Pub Date : 2020-09-24DOI: 10.1093/oso/9780198759867.003.0002
S. Tiwari
Chapter 2 brings forth the links between entropy and energy through their intimate link to information. Probabilities—as a statistical tool when there are unknowns—connect to information as well as to the various forms of entropy. Entropy is a variable introduced to characterize circumstances involving unknowns. Boltzmann entropy, von Neumann entropy, Shannon entropy and others can be viewed through this common viewpoint. This chapter broadens this discussion to include Fisher entropy—a measure that stresses locality—and the principle of minimum negentropy (or maximum entropy) to show how a variety of physical descriptions represented by equations such as the Schrödinger equation, diffusion equations, Maxwell-Boltzmann distributions, et cetera, can be seen through a probabilistic information-centric perspective.
{"title":"Entropy, information and energy","authors":"S. Tiwari","doi":"10.1093/oso/9780198759867.003.0002","DOIUrl":"https://doi.org/10.1093/oso/9780198759867.003.0002","url":null,"abstract":"Chapter 2 brings forth the links between entropy and energy through their intimate link to information. Probabilities—as a statistical tool when there are unknowns—connect to information as well as to the various forms of entropy. Entropy is a variable introduced to characterize circumstances involving unknowns. Boltzmann entropy, von Neumann entropy, Shannon entropy and others can be viewed through this common viewpoint. This chapter broadens this discussion to include Fisher entropy—a measure that stresses locality—and the principle of minimum negentropy (or maximum entropy) to show how a variety of physical descriptions represented by equations such as the Schrödinger equation, diffusion equations, Maxwell-Boltzmann distributions, et cetera, can be seen through a probabilistic information-centric perspective.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80649264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-24DOI: 10.1093/oso/9780198759867.003.0007
S. Tiwari
This chapter discusses the energetics of point perturbations arising from intrinsic and extrinsic defects, and intentional and unintentional impurities. Point perturbations can be short range or long range. This requires the inclusion of core potential, exchange correlation and Hartree or Hartree-Fock potential. Hubbard energy, which is useful for Hartree calculations in a localized state, is introduced. An approach to calculating the behavior arising in shallow dopants (long range) and deep centers (short range) is presented. The tight binding defect-molecule model is used to explore the appearance of bonding and antibonding states in vacancies, interstitials and substitutional deep centers and some common complexes, such as the DX center, using configuration coordinates to understand the electronic and lattice energy contributions in the defect behavior. Finally, the chapter summarizes other important centers, such as the Pb center and the F center, before reviewing the implications of centers in light interaction and Poole-Frenkel conduction.
{"title":"Point perturbations","authors":"S. Tiwari","doi":"10.1093/oso/9780198759867.003.0007","DOIUrl":"https://doi.org/10.1093/oso/9780198759867.003.0007","url":null,"abstract":"This chapter discusses the energetics of point perturbations arising from intrinsic and extrinsic defects, and intentional and unintentional impurities. Point perturbations can be short range or long range. This requires the inclusion of core potential, exchange correlation and Hartree or Hartree-Fock potential. Hubbard energy, which is useful for Hartree calculations in a localized state, is introduced. An approach to calculating the behavior arising in shallow dopants (long range) and deep centers (short range) is presented. The tight binding defect-molecule model is used to explore the appearance of bonding and antibonding states in vacancies, interstitials and substitutional deep centers and some common complexes, such as the DX center, using configuration coordinates to understand the electronic and lattice energy contributions in the defect behavior. Finally, the chapter summarizes other important centers, such as the Pb center and the F center, before reviewing the implications of centers in light interaction and Poole-Frenkel conduction.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79527362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-69150-3_3
K. W. Böer, U. W. Pohl
{"title":"The Structure of Semiconductors","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_3","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_3","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73565064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-06540-3_29-3
K. W. Böer, U. W. Pohl
{"title":"Carrier Generation","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-06540-3_29-3","DOIUrl":"https://doi.org/10.1007/978-3-319-06540-3_29-3","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76703866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-69150-3_25
K. W. Böer, U. W. Pohl
{"title":"Carriers in Magnetic Fields and Temperature Gradients","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_25","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_25","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88950739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-69150-3_28
K. W. Böer, U. W. Pohl
{"title":"Carrier Transport Induced and Controlled by Defects","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_28","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_28","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83241310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-06540-3_18-3
K. W. Böer, U. W. Pohl
{"title":"Shallow-Level Centers","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-06540-3_18-3","DOIUrl":"https://doi.org/10.1007/978-3-319-06540-3_18-3","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88779080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-69150-3_12
K. W. Böer, U. W. Pohl
{"title":"Photon–Free-Electron Interaction","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_12","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_12","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79321371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-69150-3_6
K. W. Böer, U. W. Pohl
{"title":"The Origin of Band Structure","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_6","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_6","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75070634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1007/978-3-319-69150-3_27
K. W. Böer, U. W. Pohl
{"title":"Carrier Transport in Low-Dimensional Semiconductors","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_27","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_27","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82863837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：