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Consistent c-axis orientation and reinforced magnetoelectric coupling performance in bulk BaSrCo2Fe11AlO22 块状 BaSrCo2Fe11AlO22 中一致的 c 轴取向和强化的磁电耦合性能
Pub Date : 2024-04-22 DOI: 10.1063/5.0198180
Dongpeng Zhao, Jun Li, H. Bai, Huantong Wu, Xiping Chen, Guangai Sun, Zhongxiang Zhou
Consistent c-axis orientation characteristics toward the direction of applied pressure of Y-type BaSrCo2Fe11AlO22 (BSCFAO-θ) were successfully prepared by the strategy of hot pressing. The samples’ magnetoelectric coupling performance was greatly enhanced by the strategy of hot pressing than that of the traditional solid reaction method. The magnetoelectric current of BSCFAO-θ (θ = 0°) (12.06 μA/m2) was nearly 5 times higher than BSCFAO-SS (2.24 μA/m2). The magnetoelectric polarization of BSCFAO-θ (θ = 0°) (32.82 μC/m2) was nearly 4 times higher than that of BSCFAO-SS (8.31 μC/m2). The magnetoelectric coupling coefficients of BSCFAO-θ (θ = 0°) (1880 ps/m) were nearly 4 times higher than those of BSCFAO-SS (404 ps/m). The enhancement of magnetoelectric polarization of BSCFAO-θ (θ = 0°) can be attributed to the uniform c-axis orientation, which reinforced magnetoelectric polarization compared with none orientation that eliminated the magnetoelectric polarization on grain boundaries. The magnetoelectric coupling performance of BSCFAO-θ presented a gradually decreasing trend with the angle changing from 0° to 90° for the changing of orientation. Compared with traditional solid reaction methods, the strategy of hot pressing inhibits grain growth and increases grain boundaries, thus facilitating the enhancement of grain boundaries’ resistivity, and the electrical resistivity of BSCFAO-θ (3.08 × 1010 Ω cm) was nearly 10 000 times higher than that of BSCFAO-SS (2.5 × 106 Ω cm), which also benefits the magnetoelectric polarization performance of BSCFAO-θ. Therefore, the hot-pressing strategy can contribute to the forming of oriented ceramics and enhance the grain boundaries’ resistivity to improve magnetoelectric coupling performance.
通过热压策略成功制备出了具有一致c轴取向特性的Y型BaSrCo2Fe11AlO22(BSCFAO-θ)。与传统的固体反应法相比,热压法大大提高了样品的磁电耦合性能。BSCFAO-θ (θ = 0°) 的磁电电流(12.06 μA/m2)是 BSCFAO-SS (2.24 μA/m2)的近 5 倍。BSCFAO-θ 的磁电极化(θ = 0°)(32.82 μC/m2)比 BSCFAO-SS 的磁电极化(8.31 μC/m2)高出近 4 倍。BSCFAO-θ (θ = 0°) 的磁电耦合系数(1880 ps/m)比 BSCFAO-SS 的磁电耦合系数(404 ps/m)高出近 4 倍。BSCFAO-θ (θ = 0°) 磁电极化的增强可归因于均匀的 c 轴取向,与消除晶界磁电极化的无取向相比,均匀的 c 轴取向增强了磁电极化。随着取向的变化,BSCFAO-θ 的磁电耦合性能随着角度从 0°到 90°的变化呈逐渐下降的趋势。与传统的固体反应方法相比,热压策略抑制了晶粒生长,增加了晶界,从而有利于提高晶界电阻率,BSCFAO-θ 的电阻率(3.08 × 1010 Ω cm)比 BSCFAO-SS 的电阻率(2.5 × 106 Ω cm)高出近 10000 倍,这也有利于 BSCFAO-θ 磁电极化性能的提高。因此,热压策略有助于形成取向陶瓷,提高晶界电阻率,从而改善磁电耦合性能。
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引用次数: 0
Electronic structures of skyrmionic polycrystalline MnSi thin film studied by resonance photoemission and x-ray near edge spectroscopy 利用共振光发射和 X 射线近缘光谱研究天电离多晶锰硅薄膜的电子结构
Pub Date : 2024-04-22 DOI: 10.1063/5.0202229
S. Jena, R. Urkude, W.-Y. Choi, K. K. Pandey, S. Karwal, M. Jung, J. Gardner, B. Ghosh, V. R. Singh
