Solid State Communications最新文献_第9页

Role of optimized Co/Ni doping in tailoring the magnetic and electrochemical properties of BiFe2O3-NiFe2O4 nanocomposites 优化Co/Ni掺杂对BiFe2O3-NiFe2O4纳米复合材料磁性和电化学性能的影响

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-11-07 DOI: 10.1016/j.ssc.2025.116223

A. Joana Preethi , T. Sharmili , Kalaiselvan Ganesan , M. Ragam

In this work, a dual approach of dopant incorporation with simultaneous composite formation was used to explore and enhance the multifunctional behaviour the BFO based nanostructures. A series of nanostructures were synthesized including, BFO, BFCNO nanostructures (BiFe_0.9Co_0.1-xNi_xO₃, where x = 0, 0.03, 0.05, 0.07, 0.1), pure NFO and BFCNO-NFO nanocomposites with optimal Co/Ni dopant concentration and their initial structural and morphological analysis confirmed the formation of densely agglomerated grainy nanostructures. Comprehensive studies exhibited the enhancement of dielectric and electrochemical properties for the BFCNO3 (BiF_e0.9Co_0.03Ni_0.07O₃) nanostructures with optimal dopant (Co, Ni) concentration for composite preparation. The BFCNO-NFO nanocomposites revealed a reduction in the dielectric loss of the BFO based system. The nanocomposites also exhibited a multifold enhancement in magnetic properties due to the incorporation of magnetic NFO and an 80 % increase in specific capacitance (63.3 F/g) compared to the BFCNO3 nanostructures (35.4 F/g) accompanied by and enhanced energy density of 0.9 Wh/kg and an unchanged power density of 1.35 kW/kg. This work underscores the synergistic benefit of composite formation and lattice site engineering concept in tailoring the multifunctional properties of BFO based system. The combined magnetic and electrochemical tunability with reduced leakage current and stable power density tilts the BFCNO-NFO nanostructures as a potential material for energy storage devices like supercapacitors and magnetoelectric energy storage systems.

在这项工作中，采用掺杂和同时形成复合材料的双重方法来探索和增强BFO基纳米结构的多功能行为。合成了BFO、BFCNO纳米结构（BiFe0.9Co0.1-xNixO3，其中x = 0、0.03、0.05、0.07、0.1）、纯NFO和最佳Co/Ni掺杂浓度的BFCNO-NFO纳米复合材料等一系列纳米结构，其初始结构和形态分析证实形成了致密团聚的颗粒状纳米结构。综合研究表明，最佳掺杂浓度（Co, Ni）可增强BFCNO3 （bife0.9 co0.03 ni0.070 o3）纳米结构的介电性能和电化学性能。BFO - nfo纳米复合材料可以降低BFO基体系的介电损耗。与BFCNO3纳米结构（35.4 F/g）相比，该纳米复合材料的磁性能得到了成倍的增强，比电容（63.3 F/g）提高了80%，能量密度提高了0.9 Wh/kg，功率密度保持不变，为1.35 kW/kg。这项工作强调了复合材料形成和点阵工程概念在定制基于BFO的系统的多功能特性方面的协同效益。磁性和电化学的结合可调性，减少了泄漏电流和稳定的功率密度，使BFCNO-NFO纳米结构成为超级电容器和磁电储能系统等储能器件的潜在材料。

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引用次数: 0

Tunable plasmonic and structural properties of SnO2: Au thin films deposited via GLAD-enhanced DC Sputtering glad增强直流溅射法制备SnO2: Au薄膜的可调谐等离子体和结构特性

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-11-07 DOI: 10.1016/j.ssc.2025.116228

