Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387899
Xiyun He, Xinsen Zheng, P. Qiu, W. Cheng, A. Ding
Crack free peroviskite 0.2PZN-0.8PZT (53/47) thick films up to 6.8 mum were prepared by a metallic-organic decomposition (MOD) process on platinum coated titanium (Pt/Ti) foil substrates by a dipping coating technique. The thick film exhibits a pure perovskite phase structure with dense and uniform microstructure. The dielectric, ferroelectric and piezoelectric properties of the thick film have been examined and discussed. A perfect ferroelectric P-E loop was observed. The efficient piezoelectric coefficient d33,f of the film was estimated by a standard Berlincourt type meter. The measured d33,f value of the 0.2PZN-0.8PZT (53/47) thick film is about 177 pC/N; it is larger than that of the PZT (53/47) thick film examined in the same condition, 98 pC/N. This 0.2PZN-0.8PZT (53/47) thick film promises a good application in the microelectronic devices.
{"title":"Relaxor Ferroelectric 0.2PZN-0.8PZT(53/47) Thick Films Fabricated Using a MOD Process","authors":"Xiyun He, Xinsen Zheng, P. Qiu, W. Cheng, A. Ding","doi":"10.1109/ISAF.2006.4387899","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387899","url":null,"abstract":"Crack free peroviskite 0.2PZN-0.8PZT (53/47) thick films up to 6.8 mum were prepared by a metallic-organic decomposition (MOD) process on platinum coated titanium (Pt/Ti) foil substrates by a dipping coating technique. The thick film exhibits a pure perovskite phase structure with dense and uniform microstructure. The dielectric, ferroelectric and piezoelectric properties of the thick film have been examined and discussed. A perfect ferroelectric P-E loop was observed. The efficient piezoelectric coefficient d33,f of the film was estimated by a standard Berlincourt type meter. The measured d33,f value of the 0.2PZN-0.8PZT (53/47) thick film is about 177 pC/N; it is larger than that of the PZT (53/47) thick film examined in the same condition, 98 pC/N. This 0.2PZN-0.8PZT (53/47) thick film promises a good application in the microelectronic devices.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114772252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387857
C. W. Ann, Haijoon Lee, S. Kang, Jae Young Lee, I. W. Kim, Jae‐Shin Lee
The anisotropy of polarization and strain behavior in textured Bi0.5(Na0.85K0.15)0.5TiO3 ceramics are investigated for lead-free piezoelectric ceramics actuators. The textured Bi0.5(Na0.85K0.15)0.5TiO3 ceramics are fabricated by reactive templated grain growth (RTGG) using plate-like Bi4Ti3O12 particles. RTGG[//] (sliced parallel to the casting direction) and RTGG[square] (sliced perpendicularly to the casting direction) specimens show preferred orientation to <001>pc and <110>pc, respectively. RTGG[//] specimen has relatively high piezoelectric coefficient of (d33) ~335 pm/V and electric field induced strain levels of 0.067% at 20 kV/cm. This values were 86% higher than those of RTGG[ square] specimen. <001>pc textured polycrystalline BNKT ceramics, prepared by RTGG, are a strong candidate for lead-free piezoelectric materials of actuators.
