Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360269
E. Gurpinar, Raj Sahu, B. Ozpineci, D. DeVoto
In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.
{"title":"Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module","authors":"E. Gurpinar, Raj Sahu, B. Ozpineci, D. DeVoto","doi":"10.1109/WiPDAAsia49671.2020.9360269","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360269","url":null,"abstract":"In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129576952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360262
Lubin Han, Lin Liang, Yong Kang
In order to study the mechanisms of SiC IGBT, optimize the SiC IGBT based power conversion system and predict the electro-thermal performance of the circuits, a simple, high-speed and accurate behavioral model of SiC IGBT is proposed. In this model, three controlled current sources are used to simulate the voltage and displacement current of the three parasitic capacitors of SiC IGBT. The other two controlled current sources are used to simulate the I-V characteristics and tail current characteristics of SiC IGBT respectively. In the model, the interpolation method instead of the conventional polynomial fitting method is adopted, which could simulate the static I-V characteristics and C-V characteristics more accurately. The method to extract the C-V curves by using dv/dt and displacement current is proposed, which could accurately simulate the punch-through effect of SiC IGBT under high voltage. The proposed model is more concise, more accurate and faster than the existing complex physical based mathematical model, which is suitable for system level circuit simulation based on SiC IGBT.
{"title":"A SiC IGBT Behavioral Model with High Accuracy and Fast Convergence","authors":"Lubin Han, Lin Liang, Yong Kang","doi":"10.1109/WiPDAAsia49671.2020.9360262","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360262","url":null,"abstract":"In order to study the mechanisms of SiC IGBT, optimize the SiC IGBT based power conversion system and predict the electro-thermal performance of the circuits, a simple, high-speed and accurate behavioral model of SiC IGBT is proposed. In this model, three controlled current sources are used to simulate the voltage and displacement current of the three parasitic capacitors of SiC IGBT. The other two controlled current sources are used to simulate the I-V characteristics and tail current characteristics of SiC IGBT respectively. In the model, the interpolation method instead of the conventional polynomial fitting method is adopted, which could simulate the static I-V characteristics and C-V characteristics more accurately. The method to extract the C-V curves by using dv/dt and displacement current is proposed, which could accurately simulate the punch-through effect of SiC IGBT under high voltage. The proposed model is more concise, more accurate and faster than the existing complex physical based mathematical model, which is suitable for system level circuit simulation based on SiC IGBT.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"1 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132610131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360268
H. Yoshioka, J. Furuta, Kazutoshi Kobayashi
This paper proposes a boost DC-DC converter with turn-on zero current switching (ZCS) capability to suppress electromagnetic interference (EMI) generated from an output diode. When a switching component turn on, reverse current flows from the output diode. In SiC-SBD, reverse recovery time is very short and conduction loss is small, but noise is increased by switching speed over MHz. By operating in discontinuous current mode, noise at turn-on can be reduced. However, at high frequency over MHz, the conduction loss increases because peak current flowing through the switching component and inductor increases. Radiated EMI of the boost DC-DC converter is reduced by the ZCS soft switching at turn on operating in the continuous current mode. Measurement results of EMI of the ZCS DC-DC converter were presented to confirm EMI suppression from the ZCS operation.
{"title":"A 1 MHz Boost DC-DC Converter with Turn on ZCS Capability to Reduce EMI","authors":"H. Yoshioka, J. Furuta, Kazutoshi Kobayashi","doi":"10.1109/WiPDAAsia49671.2020.9360268","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360268","url":null,"abstract":"This paper proposes a boost DC-DC converter with turn-on zero current switching (ZCS) capability to suppress electromagnetic interference (EMI) generated from an output diode. When a switching component turn on, reverse current flows from the output diode. In SiC-SBD, reverse recovery time is very short and conduction loss is small, but noise is increased by switching speed over MHz. By operating in discontinuous current mode, noise at turn-on can be reduced. However, at high frequency over MHz, the conduction loss increases because peak current flowing through the switching component and inductor increases. Radiated EMI of the boost DC-DC converter is reduced by the ZCS soft switching at turn on operating in the continuous current mode. Measurement results of EMI of the ZCS DC-DC converter were presented to confirm EMI suppression from the ZCS operation.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131859648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360289
K. Sakamoto, Atsushi Yamaguchi, K. Nakahara
The compatibility of high switching-frequency $(f_{sw})$ and high efficiency is achieved using GaN transistors in 48 V-12 V isolation-type DC/DC converter. High fsw increases power loss, but generate a downward trend for the required magnetic flux per switch. Hence, an optimal fsw is found for gaining the compatibility. The prior-to-experiment loss estimation proves that $f_{sw}sim 2$ MHz is optimal, and a converter with the size of 25.0 mm $times$16.8 mm $times$ 4.5 mm is made assuming that GaN-FETs are employed. With an air-cooled condition of 2m/s, this converter can transfer 129 W output power and its maximum power conversion efficiency reach to 95.3%.