Rofaida Nezzar , Nicolas Martin , Faycal Djeffal

This study investigates the impact of deposition angle on the structural and optical properties of Au-doped SnO₂ thin films synthesized via DC sputtering combined with GLancing Angle Deposition (GLAD). Thin films were deposited at particle flux angles of 0° (planar), 40°, 60°, and 80° (oblique). X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of SnO₂ and the successful incorporation of gold as a metallic nanocrystalline phase. The results revealed that GLAD significantly influences the film microstructure, altering crystallite size and preferred orientation. Optical measurements showed a progressive decrease in transparency with increasing deposition angle, with transmittance at 550 nm decreasing from 48 % (planar) to 30 % (80°), primarily due to enhanced light scattering from the nanostructured, porous morphology induced by GLAD. Interestingly, a slight reduction in absorbance at 550 nm was also observed in obliquely deposited films. The incorporation of gold as a dopant introduced localized surface plasmon resonance (LSPR) effects, significantly enhancing light absorption and scattering near the plasmonic peak. Notably, the LSPR peak position was tunable from approximately 550 nm–680 nm, depending on the GLancing angle during deposition. Despite notable structural and optical changes, the optical band gap remained relatively stable, ranging from 3.88 to 3.95 eV across all samples. Overall, this work highlights the synergistic effect of GLAD and gold doping in accurately tuning the plasmonic and microstructural characteristics of SnO₂ thin films, making them promising candidates for a broad range of optoelectronic applications, including photodetectors, solar cells, and chemical or biological sensors.

本文研究了沉积角度对直流溅射结合掠射角沉积法（GLAD）制备的au掺杂SnO2薄膜结构和光学性能的影响。在颗粒通量角为0°（平面）、40°、60°和80°（斜向）的情况下沉积薄膜。x射线衍射（XRD）分析证实了SnO2的多晶性质以及金作为金属纳米晶相的成功掺入。结果表明，GLAD显著影响了薄膜的微观结构，改变了晶粒尺寸和择优取向。光学测量显示，随着沉积角度的增加，透明度逐渐降低，550 nm处的透光率从48%（平面）下降到30%（80°），这主要是由于GLAD诱导的纳米结构多孔形貌增强了光散射。有趣的是，在倾斜沉积的薄膜中也观察到550 nm处吸光度的轻微降低。金作为掺杂剂的掺入引入了局部表面等离子体共振（LSPR）效应，显著增强了等离子体峰附近的光吸收和散射。值得注意的是，LSPR峰的位置在大约550 nm - 680 nm之间可调，这取决于沉积过程中的掠射角。尽管有明显的结构和光学变化，但所有样品的光学带隙保持相对稳定，范围在3.88至3.95 eV之间。总的来说，这项工作强调了GLAD和金掺杂在精确调节SnO2薄膜的等离子体和微观结构特征方面的协同作用，使它们成为广泛光电应用的有希望的候选者，包括光电探测器，太阳能电池和化学或生物传感器。

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引用次数: 0

Ab-initio calculations of the structural, electronic, magnetic, and optical properties of silicene substitutionally and interstitially doped with Zr, Nb, and Mo 以Zr， Nb和Mo取代和间隙掺杂的硅烯的结构，电子，磁性和光学性质的从头计算

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-11-07 DOI: 10.1016/j.ssc.2025.116226

Ali Alouache , Chaouki Siouani , Sofiane Mahtout , Abdellatif Abdesselem

This study uses density functional theory (DFT) within a 4 × 4 × 1 silicene supercell to examine the effects of transition metals (Zr, Nb, and Mo) doping. The results showed that adding these atoms to silicene causes noticeable changes in its structure, including increased bending and varying bond lengths. Depending on the dopant and type of doping, the system can transform into a semiconductor, a half-metal, or a metal. Except for interstitial Mo doping and substitutional Zr doping, magnetic properties were seen in every instance. In the case of interstitial Zr doping, the strongest magnetic behavior was observed. According to optical studies, the type of dopant and the method of its introduction are crucial factors in determining how silicene responds to electromagnetic signals. These modifications subsequently impact the material's optical, magnetic, and electrical properties, opening avenues for its use in optoelectronics, spintronics, and sensing devices.