Magnetic nanometric skyrmions are small complex vortex-like topological defects, mainly found in non-centrosymmetric crystals such as MnSi. They have potential applications for future spintronic devices. In this article, the structural, electronic, and magnetic states of the Mn atoms in a polycrystalline MnSi thin film facing a c-sapphire substrate were studied using x-ray diffraction, x-ray photo-emission spectroscopy, resonance photoemission spectroscopy (RPES), and extended x-ray absorption fine structure (EXAFS). The valence band spectra indicate the metallic nature of the film. The RPES study reveals the presence of major itinerant Mn 3d states near EF and also the mixed Mn 3d and Si 3s–3p states from 5.3 to 11.3 eV. The EXAFS spectrum does not show the existence of oxygen vacancies in the system, and the obtained magnetic moment in the non-stoichiometric MnSi thin film is a combination of the partially itinerant and partially localized Mn 3d states.
磁性纳米天幕是一种小型复杂的涡旋状拓扑缺陷,主要存在于锰硅等非中心对称晶体中。它们有可能应用于未来的自旋电子器件。本文利用 X 射线衍射、X 射线光发射光谱、共振光发射光谱(RPES)和扩展 X 射线吸收精细结构(EXAFS)研究了面向 c 蓝宝石衬底的多晶锰硅薄膜中锰原子的结构、电子和磁态。价带光谱显示了薄膜的金属性质。共振光发射光谱研究显示,在 EF 附近存在主要的锰 3d 流动态,在 5.3 至 11.3 eV 之间还存在锰 3d 和硅 3s-3p 混合态。EXAFS 光谱没有显示出系统中存在氧空位,而在非化学计量锰硅薄膜中获得的磁矩是部分巡回态和部分局部态 Mn 3d 的组合。
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引用次数: 0
Impulse coupling measurement of metallic and carbon targets during laser ablation through ballistic pendulum experiments and simulations 通过弹道摆实验和模拟,测量激光烧蚀过程中金属和碳靶的脉冲耦合度
Pub Date : 2024-04-22 DOI: 10.1063/5.0201435
C. Le Bras, L. Berthe, L. Videau, S. Baton, M. Boustie, S. Boyer, C. Rousseaux, E. Brambrink, J M Chevalier, J. Houy, B. Aubert, B. Jodar, D. Loison, D. Hébert
Laser ablation propulsion and orbit cleaning are developing areas of research. The general aim of laser-based techniques applied to this field is to maximize the momentum transfer produced by a laser shot. This work presents results from ballistic pendulum experiments under vacuum on aluminum, copper, tin, gold, and porous graphite targets. The work has focused on the metrology of the laser experiments to ensure good stability over a wide range of laser parameters (laser intensity ranging from 4 GW/cm2 to 8.7 TW/cm2, pulse duration from 80 ps to 15 ns, and wavelengths of 528 or 1057 nm). The results presented compile data from three experimental campaigns spanning from 2018 to 2021 on two different laser platforms and using different pulse durations, energies, and wavelengths. The study is complemented by the simulation of the momentum from the mono-dimensional Lagrangian code ESTHER. The first part of this work gives a detailed description of the experimental setup used, the ESTHER code, and the treatment of the simulations. The second part focuses on the experimental results. The third part describes the simulation results and provides a comparison with the experimental data. The last part presents possible improvements for future work on the subject.
