Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091143
F. J. Twaddle, D. Cumming, S. Roy, A. Asenov, T. Drysdale
Line edge roughness (LER) in end-of-the-roadmap integrated circuit interconnects causes variability in their resis- tance R, capacitance C and hence also their RC delay. We present an analysis of LER-induced variability of resistance, capacitance and delay of short-range interconnects within standard cells at the 32, 22 and 18 nm technology nodes using both a commercial RC extraction tool as well as a fast quasi-analytical (QA) method. Our QA method includes size dependent resistivity which, when coupled with LER, reveals increased resistance variability and total resistance in interconnects at these technology nodes. For example, the QA method predicts variability of 52% in resistance, 16% in capacitance and 36% in RC delay. When LER is the dominant source of variability there is a correlation of �0.8 between resistance and capacitance. Our results indicate interconnect variability is a significant and worsening problem, which should be included in statistical models of standard cells.
{"title":"RC Variability of Short-Range Interconnects","authors":"F. J. Twaddle, D. Cumming, S. Roy, A. Asenov, T. Drysdale","doi":"10.1109/IWCE.2009.5091143","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091143","url":null,"abstract":"Line edge roughness (LER) in end-of-the-roadmap integrated circuit interconnects causes variability in their resis- tance R, capacitance C and hence also their RC delay. We present an analysis of LER-induced variability of resistance, capacitance and delay of short-range interconnects within standard cells at the 32, 22 and 18 nm technology nodes using both a commercial RC extraction tool as well as a fast quasi-analytical (QA) method. Our QA method includes size dependent resistivity which, when coupled with LER, reveals increased resistance variability and total resistance in interconnects at these technology nodes. For example, the QA method predicts variability of 52% in resistance, 16% in capacitance and 36% in RC delay. When LER is the dominant source of variability there is a correlation of �0.8 between resistance and capacitance. Our results indicate interconnect variability is a significant and worsening problem, which should be included in statistical models of standard cells.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134125797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091088
M. Frey, A. Esposito, A. Schenk
In this paper, the influence of coherent and incoherent boundary conditions for quantum transport through silicon nanowires is studied. An iteration scheme to compute an approximate self-energy in the contacts is proposed. The focus lies on the impact on the self-consistent electrostatics and the current computation. In addition, the scaling behavior with increasing device lengths is shown.
{"title":"Boundary Conditions for Incoherent Quantum Transport","authors":"M. Frey, A. Esposito, A. Schenk","doi":"10.1109/IWCE.2009.5091088","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091088","url":null,"abstract":"In this paper, the influence of coherent and incoherent boundary conditions for quantum transport through silicon nanowires is studied. An iteration scheme to compute an approximate self-energy in the contacts is proposed. The focus lies on the impact on the self-consistent electrostatics and the current computation. In addition, the scaling behavior with increasing device lengths is shown.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133176131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091144
I. Solovyev
General ideas and strategies of realistic modeling of strongly correlated systems are reviewed. The purpose of this approach is to construct a microscopic (for example, the Hubbard-type) model for the limited group of bands located near the Fermi level and derive parameters of this model entirely from the first-principles electronic structure calculations. Thus, the method combines the accuracy of the first-principle calculations with the transparency and physical insights of the model analysis. The abilities of the method are illustrated on a number of examples, including the origin of the multiferroicity in BiMnO 3 , spin-orbital-lattice coupled phenomena in ABO 3 (where A= three-valent rare-earths element and B= Ti or V), and magnetism of KO 2 . The latter compound can be regarded a rare example of strongly correlated system build from the magnetic oxygen molecules.