本研究使用密度泛函理论（DFT）在一个4 × 4 × 1硅烯超级单体中检验过渡金属（Zr， Nb和Mo）掺杂的影响。结果表明，将这些原子添加到硅烯中会引起其结构的明显变化，包括增加弯曲和改变键长。根据掺杂剂和掺杂类型的不同，该系统可以转变为半导体、半金属或金属。除间隙Mo掺杂和取代Zr掺杂外，其余均有磁性。在间隙掺杂Zr的情况下，观察到最强的磁性行为。根据光学研究，掺杂剂的类型及其引入方法是决定硅烯对电磁信号响应的关键因素。这些修饰随后影响了材料的光学、磁性和电性能，为其在光电子学、自旋电子学和传感设备中的应用开辟了道路。

引用次数: 0

Effects of alloying elements on cohesion and fracture toughness of Zr grain boundary 合金元素对Zr晶界内聚和断裂韧性的影响

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-11-06 DOI: 10.1016/j.ssc.2025.116224

L.C. Liu , J.B. Jin , J.T. Zheng , Z.Y. Xu , S.F. Zhou

Density functional theory is performed to comparatively examine how alloying elements (Sn, Fe, Cr, Cu, and Nb) modulate the grain boundary stability, cohesive strength, Young's modulus, and fracture toughness for HCP Zr

{10 \overline{1} 1}

grain boundary. Thermodynamic analysis reveals that Cr, Fe, and Nb exhibit spontaneous GB segregation with negative segregation energies while simultaneously enhancing the stability and fracture toughness of the

{10 \overline{1} 1}

grain boundary. Notably, Cu and Sn additions substantially diminish cohesion strength, Young's modulus, and fracture toughness. Co-alloying strategies with Cr/Nb effectively mitigate Sn-induced embrittlement, restoring the fracture resistance of pristine ZrSn alloy. The derived results are discussed in terms of electronic structure and are in good agreement with experimental and theoretical results in the literature, which could provide a deep understanding of the intrinsic mechanism of the effects of alloying element on the fracture toughness of HCP Zr.

采用密度函数理论比较研究了合金元素（Sn、Fe、Cr、Cu、Nb）对HCP Zr{101 1}晶界稳定性、内聚强度、杨氏模量和断裂韧性的调节作用。热力学分析表明，Cr、Fe和Nb表现出负偏析能的自发GB偏析，同时增强了{101 1}晶界的稳定性和断裂韧性。值得注意的是，Cu和Sn的添加大大降低了内聚强度、杨氏模量和断裂韧性。Cr/Nb共合金化策略可有效减轻sn引起的脆性，恢复原始ZrSn合金的抗断裂能力。推导结果从电子结构角度进行了讨论，与文献中的实验和理论结果吻合较好，有助于深入了解合金元素对HCP Zr断裂韧性影响的内在机理。

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引用次数: 0

A model for calculating the uniaxial pressure derivatives of the critical temperature in Hg-12(n−1)n superconductors: A Casimir energy scenario 计算Hg-12(n−1)n超导体临界温度的单轴压力导数的模型：卡西米尔能量情景

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-11-06 DOI: 10.1016/j.ssc.2025.116221

Abdullo Ahadov , Davron Dzhuraev

In recent years, applying external hydrostatic pressure has become a standard method to enhance the superconducting critical temperature

(T_{c})

. In addition to uniform pressure, uniaxial pressure can be applied along specific crystallographic axes. The effect of uniaxial pressure on

T_{c}

depends on the axis: it can either enhance or suppress, depending on the axis along which pressure is applied. However, theoretical and experimental studies on this effect remain limited. In this article, we propose a model to calculate the uniaxial pressure derivatives of

T_{c}

in tetragonal high-temperature superconductors, based on the idea that superconductivity is driven by the Casimir energy between

{CuO}_{2}

planes. We test the model on optimally doped Hg-12(n-1)n cuprates, which have the highest

T_{c}

among cuprates. Our theoretical results agree well with experimental data, demonstrating a practical method for evaluating uniaxial pressure effects and emphasizing the crucial role of Casimir energy in high-

T_{c}

cuprates.

