Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387893
S. Patil, M. Koledintseva, R. W. Schwartz
Modeling of electrostatic field distribution and energy storage in diphasic dielectrics containing high-permittivity BaTiO3 in a glass host has been carried out using analytical modeling based on the Maxwell Garnett (MG) mixing rule, and numerical simulations accomplished using boundary element method (BEM) method software. The field distribution was studied as a function of the dielectric contrasts and volume fractions of the phases. For the geometry with a high-permittivity sphere enclosed in a low-permittivity glass cube it was found that a dielectric contrast of 75 and volume fraction of 46.8% led to higher energy storage densities than other geometries. For composites with lower volume fractions of high-permittivity inclusions, field enhancement factors of 2.6 were observed, whereas for higher volume fraction composites, field enhancements of 10 were noted. Higher field enhancement factors are expected to lead to dielectric breakdown at lower applied fields, limiting energy density. The upper limit of applicability of the MG formulation in terms of the inclusion volume fraction was also established and is a function of dielectric contrast. The host material permittivity causes a substantial variation in the applicability limit of the MG mixing rule, while the permittivity of inclusion phase does not affect the limit.
{"title":"Modeling of Field Distribution and Energy Storage in Diphasic Dielectrics","authors":"S. Patil, M. Koledintseva, R. W. Schwartz","doi":"10.1109/ISAF.2006.4387893","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387893","url":null,"abstract":"Modeling of electrostatic field distribution and energy storage in diphasic dielectrics containing high-permittivity BaTiO3 in a glass host has been carried out using analytical modeling based on the Maxwell Garnett (MG) mixing rule, and numerical simulations accomplished using boundary element method (BEM) method software. The field distribution was studied as a function of the dielectric contrasts and volume fractions of the phases. For the geometry with a high-permittivity sphere enclosed in a low-permittivity glass cube it was found that a dielectric contrast of 75 and volume fraction of 46.8% led to higher energy storage densities than other geometries. For composites with lower volume fractions of high-permittivity inclusions, field enhancement factors of 2.6 were observed, whereas for higher volume fraction composites, field enhancements of 10 were noted. Higher field enhancement factors are expected to lead to dielectric breakdown at lower applied fields, limiting energy density. The upper limit of applicability of the MG formulation in terms of the inclusion volume fraction was also established and is a function of dielectric contrast. The host material permittivity causes a substantial variation in the applicability limit of the MG mixing rule, while the permittivity of inclusion phase does not affect the limit.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116324414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387870
A. Parent, Oliver Le Traon, S. Masson, B. Le Foulgoc
A new piezoelectric Coriolis vibrating gyro (CVG) is presented in this article. There is a real need for integrated inertial sensors (e.g. for vehicle attitude control or inertial navigation) and ONERA (the French National Establishment for Aerospace Research) has been developing a quartz micromachined CVG called VIG (vibrating inertial gyro). Quartz was chosen in regard to its mechanical quality and temperature stability, but nevertheless the sensor resolution is limited by its low piezoelectric properties. To enhance CVG performances one possibility is to use stronger piezoelectric material (since the resolution is directly linked to piezoelectricity the material performance). As Perovskite ferroelectric materials are strongly piezoelectric - PZT ceramics (d31=150pC/N) are hundreds of times more piezoelectric than quartz (d11=2.3pC/N) -they offer new possibilities in CVG development. In this paper are presented the design, the performance and the resolution of a new monolithic piezoelectric CVG made of a PZT ceramic. Such a gyro could achieve a resolution of 0.2 deg/h. A brief discussion of key intrinsic material parameters is also made.