在48v - 12v隔离型DC/DC变换器中采用GaN晶体管，实现了高开关频率和高效率的兼容。高fsw增加了功率损耗，但产生了每开关所需磁通的下降趋势。因此，找到了获得兼容性的最佳fsw。实验前损耗估计证明了$f_{sw}sim 2$ MHz是最优的，并且假设使用gan - fet，得到了一个尺寸为25.0 mm $ $ × 16.8 mm $ $ × 4.5 mm的变换器。在2m/s的风冷工况下，该变流器输出功率可达129 W，最大功率转换效率可达95.3%。
{"title":"48 V-12 V Isolated-type DC/DC converter miniaturized using GaN transistors and operating at 2-MHz switching frequency Koki Sakamoto Atsushi Yamaguchi Ken Nakahara","authors":"K. Sakamoto, Atsushi Yamaguchi, K. Nakahara","doi":"10.1109/WiPDAAsia49671.2020.9360289","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360289","url":null,"abstract":"The compatibility of high switching-frequency $(f_{sw})$ and high efficiency is achieved using GaN transistors in 48 V-12 V isolation-type DC/DC converter. High fsw increases power loss, but generate a downward trend for the required magnetic flux per switch. Hence, an optimal fsw is found for gaining the compatibility. The prior-to-experiment loss estimation proves that $f_{sw}sim 2$ MHz is optimal, and a converter with the size of 25.0 mm $times$16.8 mm $times$ 4.5 mm is made assuming that GaN-FETs are employed. With an air-cooled condition of 2m/s, this converter can transfer 129 W output power and its maximum power conversion efficiency reach to 95.3%.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129216032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360290
Masamichi Yamaguchi, K. Kusaka, J. Itoh
This paper presents an analysis of the PCB pattern, which is for a high-frequency inverter circuit. In a high-frequency inverter circuit, the design of the snubber circuit, which suppresses surge voltage, is essential to achieve kilowatt operation. The authors are aiming to simulate a surge voltage in order to decide the parameters of the snubber circuit. In this paper, the surge voltage is simulated using the analysis result of the PCB and the models of the passive components. Furthermore, the surge voltage with changing the snubber capacitor is evaluated in order to make the relationship between the surge voltage and the snubber circuit parameters as the first step of the parameters design by using simulation.
{"title":"Parasitic Parameters Analysis and Design of Snubber Circuit on PCB for High-frequency Wireless Power Transfer","authors":"Masamichi Yamaguchi, K. Kusaka, J. Itoh","doi":"10.1109/WiPDAAsia49671.2020.9360290","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360290","url":null,"abstract":"This paper presents an analysis of the PCB pattern, which is for a high-frequency inverter circuit. In a high-frequency inverter circuit, the design of the snubber circuit, which suppresses surge voltage, is essential to achieve kilowatt operation. The authors are aiming to simulate a surge voltage in order to decide the parameters of the snubber circuit. In this paper, the surge voltage is simulated using the analysis result of the PCB and the models of the passive components. Furthermore, the surge voltage with changing the snubber capacitor is evaluated in order to make the relationship between the surge voltage and the snubber circuit parameters as the first step of the parameters design by using simulation.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"380 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127898663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360265
Mehadi Hasan Ziko, A. Koel, T. Rang
Silicon carbide (SiC) is a wide-bandgap (WBG) semiconductor material with high thermal conductivity and radiation harness that have good potential to develop a new generation of power devices for operating at the higher temperature, high frequency, high power applications. In this paper, various manufacturing process (MP) parameters of diffusion welding (DW) p-type 4H-SiC Schottky contact developments are studied. Deposition temperature and pressure influence the DW Schottky barrier diodes (SBD) electrical characteristics and observed their barrier inhomogeneity. The lower doping concentration in the epilayer improves the Schottky contact characteristics with the same MP parameters. Additionally, Schottky contact with DW deposition technology shows better electrical contact compare to ion-sputtering deposition technique. Furthermore, temperature dependency of forward current-voltage (I–V), capacitance-voltage (C–V), and barrier height correspond to ideality factors measurements of DW two-MP parameters shows that there are higher barrier inhomogeneities at the metal and SiC interface compare to one-MP parameters for Aluminum (Al)-foil/p 4H–SiC SBDs.
