C. Gmachl, J. Faist, F. Capasso, C. Sirtori, D. Sivco, A. Cho
Low threshold, single-mode quantum cascade whispering gallery lasers with emission wavelengths from 5.0 to 11.5 micrometer are reported. Their potential for true microcavities is discussed.
{"title":"Quantum Cascade Whispering Gallery Lasers","authors":"C. Gmachl, J. Faist, F. Capasso, C. Sirtori, D. Sivco, A. Cho","doi":"10.1364/qo.1997.qfa.1","DOIUrl":"https://doi.org/10.1364/qo.1997.qfa.1","url":null,"abstract":"Low threshold, single-mode quantum cascade whispering gallery lasers with emission wavelengths from 5.0 to 11.5 micrometer are reported. Their potential for true microcavities is discussed.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"3 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83085726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Filipowitz, U. Marti, M. Glick, F. Reinhart, J. Wang, P. von Allmen, J. Leburton
Theoretical predictions1 have shown that confined structures, quantum wires (QWR) or quantum dots (QD), should have higher gain and absorption, compared to quantum wells, owing to the discontinuity in the joint density of states. We use a non standard description of the valence band states2 to evaluate the absorption of V-shaped quantum wires close to the band edge. We choose the projection axis of the angular momentum of the valence band states along the non-confined direction of the wire. This description has two advantages: (i) the masses are isotropic along the two confined directions and (ii) the light hole (lh) and heavy hole (hh) states are decoupled at kz=0, if the kinetic energy of the confined holes is the same along both confined directions and the energy separation between the {lh,hh}i and {lh,hh}i+1 subbands is high. This description is particularly advantageous close to the band edge where transitions are mostly excitonic. Photoluminescence (PL) and photoluminescence excitation (PLE) measurements made on V-shaped quantum wires are reinterpreted: the lowest energy transition is a e1-lh1 excitonic transition and the second lowest is a e1-hh1 excitonic transition. This new interpretation is the first to explain the lower intensity of the lowest energy peak observed in PL and PLE measurements. To assess the impact of the non-uniformity of the wires, we evaluate the absorption of V-shaped QWR (V-QWR) grown by MBE deposition over a non-planar substrate3.
{"title":"New interpretation of quantum wire luminescence using a non standard description of the valence band states","authors":"F. Filipowitz, U. Marti, M. Glick, F. Reinhart, J. Wang, P. von Allmen, J. Leburton","doi":"10.1364/qo.1997.qthe.4","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.4","url":null,"abstract":"Theoretical predictions1 have shown that confined structures, quantum wires (QWR) or quantum dots (QD), should have higher gain and absorption, compared to quantum wells, owing to the discontinuity in the joint density of states. We use a non standard description of the valence band states2 to evaluate the absorption of V-shaped quantum wires close to the band edge. We choose the projection axis of the angular momentum of the valence band states along the non-confined direction of the wire. This description has two advantages: (i) the masses are isotropic along the two confined directions and (ii) the light hole (lh) and heavy hole (hh) states are decoupled at kz=0, if the kinetic energy of the confined holes is the same along both confined directions and the energy separation between the {lh,hh}i and {lh,hh}i+1 subbands is high. This description is particularly advantageous close to the band edge where transitions are mostly excitonic. Photoluminescence (PL) and photoluminescence excitation (PLE) measurements made on V-shaped quantum wires are reinterpreted: the lowest energy transition is a e1-lh1 excitonic transition and the second lowest is a e1-hh1 excitonic transition. This new interpretation is the first to explain the lower intensity of the lowest energy peak observed in PL and PLE measurements. To assess the impact of the non-uniformity of the wires, we evaluate the absorption of V-shaped QWR (V-QWR) grown by MBE deposition over a non-planar substrate3.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85298785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
There has been increasing fundamental and practical interest in the properties of dielectric microspheres in recent years. High-Q structural resonances that occur when the round trip optical path is an integral number of wavelengths can be exploited for quantum measurement and the observation of cavity QED effects. The spherical microparticle is also an important component of the earth’s atmosphere, contributing both to visual displays and global change. In this paper, we describe theoretical and experimental applications of optical pulse techniques to the characterization of dielectric spheres.