激光烧蚀推进和轨道清洁是正在发展的研究领域。应用于这一领域的激光技术的总体目标是最大限度地提高激光发射产生的动量传递。这项工作展示了在真空条件下对铝、铜、锡、金和多孔石墨目标进行弹道摆锤实验的结果。工作重点是激光实验的计量,以确保在广泛的激光参数(激光强度从 4 GW/cm2 到 8.7 TW/cm2,脉冲持续时间从 80 ps 到 15 ns,波长为 528 或 1057 nm)范围内保持良好的稳定性。研究结果汇编了从 2018 年到 2021 年在两个不同激光平台上进行的三次实验活动的数据,并使用了不同的脉冲持续时间、能量和波长。这项研究得到了单维拉格朗日代码ESTHER的动量模拟的补充。本研究的第一部分详细介绍了所使用的实验装置、ESTHER 代码和模拟处理方法。第二部分侧重于实验结果。第三部分介绍了模拟结果,并与实验数据进行了比较。最后一部分介绍了今后在这一课题上可能进行的改进。
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引用次数: 0
Predictions of thorium super nitrides and superconductivity under pressure: Ab initio calculations 压力下钍超氮化物和超导性的预测:Ab initio 计算
Pub Date : 2024-04-22 DOI: 10.1063/5.0206354
B. Sahoo, K. Joshi
Thorium nitrides have been the topic of intense studies due to their prospective applications as advanced nuclear fuels. The phase diagram of the Th–N scheme, however, continues unknown at low temperatures and extremely high pressures. In this article, we examine the Th–N system's phase diagram up to 300 GPa from the first-principle approach using universal structure predictor: evolutionary Xtallography (USPEX) method. Apart from the experimentally observed phase (ThN, Th2N3, and Th3N4), there are several unique chemical stoichiometries, i.e., ThN3, ThN4, ThN6, ThN8, ThN10, and ThN12 are found to have stability fields on the Th–N phase diagram at pressure of 3.0, 32, 100, 42, 28, and 236 GPa along with previously predicted composition ThN2 at 3.5 GPa. The structural stability of the predicted compositions is further assessed by evaluating the elastic and dynamic stability. Out of all above mentioned compositions, ThN3 is possibly a metastable one at 0 GPa. Electronic structure calculations predict that all newly discovered compositions are metallic except ThN10, which is semi-metallic at high pressures. Further, we predict that ThN4 and ThN6 have high electron–phonon coupling constant of 1.874 and 0.894 with Tc around 21.22 and 25.02 K, respectively, at 100 GPa.
由于钍氮化物有望用作先进的核燃料,因此一直是研究的热点。然而,Th-N 方案在低温和极高压下的相图仍然是未知的。在本文中,我们使用通用结构预测:进化 Xtallography(USPEX)方法,从第一原理的角度研究了 Th-N 系统在 300 GPa 以下的相图。除了实验观察到的相位(ThN、Th2N3 和 Th3N4)之外,我们还发现了几种独特的化学计量单位,即 ThN3、ThN4、ThN6、ThN8、ThN10 和 ThN12,它们在 3.0、32、100、42、28 和 236 GPa 压力下的 Th-N 相图上具有稳定场,以及之前预测的在 3.5 GPa 压力下的成分 ThN2。通过评估弹性和动态稳定性,进一步评估了预测成分的结构稳定性。在上述所有成分中,ThN3 可能是在 0 GPa 条件下的稳定成分。电子结构计算预测,除 ThN10 外,所有新发现的成分都是金属,ThN10 在高压下是半金属。此外,我们还预测 ThN4 和 ThN6 在 100 GPa 时的电子-声子耦合常数分别为 1.874 和 0.894,Tc 分别约为 21.22 和 25.02 K。
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引用次数: 0
Structural and dielectric features of (Bi0.5Na0.5)1−xBaxTiO3 lead-free ferroelectric ceramics: An approach to the phase diagram (Bi0.5Na0.5)1-xBaxTiO3无铅铁电陶瓷的结构和介电特性:相图方法
Pub Date : 2024-04-22 DOI: 10.1063/5.0191402
B. R. Moya, A. C. Iglesias-Jaime, A. C. Silva, A. Peláiz‐Barranco, J. D. S. Guerra
(Bi0.5Na0.5)1−xBaxTiO3 lead-free ferroelectric ceramics were synthesized via the conventional solid-state reaction method. Structural and dielectric properties were investigated as a function of the doping concentration, considering x = 0, 2, 5, 8, 10, 12, 16, and 18 at. % Ba. The structural analyses were carried out from the x-ray diffraction technique, including the Rietveld refinement method, and Raman spectroscopy. Results confirmed the formation of the perovskite structure, revealing different crystalline symmetries, depending on the Ba2+ concentration: the single rhombohedral ferroelectric phase (R3c) for x = 0 and 2 at. %; coexistence of both rhombohedral ferroelectric (R3c) and tetragonal antiferroelectric (P4bm) phases for x = 5 at. % Ba; the single tetragonal antiferroelectric phase (P4bm) for x = 8 at. % Ba; coexistence of two tetragonal phases (antiferroelectric P4bm and ferroelectric P4mm) for x = 10 at. % Ba; and the single tetragonal ferroelectric phase (P4mm) for x = 12, 16, and 18 at. % Ba. The characteristics of the phases’ transition, investigated from dielectric analysis, revealed the presence of two dielectric anomalies, which indeed have been associated to different phases’ transitions, one of them showing relaxor-like characteristics. The obtained results offer new insights for a better understanding on the features of the phase diagram for the studied ceramic system, according to the different observed crystalline symmetries (ferroelectric and antiferroelectric) in a very wide doping concentration. In the light of the obtained results, a new phase diagram has been proposed considering a wider compositional range than those reported in the literature.
通过传统的固态反应方法合成了 (Bi0.5Na0.5)1-xBaxTiO3 无铅铁电陶瓷。考虑到 x = 0、2、5、8、10、12、16 和 18 at.%的钡。通过 X 射线衍射技术(包括里特维尔德细化法)和拉曼光谱进行了结构分析。结果证实了包晶结构的形成,并揭示了不同的晶体对称性,这取决于 Ba2+ 的浓度:x = 0 和 2 at.%;x = 5 at.%的钡时,存在斜方铁电相(R3c)和四方反铁电相(P4bm);x = 8 at.%钡时的单一四方反铁电相(P4bm);x = 10 at.在 x = 12、16 和 18 at.%钡时的单一四方铁电相(P4mm)。通过介电分析研究这些相的转变特征,发现存在两种介电异常,它们确实与不同的相转变有关,其中一种显示出类似弛豫器的特征。根据所观察到的不同晶体对称性(铁电和反铁电),所获得的结果为更好地理解所研究陶瓷系统的相图特征提供了新的见解。根据所获得的结果,我们提出了一种新的相图,它考虑到了比文献报道更宽的成分范围。
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引用次数: 0
Large electrocaloric effect near room temperature induced by domain switching in ferroelectric nanocomposites 铁电纳米复合材料畴切换诱发的近室温大电致发光效应
Pub Date : 2024-04-22 DOI: 10.1063/5.0205338
Zeqing Yu, X. Hou, Sizheng Zheng, Chen Bin, Jieying Wang
The solid-state refrigeration technique based on the electrocaloric effect (ECE) of ferroelectric materials has been regarded as a promising alternative to vapor compression systems due to its advantages of high efficiency and easy miniaturization. However, the small adiabatic temperature change (ATC) and narrow operating temperature range of ferroelectric materials are key obstacles for their practical applications of ECE refrigeration. To improve the ECE performance of ferroelectric polymer poly(vinylidene fluoride) [P(VDF-TrFE)], PbZr1−xTixO3 (PZT) nanoparticles with larger polarization is herein introduced to form ferroelectric nanocomposites. The phase-field simulation is employed to investigate the dynamic hysteresis loops and corresponding domain evolution of the ferroelectric nanocomposites. The temperature-dependent ATC values are calculated using the indirect method based on the Maxwell relation. The appearance of the double hysteresis loop is observed in P(VDF-TrFE) nanocomposite filled with PbZr0.1Ti0.9O3 nanoparticles [P(VDF-TrFE)–PZT0.9], which is mainly caused by a microscopic domain transition from single domain to polar vortex. Compared to the P(VDF-TrFE), enhanced ATC values associated with the domain transition are unveiled in P(VDF-TrFE)–PZT0.9, and the temperature range of excellent ECE is also effectively broadened. In addition, as the component x of filled PZT nanoparticles increases to cross the morphotropic phase boundary (MPB), the maximum ATC value shows a significant increase. The results presented in this work not only explain the mechanism of domain transition induced excellent ECE in the P(VDF-TrFE)–PZT nanocomposite, but also stimulate future studies on enhancing ECE of P(VDF-TrFE) by introducing ferroelectric nanofillers.
