Pub Date : 2020-01-01DOI: 10.1007/978-3-031-18286-0
K. W. Böer, U. W. Pohl
{"title":"Semiconductor Physics","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-031-18286-0","DOIUrl":"https://doi.org/10.1007/978-3-031-18286-0","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90300914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-69150-3_7
K. W. Böer, U. W. Pohl
{"title":"Quantum Mechanics of Electrons in Crystals","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_7","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_7","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74201902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-06540-3_1-1
K. W. Böer, U. W. Pohl
{"title":"Properties and Growth of Semiconductors","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-06540-3_1-1","DOIUrl":"https://doi.org/10.1007/978-3-319-06540-3_1-1","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88130174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Possible mechanisms of transformation of defects in semiconductor structures under action of electromagnetic radiation in the microwave range and pulsed magnetic field have been analyzed. Electrical-resonance effects under nonthermal action of electromagnetic fields have been considered, namely: resonant detachment of dislocations and destruction of impurity complexes in semiconductor crystals, electrical-resonance transformation of defects in semiconductor crystals under action of weak pulsed magnetic fields; magnetic-resonance effects on defects in semiconductor crystals under action of weak magnetic and electromagnetic fields. It has been shown that alternative interaction mechanisms should be used to explain a large number of reliably established magnetically induced effects and phenomena associated with the nonthermal effects of microwave fields. There are two the most probable mechanisms: (i) spin-dependent reactions of paramagnetic defects in semiconductor crystals, as a result of which detachment and subsequent movement of dislocations in the field of internal stresses and (ii) resonant phenomena of various nature occur, which, generally, do not require high energies, and have been realized when the oscillation frequencies of the system and the external action coincide. A sharp increase in the amplitude of oscillations leads to detachment of dislocations and destruction of impurity complexes with subsequent movement and diffusion under action of a mosaic of internal mechanical stresses in the crystal. The principal physical identity of the influence of a weak magnetic field and nonthermal action of microwave radiation on a semiconductor material has been shown.
{"title":"Transformation of structural defects in semiconductor under action of electromagnetic and magnetic fields causing resonant phenomena","authors":"G. Milenin","doi":"10.15407/spqeo22.01.039","DOIUrl":"https://doi.org/10.15407/spqeo22.01.039","url":null,"abstract":"Possible mechanisms of transformation of defects in semiconductor structures under action of electromagnetic radiation in the microwave range and pulsed magnetic field have been analyzed. Electrical-resonance effects under nonthermal action of electromagnetic fields have been considered, namely: resonant detachment of dislocations and destruction of impurity complexes in semiconductor crystals, electrical-resonance transformation of defects in semiconductor crystals under action of weak pulsed magnetic fields; magnetic-resonance effects on defects in semiconductor crystals under action of weak magnetic and electromagnetic fields. It has been shown that alternative interaction mechanisms should be used to explain a large number of reliably established magnetically induced effects and phenomena associated with the nonthermal effects of microwave fields. There are two the most probable mechanisms: (i) spin-dependent reactions of paramagnetic defects in semiconductor crystals, as a result of which detachment and subsequent movement of dislocations in the field of internal stresses and (ii) resonant phenomena of various nature occur, which, generally, do not require high energies, and have been realized when the oscillation frequencies of the system and the external action coincide. A sharp increase in the amplitude of oscillations leads to detachment of dislocations and destruction of impurity complexes with subsequent movement and diffusion under action of a mosaic of internal mechanical stresses in the crystal. The principal physical identity of the influence of a weak magnetic field and nonthermal action of microwave radiation on a semiconductor material has been shown.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2019-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43460529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new method to analyze reverse characteristics of 4H-SiC Schottky barrier diode has been presented in this paper. The model incorporates both the current induced by the tunneling of carriers through the Schottky barrier and that induced by the thermionic emission of carriers across the metal–semiconductor interface. The treatment includes the effect of image force lowering both the thermionic emission and electron tunneling processes. This analysis allowed us to separate and identify the thermionic emission and tunneling components of the total current. The experimental reverse transition voltage between thermionic emission and tunneling process can be determined from the intersection of the two components by using two models; bias dependence and no bias dependence of barrier height. For high temperatures, the experimental reverse transition voltage increases with increasing the temperature and decreases with increasing the doping concentration as predicted by Latreche’s model.
{"title":"Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes","authors":"A. Latreche","doi":"10.15407/spqeo22.01.019","DOIUrl":"https://doi.org/10.15407/spqeo22.01.019","url":null,"abstract":"A new method to analyze reverse characteristics of 4H-SiC Schottky barrier diode has been presented in this paper. The model incorporates both the current induced by the tunneling of carriers through the Schottky barrier and that induced by the thermionic emission of carriers across the metal–semiconductor interface. The treatment includes the effect of image force lowering both the thermionic emission and electron tunneling processes. This analysis allowed us to separate and identify the thermionic emission and tunneling components of the total current. The experimental reverse transition voltage between thermionic emission and tunneling process can be determined from the intersection of the two components by using two models; bias dependence and no bias dependence of barrier height. For high temperatures, the experimental reverse transition voltage increases with increasing the temperature and decreases with increasing the doping concentration as predicted by Latreche’s model.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2019-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41266599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Tatyanko, P. Neyezhmakov, Ye. P. Timofeev, A. S. Litvinenko, K. I. Suvorova, O. M. Didenko
The ways to increase the quantum efficiency of trap detectors of optical radiation have been discussed. Presented here has been a brief review of trap detectors, in which high quantum efficiency is ensured by their design. The obtained results of performed studies confirm the practical meaning of the new developed schemes for the construction of trap detectors. Results of investigations of optical receivers based on trap detectors that were applied at the state primary measurement standards of the optical radiation units have been presented, too.
