Pub Date : 2023-12-10DOI: 10.3103/s8756699023050138
E. V. Arbuzov, V. A. Arbuzov, Yu. N. Dubnishchev, O. S. Zolotukhina, M. M. Lapikov, V. V. Lukashov
Abstract
The possibility of processing small-view hilbertograms by the Gerchberg–Papoulis method to restore the spatial distribution of the refractive index was studied. The method consists in iterative transitions from the function estimates in the frequency and coordinate spaces with correction based on a priori information. Numerical modeling of the refractive index reconstruction for various test functions by the Gerchberg–Papoulis method using the Radon data, known for four angles, has been carried out. Using a four-angle tomographic complex implemented on the basis of a modified IAB-463M shadow device, experimental studies were carried out by the example of optical Hilbert diagnostics of reacting media in a high-speed shooting mode (up to 2000 frames per second).
{"title":"The Gerchberg–Papoulis Method in Low-Angle Optical Hilbert Diagnostics of Phase Structures","authors":"E. V. Arbuzov, V. A. Arbuzov, Yu. N. Dubnishchev, O. S. Zolotukhina, M. M. Lapikov, V. V. Lukashov","doi":"10.3103/s8756699023050138","DOIUrl":"https://doi.org/10.3103/s8756699023050138","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The possibility of processing small-view hilbertograms by the Gerchberg–Papoulis method to restore the spatial distribution of the refractive index was studied. The method consists in iterative transitions from the function estimates in the frequency and coordinate spaces with correction based on a priori information. Numerical modeling of the refractive index reconstruction for various test functions by the Gerchberg–Papoulis method using the Radon data, known for four angles, has been carried out. Using a four-angle tomographic complex implemented on the basis of a modified IAB-463M shadow device, experimental studies were carried out by the example of optical Hilbert diagnostics of reacting media in a high-speed shooting mode (up to 2000 frames per second).</p>","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"13 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140888060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-01DOI: 10.3103/s8756699023060031
Abstract
Epitaxial and polycrystalline films of iron (Fe), chromium (Cr), and calcium (Ca) silicides of various thicknesses (from 3.2 to 380 nm) were grown on silicon and sapphire substrates in ultrahigh vacuum by three methods (solid-phase epitaxy, reactive epitaxy and molecular beam epitaxy). The crystal structure and matching with the silicon lattice were determined for them using the X-ray diffraction method. A comparative analysis of Raman scattering spectra and far-IR spectroscopy spectra showed that films of semiconductor silicides have the strongest Raman peaks, and the detected shifts in their positions are caused by distortions in the silicide lattices. It has been established that in films of iron and chromium monosilicides at a fixed laser excitation wavelength ((lambda=628.3) nm) and a power of 3.4 mW, the strength of the Raman peaks decreases with decreasing film thickness and they disappear completely at a thickness below 10 nm. Chromium trisilicide films were grown on single-crystal sapphire, which made it possible for the first time to detect for it active Raman phonons at (lambda=488) nm and a power of 0.42 mW at wave numbers 214.3 and 273.1 cm({}^{-1}). The studied films of transition metal monosilicides are of significant interest from the perspective of their possible use as materials for thermoelectronics and spintronics, and systematized information on active Raman phonons and IR active phonons will make it possible to quickly determine the type of phase formed immediately after film growth.
