Pub Date : 2015-12-21DOI: 10.1109/COMCAS.2015.7360465
Daniel Koyama, A. Barsegyan, J. Walker
This paper examines the effect of using normal Class A/B bias for kW-level GaN and LDMOS transistors used in radar and avionic systems. It is shown that Class A/B bias results in an overall efficiency which is typically 5-10% less than the efficiency during the pulse as well as generating significant shot noise in the off period which can cause receiver de-sensitization. A novel automatic gate pulsing and sequencing circuit is described which overcomes both of the above problems. Rise/fall time and latency measurements are presented for this circuit. It is shown that the output noise in the off period is reduced by >30dB.
{"title":"Implications of using kW-level GaN transistors in radar and avionic systems","authors":"Daniel Koyama, A. Barsegyan, J. Walker","doi":"10.1109/COMCAS.2015.7360465","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360465","url":null,"abstract":"This paper examines the effect of using normal Class A/B bias for kW-level GaN and LDMOS transistors used in radar and avionic systems. It is shown that Class A/B bias results in an overall efficiency which is typically 5-10% less than the efficiency during the pulse as well as generating significant shot noise in the off period which can cause receiver de-sensitization. A novel automatic gate pulsing and sequencing circuit is described which overcomes both of the above problems. Rise/fall time and latency measurements are presented for this circuit. It is shown that the output noise in the off period is reduced by >30dB.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130909491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-21DOI: 10.1109/COMCAS.2015.7360496
B. Levush, A. Vlasov, I. Chernyavskiy, S. Cooke, J. Pasour, G. Stantchev, K. Nguyen, E. Wright, D. Chernin, J. Petillo, T. Antonsen
Recent advances in the development of millimeter wave vacuum electronic devices have been made possible by powerful, specialized design tools. We summarize them here and point out areas where improved models and codes will be needed.
{"title":"Modeling and simulation of millimeter wave vacuum electronic devices at the naval research laboratory","authors":"B. Levush, A. Vlasov, I. Chernyavskiy, S. Cooke, J. Pasour, G. Stantchev, K. Nguyen, E. Wright, D. Chernin, J. Petillo, T. Antonsen","doi":"10.1109/COMCAS.2015.7360496","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360496","url":null,"abstract":"Recent advances in the development of millimeter wave vacuum electronic devices have been made possible by powerful, specialized design tools. We summarize them here and point out areas where improved models and codes will be needed.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134579195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-21DOI: 10.1109/COMCAS.2015.7360432
Firass Mustafa, E. Halpern, E. Socher
This paper discusses an active on-chip multiplier for mm-wave generation, implemented in CMOS 65nm TSMC technology. The multiplying is done within single stage, which is connected via wire bonds to 4 stage PA, reducing the DC power consumption to 360 mW, 80 mW for the multiplying stage and 280 mW for the PA. Total core silicon area of 0.92 mm2, 0.31 mm2 the multiplier area and 0.61 mm2 the PA area. Achieving Psat of 6 dBm at 82 GHz.
{"title":"An on-chip active frequency multiplier-by-seven (X-band to W-band) for millimeter-wave signal generation","authors":"Firass Mustafa, E. Halpern, E. Socher","doi":"10.1109/COMCAS.2015.7360432","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360432","url":null,"abstract":"This paper discusses an active on-chip multiplier for mm-wave generation, implemented in CMOS 65nm TSMC technology. The multiplying is done within single stage, which is connected via wire bonds to 4 stage PA, reducing the DC power consumption to 360 mW, 80 mW for the multiplying stage and 280 mW for the PA. Total core silicon area of 0.92 mm2, 0.31 mm2 the multiplier area and 0.61 mm2 the PA area. Achieving Psat of 6 dBm at 82 GHz.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122424900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-21DOI: 10.1109/COMCAS.2015.7360448
G. Slepyan, A. Boag, V. Mordachev, E. Sinkevich, S. Maksimenko, P. Kuzhir, G. Miano, M. Portnoi, A. Maffucci
The concept of electromagnetic crosstalk in nano-circuits via quantum entanglement between the elements is considered. Manifestation of this effect in electromagnetic compatibility (EMC) and a solution for for its suppression are discussed.
考虑了纳米电路中元件间量子纠缠引起的电磁串扰的概念。讨论了该效应在电磁兼容中的表现和抑制方法。
{"title":"Electromagnetic compatibility in nano-electronics: Manifestation and suppression of quantum crosstalk","authors":"G. Slepyan, A. Boag, V. Mordachev, E. Sinkevich, S. Maksimenko, P. Kuzhir, G. Miano, M. Portnoi, A. Maffucci","doi":"10.1109/COMCAS.2015.7360448","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360448","url":null,"abstract":"The concept of electromagnetic crosstalk in nano-circuits via quantum entanglement between the elements is considered. Manifestation of this effect in electromagnetic compatibility (EMC) and a solution for for its suppression are discussed.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123033992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-21DOI: 10.1109/COMCAS.2015.7360374
J. Kantarovsky, S. Shapira
Using an intrinsic percolation model, this paper presents a statistical model which predicts the probability of Shallow Trench Isolation (STI) breakdown as a result of aging in N-type Laterally Diffused MOSFET (NLDMOS). During the STI's etch process particles might “shadow” the silicon etch resulting in protrusions of Si at different depths and locations. This effect which normally has a negligible effect on device long term failure may become pronounced for large NLDMOS switches. The model allows to define common stress tests needed to invoke failure, and hence the removal, of devices with critical defects. The failure probability with time for the remaining devices is calculated. A numerical example is presented in the last section.
