Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091128
O. Kurniawan, P. Bai, E. Li
The high speed of optical devices motivates the integration between electronics and photonics. One of the most common optoelectronic devices used for such integration is a photodetector. This paper describes the formulation of an optical absorption inside a photodetector using the non-equilibrium Green's function (NEGF) framework. To illustrate the use of the formulation, optical properties of a double barrier quantum well photodetector are simulated. The photocurrent and the spectral response of the photodetector are calculated and presented. We also study the effect of varying various bias voltage and introducing non-uniformity in the effective mass. It is found that the peak locations do not change significantly under these variations.
{"title":"Non-Equilibrium Green's Function Calculation of Optical Absorption in Nano Optoelectronic Devices","authors":"O. Kurniawan, P. Bai, E. Li","doi":"10.1109/IWCE.2009.5091128","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091128","url":null,"abstract":"The high speed of optical devices motivates the integration between electronics and photonics. One of the most common optoelectronic devices used for such integration is a photodetector. This paper describes the formulation of an optical absorption inside a photodetector using the non-equilibrium Green's function (NEGF) framework. To illustrate the use of the formulation, optical properties of a double barrier quantum well photodetector are simulated. The photocurrent and the spectral response of the photodetector are calculated and presented. We also study the effect of varying various bias voltage and introducing non-uniformity in the effective mass. It is found that the peak locations do not change significantly under these variations.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126475272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091106
Bo Fu, M. Fischetti
On the way to develop a complete full-band quantum transport simulation using the Pauli Master Equation, we show our present results on ID n-i-n resistors, ID double barrier resonant tunneling diodes (DBRTD), and 2D double-gate field effect transistors (DGFETs) using a simplified parabolic, spherical effective-mass band-structure model accounting for nonpolar scattering with acoustic (elastic) and optical (inelastic) silicon-like phonons. We also consider the effect of point-like dopants on the access resistance of thin-body double gate devices.
{"title":"Dissipative Quantum Transport using the Pauli Master Equation","authors":"Bo Fu, M. Fischetti","doi":"10.1109/IWCE.2009.5091106","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091106","url":null,"abstract":"On the way to develop a complete full-band quantum transport simulation using the Pauli Master Equation, we show our present results on ID n-i-n resistors, ID double barrier resonant tunneling diodes (DBRTD), and 2D double-gate field effect transistors (DGFETs) using a simplified parabolic, spherical effective-mass band-structure model accounting for nonpolar scattering with acoustic (elastic) and optical (inelastic) silicon-like phonons. We also consider the effect of point-like dopants on the access resistance of thin-body double gate devices.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116542041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091087
A. Ashok, D. Vasileska, S. Goodnick, O. Hartin
In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.
{"title":"Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs","authors":"A. Ashok, D. Vasileska, S. Goodnick, O. Hartin","doi":"10.1109/IWCE.2009.5091087","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091087","url":null,"abstract":"In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123070384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091105
M. Stettler, R. Kotlyar, T. Rakshit, T. Linton
Simulation approaches used in Intel to evaluate the applicability of new devices and materials for future microprocessor technologies are reviewed. Examples discussed include the evaluation of highly stressed materials, III -V HEMT devices, and carbon nanoribbons. The techniques employed are similar to those used in the research community, but focused on efficient evaluation within a versatile infrastructure that works for both development and research.
{"title":"Device Simulation for Future Technologies","authors":"M. Stettler, R. Kotlyar, T. Rakshit, T. Linton","doi":"10.1109/IWCE.2009.5091105","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091105","url":null,"abstract":"Simulation approaches used in Intel to evaluate the applicability of new devices and materials for future microprocessor technologies are reviewed. Examples discussed include the evaluation of highly stressed materials, III -V HEMT devices, and carbon nanoribbons. The techniques employed are similar to those used in the research community, but focused on efficient evaluation within a versatile infrastructure that works for both development and research.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123110100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091148
A. Valentin, S. Galdin-Retailleau, P. Dollfus
A physical model of sequential transport through a device containing two semiconductor nanocrystals has been developed. It is based on (i) the calculation of the nanocrystal phonon modes, (ii) the self consistent calculation of the nanocrystal electronic structure including collisional broadening, (iii) the calculation of tunnelling rates and (iv) the Monte Carlo computation of sequential tunnel transfers. The obtained I-V curve takes the form of a narrow peak whose width decreases with decreasing temperature. Lateral peaks due to phonon-assisted tunnelling appear to be strongly influenced by the temperature and by the surface phonon modes in the dots.