{"title":"Raman Scattering of Light in Thin Films of Fe, Cr, and Ca Silicides on Silicon and Sapphire","authors":"","doi":"10.3103/s8756699023060031","DOIUrl":"https://doi.org/10.3103/s8756699023060031","url":null,"abstract":"<span> <h3>Abstract</h3> <p>Epitaxial and polycrystalline films of iron (Fe), chromium (Cr), and calcium (Ca) silicides of various thicknesses (from 3.2 to 380 nm) were grown on silicon and sapphire substrates in ultrahigh vacuum by three methods (solid-phase epitaxy, reactive epitaxy and molecular beam epitaxy). The crystal structure and matching with the silicon lattice were determined for them using the X-ray diffraction method. A comparative analysis of Raman scattering spectra and far-IR spectroscopy spectra showed that films of semiconductor silicides have the strongest Raman peaks, and the detected shifts in their positions are caused by distortions in the silicide lattices. It has been established that in films of iron and chromium monosilicides at a fixed laser excitation wavelength (<span> <span>(lambda=628.3)</span> </span> nm) and a power of 3.4 mW, the strength of the Raman peaks decreases with decreasing film thickness and they disappear completely at a thickness below 10 nm. Chromium trisilicide films were grown on single-crystal sapphire, which made it possible for the first time to detect for it active Raman phonons at <span> <span>(lambda=488)</span> </span> nm and a power of 0.42 mW at wave numbers 214.3 and 273.1 cm<span> <span>({}^{-1})</span> </span>. The studied films of transition metal monosilicides are of significant interest from the perspective of their possible use as materials for thermoelectronics and spintronics, and systematized information on active Raman phonons and IR active phonons will make it possible to quickly determine the type of phase formed immediately after film growth.</p> </span>","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"183 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140300376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-12-01DOI: 10.3103/s8756699023060122
Abstract
The results are presented on changes in the parameters of pseudo-MOS transistors based on silicon-on-sapphire (SOS) mesastructures upon irradiation with swift heavy ions (SHIs) of Xe({}^{+26}) (150 MeV) and Bi({}^{+51}) (670 MeV) to a fluence of (2,times,10^{11}) cm({}^{-2}), indicating the accumulation of mechanical stresses and charges in the intermediate ferroelectric (Fe) layers of HfO({}_{2}) films (HO) with a thickness of 20 nm and Hf({}_{0.5})Zr({}_{0.5})O({}_{2}) (HZO) laminated with inserts of Al({}_{2})O({}_{3}) monolayers (HA, HZA) or without them. SOS heterostructures are formed by direct bonding and hydrogen transfer of a silicon film (500 nm) with HA and HZA nanolayers pre-applied by plasma-stimulated atomic layer deposition onto sapphire. Electrophysical parameters are determined from the drain current—gate voltage characteristics ((I_{textrm{ds}})–(V_{textrm{g}})) of pseudo-MOS transistors with tungsten drain/source electrodes (100 nm) deposited by magnetron sputtering on SOS mesastructures through a lithographic mask. Comparison of the characteristics with Raman scattering analysis showed the correspondence of the mechanical compressive stresses introduced by SHI irradiation in silicon with the ratios of the Xe and Bi track volumes in the HA ferroelectric and sapphire.
摘要 本文介绍了基于蓝宝石硅（SOS）介质结构的伪MOS晶体管在Xe （{}^{+26}）（150MeV）和Bi （{}^{+51}）（670MeV）的迅猛重离子（SHIs）辐照下参数的变化，辐照流量为（2、cm （{}^{-2}），表明在厚度为 20 nm 的 HfO （{}_{2}）薄膜（HO）和 Hf （{}_{0.5}）Zr （{}_{0.5}）O （{}_{2}）（HZO）层压，并插入 Al （{}_{2}）O （{}_{3}）单层（HA、HZA）或不插入它们。SOS 异质结构是通过等离子体刺激原子层沉积在蓝宝石上，将预先涂有 HA 和 HZA 纳米层的硅薄膜（500 nm）直接键合和氢转移形成的。电物理参数是根据通过光刻掩模磁控溅射沉积在 SOS 介面结构上的钨漏极/源极（100 nm）伪 MOS 晶体管的漏极电流-栅极电压特性（(I_textrm{ds}}）-(V_textrm{g}}）确定的。将这些特性与拉曼散射分析进行比较后发现，SHI 照射在硅中引入的机械压缩应力与 HA 铁电体和蓝宝石中 Xe 和 Bi 磁道体积的比率是一致的。
{"title":"Degradation of the Properties of SOS Ferroelectric Pseudo-MOS Transistors after Irradiation with Fast Heavy Xe and Bi Ions","authors":"","doi":"10.3103/s8756699023060122","DOIUrl":"https://doi.org/10.3103/s8756699023060122","url":null,"abstract":"<span> <h3>Abstract</h3> <p>The results are presented on changes in the parameters of pseudo-MOS transistors based on silicon-on-sapphire (SOS) mesastructures upon irradiation with swift heavy ions (SHIs) of Xe<span> <span>({}^{+26})</span> </span> (150 MeV) and Bi<span> <span>({}^{+51})</span> </span> (670 MeV) to a fluence of <span> <span>(2,times,10^{11})</span> </span> cm<span> <span>({}^{-2})</span> </span>, indicating the accumulation of mechanical stresses and charges in the intermediate ferroelectric (Fe) layers of HfO<span> <span>({}_{2})</span> </span> films (HO) with a thickness of 20 nm and Hf<span> <span>({}_{0.5})</span> </span>Zr<span> <span>({}_{0.5})</span> </span>O<span> <span>({}_{2})</span> </span> (HZO) laminated with inserts of Al<span> <span>({}_{2})</span> </span>O<span> <span>({}_{3})</span> </span> monolayers (HA, HZA) or without them. SOS heterostructures are formed by direct bonding and hydrogen transfer of a silicon film (500 nm) with HA and HZA nanolayers pre-applied by plasma-stimulated atomic layer deposition onto sapphire. Electrophysical parameters are determined from the drain current—gate voltage characteristics (<span> <span>(I_{textrm{ds}})</span> </span>–<span> <span>(V_{textrm{g}}))</span> </span> of pseudo-MOS transistors with tungsten drain/source electrodes (100 nm) deposited by magnetron sputtering on SOS mesastructures through a lithographic mask. Comparison of the characteristics with Raman scattering analysis showed the correspondence of the mechanical compressive stresses introduced by SHI irradiation in silicon with the ratios of the Xe and Bi track volumes in the HA ferroelectric and sapphire.</p> </span>","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"36 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140300272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.3103/s8756699023050047