近年来，施加外部静水压力已成为提高超导临界温度（Tc）的标准方法。除了均匀压力外，单轴压力还可以沿着特定的结晶轴施加。单轴压力对Tc的影响取决于轴：它可以增强或抑制，这取决于施加压力的轴。然而，关于这一效应的理论和实验研究仍然有限。本文基于CuO2平面间卡西米尔能量驱动超导的思想，提出了一个计算四边形高温超导体中Tc单轴压力导数的模型。我们在最佳掺杂的Hg-12(n-1)n铜酸盐上测试了模型，这些铜酸盐具有最高的Tc。我们的理论结果与实验数据吻合良好，证明了一种评估单轴压力效应的实用方法，并强调了卡西米尔能量在高tc铜酸盐中的关键作用。

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引用次数: 0

Manipulation of magnetic properties by electric field in epitaxial Fe/BTO/Nb:STO film 电场对Fe/BTO/Nb:STO外延薄膜磁性能的影响

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-11-05 DOI: 10.1016/j.ssc.2025.116225

Minh-Anh Tran Nguyen , Hyun Il Seo , Woo Seok Choi , Anh Tuan Duong , Sunglae Cho , Chanyong Hwang

We demonstrate reversible electric-field control of the coercive field of a 10 nm epitaxial Fe film by switching the polarization of an underlying 41 nm BaTiO₃ (BTO) layer grown on Nb:SrTiO₃ (Nb:STO) substrates. High-quality epitaxy of the Fe(10 nm)/BTO(41 nm)/Nb:STO stack was achieved with Fe[100]‖BTO[110] and Fe[110]‖BTO[100] orientation relationships. As-grown, the Fe film exhibits uniaxial magnetic anisotropy with its easy axis along the Fe[100] direction. Under out-of-plane electric fields up to ±6 V, the Fe coercive field is modulated by ≈ 5–10 Oe. The voltage dependence of the coercive field is consistent with ferroelectric polarization switching in the BTO layer. This observation provides clear evidence of robust interfacial magnetoelectric coupling in Fe/BTO heterostructures. We propose that polarization-induced atomic displacements or distinct strain induced from out-of-plane and in-plane domains in BTO transmit anisotropic strain across the interface to the Fe film, thereby tuning its coercivity. We note that this strain-mediated mechanism remains a hypothesis: our PFM and MOKE data establish a clear correlation between ferroelectric switching and H_C shifts but do not directly probe the interfacial atomic structure. Direct confirmation will require future atomic-scale studies. These results highlight epitaxial Fe/BTO/Nb:STO heterostructures as promising platforms for voltage-tunable spintronic devices.

我们通过开关生长在Nb:SrTiO3 （Nb:STO）衬底上的41 nm BTO层的极化，证明了可逆电场对10 nm外延Fe薄膜矫顽力场的控制。Fe[100]‖BTO[110]和Fe[110]‖BTO[100]取向关系实现了Fe(10 nm)/BTO(41 nm)/Nb:STO堆栈的高质量外延。长大后，Fe薄膜呈现单轴磁各向异性，其易轴沿Fe[100]方向。在±6 V的面外电场作用下，铁矫顽力场被≈5-10 Oe调制。在BTO层中，矫顽场的电压依赖性与铁电极化开关是一致的。这一观察结果为Fe/BTO异质结构中强大的界面磁电耦合提供了明确的证据。我们提出，在BTO中，由面外和面内畴引起的极化诱导的原子位移或不同的应变将各向异性应变通过界面传递到Fe膜上，从而调节其矫顽力。我们注意到这种应变介导的机制仍然是一个假设：我们的PFM和MOKE数据建立了铁电开关和HC位移之间的明确相关性，但没有直接探测界面原子结构。直接证实需要未来的原子尺度研究。这些结果突出了外延Fe/BTO/Nb:STO异质结构作为电压可调自旋电子器件的有前途的平台。