基于铁电材料电积效应(ECE)的固态制冷技术具有效率高、易于微型化等优点,因此被视为蒸汽压缩系统的一种有前途的替代技术。然而,铁电材料的绝热温度变化(ATC)小和工作温度范围窄是其 ECE 制冷实际应用的主要障碍。为了提高铁电聚合物聚偏氟乙烯 [P(VDF-TrFE)] 的 ECE 性能,本文引入了极化度较大的 PbZr1-xTixO3 (PZT) 纳米粒子,形成铁电纳米复合材料。相场模拟用于研究铁电纳米复合材料的动态磁滞环和相应的畴演化。利用基于麦克斯韦关系的间接方法计算了随温度变化的 ATC 值。在填充了 PbZr0.1Ti0.9O3 纳米颗粒的 P(VDF-TrFE)纳米复合材料[P(VDF-TrFE)-PZT0.9]中观察到了双磁滞环的出现,这主要是由于微观畴由单畴转变为极性漩涡引起的。与 P(VDF-TrFE)相比,P(VDF-TrFE)-PZT0.9 中与畴转变相关的 ATC 值得到了增强,优异 ECE 的温度范围也得到了有效拓宽。此外,随着填充的 PZT 纳米粒子的分量 x 的增加以跨越各向形态相边界(MPB),最大 ATC 值也显著增加。本文的研究结果不仅解释了 P(VDF-TrFE)-PZT 纳米复合材料的畴转变诱导优异 ECE 的机理,而且对今后通过引入铁电纳米填料增强 P(VDF-TrFE)ECE 的研究具有启发意义。
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引用次数: 0
Tunable bandpass filters using a defective phononic crystal shunted to synthetic negative capacitance for longitudinal waves 利用缺陷声子晶体分流合成纵波负电容的可调谐带通滤波器
Pub Date : 2024-04-22 DOI: 10.1063/5.0203514
Soo-Ho Jo, Moonsu Park, Minseo Kim, Jeonggyu Yang
This study illustrates the successful achievement of tunable defect bands in one-dimensional defective phononic crystals (PnCs) through the incorporation of piezoelectric defects with synthetic negative capacitances (SNCs) for the first time. The efficacy of SNCs in creating tunable bandpass filters across a broad frequency range is thoroughly examined using the proposed analytical and numerical models. A newly developed electroelastically coupled transfer matrix that incorporates SNCs is presented, considering either series or parallel connection between bimorph piezoelectric elements. Defect band and transmittance analyses are conducted using the transfer matrix and S-parameter methods. Two key findings emerge from this investigation. First, when the total equivalent capacitance of the bimorph piezoelectric elements and SNC becomes zero, the defect band representing the point-symmetric defect-mode shape can be customized throughout the entire phononic bandgap. Second, the constant transmittance value, resembling short-circuit conditions, highlights the remarkable ability of SNCs to tune defect bands without energy dissipation, paving the way for fully tunable bandpass filters. To propel this research forward, future investigations could explore expanding the design space with double defects, adopting enhanced modeling techniques to account for lateral and shear effects, developing a control algorithm for the automatic optimization of SNC values in actively tunable bandpass filters, and incorporating artificial intelligence into design methods for piezoelectric defects with electrical connections.
