage taking off the ferromagnetic film is proportional to active microwave power passing through the waveguide if the value of the external magnetic field is equal to its resonance value. The results of the experimental research at S band for 80Ni - 20Fe magnetic films are given. The independence of the direct voltage on the unmatched load shifted along the waveguide is confirmed.
{"title":"Application of Galvanomagnetic Detectors Based on Ferro-Magnetic Films to the Measurement of Microwave Power Flow in Unmatched Waveguide","authors":"V. Vuntesmery","doi":"10.1109/EUMA.1978.332584","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332584","url":null,"abstract":"It has been shown theoretical and experimental, that unlike microwave power flow semiconductor transformers, the ferromagnetic film transformers operating in ferromagnetic resonance regime have to perform reactive discontinuity themselves. The interaction of the ferromagnetic film galvanomagnetic detector placed parallel to the rectangular waveguide wide wall, with a dominant mode was examined. It has been shown, that direct voltage taking off the ferromagnetic film is proportional to active microwave power passing through the waveguide if the value of the external magnetic field is equal to its resonance value. The results of the experimental research at S band for 80Ni - 20Fe magnetic films are given. The independence of the direct voltage on the unmatched load shifted along the waveguide is confirmed.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127702802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332504
R. Hill
Omni-directional aerials are required extensively for a variety of microwave systems such as in aircraft distance measuring equipment, side-lobe suppression of aerials for radar and radar transponders. The omni-directional aerial described in this paper provides extremely constant azimuth coverage with E vertical polarisation and can be manufactured cheaply from a single printed circuit panel. It can be designed to meet a wide range of elevation beamwidth and pointing angle requirements with high efficiency.
{"title":"A Twin Line Omni-Directional Aerial Configuration","authors":"R. Hill","doi":"10.1109/EUMA.1978.332504","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332504","url":null,"abstract":"Omni-directional aerials are required extensively for a variety of microwave systems such as in aircraft distance measuring equipment, side-lobe suppression of aerials for radar and radar transponders. The omni-directional aerial described in this paper provides extremely constant azimuth coverage with E vertical polarisation and can be manufactured cheaply from a single printed circuit panel. It can be designed to meet a wide range of elevation beamwidth and pointing angle requirements with high efficiency.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127359004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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