{"title":"Time-Domain Measurements of Light Propagation in Dielectric Spheres","authors":"W. Whitten, R. Shaw, M. Barnes, J. Ramsey","doi":"10.1364/qo.1997.qthe.8","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.8","url":null,"abstract":"There has been increasing fundamental and practical interest in the properties of dielectric microspheres in recent years. High-Q structural resonances that occur when the round trip optical path is an integral number of wavelengths can be exploited for quantum measurement and the observation of cavity QED effects. The spherical microparticle is also an important component of the earth’s atmosphere, contributing both to visual displays and global change. In this paper, we describe theoretical and experimental applications of optical pulse techniques to the characterization of dielectric spheres.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"14 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81956338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In ultrafast nonlinear spectroscopy interferometric techniques can be applied both for heterodyne detection of the signal and for the excitation of the sample by phase-locked pulses, thus delivering coherent control [1] over the system. Such techniques have been predicted to be extremely sensitive with respect to the dynamics of elementary excitation [2] and have been applied to the study of non-Markovian dynamics of molecules [3, 4]. For the case of semiconductors, interferometric sensitivity has been employed for detection purposes [5] and the use of phase-locked pulses has been reported quite recently [6]. In this paper we report the observation of a novel interference phenomenon in interferometric four-wave-mixing due to contributions beyond the third order perturbational limit. An analysis of the observed interferences allows for an estimation of the importance of these higher order contributions.
{"title":"Interferometrie Four-Wave-Mixing Spectroscopy on Semiconductors","authors":"M. Wehner, J. Hetzler, M. Wegener","doi":"10.1364/qo.1997.qwb.2","DOIUrl":"https://doi.org/10.1364/qo.1997.qwb.2","url":null,"abstract":"In ultrafast nonlinear spectroscopy interferometric techniques can be applied both for heterodyne detection of the signal and for the excitation of the sample by phase-locked pulses, thus delivering coherent control [1] over the system. Such techniques have been predicted to be extremely sensitive with respect to the dynamics of elementary excitation [2] and have been applied to the study of non-Markovian dynamics of molecules [3, 4]. For the case of semiconductors, interferometric sensitivity has been employed for detection purposes [5] and the use of phase-locked pulses has been reported quite recently [6]. In this paper we report the observation of a novel interference phenomenon in interferometric four-wave-mixing due to contributions beyond the third order perturbational limit. An analysis of the observed interferences allows for an estimation of the importance of these higher order contributions.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"41 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84984209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Recently, low-dimensional quantum structures such as quantum dots (QDs) and quantum wires (QWIs), has been attracting much interest due to their novel physical properties and consequent improvements in device performances.1) When the ideal QD or QWI structures are achieved, higher gain and lower threshold current in laser diodes are expected.2) Among the many fabrication methods reported for such structures, self-assembled quantum-dot (SAQD) growth techniques3-5) are particularly notable. They positively utilize the islanding growth in highly strained heteroepitaxial systems, such as InGaAs on GaAs. The SAQDs can be simply fabricated by molecular beam epitaxy (MBE)3) or metal-organic vapor phase epitaxy (MOVPE)4),5) and they have high crystal quality and uniform size distributions of within 10% as well as high surface densities of more than about 1011cm-2. Using these SAQDs, low-threshold QD edge-emitting lasers have been fabricated.6-8) We expect to make even more advanced lasers, such as QD vertical-cavity surface-emitting lasers (VCSELs) using QDs in the active region.9) The QD-VCSEL is especially attractive for controlling both the electron and photon modes in a microcavity structure.10) When the cavity mode coincides with the narrow bandwidth light emission that originates from the delta-function-like density of states in uniform QDs, a high-performance light source with very low threshold current can be realized. On the other hand, the gain width, which critically determines the temperature characteristics of the VCSEL,11) can be designated in QD-VCSELs by controlling the dot size distribution. Therefore, for improving and modifying device performances, we believe that the QD-VCSEL is the optimum optical device utilizing the QD structure. In this article, we report the fabrication of a QD-VCSEL and the observation of lasing oscillation at room temperature.
