Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360278
X. Liu, S. Yin, Yingzhe Wu, Minghai Dong, Hui Li
Gallium nitride (GaN) high electron mobility transistor (HEMT) is a promising candidate for the high-efficiency and high-frequency motor drive applications when compared with the silicon (Si) counterpart. In this work, the GaN-based and Si-based devices based full bridge converters for DC motor drive are investigated and compared. Firstly, three different driving schemes including bipolar, unipolar and synchronous rectification are analyzed. Then, performance comparison between 40-V/l0-A GaN HEMT and Si MOSFET are conducted based on the datasheet and double pulse test experiment results. Finally, the model of DC motor drive is proposed based on PLECS thermal simulation. Based on the model, the impact of three schemes and two different switches on the efficiency is investigated. Results show the GaN-based full-bridge converter has higher efficiency and lower power loss.
与硅(Si)晶体管相比，氮化镓(GaN)高电子迁移率晶体管(HEMT)在高效高频电机驱动应用中具有广阔的前景。本文对基于氮化镓和硅的直流电机驱动全桥变换器进行了研究和比较。首先，分析了双极、单极和同步整流三种不同的驱动方案。然后，根据数据表和双脉冲测试实验结果，对40 v / 10 a GaN HEMT和Si MOSFET的性能进行了比较。最后，提出了基于PLECS热仿真的直流电机驱动模型。在此基础上，研究了三种方案和两种开关对效率的影响。结果表明，基于氮化镓的全桥变换器具有更高的效率和更低的功耗。
{"title":"Investigation of GaN and Si Based Full-Bridge Converters for DC Motor Drive","authors":"X. Liu, S. Yin, Yingzhe Wu, Minghai Dong, Hui Li","doi":"10.1109/WiPDAAsia49671.2020.9360278","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360278","url":null,"abstract":"Gallium nitride (GaN) high electron mobility transistor (HEMT) is a promising candidate for the high-efficiency and high-frequency motor drive applications when compared with the silicon (Si) counterpart. In this work, the GaN-based and Si-based devices based full bridge converters for DC motor drive are investigated and compared. Firstly, three different driving schemes including bipolar, unipolar and synchronous rectification are analyzed. Then, performance comparison between 40-V/l0-A GaN HEMT and Si MOSFET are conducted based on the datasheet and double pulse test experiment results. Finally, the model of DC motor drive is proposed based on PLECS thermal simulation. Based on the model, the impact of three schemes and two different switches on the efficiency is investigated. Results show the GaN-based full-bridge converter has higher efficiency and lower power loss.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128958858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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