Abstract
A technique for testing the hypothesis about the independence of random variables, based on a nonparametric pattern recognition algorithm, is used in the analysis of ambiguous dependencies. The pattern recognition algorithm meets the maximum likelihood criterion. The assessment of distribution laws in classes is carried out using initial statistical data under the assumption of independence and dependence of the random variables being compared. To estimate probability densities in classes, nonparametric Rosenblatt–Parzen statistics are used. The blurring coefficients of kernel functions in nonparametric estimates of probability densities in classes are determined from the condition of the minimum of their standard deviations. Under these conditions, estimates of the probabilities of pattern recognition errors in classes are calculated. Based on their minimum value, a decision is made on the independence or dependence of random variables. The hypothesis about a significant difference in the probabilities of pattern recognition errors in classes is tested. The use of the proposed technique allows us to bypass the problem of decomposing the range of values of random variables into intervals, which is characteristic of the Pearson criterion. The effectiveness of the proposed method is compared with the Pearson criterion. The results of computational experiments using the studied criteria in the analysis of ambiguous dependencies between random variables are presented.
{"title":"Comparison of Methods for Testing the Hypothesis of Independence of Random Variables Based on a Nonparametric Classifier and Pearson’s Chi-Squared Test","authors":"","doi":"10.3103/s8756699023050047","DOIUrl":"https://doi.org/10.3103/s8756699023050047","url":null,"abstract":"<span> <h3>Abstract</h3> <p>A technique for testing the hypothesis about the independence of random variables, based on a nonparametric pattern recognition algorithm, is used in the analysis of ambiguous dependencies. The pattern recognition algorithm meets the maximum likelihood criterion. The assessment of distribution laws in classes is carried out using initial statistical data under the assumption of independence and dependence of the random variables being compared. To estimate probability densities in classes, nonparametric Rosenblatt–Parzen statistics are used. The blurring coefficients of kernel functions in nonparametric estimates of probability densities in classes are determined from the condition of the minimum of their standard deviations. Under these conditions, estimates of the probabilities of pattern recognition errors in classes are calculated. Based on their minimum value, a decision is made on the independence or dependence of random variables. The hypothesis about a significant difference in the probabilities of pattern recognition errors in classes is tested. The use of the proposed technique allows us to bypass the problem of decomposing the range of values of random variables into intervals, which is characteristic of the Pearson criterion. The effectiveness of the proposed method is compared with the Pearson criterion. The results of computational experiments using the studied criteria in the analysis of ambiguous dependencies between random variables are presented.</p> </span>","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"31 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140072459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.3103/s8756699023050072
Abstract
The paper provides reasoning for using principal component analysis to assess the generalized characteristics of defects in processing of multiparameter acoustic signals of the multiple mirror-shadow technique for bar stock control. This technique made it possible to reduce the number of signal parameters when forming rejection criteria, develop a methodology for assessing the generalized defect characteristics, and formulate a complex rejection criterion based on the unacceptable value of the generalized defect characteristics for objects made of any grade of steel and any diameter. The results of testing the proposed approach for estimating the generalized characteristics of natural defects using the obtained regression dependence are in satisfactory agreement with the results of metallographic studies