{"title":"Vertical cavity surface emitting laser with self-assembled quantum dots","authors":"K. Nishi, H. Saito, S. Sugou","doi":"10.1364/qo.1997.qwa.2","DOIUrl":"https://doi.org/10.1364/qo.1997.qwa.2","url":null,"abstract":"Recently, low-dimensional quantum structures such as quantum dots (QDs) and quantum wires (QWIs), has been attracting much interest due to their novel physical properties and consequent improvements in device performances.1) When the ideal QD or QWI structures are achieved, higher gain and lower threshold current in laser diodes are expected.2) Among the many fabrication methods reported for such structures, self-assembled quantum-dot (SAQD) growth techniques3-5) are particularly notable. They positively utilize the islanding growth in highly strained heteroepitaxial systems, such as InGaAs on GaAs. The SAQDs can be simply fabricated by molecular beam epitaxy (MBE)3) or metal-organic vapor phase epitaxy (MOVPE)4),5) and they have high crystal quality and uniform size distributions of within 10% as well as high surface densities of more than about 1011cm-2. Using these SAQDs, low-threshold QD edge-emitting lasers have been fabricated.6-8) We expect to make even more advanced lasers, such as QD vertical-cavity surface-emitting lasers (VCSELs) using QDs in the active region.9) The QD-VCSEL is especially attractive for controlling both the electron and photon modes in a microcavity structure.10) When the cavity mode coincides with the narrow bandwidth light emission that originates from the delta-function-like density of states in uniform QDs, a high-performance light source with very low threshold current can be realized. On the other hand, the gain width, which critically determines the temperature characteristics of the VCSEL,11) can be designated in QD-VCSELs by controlling the dot size distribution. Therefore, for improving and modifying device performances, we believe that the QD-VCSEL is the optimum optical device utilizing the QD structure. In this article, we report the fabrication of a QD-VCSEL and the observation of lasing oscillation at room temperature.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"117 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88470218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. A. Smith, S. Risbud, J. Cooke, Howard W. H. Lee
Our study of ZnSe quantum dots is motivated by the inherent interest in quantum confined systems and by the potential for shorter wavelength laser operation enabled by blue-shifted quantum confined energy levels. The optical and electronic properties of these nanocrystals as a function of the fabrication process were investigated with various optical techniques including photoluminescence (PL) lifetimes, and absorption, PL , and excitation spectroscopy.
{"title":"Laser Annealing of Trap States in ZnSe Quantum Dots","authors":"C. A. Smith, S. Risbud, J. Cooke, Howard W. H. Lee","doi":"10.1364/qo.1997.qthe.10","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.10","url":null,"abstract":"Our study of ZnSe quantum dots is motivated by the inherent interest in quantum confined systems and by the potential for shorter wavelength laser operation enabled by blue-shifted quantum confined energy levels. The optical and electronic properties of these nanocrystals as a function of the fabrication process were investigated with various optical techniques including photoluminescence (PL) lifetimes, and absorption, PL , and excitation spectroscopy.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88591061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Vurgaftman, J. R. Meyer, Chris Felix, L. Ram-Mohan
There is a critical need for high-power mid-infrared diode lasers to be used in such military and commercial applications as IR countermeasures, IR illumination, and long-range chemical sensing. To date, the highest reported cw output power from a semiconductor diode emitting in the 3-5 μm spectral region has been 215 mW/facet. This was obtained from a 250-μm stripe at 80 K,1 and cw operation has never been observed in a III-V diode laser above 175 K.2 Although output powers exceeding 1 W are readily attainable from near-IR (λ ≈ 1 μm) lasers operating at or near ambient temperature, mid-IR emitters are inherently at a disadvantage due to the inverse scaling of the differential slope efficiency (dP/dI) with wavelength. That is, while the same current is required to inject one electron-hole pair as in a near-IR diode laser, the energy of the photon that results is 3-5 times smaller. A recent breakthrough has been the demonstration that this fundamental limitation may be circumvented by employing a cascade geometry. The unipolar quantum cascade laser (QCL) of Faist et al.,3 which achieves lasing due to optical intersubband transitions, can in principle emit as many photons for each injected electron as there are periods in the structure. However, high cw operating temperatures and large cw output powers have not yet been reported, in part because the threshold current density is inevitably rather large owing to a rapid nonradiative phonon relaxation of the population inversion.