{"title":"Sequential Transport in a Two-Dot Device","authors":"A. Valentin, S. Galdin-Retailleau, P. Dollfus","doi":"10.1109/IWCE.2009.5091148","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091148","url":null,"abstract":"A physical model of sequential transport through a device containing two semiconductor nanocrystals has been developed. It is based on (i) the calculation of the nanocrystal phonon modes, (ii) the self consistent calculation of the nanocrystal electronic structure including collisional broadening, (iii) the calculation of tunnelling rates and (iv) the Monte Carlo computation of sequential tunnel transfers. The obtained I-V curve takes the form of a narrow peak whose width decreases with decreasing temperature. Lateral peaks due to phonon-assisted tunnelling appear to be strongly influenced by the temperature and by the surface phonon modes in the dots.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130017273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091118
Chih-I Huang, Yuh‐Renn Wu, I. Cheng, J. Z. Chen, Kuo‐Chuang Chiu, Tzer-Shen Lin
The study of transparent conducting oxide (TCO) has become an important area due to the applications of lighting and display technology. Therefore, high mobility and conductivity TCO materials would be a key issue to the industry. In this paper, we have applied the Monte Carlo method to analyze the mobility of single and poly-crystalline MgZnO/ZnO thin film layer. The effects of grain boundary scattering, ionized impurity scattering as well as phonon scattering have been included in our program. The grain boundary potential size and carrier screening effect has been analyzed with our developed 2D Poisson and drift-diffusion solver. With a careful design of modulation doping and including the effect of spontaneous and piezoelectric polarization, the grain boundary potential can be suppressed and thus the mobility of the ZnO layer can be improved.
{"title":"Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method","authors":"Chih-I Huang, Yuh‐Renn Wu, I. Cheng, J. Z. Chen, Kuo‐Chuang Chiu, Tzer-Shen Lin","doi":"10.1109/IWCE.2009.5091118","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091118","url":null,"abstract":"The study of transparent conducting oxide (TCO) has become an important area due to the applications of lighting and display technology. Therefore, high mobility and conductivity TCO materials would be a key issue to the industry. In this paper, we have applied the Monte Carlo method to analyze the mobility of single and poly-crystalline MgZnO/ZnO thin film layer. The effects of grain boundary scattering, ionized impurity scattering as well as phonon scattering have been included in our program. The grain boundary potential size and carrier screening effect has been analyzed with our developed 2D Poisson and drift-diffusion solver. With a careful design of modulation doping and including the effect of spontaneous and piezoelectric polarization, the grain boundary potential can be suppressed and thus the mobility of the ZnO layer can be improved.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128698256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091097
G. Liang, H. Teong, K. Lam
The structural effects of different graphene nanoribbon resonant tunneling diodes (GNR-RTDs) are investigated under different temperatures. Although the W-shape structure outperforms the H-shape structure in term of the peak current, the peak-to-valley ratio of the H-shape is higher than the W-shape due to the smaller peak currents of the former. Furthermore, the effects of the channel length and the contact's bandgap of the W-shape GNR RTDs on device performance are studied and their detailed device physics is also provided in this work.