{"title":"An oxide failure reliability model for shallow trench isolation based LDMOS devices","authors":"J. Kantarovsky, S. Shapira","doi":"10.1109/COMCAS.2015.7360374","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360374","url":null,"abstract":"Using an intrinsic percolation model, this paper presents a statistical model which predicts the probability of Shallow Trench Isolation (STI) breakdown as a result of aging in N-type Laterally Diffused MOSFET (NLDMOS). During the STI's etch process particles might “shadow” the silicon etch resulting in protrusions of Si at different depths and locations. This effect which normally has a negligible effect on device long term failure may become pronounced for large NLDMOS switches. The model allows to define common stress tests needed to invoke failure, and hence the removal, of devices with critical defects. The failure probability with time for the remaining devices is calculated. A numerical example is presented in the last section.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127771441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-21DOI: 10.1109/COMCAS.2015.7360372
S. Ivashov, V. Razevig, T. Bechtel, I. Vasiliev, L. Capineri, A. Zhuravlev
Methods of ultrasonic diagnostics, which are widely applied for non-destructive testing of different constructions, are ineffective for foam insulation, the silicate fiber tiles or honeycomb prepregs due to their high porosity, which leads to high levels of acoustic wave attenuation. Microwave diagnostics using holographic subsurface radars RASCAN-5, which operate in the gigahertz band, could be a good alternative to ultrasonic testing. Experimental results demonstrate the effectiveness of the technology on an example of honeycomb dielectric composite materials.
{"title":"Microwave holography for NDT of dielectric structures","authors":"S. Ivashov, V. Razevig, T. Bechtel, I. Vasiliev, L. Capineri, A. Zhuravlev","doi":"10.1109/COMCAS.2015.7360372","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360372","url":null,"abstract":"Methods of ultrasonic diagnostics, which are widely applied for non-destructive testing of different constructions, are ineffective for foam insulation, the silicate fiber tiles or honeycomb prepregs due to their high porosity, which leads to high levels of acoustic wave attenuation. Microwave diagnostics using holographic subsurface radars RASCAN-5, which operate in the gigahertz band, could be a good alternative to ultrasonic testing. Experimental results demonstrate the effectiveness of the technology on an example of honeycomb dielectric composite materials.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121349259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-21DOI: 10.1109/COMCAS.2015.7360481
Alexander Ebert, S. Kaleem, J. Muller, R. Stephan, D. Stopel, T. Kasser, W. Konrath, M. Hein
We have developed a electronically reconfigurable 4×4 switch matrix for satellite communications at Ka-band downlink frequencies (17 ... 22 GHz), utilizing low-temperature co-fired ceramic multilayer technology. During a successful one-year on-orbit verification aboard a German test satellite, the switch matrix showed continuous reliable operation and achieved the technology-readiness level (TRL = 9) for low-earth orbit missions. Based on these promising results und underlying qualification capabilities, we have designed an advanced version of the switch matrix as part of a flexible input multiplexer for operation during the entire operational lifetime of the German geo-stationary Heinrich-Hertz mission. The challenge of this approach lies in the combination of latest research concepts with an industry-level space-qualified microwave system-in-package approach including an automated hybrid assembly process, following the highest standards for satellite payload systems. Beside introducing and verifying new technologies in orbit, and thus reducing the design cycles for future satellite payloads in general, increased reproducibility and reliability of the module, and reduced manufacturing costs are further important consequences. The switch matrix incorporates double-sided hybrid integration, hermetic sealing of bare-die components, space-qualified PIN-diode switch-ICs, and wire-bonded coaxial connectors.