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引用次数: 0

Observation of the soft lattice mode in compressed semimetal zirconium diarsenide, ZrAs2 压缩半金属二砷化锆ZrAs2中软晶格模式的观察

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-11-03 DOI: 10.1016/j.ssc.2025.116222

T. Palasyuk , R. Bacewicz , A.S. Wadge , D. Jastrzebski , A. Wisniewski , S. Porowski , K. Zberecki , C. Jastrzebski

ZrAs₂ has been regaining research attention owing to nontrivial topological properties of electronic bands unveiled in this semimetallic material. Recently the phonon properties of ZrAs₂ at ambient pressure were successfully approached through Raman spectroscopy and density functional theory (DFT) revealing an important role of electron-phonon coupling in the mechanism of phonon decay.

Here we present results of the preliminary study on inelastic light (Raman) scattering in ZrAs₂ compressed up to 20 GPa (ca. 200 000 atm). It was found that the frequencies of all phonon modes increase linearly with pressure up to 11 GPa. Further compression led to the change in the slopes of pressure dependences retaining their linear character. At the same time the lowest positioned A_1g phonon mode (ca. 95 cm⁻¹ at ambient pressure) exhibited a pronounced change from the hardening to the weak softening regime of its energy (frequency) with pressure. Moreover, a spectacular resonance-like intensity change of the lowest B_1g phonon mode was detected in the pressure range ca. 5–17 GPa. While the origin of the varying intensity of the B_1g mode is yet to be understood, our complementary DFT calculations have qualitatively reproduced the observed soft behavior of the lowest A_1g phonon mode as well as the progressive splitting between the first A_1g and B_1g modes. In light of the recent experimental confirmation of superconductivity in other semimetal zirconium compounds, ZrTe₂ and isostructural ZrP₂, where soft lattice modes were observed preceding the superconductive state, the softening of the A_1g phonon in ZrAs₂ might foretell the zero-resistance state in this material at pressures above 10 GPa.

由于在这种半金属材料中发现的电子带具有非凡的拓扑特性，ZrAs2重新受到了研究的关注。最近，通过拉曼光谱和密度泛函理论（DFT）成功地研究了ZrAs2在环境压力下的声子性质，揭示了电子-声子耦合在声子衰变机制中的重要作用。本文介绍了压缩至20gpa（约200000 atm）的ZrAs2中非弹性光（拉曼）散射的初步研究结果。结果表明，当压力达到11 GPa时，所有声子模式的频率都呈线性增加。进一步压缩导致压力依赖性斜率的变化，保持其线性特征。同时，最低位置的A1g声子模式（环境压力下约为95 cm−1）表现出能量（频率）随压力从硬化到弱软化的明显变化。此外，在约5 ~ 17 GPa的压力范围内，检测到最低B1g声子模式的显著共振强度变化。虽然B1g模式强度变化的起源尚不清楚，但我们的互补DFT计算定性地再现了观察到的最低A1g声子模式的软行为，以及第一A1g和B1g模式之间的渐进分裂。鉴于最近在其他半金属锆化合物ZrTe2和等结构ZrP2中超导性的实验证实，其中在超导状态之前观察到软晶格模式，ZrAs2中A1g声子的软化可能预示着该材料在高于10 GPa的压力下的零电阻状态。

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引用次数: 0

Exploring the structural, electronic, magnetic and optical properties of Spin-Gapless Semiconducting CoFeTaZ(Z = Si, Ge and Sn) alloys for spin-optoelectronic applications 探索用于自旋光电应用的半导体CoFeTaZ（Z = Si， Ge和Sn）合金的结构，电子，磁性和光学性质

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-11-01 DOI: 10.1016/j.ssc.2025.116216

Oluwadamilare J. Dada , Bamidele I. Adetunji , Abidemi E. Adeniji , Kolapo A. Ademola