{"title":"High Strain and Piezoelectric Characteristics of Textured Bi0.5(Na0.85K0.15)0.5TiO3 Ceramics","authors":"C. W. Ann, Haijoon Lee, S. Kang, Jae Young Lee, I. W. Kim, Jae‐Shin Lee","doi":"10.1109/ISAF.2006.4387857","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387857","url":null,"abstract":"The anisotropy of polarization and strain behavior in textured Bi<sub>0.5</sub>(Na<sub>0.85</sub>K<sub>0.15</sub>)<sub>0.5</sub>TiO<sub>3</sub> ceramics are investigated for lead-free piezoelectric ceramics actuators. The textured Bi<sub>0.5</sub>(Na<sub>0.85</sub>K<sub>0.15</sub>)<sub>0.5</sub>TiO<sub>3</sub> ceramics are fabricated by reactive templated grain growth (RTGG) using plate-like Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> particles. RTGG[//] (sliced parallel to the casting direction) and RTGG[square] (sliced perpendicularly to the casting direction) specimens show preferred orientation to <001><sub>pc</sub> and <110><sub>pc</sub>, respectively. RTGG[//] specimen has relatively high piezoelectric coefficient of (d<sub>33</sub>) ~335 pm/V and electric field induced strain levels of 0.067% at 20 kV/cm. This values were 86% higher than those of RTGG[ square] specimen. <001><sub>pc</sub> textured polycrystalline BNKT ceramics, prepared by RTGG, are a strong candidate for lead-free piezoelectric materials of actuators.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134231786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387839
Lisa Malin, I. Stolichnov, P. Muralt, N. Setter
A PZT, Pb(Zr,Ti)O3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the concept of field-effect transistor with ferroelectric gate. The high temperature processing conditions for PZT were optimised in order to grow highly textured (111) PZT on the heterostructure without destroying the 2DEG. However, it was imperative to measure the transport properties in the 2DEG before and after the PZT deposition process in order to detect any degradation of the 2DEG due to diffusion. Hall measurements also enabled the observation of the partial depletion of electrons in the 2DEG, confirming the functionality of the ferroelectric gate. This depletion was due to a change of the spontaneous polarisation in the PZT layer when poled with a negatively biased voltage. These results are encouraging for the use of PZT as a ferroelectric gate on AlGaN/GaN heterostructures and may open new possibilities for semiconductor heterostructure nano-patterning by polarisation domain engineering.
{"title":"Ferroelectric Gate on AlGaN/GaN Heterostructures","authors":"Lisa Malin, I. Stolichnov, P. Muralt, N. Setter","doi":"10.1109/ISAF.2006.4387839","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387839","url":null,"abstract":"A PZT, Pb(Zr,Ti)O3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the concept of field-effect transistor with ferroelectric gate. The high temperature processing conditions for PZT were optimised in order to grow highly textured (111) PZT on the heterostructure without destroying the 2DEG. However, it was imperative to measure the transport properties in the 2DEG before and after the PZT deposition process in order to detect any degradation of the 2DEG due to diffusion. Hall measurements also enabled the observation of the partial depletion of electrons in the 2DEG, confirming the functionality of the ferroelectric gate. This depletion was due to a change of the spontaneous polarisation in the PZT layer when poled with a negatively biased voltage. These results are encouraging for the use of PZT as a ferroelectric gate on AlGaN/GaN heterostructures and may open new possibilities for semiconductor heterostructure nano-patterning by polarisation domain engineering.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133652981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387903
M. Roy, J. Richter
Tunable filters are critical size, weight, power, and cost (SWAP-C) enabling components for military radios: joint tactical radios (JTRS), weapons data link (WDL), tactical target networking technology (TTNT), and cognitive radios. The ability to tune (center frequency, bandwidth) and reconfigure (bandpass, notch) filters dynamically in the system allows agile communications. In this paper we will present experimental results on tunable radio frequency (RF) filters using low loss thin film high dielectric constant barium strontium titanate (BST) ceramics. The circuit design, simulation, and experimental results on 2-pole and 3-pole lumped circuit filters will be presented from VHF to L-band frequency ranges. Results will be shown on three tunable filters: 137-225 MHz, 450-750 MHz, and 1500-2000 MHz. These filters met all the critical performance specifications such as insertion loss < 3 dB, return loss < -15 dB, frequency tunability of 1.7:1, and input intercept point of +35 dBm for an operating bias voltage of 0-10V DC. These filters also exhibited the following features compared to PIN diode switched capacitor filters: Parts count reduction: 3X, area reduction: 4X, power reduction: > 10X, and assembly/tuning labor reduction: >>10X.
