Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387901
Y. Umehara, M. Kurosawa
A transducer for a micro ultrasonic scalpel has been fabricated. The micro ultrasonic scalpel can be used with an endoscope for a non-abdominal operation or micro surgery, for example, through a microscope. The ultrasonic transducer was 9.8 mm long and 2.7 mm wide and has stepped horn to amplify vibration velocity; tip of the horn is 0.6 mm wide. The scalpel vibrated in longitudinal mode at about 278 kHz resonance frequency. The piezoelectric material was lead zirconate titanate (PZT) that was deposited by the hydrothermal method. This is because the hydrothermal deposition film transducer has superior performance in vibration velocity. The vibration velocity at the tip of the horn in longitudinal direction was 4.0 m/s with 40 Vp-p driving voltage in both side electrodes. To demonstrate a beneficial effect of the scalpel, a cutting test that the transducer was stuck into pork fat was carried out. Efficient cutting performance was demonstrated using the transducer sized for an endoscope.
{"title":"A Micro Ultrasonic Scalpel Using Hydrothermal PZT Thin Film","authors":"Y. Umehara, M. Kurosawa","doi":"10.1109/ISAF.2006.4387901","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387901","url":null,"abstract":"A transducer for a micro ultrasonic scalpel has been fabricated. The micro ultrasonic scalpel can be used with an endoscope for a non-abdominal operation or micro surgery, for example, through a microscope. The ultrasonic transducer was 9.8 mm long and 2.7 mm wide and has stepped horn to amplify vibration velocity; tip of the horn is 0.6 mm wide. The scalpel vibrated in longitudinal mode at about 278 kHz resonance frequency. The piezoelectric material was lead zirconate titanate (PZT) that was deposited by the hydrothermal method. This is because the hydrothermal deposition film transducer has superior performance in vibration velocity. The vibration velocity at the tip of the horn in longitudinal direction was 4.0 m/s with 40 Vp-p driving voltage in both side electrodes. To demonstrate a beneficial effect of the scalpel, a cutting test that the transducer was stuck into pork fat was carried out. Efficient cutting performance was demonstrated using the transducer sized for an endoscope.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130957136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387845
F. Akhmedzhanov
New technology is offered for measuring and control of light intensity. In the proposed method the phenomenon of acoustical activity and Bragg light diffraction on hypersonic waves in ferroelectric crystal LiNbO3 is used. Control of light intensity can be realized by transference of crystal or by modification of generator frequency by which the transverse acoustic wave is excited. The change of light intensity is provided electronically, fluently and with high accuracy. Using previously the standard calibration, it is possible to measure and change the light intensity to the necessary value.
{"title":"Application of Acoustical Activity in Lithium Niobate Crystals for Control of Light Intensity","authors":"F. Akhmedzhanov","doi":"10.1109/ISAF.2006.4387845","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387845","url":null,"abstract":"New technology is offered for measuring and control of light intensity. In the proposed method the phenomenon of acoustical activity and Bragg light diffraction on hypersonic waves in ferroelectric crystal LiNbO3 is used. Control of light intensity can be realized by transference of crystal or by modification of generator frequency by which the transverse acoustic wave is excited. The change of light intensity is provided electronically, fluently and with high accuracy. Using previously the standard calibration, it is possible to measure and change the light intensity to the necessary value.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116291668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387852
S. Turner, T. Comyn, A. Bell
Sintered high density compacts from the BiFeQ3- PbTiO3 solid solution series were fabricated using conventional mixed-oxide techniques. The compacts were then prepared and examined using conventional X-ray diffraction. This surface measurement showed a large region of co-existence of two crystallographic phases, rhombohedral and tetragonal. Examination of the bulk material using transmission of synchrotron generated x-rays shows there to be a large difference between the surface and bulk structures. However, upon heat treatment, the structure at the surface transforms into a phase assemblage more closely resembling that of the bulk.