{"title":"Characterization of Al-foil/p -4H-SiC SBDs Fabricated by DW with Variation of Process Conditions","authors":"Mehadi Hasan Ziko, A. Koel, T. Rang","doi":"10.1109/WiPDAAsia49671.2020.9360265","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360265","url":null,"abstract":"Silicon carbide (SiC) is a wide-bandgap (WBG) semiconductor material with high thermal conductivity and radiation harness that have good potential to develop a new generation of power devices for operating at the higher temperature, high frequency, high power applications. In this paper, various manufacturing process (MP) parameters of diffusion welding (DW) p-type 4H-SiC Schottky contact developments are studied. Deposition temperature and pressure influence the DW Schottky barrier diodes (SBD) electrical characteristics and observed their barrier inhomogeneity. The lower doping concentration in the epilayer improves the Schottky contact characteristics with the same MP parameters. Additionally, Schottky contact with DW deposition technology shows better electrical contact compare to ion-sputtering deposition technique. Furthermore, temperature dependency of forward current-voltage (I–V), capacitance-voltage (C–V), and barrier height correspond to ideality factors measurements of DW two-MP parameters shows that there are higher barrier inhomogeneities at the metal and SiC interface compare to one-MP parameters for Aluminum (Al)-foil/p 4H–SiC SBDs.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124358153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360294
Kentaro Nakayama, N. Satoh
Lithium-ion batteries (LiBs) have been widely used as consumer rechargeable batteries. We use the flyback topology, which is a type of isolated DC/DC converter, as the boosting circuit for an LiB. In this study, the flyback converter is operated with a single LiB in both the main and gate drive circuits. The switching frequency of conventional flyback converters is in the range of several hundred kHz. However, we aim to drive the flyback converter at 2.1MHz. Accordingly, Si and GaN devices are compared, and Liqualloy magnetic materials are investigated. Then, the components suitable for our field of use are reexamined. Additionally, our approach for the parallelization of the circuit to compensate for the drop in the output voltage of the LiB is described.
{"title":"A Study on MHz Switching Operation in Flyback Converter for Lithium Ion Battery and its Parallelization","authors":"Kentaro Nakayama, N. Satoh","doi":"10.1109/WiPDAAsia49671.2020.9360294","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360294","url":null,"abstract":"Lithium-ion batteries (LiBs) have been widely used as consumer rechargeable batteries. We use the flyback topology, which is a type of isolated DC/DC converter, as the boosting circuit for an LiB. In this study, the flyback converter is operated with a single LiB in both the main and gate drive circuits. The switching frequency of conventional flyback converters is in the range of several hundred kHz. However, we aim to drive the flyback converter at 2.1MHz. Accordingly, Si and GaN devices are compared, and Liqualloy magnetic materials are investigated. Then, the components suitable for our field of use are reexamined. Additionally, our approach for the parallelization of the circuit to compensate for the drop in the output voltage of the LiB is described.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130135074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360250
Yingjie Yang, Lin Liang, Hai Shang, Yong Kang, Hui Yan
SiC drift step recovery diode (DSRD) could be applied in the field of nanosecond high-power pulses. There is a demand for packaging for higher voltage and higher speed SiC DSRD. This paper proposes a stacked structure consisting of several high voltage SiC DSRD chips connected in series by rigid press-pack packaging. Finite element simulations performed to investigate the parasitic parameter, thermal performance in the packaging show that the packaging gets low parasitic inductance of about 3.5 nH and favorable heat dissipation capability. For the high-voltage SiC DSRD press-pack modules, the high field concentration around the DSRD chips is more critical. The objective is to build uniform electric field by structural optimization. A methodology to optimize the length of the metal conductive layer inside the packaging is proposed. Finally, the impact of the length on the electric field distribution is investigated quantitatively with Maxwell simulations. The electric field optimization brought by the platform reduces the maximum electric field intensity by 16%, which provides a packaging design reference for the upcoming high-voltage SiC DSRD devices.