{"title":"Tunable Ferroelectric Filters for Software Defined Tactical Radios","authors":"M. Roy, J. Richter","doi":"10.1109/ISAF.2006.4387903","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387903","url":null,"abstract":"Tunable filters are critical size, weight, power, and cost (SWAP-C) enabling components for military radios: joint tactical radios (JTRS), weapons data link (WDL), tactical target networking technology (TTNT), and cognitive radios. The ability to tune (center frequency, bandwidth) and reconfigure (bandpass, notch) filters dynamically in the system allows agile communications. In this paper we will present experimental results on tunable radio frequency (RF) filters using low loss thin film high dielectric constant barium strontium titanate (BST) ceramics. The circuit design, simulation, and experimental results on 2-pole and 3-pole lumped circuit filters will be presented from VHF to L-band frequency ranges. Results will be shown on three tunable filters: 137-225 MHz, 450-750 MHz, and 1500-2000 MHz. These filters met all the critical performance specifications such as insertion loss < 3 dB, return loss < -15 dB, frequency tunability of 1.7:1, and input intercept point of +35 dBm for an operating bias voltage of 0-10V DC. These filters also exhibited the following features compared to PIN diode switched capacitor filters: Parts count reduction: 3X, area reduction: 4X, power reduction: > 10X, and assembly/tuning labor reduction: >>10X.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125853841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387876
J. Yoo, Sang-ho Lee, L. Hwang, Y. Jeong, Durkwon Park
In this study, in order to develop the composition ceramics for low loss and low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using Li2CO3 and Na2CO3 as sintering aids, and their piezoelectric and dielectric characteristics were investigated according to the amount of MnO2 addition. At the sintering temperature of 900 , density and mechanical quality factor (Qm) of specimen showed maximum value of 7.81[g/cm3], 1186 at 0.2wt% MnO2, electromechanical coupling factor (kp), piezoelectric constant (d33) of specimen showed the maximum value of 0.608, 377[pC/N] at 0.1 wt% MnO2 and dielectric constant (epsivr) slightly decreased with increasing MnO2. At the composition ceramics sintered at 900 C with 0.2 wt% MnO2, density, electromechanical coupling factor (kp), mechanical quality factor (Qm), dielectric constant (epsivr) and piezoelectric constant (d33) showed the optimum value of 7.81[g/cm3], 0.597, 1186, 919, 356[pC/N], respectively, for multilayer piezoelectric actuator application.
{"title":"Piezoelectric Properties of Low Loss and Low Temperature sintering PMN-PNN-PZT Ceramics According to the Amount of MnO2 Addition","authors":"J. Yoo, Sang-ho Lee, L. Hwang, Y. Jeong, Durkwon Park","doi":"10.1109/ISAF.2006.4387876","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387876","url":null,"abstract":"In this study, in order to develop the composition ceramics for low loss and low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using Li<sub>2</sub>CO<sub>3</sub> and Na<sub>2</sub>CO<sub>3</sub> as sintering aids, and their piezoelectric and dielectric characteristics were investigated according to the amount of MnO<sub>2</sub> addition. At the sintering temperature of 900 , density and mechanical quality factor (Q<sub>m</sub>) of specimen showed maximum value of 7.81[g/cm<sup>3</sup>], 1186 at 0.2wt% MnO<sub>2</sub>, electromechanical coupling factor (k<sub>p</sub>), piezoelectric constant (d<sub>33</sub>) of specimen showed the maximum value of 0.608, 377[pC/N] at 0.1 wt% MnO<sub>2</sub> and dielectric constant (epsiv<sub>r</sub>) slightly decreased with increasing MnO<sub>2</sub>. At the composition ceramics sintered at 900 C with 0.2 wt% MnO<sub>2</sub>, density, electromechanical coupling factor (k<sub>p</sub>), mechanical quality factor (Q<sub>m</sub>), dielectric constant (epsiv<sub>r</sub>) and piezoelectric constant (d<sub>33</sub>) showed the optimum value of 7.81[g/cm<sup>3</sup>], 0.597, 1186, 919, 356[pC/N], respectively, for multilayer piezoelectric actuator application.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122345449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387908
Bing Qin, D. Jin, Jinrong Cheng, Z. Meng
(Ba0.9-xSrxCa0.1)TiO3 (x=0.25~0.5) and (Ba0.6-ySr0.4Cay)TiO3 (y=0.05~0.2) ceramics were fabricated by the mixed-oxide method. All BSCT specimens owned dense and homogeneous structure without the second phase. By comparing the properties of (Ba0.9-xSrxCa0.1)TiO3 and (Ba0.6-ySr0.4Cay)TiO3, we found that the influence of Ba/Sr ratio on Curie temperature is greater than that of Ba/Ca ratio. The increasing of Ca content could decrease the dielectric loss and dielectric constants, but it would decrease the tunability as well. (Ba0.55Sr0.4Ca0.05)TiO3 and (Ba0.5Sr0.4Ca0.1)TiO3 are expected to be the candidate materials for microwave tunable devices, whose tunability, dielectric constant and loss were 24.1%, 4300, 0.28% and 16.5%, 3200, 0.096% respectively.