{"title":"Design and Performance of a PZT Coriolis Vibrating Gyro (CVG)","authors":"A. Parent, Oliver Le Traon, S. Masson, B. Le Foulgoc","doi":"10.1109/ISAF.2006.4387870","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387870","url":null,"abstract":"A new piezoelectric Coriolis vibrating gyro (CVG) is presented in this article. There is a real need for integrated inertial sensors (e.g. for vehicle attitude control or inertial navigation) and ONERA (the French National Establishment for Aerospace Research) has been developing a quartz micromachined CVG called VIG (vibrating inertial gyro). Quartz was chosen in regard to its mechanical quality and temperature stability, but nevertheless the sensor resolution is limited by its low piezoelectric properties. To enhance CVG performances one possibility is to use stronger piezoelectric material (since the resolution is directly linked to piezoelectricity the material performance). As Perovskite ferroelectric materials are strongly piezoelectric - PZT ceramics (d31=150pC/N) are hundreds of times more piezoelectric than quartz (d11=2.3pC/N) -they offer new possibilities in CVG development. In this paper are presented the design, the performance and the resolution of a new monolithic piezoelectric CVG made of a PZT ceramic. Such a gyro could achieve a resolution of 0.2 deg/h. A brief discussion of key intrinsic material parameters is also made.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122884143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387885
Y. Hiranaga, S. Hashimoto, N. Odagawa, K. Tanaka, Yasuo Cho
Recording density, domain switching time and bit error rate were evaluated using a data storage system based on scanning nonlinear dielectric microscopy. Congruent lithium tantalate single crystals with the thickness less than 50 nm were used as recording media. Local domain switching was carried out by applying voltage pulse on the recording media using a conductive cantilever. Close-packed domain dot arrays were written on the recording media. As a result of optimizing the writing pulse conditions, the dot array with the areal recording density of 10.1 Tbit/inch2 was successfully written. Subsequently, the thickness of recording media was reduced in order to improve the domain switching property, which determines the upper limit of data transfer rate. A nanodomain dot was formed by applying a 500-ps pulse on the 18-nm-thick recording medium. Actual information data were recorded for bit error tests. There were no bit errors in approximately ten-thousand-bit data under the areal recording density of 258 Gbit/inch2. It means bit error rate was less than 1x10-4. Additionally it was also confirmed that actual information data was recorded at the areal recording density of 0.98 Tbit/inch2 with a few bit errors.
{"title":"Nanodomain Manipulation for Ferroelectric Data Storage with High Recording Density, Fast Domain Switching and Low Bit Error Rate","authors":"Y. Hiranaga, S. Hashimoto, N. Odagawa, K. Tanaka, Yasuo Cho","doi":"10.1109/ISAF.2006.4387885","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387885","url":null,"abstract":"Recording density, domain switching time and bit error rate were evaluated using a data storage system based on scanning nonlinear dielectric microscopy. Congruent lithium tantalate single crystals with the thickness less than 50 nm were used as recording media. Local domain switching was carried out by applying voltage pulse on the recording media using a conductive cantilever. Close-packed domain dot arrays were written on the recording media. As a result of optimizing the writing pulse conditions, the dot array with the areal recording density of 10.1 Tbit/inch2 was successfully written. Subsequently, the thickness of recording media was reduced in order to improve the domain switching property, which determines the upper limit of data transfer rate. A nanodomain dot was formed by applying a 500-ps pulse on the 18-nm-thick recording medium. Actual information data were recorded for bit error tests. There were no bit errors in approximately ten-thousand-bit data under the areal recording density of 258 Gbit/inch2. It means bit error rate was less than 1x10-4. Additionally it was also confirmed that actual information data was recorded at the areal recording density of 0.98 Tbit/inch2 with a few bit errors.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132188450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387889
Lingjuan Che, Jinrong Cheng, Shengwen Yu, Chao Chen, Z. Meng
Polycrystalline lead zirconate titanate (PZT) thin films were synthesized on titanium substrates at a processing temperature of 160degC for 16 hours by using a hydrothermal method. The effects of KOH concentration on the phase evolution and morphology of the films were investigated. The as-synthesized PZT thin films using KOH concentration of 4 mol/1 have a dielectric constant and loss of 515 and 0.35 at 103 Hz respectively. The dielectric loss, tandelta and leakage current of hydrothermal PZT thin films were reduced by additional annealing at 100-400degC in air. Moreover, the annealed hydrothermal PZT thin films exhibit typical ferroelectric hysteresis loops at room temperature.