{"title":"Computational Study of Graphene Nanoribbon Resonant Tunneling Diodes","authors":"G. Liang, H. Teong, K. Lam","doi":"10.1109/IWCE.2009.5091097","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091097","url":null,"abstract":"The structural effects of different graphene nanoribbon resonant tunneling diodes (GNR-RTDs) are investigated under different temperatures. Although the W-shape structure outperforms the H-shape structure in term of the peak current, the peak-to-valley ratio of the H-shape is higher than the W-shape due to the smaller peak currents of the former. Furthermore, the effects of the channel length and the contact's bandgap of the W-shape GNR RTDs on device performance are studied and their detailed device physics is also provided in this work.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130213611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091093
Nikolaos Rizos, Murad Omar, P. Lugli, G. Csaba, M. Becherer, D. Schmitt-Landsiedel
This paper introduces a clocking scheme that can be applied in magnetic field-coupled computing devices made from Co/Pt multilayers. The clocking wires are buried under the magnetic computing layer. Oscillating currents running through these wires generate an easy-axis field in the plane of the magnets. We show that this field can propagate signals between the magnetic dots and prevents frustration and splitting of the dots into multiple domains. We demonstrate our concept on a full micromagnetic simulation of an XOR gate. We argue that largescale logic devices could be built based on this architecture.
{"title":"Clocking Schemes for Field Coupled Devices from Magnetic Multilayers","authors":"Nikolaos Rizos, Murad Omar, P. Lugli, G. Csaba, M. Becherer, D. Schmitt-Landsiedel","doi":"10.1109/IWCE.2009.5091093","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091093","url":null,"abstract":"This paper introduces a clocking scheme that can be applied in magnetic field-coupled computing devices made from Co/Pt multilayers. The clocking wires are buried under the magnetic computing layer. Oscillating currents running through these wires generate an easy-axis field in the plane of the magnets. We show that this field can propagate signals between the magnetic dots and prevents frustration and splitting of the dots into multiple domains. We demonstrate our concept on a full micromagnetic simulation of an XOR gate. We argue that largescale logic devices could be built based on this architecture.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116237812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091099
A. Heigl, A. Schenk, G. Wachutka
We found out that the standard form of Schenk's model of band-to-band tunneling in silicon involves a poor approximation of the Airy-Integral and, therefore, overestimates the channel currents of realistic tunneling devices. In this paper we propose a better approximation resulting in a corrected form of the model, and we demonstrate its impact on the device characteristics of a tunneling transistor. Additionally, we investigated the influence of the corrected model on the local density correction and quantum confinement.
{"title":"Correction to the Schenk Model of Band-to-Band Tunneling in Silicon Applied to the Simulation of Nanowire Tunneling Transistors","authors":"A. Heigl, A. Schenk, G. Wachutka","doi":"10.1109/IWCE.2009.5091099","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091099","url":null,"abstract":"We found out that the standard form of Schenk's model of band-to-band tunneling in silicon involves a poor approximation of the Airy-Integral and, therefore, overestimates the channel currents of realistic tunneling devices. In this paper we propose a better approximation resulting in a corrected form of the model, and we demonstrate its impact on the device characteristics of a tunneling transistor. Additionally, we investigated the influence of the corrected model on the local density correction and quantum confinement.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125702267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091085
Seonghoon Jin, T. Tang, M. Fischetti
We study the physics of carrier backscattering in silicon nanowire transistors by using the numerical solution of the multisubband Boltzmann transport equation, where relevant scattering mechanisms by acoustic and intervalley phonons, surface roughness, and ionized impurities are included, accounting for intrasubband and intersubband, and elastic and inelastic transitions. The validity of several assumptions in the virtual source model is checked against the numerical solution. We have found that scattering processes make it difficult to model the macroscopic quantities at the virtual source without self-consistent simulations.
{"title":"Anatomy of Carrier Backscattering in Silicon Nanowire Transistors","authors":"Seonghoon Jin, T. Tang, M. Fischetti","doi":"10.1109/IWCE.2009.5091085","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091085","url":null,"abstract":"We study the physics of carrier backscattering in silicon nanowire transistors by using the numerical solution of the multisubband Boltzmann transport equation, where relevant scattering mechanisms by acoustic and intervalley phonons, surface roughness, and ionized impurities are included, accounting for intrasubband and intersubband, and elastic and inelastic transitions. The validity of several assumptions in the virtual source model is checked against the numerical solution. We have found that scattering processes make it difficult to model the macroscopic quantities at the virtual source without self-consistent simulations.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125114527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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