Pub Date : 1995-11-01DOI: 10.1109/EDMO.1995.493713
Y. Baeyens, D. Schreurs, B. Nauwelaers, K. van der Zanden, M. Van Hove, W. De Raedt, M. Van Rossum
This work compares the high-frequency performance of both single and dual-gate GaAs PM and InP LM HEMTs with a gatelength of 0.15 /spl mu/m. Dual-gate cascode HEMTs realised in both technologies show state-of-the-art microwave gain at 10 GHz: 24.2 dB and 27 dB for GaAs PHEMT and InP LM HEMTs respectively. Using dual-gate HEMTs, different coplanar MMIC circuits were designed and successfully realised. Two examples are presented: a GaAs PHEMT distributed amplifier with a gain-bandwidth product of 185 GHz and a small-band one-stage reactively matched amplifier having a gain of more than 20 dB at 23 GHz for both the GaAs and InP-based realisation.
{"title":"GaAs and InP-based dual-gate HEMTs for high-gain MMIC amplifiers","authors":"Y. Baeyens, D. Schreurs, B. Nauwelaers, K. van der Zanden, M. Van Hove, W. De Raedt, M. Van Rossum","doi":"10.1109/EDMO.1995.493713","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493713","url":null,"abstract":"This work compares the high-frequency performance of both single and dual-gate GaAs PM and InP LM HEMTs with a gatelength of 0.15 /spl mu/m. Dual-gate cascode HEMTs realised in both technologies show state-of-the-art microwave gain at 10 GHz: 24.2 dB and 27 dB for GaAs PHEMT and InP LM HEMTs respectively. Using dual-gate HEMTs, different coplanar MMIC circuits were designed and successfully realised. Two examples are presented: a GaAs PHEMT distributed amplifier with a gain-bandwidth product of 185 GHz and a small-band one-stage reactively matched amplifier having a gain of more than 20 dB at 23 GHz for both the GaAs and InP-based realisation.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126554636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/EDMO.1995.493693
G. Crow, R. Abram
A self-consistent ensemble Monte Carlo calculation of carrier transport in a multiple quantum well laser has been developed in an effort to understand the impact of picosecond carrier dynamics upon the modulation bandwidth. The model has been applied to an InP based system designed to emit at 1.55 /spl mu/m. The device consists of three unstrained 80 /spl Aring/ InGaAs wells bounded by 700 /spl Aring/ wide ungraded InGaAsP (1.25 /spl mu/m) confinement barriers. Results from simulations carried out at fixed bias are discussed, and the frequency response has been derived from a modulated bias simulation.
{"title":"Monte Carlo simulations of carrier transport in high speed quantum well lasers","authors":"G. Crow, R. Abram","doi":"10.1109/EDMO.1995.493693","DOIUrl":"https://doi.org/10.1109/EDMO.1995.493693","url":null,"abstract":"A self-consistent ensemble Monte Carlo calculation of carrier transport in a multiple quantum well laser has been developed in an effort to understand the impact of picosecond carrier dynamics upon the modulation bandwidth. The model has been applied to an InP based system designed to emit at 1.55 /spl mu/m. The device consists of three unstrained 80 /spl Aring/ InGaAs wells bounded by 700 /spl Aring/ wide ungraded InGaAsP (1.25 /spl mu/m) confinement barriers. Results from simulations carried out at fixed bias are discussed, and the frequency response has been derived from a modulated bias simulation.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114864618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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