{"title":"Principal Components Analysis for Processing Multiparameter Acoustic Signals of the Mirror-Shadow Technique for Bar Stock Control","authors":"","doi":"10.3103/s8756699023050072","DOIUrl":"https://doi.org/10.3103/s8756699023050072","url":null,"abstract":"<span> <h3>Abstract</h3> <p>The paper provides reasoning for using principal component analysis to assess the generalized characteristics of defects in processing of multiparameter acoustic signals of the multiple mirror-shadow technique for bar stock control. This technique made it possible to reduce the number of signal parameters when forming rejection criteria, develop a methodology for assessing the generalized defect characteristics, and formulate a complex rejection criterion based on the unacceptable value of the generalized defect characteristics for objects made of any grade of steel and any diameter. The results of testing the proposed approach for estimating the generalized characteristics of natural defects using the obtained regression dependence are in satisfactory agreement with the results of metallographic studies</p> </span>","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"108 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140072249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-01DOI: 10.3103/s8756699023040015
Abstract
The conflict situation associated with the motion of clusters incorporating several hundreds of small-size control objects in the responsibility field of the radar station of an external observer is considered. The task of an external observer is to trace and follow the motion of a cluster and, in the case of hostile situation, act on it. The task of the cluster is to create a maximum uncertainty of decision making by the external observer. The cluster motion model is developed as a Reynolds swarm behavior model complemented with special coefficients. Three methods for the formation of different clusters close to geometric structures transformed in the process of motion are developed. The hypothesis that it is potentially possible to create the situations when a swarm will be perceived by an external observer as an integer large object rather than the original one by varying the geometry, shape, and number of objects in a swarm cluster is formulated and confirmed by mathematical modelling. It is shown that the clusters simulating hostile objects can be created if the decision making criterion is the effective dispersion area.
{"title":"Methods for the Formation of Spatiotemporal Clusters of Objects in an Unfriendly Environment","authors":"","doi":"10.3103/s8756699023040015","DOIUrl":"https://doi.org/10.3103/s8756699023040015","url":null,"abstract":"<span> <h3>Abstract</h3> <p>The conflict situation associated with the motion of clusters incorporating several hundreds of small-size control objects in the responsibility field of the radar station of an external observer is considered. The task of an external observer is to trace and follow the motion of a cluster and, in the case of hostile situation, act on it. The task of the cluster is to create a maximum uncertainty of decision making by the external observer. The cluster motion model is developed as a Reynolds swarm behavior model complemented with special coefficients. Three methods for the formation of different clusters close to geometric structures transformed in the process of motion are developed. The hypothesis that it is potentially possible to create the situations when a swarm will be perceived by an external observer as an integer large object rather than the original one by varying the geometry, shape, and number of objects in a swarm cluster is formulated and confirmed by mathematical modelling. It is shown that the clusters simulating hostile objects can be created if the decision making criterion is the effective dispersion area.</p> </span>","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"166 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139459938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.3103/s8756699023030056
A. V. Chekhonadskikh
{"title":"Polynomial Design of Low-Order Controllers for SISO DAE Systems","authors":"A. V. Chekhonadskikh","doi":"10.3103/s8756699023030056","DOIUrl":"https://doi.org/10.3103/s8756699023030056","url":null,"abstract":"","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135194232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.3103/s8756699023030093
V. P. Kir’yanov, A. V. Kir’yanov
{"title":"On Possibility of Complete Suppression of the Instrumental Error Component from Inaccuracy of a Diffraction Grating","authors":"V. P. Kir’yanov, A. V. Kir’yanov","doi":"10.3103/s8756699023030093","DOIUrl":"https://doi.org/10.3103/s8756699023030093","url":null,"abstract":"","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135194901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.3103/s8756699023030135
V. P. Yushchenko, S. A. Litvinenko, O. V. Gofman, T. V. Duluba
{"title":"Experimental Validation of the Theoretical Provision of Circular Aperture Synthesis","authors":"V. P. Yushchenko, S. A. Litvinenko, O. V. Gofman, T. V. Duluba","doi":"10.3103/s8756699023030135","DOIUrl":"https://doi.org/10.3103/s8756699023030135","url":null,"abstract":"","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135194233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01DOI: 10.3103/s8756699023030111
S. D. Poletaev
{"title":"Numerical and Experimental Investigations of the Photothermal Effect in Thin Films of Molybdenum Oxide under Laser Ablation","authors":"S. D. Poletaev","doi":"10.3103/s8756699023030111","DOIUrl":"https://doi.org/10.3103/s8756699023030111","url":null,"abstract":"","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135194911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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