{"title":"Design of Press-Pack Packaging for High Voltage SiC DSRD Stack","authors":"Yingjie Yang, Lin Liang, Hai Shang, Yong Kang, Hui Yan","doi":"10.1109/WiPDAAsia49671.2020.9360250","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360250","url":null,"abstract":"SiC drift step recovery diode (DSRD) could be applied in the field of nanosecond high-power pulses. There is a demand for packaging for higher voltage and higher speed SiC DSRD. This paper proposes a stacked structure consisting of several high voltage SiC DSRD chips connected in series by rigid press-pack packaging. Finite element simulations performed to investigate the parasitic parameter, thermal performance in the packaging show that the packaging gets low parasitic inductance of about 3.5 nH and favorable heat dissipation capability. For the high-voltage SiC DSRD press-pack modules, the high field concentration around the DSRD chips is more critical. The objective is to build uniform electric field by structural optimization. A methodology to optimize the length of the metal conductive layer inside the packaging is proposed. Finally, the impact of the length on the electric field distribution is investigated quantitatively with Maxwell simulations. The electric field optimization brought by the platform reduces the maximum electric field intensity by 16%, which provides a packaging design reference for the upcoming high-voltage SiC DSRD devices.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134525387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360270
Diang Xing, Chen Xie, Ke Wang, Tianshi Liu, Boxue Hu, Jin Wang, A. Agarwal, R. Singh, S. Atcitty
This paper compares the long-channel and short-channel 3300-V, 5-A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) manufactured by GeneSiC regarding static characteristics and short-circuit (SC) sustaining capability. Their saturation currents were measured up to 2200-V drain bias at different gate voltages. The SC withstand times of two types of devices were measured at 2200-V drain voltage and 1S-V gate voltage. Their SC test results were compared with 1200-V SiC MOSFETs from four different manufactures, which suggested that SiC MOSFETs with longer channel length should have longer sustaining times in a SC event. In addition, the device dynamic characteristic was evaluated. A comprehensive simulation program with integrated circuit emphasis (SPICE) model was developed based on the device test results.
本文比较了GeneSiC公司生产的长通道和短通道3300 v, 5-A碳化硅(SiC)金属氧化物半导体场效应晶体管(mosfet)的静态特性和短路维持能力。在不同的栅极电压下，测量了它们的饱和电流达到2200 v的漏极偏置。测量了两种器件在2200 v漏极电压和1s v栅极电压下的SC耐受次数。他们的SC测试结果与来自四个不同制造商的1200 v SiC mosfet进行了比较，这表明具有更长的沟道长度的SiC mosfet在SC事件中应该具有更长的持续时间。此外，还对器件的动态特性进行了评价。根据器件测试结果，开发了集成电路重点(SPICE)模型的综合仿真程序。
{"title":"3.3-kV SiC MOSFET Performance and Short-Circuit Capability","authors":"Diang Xing, Chen Xie, Ke Wang, Tianshi Liu, Boxue Hu, Jin Wang, A. Agarwal, R. Singh, S. Atcitty","doi":"10.1109/WiPDAAsia49671.2020.9360270","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360270","url":null,"abstract":"This paper compares the long-channel and short-channel 3300-V, 5-A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) manufactured by GeneSiC regarding static characteristics and short-circuit (SC) sustaining capability. Their saturation currents were measured up to 2200-V drain bias at different gate voltages. The SC withstand times of two types of devices were measured at 2200-V drain voltage and 1S-V gate voltage. Their SC test results were compared with 1200-V SiC MOSFETs from four different manufactures, which suggested that SiC MOSFETs with longer channel length should have longer sustaining times in a SC event. In addition, the device dynamic characteristic was evaluated. A comprehensive simulation program with integrated circuit emphasis (SPICE) model was developed based on the device test results.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133785651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360259
Bingyang Li, Kangping Wang, Hongkeng Zhu, Xu Yang, Laili Wang
The parasitic capacitances of a novel double-sided cooling structure of GaN power module are analyzed in this paper. Due to the additional top ceramic substrate of the structure, parasitic capacitances become more complex. By analysis, gate-source parasitic capacitance and gate-drain parasitic capacitance of all GaN devices and drain-source parasitic capacitance of upper GaN device of half bridge circuit are less than 1% of the corresponding intrinsic capacitances. However, the drain-source parasitic capacitance (14% of Coss) of bottom GaN device of half bridge circuit increases by 30% compared with traditional single-sided cooling module, which is acceptable since the thermal resistance of this structure is about halved.
{"title":"Parasitic Capacitances Characterization of Double-Sided Cooling Power Module Based on GaN Devices","authors":"Bingyang Li, Kangping Wang, Hongkeng Zhu, Xu Yang, Laili Wang","doi":"10.1109/WiPDAAsia49671.2020.9360259","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360259","url":null,"abstract":"The parasitic capacitances of a novel double-sided cooling structure of GaN power module are analyzed in this paper. Due to the additional top ceramic substrate of the structure, parasitic capacitances become more complex. By analysis, gate-source parasitic capacitance and gate-drain parasitic capacitance of all GaN devices and drain-source parasitic capacitance of upper GaN device of half bridge circuit are less than 1% of the corresponding intrinsic capacitances. However, the drain-source parasitic capacitance (14% of Coss) of bottom GaN device of half bridge circuit increases by 30% compared with traditional single-sided cooling module, which is acceptable since the thermal resistance of this structure is about halved.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116046559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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