{"title":"An industry-level implementation of a compact microwave diode switch matrix for flexible input multiplexing if a geo-stationary satellite payload","authors":"Alexander Ebert, S. Kaleem, J. Muller, R. Stephan, D. Stopel, T. Kasser, W. Konrath, M. Hein","doi":"10.1109/COMCAS.2015.7360481","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360481","url":null,"abstract":"We have developed a electronically reconfigurable 4×4 switch matrix for satellite communications at Ka-band downlink frequencies (17 ... 22 GHz), utilizing low-temperature co-fired ceramic multilayer technology. During a successful one-year on-orbit verification aboard a German test satellite, the switch matrix showed continuous reliable operation and achieved the technology-readiness level (TRL = 9) for low-earth orbit missions. Based on these promising results und underlying qualification capabilities, we have designed an advanced version of the switch matrix as part of a flexible input multiplexer for operation during the entire operational lifetime of the German geo-stationary Heinrich-Hertz mission. The challenge of this approach lies in the combination of latest research concepts with an industry-level space-qualified microwave system-in-package approach including an automated hybrid assembly process, following the highest standards for satellite payload systems. Beside introducing and verifying new technologies in orbit, and thus reducing the design cycles for future satellite payloads in general, increased reproducibility and reliability of the module, and reduced manufacturing costs are further important consequences. The switch matrix incorporates double-sided hybrid integration, hermetic sealing of bare-die components, space-qualified PIN-diode switch-ICs, and wire-bonded coaxial connectors.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"16 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114057189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-02DOI: 10.1109/COMCAS.2015.7360363
Johan Venter, S. Sinha
The most commonly used pixel structure in integrated circuit technologies is the three-transistor pixel structure (3-T). This structure consists of a pixel, a reset transistor, a source follower and a pixel select transistor. An extension to this is the 4-T pixel structure where an extra transistor is included to enable current steering in the readout phase and reset phase. This greatly reduces current consumption compared to the conventional 3-T pixel structure. Simulation results depicting this optimization is provided to support the technical contribution of this paper.
{"title":"Noise reduction by pixel circuit optimization in 4-T pixel structure detectors using integrated circuit technologies","authors":"Johan Venter, S. Sinha","doi":"10.1109/COMCAS.2015.7360363","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360363","url":null,"abstract":"The most commonly used pixel structure in integrated circuit technologies is the three-transistor pixel structure (3-T). This structure consists of a pixel, a reset transistor, a source follower and a pixel select transistor. An extension to this is the 4-T pixel structure where an extra transistor is included to enable current steering in the readout phase and reset phase. This greatly reduces current consumption compared to the conventional 3-T pixel structure. Simulation results depicting this optimization is provided to support the technical contribution of this paper.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121947987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-02DOI: 10.1109/COMCAS.2015.7360411
A. Digulescu, Cindy Bernard, Elena Lungu, I. Candel, C. Ioana, Gabriel Vasile
Transient signals have proved to be difficult to characterize/classify because of their short duration and broad spectrum. Methods based on time-frequency analysis are used for transient detection, but their characterization is limited when it comes to similar signals that have close amplitudes and frequencies. This paper presents the multi-lag phase space analysis, an alternative to the classical approaches for the characterization of transient signals. New tools developed for this method are applied on multi-path acoustic signals which are acquired using an acoustic microphone placed in the center of a facility surrounded by walls. The results are compared with the ones obtained using time-frequency analysis.
{"title":"Transient signal characterization using multi-lag phase space analysis","authors":"A. Digulescu, Cindy Bernard, Elena Lungu, I. Candel, C. Ioana, Gabriel Vasile","doi":"10.1109/COMCAS.2015.7360411","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360411","url":null,"abstract":"Transient signals have proved to be difficult to characterize/classify because of their short duration and broad spectrum. Methods based on time-frequency analysis are used for transient detection, but their characterization is limited when it comes to similar signals that have close amplitudes and frequencies. This paper presents the multi-lag phase space analysis, an alternative to the classical approaches for the characterization of transient signals. New tools developed for this method are applied on multi-path acoustic signals which are acquired using an acoustic microphone placed in the center of a facility surrounded by walls. The results are compared with the ones obtained using time-frequency analysis.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122244722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/COMCAS.2015.7360478
C. Psomas, Christodoulos Skouroumounis, I. Krikidis, A. Kalis, Zenonas Theodosiou, A. Kounoudes
Full-duplex (FD) radio can potentially provide a higher spectral efficiency provided the self-interference (SI) at a terminal can be substantially mitigated and the multiuser interference, in the case of a large-scale scenario, is restricted. In this paper, we investigate the positive impact directional antennas can have on the reduction of these two types of interference. We study a two-dimensional geometric channel model in order to understand and acquire insight regarding the multipath effects on the SI caused by scatterers. Moreover, we provide a performance analysis for the uplink in large-scale FD cellular networks and model the impact of passive suppression on the network's performance. The derived results show the significant performance gains that can be achieved by the employment of directional antennas.
{"title":"Performance gains from directional antennas in full-duplex systems","authors":"C. Psomas, Christodoulos Skouroumounis, I. Krikidis, A. Kalis, Zenonas Theodosiou, A. Kounoudes","doi":"10.1109/COMCAS.2015.7360478","DOIUrl":"https://doi.org/10.1109/COMCAS.2015.7360478","url":null,"abstract":"Full-duplex (FD) radio can potentially provide a higher spectral efficiency provided the self-interference (SI) at a terminal can be substantially mitigated and the multiuser interference, in the case of a large-scale scenario, is restricted. In this paper, we investigate the positive impact directional antennas can have on the reduction of these two types of interference. We study a two-dimensional geometric channel model in order to understand and acquire insight regarding the multipath effects on the SI caused by scatterers. Moreover, we provide a performance analysis for the uplink in large-scale FD cellular networks and model the impact of passive suppression on the network's performance. The derived results show the significant performance gains that can be achieved by the employment of directional antennas.","PeriodicalId":431569,"journal":{"name":"2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121235887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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