{"title":"Realistic Modeling of Complex Oxide Materials from the First Principles","authors":"I. Solovyev","doi":"10.1109/IWCE.2009.5091144","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091144","url":null,"abstract":"General ideas and strategies of realistic modeling of strongly correlated systems are reviewed. The purpose of this approach is to construct a microscopic (for example, the Hubbard-type) model for the limited group of bands located near the Fermi level and derive parameters of this model entirely from the first-principles electronic structure calculations. Thus, the method combines the accuracy of the first-principle calculations with the transparency and physical insights of the model analysis. The abilities of the method are illustrated on a number of examples, including the origin of the multiferroicity in BiMnO 3 , spin-orbital-lattice coupled phenomena in ABO 3 (where A= three-valent rare-earths element and B= Ti or V), and magnetism of KO 2 . The latter compound can be regarded a rare example of strongly correlated system build from the magnetic oxygen molecules.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116175503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091114
Qiushi Ran, M. Gao, Yan Wang, Zhiping Yu
Metal-graphene contacts play a critical role in graphene-based electronics. The potential steps of graphene contact with eight different kinds of metals and many other electronic properties were obtained using first-principles DFT calculation. Core potential of some C atoms are used as reference to get the change of Fermi level between isolated and contacted graphene no matter whether the Dirac point could be seen in the bandstructure or not. Our results show that there are two kinds of contacts except Pd. The strong chemical contact is preferred when comes to transport.
{"title":"First-Principles Study of the Potential Step in Metal/Graphene Contact","authors":"Qiushi Ran, M. Gao, Yan Wang, Zhiping Yu","doi":"10.1109/IWCE.2009.5091114","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091114","url":null,"abstract":"Metal-graphene contacts play a critical role in graphene-based electronics. The potential steps of graphene contact with eight different kinds of metals and many other electronic properties were obtained using first-principles DFT calculation. Core potential of some C atoms are used as reference to get the change of Fermi level between isolated and contacted graphene no matter whether the Dirac point could be seen in the bandstructure or not. Our results show that there are two kinds of contacts except Pd. The strong chemical contact is preferred when comes to transport.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126007553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091123
V. Mitin, A. Sergeev, Li-Hsin Chien, N. Vagidov
Using Monte-Carlo method, we simulate kinetics and transport of electrons in different types of InAs/GaAs quantum-dot infrared photodetectors. Our simulation program exploits Gamma-L-X model of the conduction band of semiconductor and it includes three major types of electron scattering on: 1) acoustic phonons, 2) polar optical phonons, and 3) intervalley phonons. The results of simulation demonstrate that the combination of local potential barriers around quantum dots and quantum-dot structure with collective barriers can be used to achieve long carrier lifetimes, and therefore high photoconductive gain, responsivity, and detectivity.
{"title":"Monte-Carlo Modeling of Photoelectron Kinetics in Quantum-Dot Photodetectors","authors":"V. Mitin, A. Sergeev, Li-Hsin Chien, N. Vagidov","doi":"10.1109/IWCE.2009.5091123","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091123","url":null,"abstract":"Using Monte-Carlo method, we simulate kinetics and transport of electrons in different types of InAs/GaAs quantum-dot infrared photodetectors. Our simulation program exploits Gamma-L-X model of the conduction band of semiconductor and it includes three major types of electron scattering on: 1) acoustic phonons, 2) polar optical phonons, and 3) intervalley phonons. The results of simulation demonstrate that the combination of local potential barriers around quantum dots and quantum-dot structure with collective barriers can be used to achieve long carrier lifetimes, and therefore high photoconductive gain, responsivity, and detectivity.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129051919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091092
P. Schwaha, O. Baumgartner, R. Heinzl, M. Nedjalkov, S. Selberherr, I. Dimov
Quantum simulations basically rely on two kinetic theories which account for the coherent transport at different levels of approximation. These theories have complementary properties with respect to the ability to account for de-coherence processes, and become computationally expensive in describing mixed mode transport, where both, coherent and de-coherent processes must be taken into account. We consider an ap- proach, where the coherent information, as provided by the non- equilibrium Green's function, is used in a kind of Wigner equa- tion for the scattering induced correction to the coherent Wigner function. Here, we address the opportunity to approximate the equation by taking the classical limit in the Wigner potential term. I. INTRODUCTION The nanometer and femtosecond scales of operation of modern devices give rise to a number of phenomena which are beyond purely classical description. These phenomena are classified in the International Technology Road-map for Semi- conductors (ITRS, www.itrs.net) according to their importance to the performance of next generation devices. It is recognized that '... computationally efficient quantum based simulators' are of utmost interest. Quantum models capable of describing mixed mode transport, where purely coherent phenomena such as quantization and tunneling are considered along with phase breaking processes such as interactions with phonons, are especially relevant. The rising computational requirements resulting from the increasing complexity due to the mixed mode phenomena are a major concern for the development and deployment of these models. The harmony between theoretical and numerical aspects of the classical Boltzmann model is no longer among the characteristics of the quantum mechanical counterpart. The two kinetic theories which are the foundations of quantum simulations will be sketched in the following. We first consider coherent processes. The non-equilibrium Green's function (NEGF) approach offers the most comprehensive, self-consistent way to account for correlations in space and time. However, because of numerical issues the applicability is restricted to stationary structures, basically in the ballistic limit (1). The computational burden can be reduced by work- ing in a mode space, obtained by separation of the problem into longitudinal and transverse directions. Furthermore, if the transverse potential profile along the transport direction remains uniform, the modes in these directions can be de- coupled so that the transport becomes quasi-multidimensional.