本研究通过首次在一维缺陷声子晶体(PnCs)中加入具有合成负电容(SNCs)的压电缺陷,成功地实现了可调缺陷带。利用所提出的分析和数值模型,深入研究了 SNC 在创建宽频率范围可调带通滤波器方面的功效。考虑到双晶压电元件之间的串联或并联,提出了一种新开发的电弹性耦合传递矩阵,其中包含 SNC。利用传递矩阵和 S 参数方法对缺陷带和透射率进行了分析。这项研究得出了两个重要发现。首先,当双晶压电元件和 SNC 的总等效电容为零时,代表点对称缺陷模式形状的缺陷带可在整个声波带隙中定制。其次,恒定的透射率值类似于短路条件,凸显了 SNC 无需耗散能量即可调整缺陷带的卓越能力,为实现完全可调带通滤波器铺平了道路。为了推动这项研究向前发展,未来的研究可以探索扩大双缺陷的设计空间,采用增强的建模技术以考虑横向和剪切效应,开发一种控制算法以自动优化主动可调带通滤波器中的 SNC 值,以及将人工智能纳入具有电气连接的压电缺陷的设计方法。
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引用次数: 0
Domain reorientation due to smectic layer instability in high tilt angle-based surface stabilized ferroelectric liquid crystal cell 基于高倾角的表面稳定铁电液晶电池中的胶层不稳定性导致的晶域重新定向
Pub Date : 2024-04-15 DOI: 10.1063/5.0198434
Neha Yadav, Suraj Kumar, A. Choudhary, Anil K. Thakur, Rajesh, Surinder P. Singh, A. Biradar
High tilt angle (45°) ferroelectric liquid crystal (FLC) in surface stabilized geometry, having no chiral smectic A (SmA∗) phase, has been studied for the reorientation of the smectic layers near the transition temperature (Tc). The electro-optical studies have shown the stripe domain formation in which the liquid crystal molecules are aligned along the rubbing direction, but the smectic layers are tilted away from the rubbing direction at room temperature. In such high tilt angle FLCs, the molecular alignment and smectic layer formation start from bottom and top rubbed grooves at Tc. The domain formation of the FLC takes place in the middle of the top and bottom surfaces due to the frustration of the dipolar interaction. The smectic layer switching is observed by optical microscopy and confirmed by the dielectric spectroscopy method near Tc of SmC∗ and chiral nematic phases. Domain switching has shown a larger switching angle than the molecular tilt angle within the smectic layer. These studies are expected to be significant for understanding the smectic layer structure and the domain switching process, which may pave the way for large optical switching devices.