{"title":"Electrical Properties of Lead Zirconate Titanate Thin Films by a Hydrothermal Method","authors":"Lingjuan Che, Jinrong Cheng, Shengwen Yu, Chao Chen, Z. Meng","doi":"10.1109/ISAF.2006.4387889","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387889","url":null,"abstract":"Polycrystalline lead zirconate titanate (PZT) thin films were synthesized on titanium substrates at a processing temperature of 160degC for 16 hours by using a hydrothermal method. The effects of KOH concentration on the phase evolution and morphology of the films were investigated. The as-synthesized PZT thin films using KOH concentration of 4 mol/1 have a dielectric constant and loss of 515 and 0.35 at 103 Hz respectively. The dielectric loss, tandelta and leakage current of hydrothermal PZT thin films were reduced by additional annealing at 100-400degC in air. Moreover, the annealed hydrothermal PZT thin films exhibit typical ferroelectric hysteresis loops at room temperature.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131220833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-09-11DOI: 10.1109/ISE.2005.1612332
Franvois Bauer, Qiming Zhang, E. Fousson
Ferroelectric materials are intrinsically multifunctional and have found a broad range of applications. A new class of semicrystalline terpolymers comprising vinylidene fluoride (VDF), trifluoroefhylene (TrFE), and 1,1-chlorofluoroefhylene (CFE), were prepared at the Institut Franco-Allemand de Recherches in Saint-Louis (ISL) via a suspension polymerization process. Relevant studies and results show that this class of electroactive polymers offers unique properties in comparison with other ferroelectric polymers. The terpolymer exhibits high electrostrictive strain (>7%) with relatively high modulus (>0.3GPa). It has been also observed that the large electrostrictive strain is nearly constant in the temperature range from 20degC to 80degC. These terpolymers are strong candidates for new devices. Example of the motion and of the performance of terpolymer in a unimorph configuration is presented. The high room temperature relative dielectric constant (~50), which is the highest among all the known polymers, high induced polarization (~0.05 C/m2), and high electric breakdown field (>400 MV/m) lead to very high volume efficiency for the electric energy storage operated under high voltage (~10 J/cm3).
{"title":"Ferroelectric Relaxor Terpolymers: Properties and Potential Applications","authors":"Franvois Bauer, Qiming Zhang, E. Fousson","doi":"10.1109/ISE.2005.1612332","DOIUrl":"https://doi.org/10.1109/ISE.2005.1612332","url":null,"abstract":"Ferroelectric materials are intrinsically multifunctional and have found a broad range of applications. A new class of semicrystalline terpolymers comprising vinylidene fluoride (VDF), trifluoroefhylene (TrFE), and 1,1-chlorofluoroefhylene (CFE), were prepared at the Institut Franco-Allemand de Recherches in Saint-Louis (ISL) via a suspension polymerization process. Relevant studies and results show that this class of electroactive polymers offers unique properties in comparison with other ferroelectric polymers. The terpolymer exhibits high electrostrictive strain (>7%) with relatively high modulus (>0.3GPa). It has been also observed that the large electrostrictive strain is nearly constant in the temperature range from 20degC to 80degC. These terpolymers are strong candidates for new devices. Example of the motion and of the performance of terpolymer in a unimorph configuration is presented. The high room temperature relative dielectric constant (~50), which is the highest among all the known polymers, high induced polarization (~0.05 C/m2), and high electric breakdown field (>400 MV/m) lead to very high volume efficiency for the electric energy storage operated under high voltage (~10 J/cm3).","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128502454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/isaf.2006.4349296
T. Tsurumi, T. Teranishi, S. Wada, H. Kakemoto, M. Nakada, J. Akedo
The dielectric property varies significantly with the B-site cations in ABO3 perovskite-type oxides. In this study, we tried to understand the difference in the dielectric properties between SrTiO3 (STO, epsivr= 290, Qf = 3,000 GHz) and SrZrO3 (SZO, epsivr= 30, Qf = 13,700 GHz) by measuring dielectric spectroscopy of their solid solutions in a wide frequency range. The dielectric permittivity and the loss tangent (tan delta) of SrZrxTi1-xO3 (STZ, 0.0 les x les 1.0) ceramics were evaluated up to GHz region using planer electrode method and ring resonator method. The four-parameter-semi-quantum (FPSQ) model was employed to analyze the infrared-reflectivity (IR reflectivity) data of STZ ceramics. Both dielectric properties up to GHz region and IR reflectivity in THz region were incorporated in the analysis to accurately determine the optical phonon parameters. Ultra wide band dielectric spectra of STZ ceramics and STO single crystal were presented. The ionic polarization dominantly determined the dielectric permittivity of STZ ceramics and STO single crystal. High permittivity of STO was due to the Slater mode. The decrease of dielectric permittivity and Q-factor (= 1/tan delta) with increasing Zr content (x) in STZ ceramics was attributed to the depression of the Slater mode. The effect of optical phonon parameters on the permittivity and tan delta in microwave region was simulated to generalize the results obtained for STZ ceramics.