{"title":"Classical Approximation of the Scattering Induced Wigner Correction Equation","authors":"P. Schwaha, O. Baumgartner, R. Heinzl, M. Nedjalkov, S. Selberherr, I. Dimov","doi":"10.1109/IWCE.2009.5091092","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091092","url":null,"abstract":"Quantum simulations basically rely on two kinetic theories which account for the coherent transport at different levels of approximation. These theories have complementary properties with respect to the ability to account for de-coherence processes, and become computationally expensive in describing mixed mode transport, where both, coherent and de-coherent processes must be taken into account. We consider an ap- proach, where the coherent information, as provided by the non- equilibrium Green's function, is used in a kind of Wigner equa- tion for the scattering induced correction to the coherent Wigner function. Here, we address the opportunity to approximate the equation by taking the classical limit in the Wigner potential term. I. INTRODUCTION The nanometer and femtosecond scales of operation of modern devices give rise to a number of phenomena which are beyond purely classical description. These phenomena are classified in the International Technology Road-map for Semi- conductors (ITRS, www.itrs.net) according to their importance to the performance of next generation devices. It is recognized that '... computationally efficient quantum based simulators' are of utmost interest. Quantum models capable of describing mixed mode transport, where purely coherent phenomena such as quantization and tunneling are considered along with phase breaking processes such as interactions with phonons, are especially relevant. The rising computational requirements resulting from the increasing complexity due to the mixed mode phenomena are a major concern for the development and deployment of these models. The harmony between theoretical and numerical aspects of the classical Boltzmann model is no longer among the characteristics of the quantum mechanical counterpart. The two kinetic theories which are the foundations of quantum simulations will be sketched in the following. We first consider coherent processes. The non-equilibrium Green's function (NEGF) approach offers the most comprehensive, self-consistent way to account for correlations in space and time. However, because of numerical issues the applicability is restricted to stationary structures, basically in the ballistic limit (1). The computational burden can be reduced by work- ing in a mode space, obtained by separation of the problem into longitudinal and transverse directions. Furthermore, if the transverse potential profile along the transport direction remains uniform, the modes in these directions can be de- coupled so that the transport becomes quasi-multidimensional.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124562488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091141
N. Neophytou, H. Kosina, T. Rakshit
This paper presents a simulation work of In0.7Ga0.3As HEMT devices for logic applications using a quantum ballistic 2D simulator based on the non-equilibrium Green's function (NEGF) approach coupled to a 2D Poisson for the electrostatics. In a previous study, we showed that In0.7Ga0.3As short channel HEMT devices operates close to the ballistic limit and can be modeled as a ballistic channel attached to two series resistances. Since the electronic structure of the quantized channel is not known precisely, or can be altered by strain fields, in this work, we quantify our results, by investigating the variation in device performance due to variations in the effective mass values. We conclude that for these devices, variations in the electronic structure do not impact the device performance significantly. The results also provide insight into the expected effect of strain on the performance due to mass variations.