{"title":"Dielectric Properties of (Ba, Sr, Ca)TiO3 Ceramics for Tunable Microwave Devices","authors":"Bing Qin, D. Jin, Jinrong Cheng, Z. Meng","doi":"10.1109/ISAF.2006.4387908","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387908","url":null,"abstract":"(Ba<sub>0.9-x</sub>Sr<sub>x</sub>Ca<sub>0.1</sub>)TiO<sub>3</sub> (x=0.25~0.5) and (Ba<sub>0.6-y</sub>Sr<sub>0.4</sub>Ca<sub>y</sub>)TiO<sub>3</sub> (y=0.05~0.2) ceramics were fabricated by the mixed-oxide method. All BSCT specimens owned dense and homogeneous structure without the second phase. By comparing the properties of (Ba<sub>0.9-x</sub>Sr<sub>x</sub>Ca<sub>0.1</sub>)TiO<sub>3</sub> and (Ba<sub>0.6-y</sub>Sr<sub>0.4</sub>Ca<sub>y</sub>)TiO<sub>3</sub>, we found that the influence of Ba/Sr ratio on Curie temperature is greater than that of Ba/Ca ratio. The increasing of Ca content could decrease the dielectric loss and dielectric constants, but it would decrease the tunability as well. (Ba<sub>0.55</sub>Sr<sub>0.4</sub>Ca<sub>0.05</sub>)TiO<sub>3</sub> and (Ba<sub>0.5</sub>Sr<sub>0.4</sub>Ca<sub>0.1</sub>)TiO<sub>3</sub> are expected to be the candidate materials for microwave tunable devices, whose tunability, dielectric constant and loss were 24.1%, 4300, 0.28% and 16.5%, 3200, 0.096% respectively.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124550930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387829
B. Bender, M. Pan
A series of lead magnesium niobate-lead titanate ((1-x)Pb(Mg 1/3Nb 2/3)O3-xPbTiO3) relaxor ferroelectrics (PMN-PT) are being used in the composite design of a stable high temperature high permittivity ceramic dielectric. However, pure PMN has a dielectric maximum no lower than -10degC. To extend this range to lower temperatures niobium was replaced with tantalum. The tantalum-based component (PMTa-PT) is more refractory and does not sinter as easily as the PMN-PT components of the dielectric composite. The effect of lead oxide and lithium oxide as sintering aids was explored. Both dopants enhanced the sinterability of the tantalum-based component, while the lead oxide reduced its permittivity. At compositions above 0.70PMN-0.30PT, PMN-PT becomes less relaxor-like limiting the design of the stable dielectric to 140degC. To extend this range to higher temperatures a composite approach was taken. A series of four compositions between 0.63 to 0.65 PMN-PT was fabricated. Trilayer composites were made from these compositions with 0.70PMN-0.30PT. By varying the thickness of the composite layers an optimal configuration for the high-temperature component of the composite dielectric was determined which extended the dielectric stable temperature range of the composite dielectric to 185degC.