ABO3钙钛矿型氧化物的介电性能随b位阳离子的变化而显著变化。在本研究中，我们试图通过测量SrTiO3 (STO, epsivr= 290, Qf = 3,000 GHz)和SrZrO3 (SZO, epsivr= 30, Qf = 13,700 GHz)的固溶体在宽频率范围内的介电光谱来了解它们之间介电性能的差异。采用平面电极法和环形谐振器法测定了SrZrxTi1-xO3 (STZ, 0.0 les x les 1.0)陶瓷在GHz范围内的介电常数和损耗正切(tan delta)。采用四参数半量子(FPSQ)模型分析了STZ陶瓷的红外反射率(IR reflectivity)数据。为了准确地确定光学声子参数，在分析中考虑了GHz区域的介电特性和太赫兹区域的红外反射率。研究了STZ陶瓷和STO单晶的超宽带介电光谱。离子极化是决定STZ陶瓷和STO单晶介电常数的主要因素。STO的高介电常数是由Slater模式引起的。随着Zr含量(x)的增加，STZ陶瓷的介电常数和q因子(= 1/tan δ)的降低是由于Slater模式的抑制。模拟了光学声子参数对微波区介电常数和tan δ的影响，以推广STZ陶瓷的结果。
{"title":"Wide Range Dielectric Spectroscopy of SrTiO3-SrZrO3 Solid Solution","authors":"T. Tsurumi, T. Teranishi, S. Wada, H. Kakemoto, M. Nakada, J. Akedo","doi":"10.1109/isaf.2006.4349296","DOIUrl":"https://doi.org/10.1109/isaf.2006.4349296","url":null,"abstract":"The dielectric property varies significantly with the B-site cations in ABO3 perovskite-type oxides. In this study, we tried to understand the difference in the dielectric properties between SrTiO3 (STO, epsivr= 290, Qf = 3,000 GHz) and SrZrO3 (SZO, epsivr= 30, Qf = 13,700 GHz) by measuring dielectric spectroscopy of their solid solutions in a wide frequency range. The dielectric permittivity and the loss tangent (tan delta) of SrZrxTi1-xO3 (STZ, 0.0 les x les 1.0) ceramics were evaluated up to GHz region using planer electrode method and ring resonator method. The four-parameter-semi-quantum (FPSQ) model was employed to analyze the infrared-reflectivity (IR reflectivity) data of STZ ceramics. Both dielectric properties up to GHz region and IR reflectivity in THz region were incorporated in the analysis to accurately determine the optical phonon parameters. Ultra wide band dielectric spectra of STZ ceramics and STO single crystal were presented. The ionic polarization dominantly determined the dielectric permittivity of STZ ceramics and STO single crystal. High permittivity of STO was due to the Slater mode. The decrease of dielectric permittivity and Q-factor (= 1/tan delta) with increasing Zr content (x) in STZ ceramics was attributed to the depression of the Slater mode. The effect of optical phonon parameters on the permittivity and tan delta in microwave region was simulated to generalize the results obtained for STZ ceramics.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114791510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/isaf.2006.4387840
T. Watanabe, S. Hoffmann‐Eifert, R. Waser, C. Hwang
After an evaluation of Zr precursor, quaternary Pb(Zr,Ti)Ox [PZT] films were prepared by a combination of binary atomic layer deposition (ALD) processes. ZrOx films were deposited on Pt/TiOx/SiOx/Si substrates using liquid injection ALD. Zr(C11H19O2)4 [Zr(DPM)4] dissolved in ethylcyclohexane (ECH) with a concentration of 0.1 M and water were used as precursor and oxidant, respectively. According to the Arrhenius plot for the deposition rate of ZrOx films at various deposition temperatures, the Zr precursor appeared to start marked thermal decomposition at a deposition temperature of 360degC. Below this thermal decomposition temperature, a saturated deposition rate of ZrOx films against input of Zr precursor was confirmed. The saturated deposition rate was about 5-6x10-12 mol/cm2-cycle at a deposition temperature of 300degC. Subsequently, binary ALD processes of TiOx and PbO