{"title":"Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance","authors":"N. Neophytou, H. Kosina, T. Rakshit","doi":"10.1109/IWCE.2009.5091141","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091141","url":null,"abstract":"This paper presents a simulation work of In0.7Ga0.3As HEMT devices for logic applications using a quantum ballistic 2D simulator based on the non-equilibrium Green's function (NEGF) approach coupled to a 2D Poisson for the electrostatics. In a previous study, we showed that In0.7Ga0.3As short channel HEMT devices operates close to the ballistic limit and can be modeled as a ballistic channel attached to two series resistances. Since the electronic structure of the quantized channel is not known precisely, or can be altered by strain fields, in this work, we quantify our results, by investigating the variation in device performance due to variations in the effective mass values. We conclude that for these devices, variations in the electronic structure do not impact the device performance significantly. The results also provide insight into the expected effect of strain on the performance due to mass variations.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134444341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091129
G. Milovanović, H. Kosina
We calculate electron-LO phonon and interface roughness scattering rates in a GaAs/Al x Ga 1-x As quantum cascade laser taking into account conduction subband nonparabolicity. In this work we investigate the Al concentration and the k
考虑导子带非抛物性，计算了GaAs/Al x ga1 -x As量子级联激光器中电子- lo声子和界面粗糙度散射率。在这项工作中，我们研究了Al浓度和k
{"title":"Nonparabolicity Effects in Quantum Cascade Lasers","authors":"G. Milovanović, H. Kosina","doi":"10.1109/IWCE.2009.5091129","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091129","url":null,"abstract":"We calculate electron-LO phonon and interface roughness scattering rates in a GaAs/Al x Ga 1-x As quantum cascade laser taking into account conduction subband nonparabolicity. In this work we investigate the Al concentration and the k","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115369328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091109
T. Osotchan, S. Pengmanayol
Charge carrier mobility in disorder materials was described by hopping model and the increasing in the mobility value of existing defect or impurity sites was investigated by Monte Carlo simulation of the rectangular hopping site. In the case of equal tunneling rate, the mobility value increases when the defect sites have higher energy and becomes saturate at the site energy about 1.04 times of the host energy. It found that the maximum mobility occurs when there are defect sites about 40 percents. When the tunneling rate to the defect site is reduced the maximum mobility occurs at higher percent of defect sites. In addition the other type of mobility enhancement appears when the defect site has energy lower than 0.92 times of the host site energy and this occurs only at small amount of the defect sites (less than 10 percents). This type of the enhancement exhibits much higher value of the carrier mobility and the result indicates the mobility value up to about three times of the host value.
{"title":"Effect of Defect Sites in Charge Carrier Mobility Enhancement of Hopping Model","authors":"T. Osotchan, S. Pengmanayol","doi":"10.1109/IWCE.2009.5091109","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091109","url":null,"abstract":"Charge carrier mobility in disorder materials was described by hopping model and the increasing in the mobility value of existing defect or impurity sites was investigated by Monte Carlo simulation of the rectangular hopping site. In the case of equal tunneling rate, the mobility value increases when the defect sites have higher energy and becomes saturate at the site energy about 1.04 times of the host energy. It found that the maximum mobility occurs when there are defect sites about 40 percents. When the tunneling rate to the defect site is reduced the maximum mobility occurs at higher percent of defect sites. In addition the other type of mobility enhancement appears when the defect site has energy lower than 0.92 times of the host site energy and this occurs only at small amount of the defect sites (less than 10 percents). This type of the enhancement exhibits much higher value of the carrier mobility and the result indicates the mobility value up to about three times of the host value.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124772301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-05-27DOI: 10.1109/IWCE.2009.5091079
Yingda Cheng, I. Gamba, A. Majorana, Chi-Wang Shu
We present new preliminary results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. Very recently in, results for one and two dimensional devices were obtained in the case of silicon semiconductor assuming the non-parabolic band approximation. Here, more general band structures are considered. Preliminary benchmark numerical tests on Kane and Brunetti et al. band models are reported.
{"title":"A Discontinuous Galerkin Solver for Full-Band Boltzmann-Poisson Models","authors":"Yingda Cheng, I. Gamba, A. Majorana, Chi-Wang Shu","doi":"10.1109/IWCE.2009.5091079","DOIUrl":"https://doi.org/10.1109/IWCE.2009.5091079","url":null,"abstract":"We present new preliminary results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. Very recently in, results for one and two dimensional devices were obtained in the case of silicon semiconductor assuming the non-parabolic band approximation. Here, more general band structures are considered. Preliminary benchmark numerical tests on Kane and Brunetti et al. band models are reported.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123041476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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