{"title":"The Effect of Doping and Composition on the Dielectric Properties and Sintering of a Lead Magnesium Niobate-Lead Titanate-Based Ceramic Dielectric Composite","authors":"B. Bender, M. Pan","doi":"10.1109/ISAF.2006.4387829","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387829","url":null,"abstract":"A series of lead magnesium niobate-lead titanate ((1-x)Pb(Mg 1/3Nb 2/3)O3-xPbTiO3) relaxor ferroelectrics (PMN-PT) are being used in the composite design of a stable high temperature high permittivity ceramic dielectric. However, pure PMN has a dielectric maximum no lower than -10degC. To extend this range to lower temperatures niobium was replaced with tantalum. The tantalum-based component (PMTa-PT) is more refractory and does not sinter as easily as the PMN-PT components of the dielectric composite. The effect of lead oxide and lithium oxide as sintering aids was explored. Both dopants enhanced the sinterability of the tantalum-based component, while the lead oxide reduced its permittivity. At compositions above 0.70PMN-0.30PT, PMN-PT becomes less relaxor-like limiting the design of the stable dielectric to 140degC. To extend this range to higher temperatures a composite approach was taken. A series of four compositions between 0.63 to 0.65 PMN-PT was fabricated. Trilayer composites were made from these compositions with 0.70PMN-0.30PT. By varying the thickness of the composite layers an optimal configuration for the high-temperature component of the composite dielectric was determined which extended the dielectric stable temperature range of the composite dielectric to 185degC.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"458 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132055955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387904
G. Subramanyam, R. Neidhard, K. Stamper, M. Calcatera
Our group has been investigating properties of nanostructured barium strontium titanate (BST) thin-films for use in a number of microwave/millimetre wave applications in collaboration with the Air Force Research Laboratory. Currently, a ferroelectric varactor shunt switch which can be useful for low power, low voltage microwave/millimeterwave switching is under investigation. A coplanar waveguide (CPW) based design provides Si MMIC compatible shunt switches for microwave and millimeterwave applications. The cascaded shunt switch consists of two ferroelectric varactor shunt switches with varactor area of 5times5 mum2 in cascade, separated by a section of a CPW line. The measured isolation of the device (at 0 V dc bias) was better than 35 dB at 35 GHz. The insertion loss of the device was below 4.5 dB up to 35 GHz. The useful bandwidth of operation for the cascaded switch is between 25 and 35 GHz as one can obtain a minimum isolation of 20 dB and maintain insertion loss below 4.5 dB. A single varactor shunt switch of 5times5 mum2 fabricated on the same chip, exhibited an isolation of ~15 dB at 30 GHz, and insertion loss of ~4 dB at 30 GHz. The experimental results confirmed the simulation results that cascaded shunt switch provides improved isolation, with insertion loss remaining closer to the single shunt switch.
{"title":"Improved RF Performance Characteristics of Cascaded Ferroelectric Varactor Shunt Switches","authors":"G. Subramanyam, R. Neidhard, K. Stamper, M. Calcatera","doi":"10.1109/ISAF.2006.4387904","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387904","url":null,"abstract":"Our group has been investigating properties of nanostructured barium strontium titanate (BST) thin-films for use in a number of microwave/millimetre wave applications in collaboration with the Air Force Research Laboratory. Currently, a ferroelectric varactor shunt switch which can be useful for low power, low voltage microwave/millimeterwave switching is under investigation. A coplanar waveguide (CPW) based design provides Si MMIC compatible shunt switches for microwave and millimeterwave applications. The cascaded shunt switch consists of two ferroelectric varactor shunt switches with varactor area of 5times5 mum2 in cascade, separated by a section of a CPW line. The measured isolation of the device (at 0 V dc bias) was better than 35 dB at 35 GHz. The insertion loss of the device was below 4.5 dB up to 35 GHz. The useful bandwidth of operation for the cascaded switch is between 25 and 35 GHz as one can obtain a minimum isolation of 20 dB and maintain insertion loss below 4.5 dB. A single varactor shunt switch of 5times5 mum2 fabricated on the same chip, exhibited an isolation of ~15 dB at 30 GHz, and insertion loss of ~4 dB at 30 GHz. The experimental results confirmed the simulation results that cascaded shunt switch provides improved isolation, with insertion loss remaining closer to the single shunt switch.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131740852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387849
Sang-Hyun Lim, A. Rastogi, S. Desu
The feasibility of nonvolatile memory (NvRAM) structure with nondestructive readout (NDRO) capability based on Si-MOSFET integrated with a ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (P(VDF-TrFE)) as a gate along with SiO2 buffer has been demonstrated. Measurement of channel current IDS shows no saturation due to uniform ferroelectric field across gate channel. Modulation of channel conductance is attributed to sensitively switchable polarization field. Remarkable switching drain current ratio of >105 times with ON/OFF operations were obtained. Memory window is obtained to show the polarization field regulating threshold voltages of the integrated organic polymer FET.