films, whose self-regulated growth mode has been already confirmed, were combined with the ZrOx process into multi-precursor ALD of PZT films. Ti(OC3H7)2(C11H19O2)2 [Ti(Oi-Pr)2(DPM)2] and Pb(C11H19O2)2 [Pb(DPM)2] dissolved in ECH with a concentration of 0.1 M were used for PZT film preparation as well as Zr(DPM)4. Unit sequences described as 1times(Pb-O)-2times(Ti-O) -ntimes(Zr-O) were repeated to deposit PZT films at 240degC. In the PZT process, the deposition rates of all cations were higher than those in their binary processes. The Pb/(Zr+Ti) and Zr/(Zr+Ti) ratio was adjusted by repeating the number of Zr-O cycles in a sequence. As-deposited PZT films were amorphous. Crystalline PZT films were obtained after annealing at 650degC, and the PZT crystal showed a preferred (100)/(001) orientation.
{"title":"Atomic Layer Deposition of Pb(Zr,Ti)Ox, Thin Films by a Combination of Binary Atomic Layer Deposition Processes","authors":"T. Watanabe, S. Hoffmann‐Eifert, R. Waser, C. Hwang","doi":"10.1109/isaf.2006.4387840","DOIUrl":"https://doi.org/10.1109/isaf.2006.4387840","url":null,"abstract":"After an evaluation of Zr precursor, quaternary Pb(Zr,Ti)O<sub>x</sub> [PZT] films were prepared by a combination of binary atomic layer deposition (ALD) processes. ZrO<sub>x</sub> films were deposited on Pt/TiO<sub>x</sub>/SiO<sub>x</sub>/Si substrates using liquid injection ALD. Zr(C<sub>11</sub>H<sub>19</sub>O<sub>2</sub>)<sub>4</sub> [Zr(DPM)<sub>4</sub>] dissolved in ethylcyclohexane (ECH) with a concentration of 0.1 M and water were used as precursor and oxidant, respectively. According to the Arrhenius plot for the deposition rate of ZrO<sub>x</sub> films at various deposition temperatures, the Zr precursor appeared to start marked thermal decomposition at a deposition temperature of 360degC. Below this thermal decomposition temperature, a saturated deposition rate of ZrO<sub>x</sub> films against input of Zr precursor was confirmed. The saturated deposition rate was about 5-6x10<sup>-12</sup> mol/cm<sup>2</sup>-cycle at a deposition temperature of 300degC. Subsequently, binary ALD processes of TiO<sub>x</sub> and PbO films, whose self-regulated growth mode has been already confirmed, were combined with the ZrO<sub>x</sub> process into multi-precursor ALD of PZT films. Ti(OC<sub>3</sub>H<sub>7</sub>)<sub>2</sub>(C<sub>11</sub>H<sub>19</sub>O<sub>2</sub>)<sub>2</sub> [Ti(O<i>i</i>-Pr)<sub>2</sub>(DPM)<sub>2</sub>] and Pb(C<sub>11</sub>H<sub>19</sub>O<sub>2</sub>)<sub>2</sub> [Pb(DPM)<sub>2</sub>] dissolved in ECH with a concentration of 0.1 M were used for PZT film preparation as well as Zr(DPM)<sub>4</sub>. Unit sequences described as 1times(Pb-O)-2times(Ti-O) -ntimes(Zr-O) were repeated to deposit PZT films at 240degC. In the PZT process, the deposition rates of all cations were higher than those in their binary processes. The Pb/(Zr+Ti) and Zr/(Zr+Ti) ratio was adjusted by repeating the number of Zr-O cycles in a sequence. As-deposited PZT films were amorphous. Crystalline PZT films were obtained after annealing at 650degC, and the PZT crystal showed a preferred (100)/(001) orientation.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128676470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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