{"title":"Simulation of High-Power Mid-IR Interband Cascade Laser","authors":"I. Vurgaftman, J. R. Meyer, Chris Felix, L. Ram-Mohan","doi":"10.1364/qo.1997.qfa.2","DOIUrl":"https://doi.org/10.1364/qo.1997.qfa.2","url":null,"abstract":"There is a critical need for high-power mid-infrared diode lasers to be used in such military and commercial applications as IR countermeasures, IR illumination, and long-range chemical sensing. To date, the highest reported cw output power from a semiconductor diode emitting in the 3-5 μm spectral region has been 215 mW/facet. This was obtained from a 250-μm stripe at 80 K,1 and cw operation has never been observed in a III-V diode laser above 175 K.2 Although output powers exceeding 1 W are readily attainable from near-IR (λ ≈ 1 μm) lasers operating at or near ambient temperature, mid-IR emitters are inherently at a disadvantage due to the inverse scaling of the differential slope efficiency (dP/dI) with wavelength. That is, while the same current is required to inject one electron-hole pair as in a near-IR diode laser, the energy of the photon that results is 3-5 times smaller. A recent breakthrough has been the demonstration that this fundamental limitation may be circumvented by employing a cascade geometry. The unipolar quantum cascade laser (QCL) of Faist et al.,3 which achieves lasing due to optical intersubband transitions, can in principle emit as many photons for each injected electron as there are periods in the structure. However, high cw operating temperatures and large cw output powers have not yet been reported, in part because the threshold current density is inevitably rather large owing to a rapid nonradiative phonon relaxation of the population inversion.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"2 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80432654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have recently demonstrated [1] that transient electron spin gratings created by cross-polarised excitation pulses at a wavelength resonant with the heavy hole exciton, can provide a new and unique way of measuring in-well electron drift mobilities in semiconductor multiple quantum well structures. This compares with the usual transient grating method in which only the ambipolar diffusion coefficient can be determined [2]. A comparison of concentration and spin grating decay rates allows the direct measurement of both the electron and hole drift mobilities in the same sample. In this work we extend these measurements to GaAs/AlGaAs multiple quantum wells with different well widths and compare results obtained under conditions of exciton saturation and broadening.
{"title":"Spin-Gratings and In-Well Carrier Transport Measurements in GaAs/AlGaAs Multiple Quantum Wells","authors":"P. Riblet, AR Cameron, A. Miller","doi":"10.1364/qo.1997.qthe.3","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.3","url":null,"abstract":"We have recently demonstrated [1] that transient electron spin gratings created by cross-polarised excitation pulses at a wavelength resonant with the heavy hole exciton, can provide a new and unique way of measuring in-well electron drift mobilities in semiconductor multiple quantum well structures. This compares with the usual transient grating method in which only the ambipolar diffusion coefficient can be determined [2]. A comparison of concentration and spin grating decay rates allows the direct measurement of both the electron and hole drift mobilities in the same sample. In this work we extend these measurements to GaAs/AlGaAs multiple quantum wells with different well widths and compare results obtained under conditions of exciton saturation and broadening.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"111 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77451553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Fukuzawa, S. Y. Kim, T. Gustafson, E. Haller, E. Yamada
Two-dimensional (2D) bosons can undergo a Kosterlitz-Thouless transition[1], which does not involve macroscopic occupation of a single quantum state, but which can still result in superfluidity. In addition, strongly interacting bosons subject to a random potential can also exhibit superfluidity, as in the case of charged superfluidity that occurs in high-T c superconductors. Competition between the strength of the interaction and the degree of potential disorder are among the many complicated and competing factors which determine whether superfluidity is promoted or supressed in a Bose system[2]. Strong potential disorder forces bosons to localize and can result in an insulating Bose glass phase. Alternatively, repulsive interactions among bosons act to release them from their traps, to keep their inter-particle distances as uniform as the potential allows, and to arrange the flow direction. An appropriate interaction strength can thus promote superfluidity.
