Raman Kumar, Robert B. Kaufman, F. Hsiao, J. Leburton, J. Dallesasse
Bistability in the current–voltage characteristics of semiconductor superlattices and quantum cascade laser structures has the potential for wide-ranging applications, particularly in sensing systems. However, the interdependency of applied bias and current injection in conventional two-terminal structures has led to complications in analysis and rendered the bistability phenomenon difficult to implement in practical applications. Here, we report a new kind of electronic bistability coupled to optical switching in a resonant tunneling bipolar superlattice transistor. This bistability manifests as sharp discontinuities in the collector current with extremely small variations of the applied voltage, which arise from unstable tunneling transmission across the hetero-barrier between the two-dimensional electron gas (2DEG) at the edge of the transistor base and the collector superlattice structure. The electronic transitions between high and low quantum mechanical transmissions are demonstrated to be caused by self-consistent variations of the internal electric field at the heterointerface between the 2DEG and the superlattice. They are also present in the base current of the three-terminal device and result in sharp switching of near-infrared spontaneous light emission output from an interband radiative recombination process with a peak emission wavelength of 1.58 μm. A comprehensive quantum mechanical theoretical model accounting for the self-consistent bistable tunneling transmission is in quantitative agreement with the experimental data. The measured peak transconductance sensitivity value of 6000 mS can be used in the highly sensitive detector and non-linear device applications.
{"title":"Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor","authors":"Raman Kumar, Robert B. Kaufman, F. Hsiao, J. Leburton, J. Dallesasse","doi":"10.1063/5.0190385","DOIUrl":"https://doi.org/10.1063/5.0190385","url":null,"abstract":"Bistability in the current–voltage characteristics of semiconductor superlattices and quantum cascade laser structures has the potential for wide-ranging applications, particularly in sensing systems. However, the interdependency of applied bias and current injection in conventional two-terminal structures has led to complications in analysis and rendered the bistability phenomenon difficult to implement in practical applications. Here, we report a new kind of electronic bistability coupled to optical switching in a resonant tunneling bipolar superlattice transistor. This bistability manifests as sharp discontinuities in the collector current with extremely small variations of the applied voltage, which arise from unstable tunneling transmission across the hetero-barrier between the two-dimensional electron gas (2DEG) at the edge of the transistor base and the collector superlattice structure. The electronic transitions between high and low quantum mechanical transmissions are demonstrated to be caused by self-consistent variations of the internal electric field at the heterointerface between the 2DEG and the superlattice. They are also present in the base current of the three-terminal device and result in sharp switching of near-infrared spontaneous light emission output from an interband radiative recombination process with a peak emission wavelength of 1.58 μm. A comprehensive quantum mechanical theoretical model accounting for the self-consistent bistable tunneling transmission is in quantitative agreement with the experimental data. The measured peak transconductance sensitivity value of 6000 mS can be used in the highly sensitive detector and non-linear device applications.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140661996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Y. Polyakov, E. B. Yakimov, D. S. Saranin, A. Chernykh, Anton Vasilev, P. Gostishchev, A. I. Kochkova, L. Alexanyan, N. Matros, I. Shchemerov, S. Pearton
We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In HJs, in contrast to Schottky diodes, the capacitance and AC conductance show a prominent frequency and temperature dependence, suggesting the presence of two temperature activation processes with activation energies of 0.17 and 0.1 eV. The deep trap spectra of the Schottky diodes and HJs differ by the absence in the HJ of deep electron traps E2* with level near Ec − 0.7 eV considered to be an important center of non-radiative recombination. This correlates with the observed increase in the diffusion length of non-equilibrium charge carriers in the HJs to 370 nm compared to 240 nm in the Schottky diodes. The diffusion length of charge carriers in p-NiO was found to be quite short, 30 nm. Possible reasons for the observed differences and possible origin of the minority-trap-like feature commonly reported to be present in the deep level spectra of HJs and also observed in our experiments are discussed.
{"title":"Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions","authors":"A. Y. Polyakov, E. B. Yakimov, D. S. Saranin, A. Chernykh, Anton Vasilev, P. Gostishchev, A. I. Kochkova, L. Alexanyan, N. Matros, I. Shchemerov, S. Pearton","doi":"10.1063/5.0203526","DOIUrl":"https://doi.org/10.1063/5.0203526","url":null,"abstract":"We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In HJs, in contrast to Schottky diodes, the capacitance and AC conductance show a prominent frequency and temperature dependence, suggesting the presence of two temperature activation processes with activation energies of 0.17 and 0.1 eV. The deep trap spectra of the Schottky diodes and HJs differ by the absence in the HJ of deep electron traps E2* with level near Ec − 0.7 eV considered to be an important center of non-radiative recombination. This correlates with the observed increase in the diffusion length of non-equilibrium charge carriers in the HJs to 370 nm compared to 240 nm in the Schottky diodes. The diffusion length of charge carriers in p-NiO was found to be quite short, 30 nm. Possible reasons for the observed differences and possible origin of the minority-trap-like feature commonly reported to be present in the deep level spectra of HJs and also observed in our experiments are discussed.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140659169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aoming Ge, Ziying Pan, Shaobo Liu, Yiliang Lv, Tao Peng
Single-turn coil (STC) is a destructive pulse magnet aiming at a 100–300 T ultra-high magnetic field. A transient discharge circuit model considering the coupling of electromagnetic diffusion and conductor deformation is proposed, and the transient coil impedance characteristics are investigated. The results show that the coil resistance first decreases and then increases due to electromagnetic diffusion and temperature rise, respectively, while the coil inductance always increases because of the conductor’s outward motion. By comparison, the simulation results are consistent with the experimental data, and the correctness of the model is validated.