{"title":"Electrical characteristics of organic ferroelectric FET integrated with Si using P(VDF-TrFE) copolymer films for nonvolatile memory devices","authors":"Sang-Hyun Lim, A. Rastogi, S. Desu","doi":"10.1109/ISAF.2006.4387849","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387849","url":null,"abstract":"The feasibility of nonvolatile memory (NvRAM) structure with nondestructive readout (NDRO) capability based on Si-MOSFET integrated with a ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (P(VDF-TrFE)) as a gate along with SiO2 buffer has been demonstrated. Measurement of channel current IDS shows no saturation due to uniform ferroelectric field across gate channel. Modulation of channel conductance is attributed to sensitively switchable polarization field. Remarkable switching drain current ratio of >105 times with ON/OFF operations were obtained. Memory window is obtained to show the polarization field regulating threshold voltages of the integrated organic polymer FET.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"03 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127183611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387826
Y. Saito, H. Takao
Cubic perovskite-structured platelike SrTiO3 particles were synthesized by topochemical microcrystal conversion (TMC) method from platelike precursor of layer-structured SrBi4Ti4O15 particles. SrTiO3 particles inherited the shape of precursor particles having a thickness of about 0.5 microns and a width of 5-10 microns. X-ray diffraction measurement of cast particles on glass substrate elucidated that in the TMC reaction, the crystallographic {001} plane of SrBi4Ti4O15 is converted into the {100} plane of SrTiO3. With use of the platelike SrTiO3 particles as a template by templated grain growth method, dense {100} grain-oriented SrTiO3 ceramics having a {100} orientation degree (Logerring's factor) larger than 91% were fabricated at sintering temperatures between 1350degC to 1550degC. The maximum orientation factor was 99.3%. The textured ceramics had a unique microstructure of well aligned brick wall-like grains in the side face to tape-cast plane observed by scanning electron microscopy.
{"title":"Synthesizing of Platelike {100} SrTiO3 Particle by Topochemical Microcrystal Conversion Method","authors":"Y. Saito, H. Takao","doi":"10.1109/ISAF.2006.4387826","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387826","url":null,"abstract":"Cubic perovskite-structured platelike SrTiO<sub>3</sub> particles were synthesized by topochemical microcrystal conversion (TMC) method from platelike precursor of layer-structured SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> particles. SrTiO<sub>3</sub> particles inherited the shape of precursor particles having a thickness of about 0.5 microns and a width of 5-10 microns. X-ray diffraction measurement of cast particles on glass substrate elucidated that in the TMC reaction, the crystallographic {001} plane of SrBi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> is converted into the {100} plane of SrTiO<sub>3</sub>. With use of the platelike SrTiO<sub>3</sub> particles as a template by templated grain growth method, dense {100} grain-oriented SrTiO<sub>3</sub> ceramics having a {100} orientation degree (Logerring's factor) larger than 91% were fabricated at sintering temperatures between 1350degC to 1550degC. The maximum orientation factor was 99.3%. The textured ceramics had a unique microstructure of well aligned brick wall-like grains in the side face to tape-cast plane observed by scanning electron microscopy.","PeriodicalId":441219,"journal":{"name":"2006 15th ieee international symposium on the applications of ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130090412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：