研究人员对表面稳定几何形状的高倾角(45°)铁电液晶(FLC)进行了研究,该液晶没有手性 Smectic A(SmA∗)相,在接近转变温度(Tc)时,smectic 层会重新定向。电光研究表明,在室温下,液晶分子沿摩擦方向排列,但共晶层偏离摩擦方向倾斜,从而形成条纹畴。在这种高倾斜角 FLC 中,分子排列和胶层形成是从 Tc 时的底部和顶部摩擦槽开始的。由于双极相互作用的挫折作用,FLC 的畴形成发生在顶部和底部表面的中间。通过光学显微镜观察到了 SmC∗ 和手性向列相的 Smectic 层切换,并在 Tc 附近通过介电光谱法得到了证实。在 Smectic 层内,畴切换显示出比分子倾斜角更大的切换角。这些研究预计将对理解晶格层结构和畴切换过程具有重要意义,从而为大型光学切换器件铺平道路。
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引用次数: 0
Estimating the lattice thermal conductivity of AlCoCrNiFe high-entropy alloy using machine learning 利用机器学习估算 AlCoCrNiFe 高熵合金的晶格热导率
Pub Date : 2024-04-03 DOI: 10.1063/5.0201042
Jie Lu, Xiaona Huang, Y. Yue
The lattice thermal conductivity stands as a pivotal thermos-physical parameter of high-entropy alloys; nonetheless, achieving precise predictions of the lattice thermal conductivity for high-entropy alloys poses a formidable challenge due to their complex composition and structure. In this study, machine learning models were built to predict the lattice thermal conductivity of AlCoCrNiFe high-entropy alloy based on molecular dynamic simulations. Our model shows high accuracy with R2, mean absolute percentage error, and root mean square error of the test set is 0.91, 0.031, and 1.128 W m−1 k−1, respectively. In addition, a high-entropy alloy with low a lattice thermal conductivity of 2.06 W m−1 k−1 (Al8Cr30Co19Ni20Fe23) and with a high lattice thermal conductivity of 5.29 W m−1 k−1 (Al0.5Cr28.5Co25Ni25.5Fe20.5) was successfully predicted, which shows good agreement with the results from molecular dynamics simulations. The mechanisms of the thermal conductivity divergence are further explained through their phonon density of states and elastic modulus. The established model provides a powerful tool for developing high-entropy alloys with the desired properties.
晶格热导率是高熵合金的一个关键热物理参数;然而,由于高熵合金的成分和结构复杂,要精确预测其晶格热导率是一项艰巨的挑战。本研究基于分子动力学模拟,建立了机器学习模型来预测 AlCoCrNiFe 高熵合金的晶格热导率。我们的模型具有很高的准确性,测试集的 R2、平均绝对百分比误差和均方根误差分别为 0.91、0.031 和 1.128 W m-1 k-1。此外,还成功预测了低晶格热导率为 2.06 W m-1 k-1 (Al8Cr30Co19Ni20Fe23)和高晶格热导率为 5.29 W m-1 k-1 (Al0.5Cr28.5Co25Ni25.5Fe20.5)的高熵合金,这与分子动力学模拟的结果显示出良好的一致性。通过声子态密度和弹性模量,进一步解释了热导率差异的机理。所建立的模型为开发具有所需性能的高熵合金提供了强有力的工具。
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引用次数: 0
Analytical model of a nanowire-based betavoltaic device 基于纳米线的光伏器件分析模型
Pub Date : 2024-04-03 DOI: 10.1063/5.0202949
Amanda Thomas, R. LaPierre
An analytical device physics model is presented for determining the energy conversion efficiency of semiconductor nanowire array-based radial (core–shell) p-i-n junction betavoltaic cells for two- and three-dimensional radioisotope source geometries. Optimum short-circuit current density Jsc, open-circuit voltage Voc, fill factor FF, and energy conversion efficiency η are determined for various nanowire properties, including dopant concentration, nanowire length, core diameter, and shell thickness, for Si, GaAs, and GaP material systems. A maximum efficiency of 8.05% was obtained for GaP nanowires with diameter 200nm (p-core diameter, i-shell, and n-shell thicknesses of 24, 29.4, and 58.6 nm, respectively), length 10μm, acceptor and donor concentrations of 1019 and 5×1018cm−3, respectively, and a 3D source geometry.
本文提出了一个分析器件物理模型,用于确定基于半导体纳米线阵列的径向(核壳)p-i-n 结光伏电池的能量转换效率,适用于二维和三维放射性同位素源几何结构。针对硅、砷化镓和磷化镓材料系统的各种纳米线特性(包括掺杂浓度、纳米线长度、芯直径和壳厚度),确定了最佳短路电流密度 Jsc、开路电压 Voc、填充因子 FF 和能量转换效率 η。直径为 200nm 的 GaP 纳米线(p-核直径、i-壳和 n-壳厚度分别为 24、29.4 和 58.6 nm)、长度为 10μm、受体和供体浓度分别为 1019 和 5×1018cm-3 以及三维源几何形状的最高效率为 8.05%。
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引用次数: 0
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Journal of Applied Physics
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