{"title":"Comparison of Surface and Bulk Crystal Structure in the xBiFeO3-(1-x)PbTiO3 Solid Solution System","authors":"S. Turner, T. Comyn, A. Bell","doi":"10.1109/ISAF.2006.4387852","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387852","url":null,"abstract":"Sintered high density compacts from the BiFeQ3- PbTiO3 solid solution series were fabricated using conventional mixed-oxide techniques. The compacts were then prepared and examined using conventional X-ray diffraction. This surface measurement showed a large region of co-existence of two crystallographic phases, rhombohedral and tetragonal. Examination of the bulk material using transmission of synchrotron generated x-rays shows there to be a large difference between the surface and bulk structures. However, upon heat treatment, the structure at the surface transforms into a phase assemblage more closely resembling that of the bulk.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122570179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387832
J. Sun, M. Vittadello, E. K. Akdoğan, A. Hall, N. M. Hagh, A. Safari
Lead zirconate titanate (PZT) thick films (6-70 mum) have been deposited on platinum coated alumina and silicon substrates using Micropentrade direct-write technique. Feedstock materials for Micropen deposition have been prepared by a modified sol-gel process in which different amounts of commercial PZT powder (15, 20, 25, 30 vol%) were dispersed in a stable PZT sol to achieve low temperature heat treatment conditions (700degC). The effects of the substrate, intermediate sol layer, film thickness, PZT content, and Micropen parameters on the resulting multi-layer PZT films have been investigated. The films using 15 vol% paste on Pt/Si substrate showed dielectric constant in the range 540-870, dielectric loss between 4.1 and 4.5 % at 1 kHz, remanent polarization (Pr) of 7-12 muC/cm2, and coercive field (Ec) of 24-30 kV/cm.
{"title":"Direct-Write Deposition of PZT Thick Films Derived from Modified Sol-Gel Process","authors":"J. Sun, M. Vittadello, E. K. Akdoğan, A. Hall, N. M. Hagh, A. Safari","doi":"10.1109/ISAF.2006.4387832","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387832","url":null,"abstract":"Lead zirconate titanate (PZT) thick films (6-70 mum) have been deposited on platinum coated alumina and silicon substrates using Micropentrade direct-write technique. Feedstock materials for Micropen deposition have been prepared by a modified sol-gel process in which different amounts of commercial PZT powder (15, 20, 25, 30 vol%) were dispersed in a stable PZT sol to achieve low temperature heat treatment conditions (700degC). The effects of the substrate, intermediate sol layer, film thickness, PZT content, and Micropen parameters on the resulting multi-layer PZT films have been investigated. The films using 15 vol% paste on Pt/Si substrate showed dielectric constant in the range 540-870, dielectric loss between 4.1 and 4.5 % at 1 kHz, remanent polarization (Pr) of 7-12 muC/cm2, and coercive field (Ec) of 24-30 kV/cm.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124971193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387905
Zhiyong Zhao, Yongdong Jiang, Xiaoyan Wang, Kwang Choi, A. Hunt
Combustion chemical vapor deposition (CCVD) has been used to grow a wide variety of ferroelectric thin films such as Ba1-xSrxTiO3 (BST) and PbZrxTi1-xO3 (PZT) on single crystal substrates. This paper presents the growth and characterization of epitaxial BST films on sapphire. Surface morphology, phase, and composition of the as -grown films were characterized. Planar gap capacitors were fabricated, and their capacitance, quality factor (Q) and tunability were investigated as a function of film thickness and DC bias. A 2:1 tunability was achieved for BST thin films under a DC bias of 10 V, and low-frequency Q can be as high as 100. Coplanar waveguide (CPW) structures were also designed and fabricated onto BST coated sapphire substrates. S-parameters of the CPW were tested using a vector network analyzer, and dielectric constant and loss tangent were then derived by comparing the measured data with electromagnetic (EM) simulation results. The dielectric constant was found to be in the range of 300-800, and a loss tangent of 0.05 at 40 GHz was achieved for a 300 nm thick BST film. The epitaxial BST films have been used to fabricate low-loss tunable filters and phase shifters with operation frequencies up to 40 GHz.