{"title":"Quantum efficiency improvement of optical radiation trap-detectors","authors":"D. Tatyanko, P. Neyezhmakov, Ye. P. Timofeev, A. S. Litvinenko, K. I. Suvorova, O. M. Didenko","doi":"10.15407/SPQEO22.01.104","DOIUrl":"https://doi.org/10.15407/SPQEO22.01.104","url":null,"abstract":"The ways to increase the quantum efficiency of trap detectors of optical radiation have been discussed. Presented here has been a brief review of trap detectors, in which high quantum efficiency is ensured by their design. The obtained results of performed studies confirm the practical meaning of the new developed schemes for the construction of trap detectors. Results of investigations of optical receivers based on trap detectors that were applied at the state primary measurement standards of the optical radiation units have been presented, too.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2019-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46475995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The method of processing the data of electrophysical investigations of ohmic contacts has been developed. It allows obtaining more accurate results of measuring the contact resistance and additional information by analyzing the statistical and spatial distribution of input data. To test the method, the Au–Ge–TiB2–Au contact to n-n -GaAs was used. The analysis of frequency distribution for the total resistance, specific contact resistance and surface resistance of semiconductor has been carried out. The spatial distribution of these parameters has been analyzed. With taking the linear gradient of specific resistivity into account, the value of the contact resistance has been clarified. We have achieved reduction of half-width of the distribution by 14%, that is, reduction of the error in determining the contact resistance. The method has been developed for correct analyzing the impacts of technological treatments and degradation processes and has been oriented on research purposes. Evaluation of the gradient distributions of the contact resistance and the resistance of semiconductor can be used to identify the defects in the technological processes of manufacturing devices.
{"title":"Method for data processing in application to ohmic contacts","authors":"A. Belyaev","doi":"10.15407/spqeo22.01.011","DOIUrl":"https://doi.org/10.15407/spqeo22.01.011","url":null,"abstract":"The method of processing the data of electrophysical investigations of ohmic contacts has been developed. It allows obtaining more accurate results of measuring the contact resistance and additional information by analyzing the statistical and spatial distribution of input data. To test the method, the Au–Ge–TiB2–Au contact to n-n -GaAs was used. The analysis of frequency distribution for the total resistance, specific contact resistance and surface resistance of semiconductor has been carried out. The spatial distribution of these parameters has been analyzed. With taking the linear gradient of specific resistivity into account, the value of the contact resistance has been clarified. We have achieved reduction of half-width of the distribution by 14%, that is, reduction of the error in determining the contact resistance. The method has been developed for correct analyzing the impacts of technological treatments and degradation processes and has been oriented on research purposes. Evaluation of the gradient distributions of the contact resistance and the resistance of semiconductor can be used to identify the defects in the technological processes of manufacturing devices.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2019-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47648077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Formation of condensed films and solution aggregates of four different monomethincyanine dyes have been studied using optical absorption spectroscopy and simulation methods, depending on variation of the dye monomer structure. The structure of molecular dimer as a basic unit for formation of the condensed state was found to be largely dependent on heteroatoms in the dye structure and the presence of end hydrocarbon groups. The above factors mainly determine the mutual position of molecules in the dimer. It has been found that mutual orientation, intermolecular distance and overlap of the adjacent molecules are the major factors influencing absorption spectra of dye aggregates. The dimer geometry that plays the primary role in film nucleation, however, has been shown to undergo changes depending on the temperature conditions or film thickness.
{"title":"Tuned aggregation and film self-assembly of monomethincyanine dyes through variation of their monomer structure","authors":"M. Sieryk","doi":"10.15407/spqeo22.01.053","DOIUrl":"https://doi.org/10.15407/spqeo22.01.053","url":null,"abstract":"Formation of condensed films and solution aggregates of four different monomethincyanine dyes have been studied using optical absorption spectroscopy and simulation methods, depending on variation of the dye monomer structure. The structure of molecular dimer as a basic unit for formation of the condensed state was found to be largely dependent on heteroatoms in the dye structure and the presence of end hydrocarbon groups. The above factors mainly determine the mutual position of molecules in the dimer. It has been found that mutual orientation, intermolecular distance and overlap of the adjacent molecules are the major factors influencing absorption spectra of dye aggregates. The dimer geometry that plays the primary role in film nucleation, however, has been shown to undergo changes depending on the temperature conditions or film thickness.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2019-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42960386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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