The results of experimental investigations of the glow kinetics of narrow-spectrum LEDs based on InGaN-GaN 450 and 520 nm and AlGaInP-GaAs 625 nm structures are presented. The increase and decrease of the light flux intensity under pulsed power are described by exponential dependences containing fast and slow components. The time constants of both components decrease with the increase of the pulse frequency for all three types of LED samples. The time constant of the slow component decreases with the increase of the current and voltage pulse amplitudes. The maximum light output on the frequency dependences of LED energy characteristics is observed at the frequency of 75…100 kHz. Further frequency increase results in the decrease of the LED energy efficiency. The obtained results are explained based on the LED equivalent electrical and energy circuits.
{"title":"Kinetics of narrow-spectrum LED glow under pulsed power","authors":"V.A. Andriichuk, M.S. Nakonechnyi, Ya.O. Filiuk","doi":"10.15407/spqeo26.02.230","DOIUrl":"https://doi.org/10.15407/spqeo26.02.230","url":null,"abstract":"The results of experimental investigations of the glow kinetics of narrow-spectrum LEDs based on InGaN-GaN 450 and 520 nm and AlGaInP-GaAs 625 nm structures are presented. The increase and decrease of the light flux intensity under pulsed power are described by exponential dependences containing fast and slow components. The time constants of both components decrease with the increase of the pulse frequency for all three types of LED samples. The time constant of the slow component decreases with the increase of the current and voltage pulse amplitudes. The maximum light output on the frequency dependences of LED energy characteristics is observed at the frequency of 75…100 kHz. Further frequency increase results in the decrease of the LED energy efficiency. The obtained results are explained based on the LED equivalent electrical and energy circuits.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134933585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Considered in this paper are the parameters and characteristics of the developed highly efficient electronic control systems for powerful LED modules (drivers), built on the basis of a single-stage flyback converter with a nominal power close to 200 W. The results of experimental tests show that, at the nominal load, the minimum efficiency of the developed driver reaches 88.2% with the power factor above 0.97 and the coefficient of total harmonic current distortion close to 23.4%. With the maximum value of the efficiency factor of the developed system 90.3% and the supply voltage 240 V, the power factor is higher than 0.99, and the total harmonic current distortion is 3.6%. The values of current harmonics of the driver do not exceed the maximum allowable values defined by the current standards. Used driver construction topology enabled to reduce the cost of the final product due to the unification of the component base, which increases the availability and manufacturability of the design. The use of a modern element base made it possible to ensure the deviation of the output current from the set one by no more than 1% over the whole range of the operating voltage of the supply (180…250 V), which allows using the developed driver in intelligent lighting systems and lighting systems with a combined power supply.
{"title":"Design of a LED driver with a flyback topology for intelligent lighting systems with high power and efficiency","authors":"V.I. Kornaga, D.V. Pekur, Yu.V. Kolomzarov, V.M. Sorokin, Yu.E. Nikolaenko","doi":"10.15407/spqeo26.02.222","DOIUrl":"https://doi.org/10.15407/spqeo26.02.222","url":null,"abstract":"Considered in this paper are the parameters and characteristics of the developed highly efficient electronic control systems for powerful LED modules (drivers), built on the basis of a single-stage flyback converter with a nominal power close to 200 W. The results of experimental tests show that, at the nominal load, the minimum efficiency of the developed driver reaches 88.2% with the power factor above 0.97 and the coefficient of total harmonic current distortion close to 23.4%. With the maximum value of the efficiency factor of the developed system 90.3% and the supply voltage 240 V, the power factor is higher than 0.99, and the total harmonic current distortion is 3.6%. The values of current harmonics of the driver do not exceed the maximum allowable values defined by the current standards. Used driver construction topology enabled to reduce the cost of the final product due to the unification of the component base, which increases the availability and manufacturability of the design. The use of a modern element base made it possible to ensure the deviation of the output current from the set one by no more than 1% over the whole range of the operating voltage of the supply (180…250 V), which allows using the developed driver in intelligent lighting systems and lighting systems with a combined power supply.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134933584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In-well and cross-well carrier transport in quantum wells","authors":"A. Miller","doi":"10.1201/9781003072829-1","DOIUrl":"https://doi.org/10.1201/9781003072829-1","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82840843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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