{"title":"Anomalous Diffusion of Repulsive Bosons in a Two-Dimensional Random Potential","authors":"T. Fukuzawa, S. Y. Kim, T. Gustafson, E. Haller, E. Yamada","doi":"10.1364/qo.1997.qthb.2","DOIUrl":"https://doi.org/10.1364/qo.1997.qthb.2","url":null,"abstract":"Two-dimensional (2D) bosons can undergo a Kosterlitz-Thouless transition[1], which does not involve macroscopic occupation of a single quantum state, but which can still result in superfluidity. In addition, strongly interacting bosons subject to a random potential can also exhibit superfluidity, as in the case of charged superfluidity that occurs in high-T c superconductors. Competition between the strength of the interaction and the degree of potential disorder are among the many complicated and competing factors which determine whether superfluidity is promoted or supressed in a Bose system[2]. Strong potential disorder forces bosons to localize and can result in an insulating Bose glass phase. Alternatively, repulsive interactions among bosons act to release them from their traps, to keep their inter-particle distances as uniform as the potential allows, and to arrange the flow direction. An appropriate interaction strength can thus promote superfluidity.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"101 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78378086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Tyan, P. Sun, A. Salvekar, H. Chou, Chuan-cheng Cheng, F. Xu, A. Scherer, Y. Fainman
Subwavelength multilayer binary gratings (SMBG) can be seen as a 2-D periodic structures (see Fig.1a) with two periodic directions along the grating vector and the multilayer cascading direction. Such structures combine strong form- birefringence1,2 of the subwavelength grating with high reflectivity due the multilayer structure allowing us to design polarization sensitive microdevices, such as polarization selective mirror and polarizing beam splitter. Recently3 we introduce a new polarizing beam splitter (PBS) microdevice design built of SMBGs. Not only this novel design increases the angular and spectral range of the PBS microdevice in comparison to conventional PBS designs, but most importantly, our microdevice can operate with normally incident light, acting as a high-efficiency polarization-selective mirror. Microdevice with such features are critical for microlaser designs. Since the SMBG is a 2-D periodic structure, it can also be used to design a 2-D photonic crystal. In this manuscript, we summarize the design, modeling, and characterization of the SMBG structure designed to implement polarization sensitive microdevice, and also introduce and discuss a 2-D photonic crystal design based on SMBG.
{"title":"Subwavelength Multilayer Binary Grating Design for Implementing Photonic Crystals","authors":"R. Tyan, P. Sun, A. Salvekar, H. Chou, Chuan-cheng Cheng, F. Xu, A. Scherer, Y. Fainman","doi":"10.1364/qo.1997.qtha.4","DOIUrl":"https://doi.org/10.1364/qo.1997.qtha.4","url":null,"abstract":"Subwavelength multilayer binary gratings (SMBG) can be seen as a 2-D periodic structures (see Fig.1a) with two periodic directions along the grating vector and the multilayer cascading direction. Such structures combine strong form- birefringence1,2 of the subwavelength grating with high reflectivity due the multilayer structure allowing us to design polarization sensitive microdevices, such as polarization selective mirror and polarizing beam splitter. Recently3 we introduce a new polarizing beam splitter (PBS) microdevice design built of SMBGs. Not only this novel design increases the angular and spectral range of the PBS microdevice in comparison to conventional PBS designs, but most importantly, our microdevice can operate with normally incident light, acting as a high-efficiency polarization-selective mirror. Microdevice with such features are critical for microlaser designs. Since the SMBG is a 2-D periodic structure, it can also be used to design a 2-D photonic crystal. In this manuscript, we summarize the design, modeling, and characterization of the SMBG structure designed to implement polarization sensitive microdevice, and also introduce and discuss a 2-D photonic crystal design based on SMBG.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"31 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87465869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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