We have used first-principles approach to investigate the structural, electronic, magnetic and optical properties of the SGS CoFeTaZ(Z = Si, Ge and Sn) alloys. Our calculated spin-polarized band structures, density of states and projected density of states confirmed that, all the alloys are Type-I spin-gapless semiconductors and half-metallic materials. We reported indirect band gaps with an energy gap of 0.588 eV for CoFeTaSi, 0.434 eV for CoFeTaGe and 0.406 eV for CoFeTaSn in the spin-down channel which confirmed their semiconducting character. Also, we reported metallic character in the spin-up channel for all the compounds. We observed overlap interaction of d-d orbitals between Co-3d, Fe-3d and Ta-5d atoms which contributed to the exchange interaction. We reported magnetic moments of 2 μB and the Curie temperature (Tc); of 385 K for all the alloys. These values suggest that CoFeTaZ(Z = Si, and Sn) can be used; for spin information storage above room temperature. The optical properties such dielectric; functions (real and imaginary), refractive index, reflectivity and transmissivity were examined and reported within the photon energy range of 0–10.0 eV. The present results revealed that SGS CoFeTaZ(Z = Si, Ge and Sn) can be used for spin-optoelectronic applications due to their favorable light absorption, half-metallic feature, high polarization and high Curie temperature value.

我们采用第一性原理方法研究了SGS CoFeTaZ（Z = Si， Ge和Sn）合金的结构、电子、磁性和光学性质。我们计算的自旋极化能带结构、态密度和投射态密度证实，所有合金都是i型自旋无间隙半导体和半金属材料。我们报道了CoFeTaSi、CoFeTaGe和CoFeTaSn在自旋向下通道中存在0.588 eV、0.434 eV和0.406 eV的间接带隙，证实了它们的半导体特性。此外，我们还报道了所有化合物在自旋向上通道中的金属性质。我们观察到Co-3d， Fe-3d和Ta-5d原子之间的d-d轨道重叠相互作用，这促成了交换相互作用。磁矩为2 μB，居里温度为Tc；所有合金的温度为385 K。这些值表明可以使用CoFeTaZ(Z = Si和Sn)；用于室温以上的自旋信息存储。这种电介质的光学性质；在0-10.0 eV的光子能量范围内，测定了光子的实、虚函数、折射率、反射率和透射率。本研究结果表明，由于具有良好的光吸收特性、半金属特性、高极化和高居里温值，SGS CoFeTaZ（Z = Si， Ge和Sn）可用于自旋光电应用。

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引用次数: 0

Low temperature 2D quantum corrections to magnetoconductance in thin iridate films 铱酸盐薄膜中低温二维量子电导校正

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-11-01 DOI: 10.1016/j.ssc.2025.116220

A.L. Danilyuk , D.A. Podryabinkin , A.B. Filonov , G.A. Ovsyannikov , G.D. Ulev , K.Y. Constantinian , D.B. Migas

The sheet resistance of the thin epitaxial SrIrO₃ films shows the monotonic decrease with temperature raise in the low temperature range of 1.86–30.0 K and the negative magnetoresistance at 2 and 10 K in magnetic fields of up to 10 T. For a correct description of the observed behavior, the model of 2D quantum corrections to the conductivity due to the spin splitting, Coulomb interaction, and weak localization effects was applied. It was shown that the negative total magnetoresistance was originated from the corrections due to the Coulomb interaction and spin-orbital splitting to weaken the spin-orbital scattering contribution in addition to the weak localization suppression and to the presence of the electron attraction induced by phonons.

