Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091152
M. Yu, Qiang Li, Jie Yang, Yingxin Qiao, Jinyan Wang, Ru Huang, Xing Zhang
Using binomial distribution, we have created a structure to describe Si 1-x Ge x substrate, so ion implantation into Ge and Si 1-x Ge x can be simulated based on Molecular dynamics method. ZBL potential is applied to describe interaction between implanted ion and target atoms. David Cai's electronic stopping power model is applied to calculate collision between implanted ion and electronics. The results of boron implantation into pure Ge and Si 1-x Ge x are compared with SIMS data. The phenomenon of fluence loss due to surface sputtering and backscattering is investigated. Factors affecting range profile and fluence loss including Ge fraction and implant tilt is also presented in this paper.This electronic document is a "live" template. The various components of your paper [title, text, heads, etc.] are already defined on the style sheet, as illustrated by the portions given in this document.
我们利用二项分布建立了描述Si 1-x Ge x衬底的结构，从而可以基于分子动力学方法模拟离子注入Ge和Si 1-x Ge x的过程。ZBL势用于描述注入离子与靶原子之间的相互作用。采用David Cai的电子停止功率模型计算注入离子与电子之间的碰撞。硼注入纯Ge和Si 1-x Ge x的结果与SIMS数据进行了比较。研究了表面溅射和后向散射导致的通量损失现象。本文还介绍了影响范围轮廓和通量损失的因素，包括Ge分数和种植体倾斜。这个电子文档是一个“实时”模板。论文的各个组成部分[标题，正文，标题等]已经在样式表中定义，如本文档中给出的部分所示。
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Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091100
Changsheng Li, M. Bescond, M. Lannoo
We report a numerical study of the self-energy correction due to correlation effects from dynamic screening of the moving electron in silicon nanowire transistors. This many-body effect, which is not included in the usual Hartree approximation, is then incorporated self-consistently into a non-equilibrium Green's function (NEGF) code. The results pinpoint the importance of dielectric confinement whose magnitude can not be neglected compared to its quantum counterpart in ultimate nanowire transistors.
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Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091115
C. Buran, M. Pala, M. Mouis, S. Poli
We present numerical simulations of double-gate (DG)-MOSFETs based on a full-3D self-consistent Poisson-Schrodinger algorithm within the real-space non equilibrium Green's function (NEGF) approach. We include a geometrical description of surface roughness (SR) via an exponential auto-correlation law. In order to simulate rough planar structures we adopt periodic boundary conditions along one of the transverse directions. Transfer characteristics are computed for different realistic values of the root mean square (RMS) of spatial fluctuations whereas SR-limited mobility, which is extracted from effective mobility after subtraction of the ballistic component, presents a non monotonic dependence on the inversion charge density.
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Pub Date : 2009-05-01DOI: 10.1109/IWCE.2009.5091136
S. Li, Eric F Darve
The FIND algorithm is a fast algorithm designed to calculate entries of the inverse of a sparse matrix. Such calculation is critical in many applications, e.g., quantum transport in nano-devices. For a 2D device discretized as N times N mesh, the best known algorithms have a running time of O(N 4 ), whereas FIND only requires O(N 3 ), although with a larger constant factor. By exploiting the extra sparsity and symmetry, the size of the problem where FIND becomes faster than others may decrease from a 130 times 130 mesh down to a 40 times 40 mesh. This improvement will make the optimized FIND algorithm appealing to small problems as well, thus becoming competitive for most real applications.
{"title":"Optimization of the FIND Algorithm to Compute the Inverse of a Sparse Matrix","authors":"S. Li, Eric F Darve","doi":"10.1109/IWCE.2009.5091136","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091136","url":null,"abstract":"The FIND algorithm is a fast algorithm designed to calculate entries of the inverse of a sparse matrix. Such calculation is critical in many applications, e.g., quantum transport in nano-devices. For a 2D device discretized as N times N mesh, the best known algorithms have a running time of O(N 4 ), whereas FIND only requires O(N 3 ), although with a larger constant factor. By exploiting the extra sparsity and symmetry, the size of the problem where FIND becomes faster than others may decrease from a 130 times 130 mesh down to a 40 times 40 mesh. This improvement will make the optimized FIND algorithm appealing to small problems as well, thus becoming competitive for most real applications.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114466511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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