{"title":"Epitaxial Growth of Ferroelectric Thin Films by Combustion Chemical Vapor Deposition and Their Electrical Properties","authors":"Zhiyong Zhao, Yongdong Jiang, Xiaoyan Wang, Kwang Choi, A. Hunt","doi":"10.1109/ISAF.2006.4387905","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387905","url":null,"abstract":"Combustion chemical vapor deposition (CCVD) has been used to grow a wide variety of ferroelectric thin films such as Ba1-xSrxTiO3 (BST) and PbZrxTi1-xO3 (PZT) on single crystal substrates. This paper presents the growth and characterization of epitaxial BST films on sapphire. Surface morphology, phase, and composition of the as -grown films were characterized. Planar gap capacitors were fabricated, and their capacitance, quality factor (Q) and tunability were investigated as a function of film thickness and DC bias. A 2:1 tunability was achieved for BST thin films under a DC bias of 10 V, and low-frequency Q can be as high as 100. Coplanar waveguide (CPW) structures were also designed and fabricated onto BST coated sapphire substrates. S-parameters of the CPW were tested using a vector network analyzer, and dielectric constant and loss tangent were then derived by comparing the measured data with electromagnetic (EM) simulation results. The dielectric constant was found to be in the range of 300-800, and a loss tangent of 0.05 at 40 GHz was achieved for a 300 nm thick BST film. The epitaxial BST films have been used to fabricate low-loss tunable filters and phase shifters with operation frequencies up to 40 GHz.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125118759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387862
Wei Shi, Qiang Chen, D. Lan, Lin Chen, Wei Huang, D. Xiao, Jianguo Zhu
(1-x)Pb(Sc0.5Ta0.5)O3-xPb(Zr0.52Ti0.48)O3 (PSTZT-100x) ceramics were prepared by using conventional oxide processing, and their piezoelectric and ferroelectric properties studied. The results of X-ray diffraction (XRD) suggest that PSTZT-100x ceramics formed a single-phase perovskite structure when 0.1lesxles0.8. The ceramics exhibit relatively good piezoelectric and ferroelectric properties: piezoelectric constant, d33=117 pC/N; planar electromechanical coupling factor, kp=45%, remnant polarization, Pr=14 muC/cm2, coercive field, Ec=0.65 kV/mm. The morphotropic phase boundary (MPB) of PSTZT-100x maybe located at x=0.75 because of the maximum piezoelectric constant d33 achieved at x=0.75. The pinched hysteresis loops were founded for PSTZT-100x ceramics when x>0.7, and it was suggested that the pinched ferroelectric loops due to the pinning effect of the dipolar defects formed in PSTZT-100x ceramics.
{"title":"Piezoelectric and Ferroelectric Properties of (1-x)Pb(Sc0.5Ta0.5)O3-xPb(Zr0.52Ti0.48)O3 Relaxor Ferroelectric Ceramics","authors":"Wei Shi, Qiang Chen, D. Lan, Lin Chen, Wei Huang, D. Xiao, Jianguo Zhu","doi":"10.1109/ISAF.2006.4387862","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387862","url":null,"abstract":"(1-x)Pb(Sc<sub>0.5</sub>Ta<sub>0.5</sub>)O<sub>3</sub>-xPb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> (PSTZT-100x) ceramics were prepared by using conventional oxide processing, and their piezoelectric and ferroelectric properties studied. The results of X-ray diffraction (XRD) suggest that PSTZT-100x ceramics formed a single-phase perovskite structure when 0.1lesxles0.8. The ceramics exhibit relatively good piezoelectric and ferroelectric properties: piezoelectric constant, d<sub>33</sub>=117 pC/N; planar electromechanical coupling factor, k<sub>p</sub>=45%, remnant polarization, P<sub>r</sub>=14 muC/cm<sup>2</sup>, coercive field, E<sub>c</sub>=0.65 kV/mm. The morphotropic phase boundary (MPB) of PSTZT-100x maybe located at x=0.75 because of the maximum piezoelectric constant d<sub>33</sub> achieved at x=0.75. The pinched hysteresis loops were founded for PSTZT-100x ceramics when x>0.7, and it was suggested that the pinched ferroelectric loops due to the pinning effect of the dipolar defects formed in PSTZT-100x ceramics.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126317657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4349274
Ting Yu, K. Kwok, H. Chan
Bi1/2Na1/2TiO3 (abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650degC. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.
{"title":"Sol-gel derived lead-free piezoelectric Bi1/2Na1/2TiO3 thin film for MEMS applications","authors":"Ting Yu, K. Kwok, H. Chan","doi":"10.1109/ISAF.2006.4349274","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4349274","url":null,"abstract":"Bi1/2Na1/2TiO3 (abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650degC. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131061939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387888
Y. Genenko, N. Balke, D. Lupascu
Point defect migration is considered as a mechanism to yield aging in ferroelectrics. Different from magnetic systems, ferroelectric domains can be pinned by free charges at the perimeter of otherwise homogeneous grains or crystals. This clamping is shown to be stronger due to the reorientation of defect dipoles. Clamping stresses are calculated to be in the range of 106 to 107 Pa in a uniaxial model corresponding to experimental values in the model material BaTiO3. Their time dependence is given in a uniaxial model case. An extension to three dimensions is discussed. The values are independent of the type of mobile defect charge carrier, electronic or ionic.