在1.86 ~ 30.0 K的低温范围内，SrIrO3外延薄膜的片电阻随温度升高呈单调下降趋势，在高达10 t的磁场中，在2和10 K处呈现负磁电阻，为了正确描述所观察到的行为，采用了自旋分裂、库仑相互作用和弱局域化效应对电导率的二维量子修正模型。结果表明，负的总磁电阻是由于库仑相互作用和自旋轨道分裂对自旋轨道散射贡献的修正，以及弱局域抑制和声子诱导的电子吸引的存在造成的。

引用次数: 0

Synthesis of magnetite nanoparticles (Fe3O4) through an ultra-sonically assisted coprecipitation method 超声辅助共沉淀法合成纳米Fe3O4磁铁矿

IF 2.4 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications

Pub Date : 2025-10-29 DOI: 10.1016/j.ssc.2025.116219

Jahaziel Amaya , I.M. Saavedra Gaona , C.A. Parra Vargas , R.J. Rincón , L. Martínez , Y. Huttel , D. Llamosa Pérez

Fe₃O₄ and Fe₃O₄@SiO₂ nanoparticles were synthesized and characterized using an ultrasonically assisted co-precipitation method. Two synthesis conditions were evaluated by varying the ammonia addition rate: dropwise (6.95 mL min⁻¹, Fe₃O₄-I) and instantaneous (429 mL min⁻¹, Fe₃O₄-II). The resulting Fe₃O₄ nanoparticles exhibited average crystallite sizes of 12.5 ± 1.2 nm (I) and 10.3 ± 1.7 nm (II). Subsequent SiO₂ coating via a TEOS sol-gel route produced core-shell Fe₃O₄@SiO₂ structures with shell thicknesses of 2.1–2.6 nm (I@SiO₂) and 2.4–2.9 nm (II@SiO₂). Magnetic measurements revealed saturation magnetization (M_s) values of 61.6 (I) and 66.5 emu·g⁻¹ (II) for the uncoated samples, and 11.7 (I@SiO₂) and 41.0 emu·g⁻¹ (II@SiO₂) after coating, with coercivity (H_c) ranging from 0.005 to 3.8 Oe. The blocking temperatures (T_B) were 176.4–192.8 K for Fe₃O₄ and 132.1–161.2 K for Fe₃O₄@SiO₂, confirming superparamagnetic behavior at room temperature. DLS analysis verified excellent colloidal stability and uniform dispersion, while FTIR spectra confirmed successful SiO₂ coating and the presence of hydroxyl and silanol surface groups. The SiO₂ shell improved nanoparticle stability and dispersion while slightly reducing magnetic response. These results demonstrate that controlled synthesis under ultrasonic assistance yields highly crystalline, stable Fe₃O₄ based nanostructures suitable for biomedical applications such as MRI contrast agents.

采用超声辅助共沉淀法合成了Fe3O4和Fe3O4@SiO2纳米颗粒，并对其进行了表征。通过改变氨的添加速率，考察了两种合成条件：滴加（6.95 mL min−1,Fe3O4-I）和瞬时加（429 mL min−1,Fe3O4-II）。所得Fe3O4纳米颗粒的平均晶粒尺寸分别为12.5±1.2 nm (I)和10.3±1.7 nm （II）。随后，通过TEOS溶胶-凝胶途径涂覆SiO2，得到了壳厚度分别为2.1-2.6 nm （I@SiO2）和2.4-2.9 nm （II@SiO2）的核壳结构Fe3O4@SiO2。磁性测量结果显示，未涂覆样品的饱和磁化强度（Ms）分别为61.6 (I)和66.5 emu·g−1 (II)，涂覆后的饱和磁化强度（Ms）分别为11.7 （I@SiO2）和41.0 emu·g−1 (II@SiO2)，矫顽力（Hc）范围为0.005 ~ 3.8 Oe。Fe3O4的阻断温度为176.4 ~ 192.8 K， Fe3O4@SiO2的阻断温度为132.1 ~ 161.2 K，证实了Fe3O4在室温下具有超顺磁性。DLS分析证实了优异的胶体稳定性和均匀的分散，而FTIR光谱证实了成功的SiO2涂层以及羟基和硅醇表面基团的存在。SiO2壳提高了纳米颗粒的稳定性和分散性，同时略微降低了磁响应。这些结果表明，超声辅助下的受控合成可以产生高结晶、稳定的Fe3O4基纳米结构，适用于MRI造影剂等生物医学应用。

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引用次数: 0