{"title":"Aging in Ferroelectrics, a Drift Approach","authors":"Y. Genenko, N. Balke, D. Lupascu","doi":"10.1109/ISAF.2006.4387888","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387888","url":null,"abstract":"Point defect migration is considered as a mechanism to yield aging in ferroelectrics. Different from magnetic systems, ferroelectric domains can be pinned by free charges at the perimeter of otherwise homogeneous grains or crystals. This clamping is shown to be stronger due to the reorientation of defect dipoles. Clamping stresses are calculated to be in the range of 106 to 107 Pa in a uniaxial model corresponding to experimental values in the model material BaTiO3. Their time dependence is given in a uniaxial model case. An extension to three dimensions is discussed. The values are independent of the type of mobile defect charge carrier, electronic or ionic.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"125 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129742508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387834
R. Wongmaneerung, R. Yimnirun, S. Ananta, R. Guo, A. Bhalla
In this work, the effect of two stage sintering and sintering temperature on dielectric properties of perovskite PbTiO3 ceramics are reported. High density lead titanate (PbTiO3) ceramics were prepared by a solid solution method. Several sintering temperatures were selected to prepare the samples. The dielectric constant of these samples was measured in a frequency range from 100 Hz to 1 MHz. Thermal expansion measurements on pure and doped samples under various thermal cycling and poling conditions were also done in order to understand the stress behavior of PbTiO3.
{"title":"Effect of Sintering Temperature on Thermal Expansion and Dielectric Properties of Pb TiO3 Ceramics Prepared under various sintering conditions","authors":"R. Wongmaneerung, R. Yimnirun, S. Ananta, R. Guo, A. Bhalla","doi":"10.1109/ISAF.2006.4387834","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387834","url":null,"abstract":"In this work, the effect of two stage sintering and sintering temperature on dielectric properties of perovskite PbTiO3 ceramics are reported. High density lead titanate (PbTiO3) ceramics were prepared by a solid solution method. Several sintering temperatures were selected to prepare the samples. The dielectric constant of these samples was measured in a frequency range from 100 Hz to 1 MHz. Thermal expansion measurements on pure and doped samples under various thermal cycling and poling conditions were also done in order to understand the stress behavior of PbTiO3.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123129611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387898
B. Belgacem, F. Calame, P. Muralt
Piezoelectric micro machined ultrasonic transducers (pMUT) are piezoelectric laminated plates operating at flexural modes. The pMUT's fabricated in this work contained a 4 mum thick lead zirconate titanate (PZT) thin film deposited by a sol-gel technique, and exhibiting a permittivity of epsivr=1200, and an effective transverse piezoelectric coefficient e31.f of 12 C/m2. A further optimization of the sol-gel process yielded larger grain diameters and consequently improved properties: epsivr=1600, e31.f of 16 C/m2. A design and micromachining concpet for easy scaling in frequency has been developed. The electromechanical coupling coefficient (k2) and the quality factor (Q) of rectangular clamped elements (with former PZT process) were measured as k2=4.4% and Q=145 in air for a low frequency transducer (@240 kHz). The 16.9 MHz transducer yielded values of Q=25 and k2 =3% in air. The effect of DC bias voltage on frequency and k2 has been studied.
{"title":"Piezoelectric Micromachined Ultrasonic Transducers based on PZT films","authors":"B. Belgacem, F. Calame, P. Muralt","doi":"10.1109/ISAF.2006.4387898","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387898","url":null,"abstract":"Piezoelectric micro machined ultrasonic transducers (pMUT) are piezoelectric laminated plates operating at flexural modes. The pMUT's fabricated in this work contained a 4 mum thick lead zirconate titanate (PZT) thin film deposited by a sol-gel technique, and exhibiting a permittivity of epsiv<sub>r</sub>=1200, and an effective transverse piezoelectric coefficient e<sub>31.f</sub> of 12 C/m<sup>2</sup>. A further optimization of the sol-gel process yielded larger grain diameters and consequently improved properties: epsiv<sub>r</sub>=1600, e<sub>31.f</sub> of 16 C/m<sup>2</sup>. A design and micromachining concpet for easy scaling in frequency has been developed. The electromechanical coupling coefficient (k<sup>2</sup>) and the quality factor (Q) of rectangular clamped elements (with former PZT process) were measured as k<sup>2</sup>=4.4% and Q=145 in air for a low frequency transducer (@240 kHz). The 16.9 MHz transducer yielded values of Q=25 and k<sup>2</sup> =3% in air. The effect of DC bias voltage on frequency and k<sup>2</sup> has been studied.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126563390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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