单匝线圈（STC）是一种以 100-300 T 超高磁场为目标的破坏性脉冲磁体。提出了一个考虑电磁扩散和导体变形耦合的瞬态放电电路模型，并研究了线圈的瞬态阻抗特性。结果表明，由于电磁扩散和温度上升，线圈电阻分别先减小后增大，而由于导体向外运动，线圈电感始终增大。通过比较，仿真结果与实验数据一致，验证了模型的正确性。
{"title":"The transient discharge circuit analysis of single-turn coil","authors":"Aoming Ge, Ziying Pan, Shaobo Liu, Yiliang Lv, Tao Peng","doi":"10.1063/5.0204003","DOIUrl":"https://doi.org/10.1063/5.0204003","url":null,"abstract":"Single-turn coil (STC) is a destructive pulse magnet aiming at a 100–300 T ultra-high magnetic field. A transient discharge circuit model considering the coupling of electromagnetic diffusion and conductor deformation is proposed, and the transient coil impedance characteristics are investigated. The results show that the coil resistance first decreases and then increases due to electromagnetic diffusion and temperature rise, respectively, while the coil inductance always increases because of the conductor’s outward motion. By comparison, the simulation results are consistent with the experimental data, and the correctness of the model is validated.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140660979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Berger, Michael Schneider, G. Pfusterschmied, Ulrich Schmid
The 5th generation (5G) wireless telecommunication standards with newly defined frequency bands up to 6 GHz are currently established around the world. While outperforming surface acoustic wave (SAW) filters above 1 GHz, bulk acoustic wave (BAW) resonators in multiplexers for radio-frequency front-end (RFFE) modules continuously face higher performance requirements. In contrast to free-standing bulk acoustic resonators (FBARs), solidly mounted resonator (SMR) technology uses an acoustic Bragg mirror, which has already been successfully applied for several GHz applications. In this work, we investigate the potential of amorphous hydrogenated silicon-oxycarbonitride (a-SiOCN:H) thin films synthesized with low-temperature plasma-enhanced chemical vapor deposition (PECVD) as a low acoustic impedance (low-Z) material. Compared to the state-of-the-art where in Bragg mirrors up to now SiO2 is used as standard, the acoustic impedance ratio against the high-Z material tungsten (W) is enhanced for a better device performance. To limit the expected increase in viscous loss when the acoustic impedance is reduced, to a minimum, predominantly the mass density was reduced while keeping the mechanical elasticity high. By doing so, acoustic impedance values as low as 7.1 MRayl were achieved, thereby increasing the impedance ratio of high-Z to low-Z materials from 8:1 up to 14:1.
{"title":"Plasma-enhanced chemical vapor deposition a-SiOCN:H low-Z thin films for bulk acoustic wave resonators","authors":"C. Berger, Michael Schneider, G. Pfusterschmied, Ulrich Schmid","doi":"10.1063/5.0197261","DOIUrl":"https://doi.org/10.1063/5.0197261","url":null,"abstract":"The 5th generation (5G) wireless telecommunication standards with newly defined frequency bands up to 6 GHz are currently established around the world. While outperforming surface acoustic wave (SAW) filters above 1 GHz, bulk acoustic wave (BAW) resonators in multiplexers for radio-frequency front-end (RFFE) modules continuously face higher performance requirements. In contrast to free-standing bulk acoustic resonators (FBARs), solidly mounted resonator (SMR) technology uses an acoustic Bragg mirror, which has already been successfully applied for several GHz applications. In this work, we investigate the potential of amorphous hydrogenated silicon-oxycarbonitride (a-SiOCN:H) thin films synthesized with low-temperature plasma-enhanced chemical vapor deposition (PECVD) as a low acoustic impedance (low-Z) material. Compared to the state-of-the-art where in Bragg mirrors up to now SiO2 is used as standard, the acoustic impedance ratio against the high-Z material tungsten (W) is enhanced for a better device performance. To limit the expected increase in viscous loss when the acoustic impedance is reduced, to a minimum, predominantly the mass density was reduced while keeping the mechanical elasticity high. By doing so, acoustic impedance values as low as 7.1 MRayl were achieved, thereby increasing the impedance ratio of high-Z to low-Z materials from 8:1 up to 14:1.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140659479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents the design of a single-phase solid phononic crystal (PnC) structure featuring a regular hexagonal perforation pattern. The structure manifests three negative refraction bands, encompassing one for transverse waves and two for longitudinal waves, thereby enabling simultaneous control of shear and longitudinal waves. Due to the high symmetry of the triangular lattice, the equal frequency curves corresponding to the negative refraction band approach circular shapes, suggesting a nearly isotropic negative refraction effect. This negative refraction effect is achieved through specific mass resonance modes closely related to the porous structure designed in this paper. Initially, we analyze the band structure of the PnC, followed by designing the PnC plate structure to achieve negative refraction control for transverse waves at a frequency of 32.4 kHz, with a negative refraction index of −1. Additionally, negative refraction control for longitudinal waves is attained at frequencies of 44 and 64.54 kHz. Subsequently, we scrutinize the influence of various conditions on negative refraction, including different structural parameters, incident angles, and operating frequencies, while verifying the robustness of the designed phonon crystal structure. Leveraging the negative refraction characteristics of the structure, we construct an elastic wave lens to achieve perfect imaging of shear and longitudinal waves. Finally, employing finite element simulation and analyzing focusing imaging characteristics with different source positions, we validate that the results closely align with theoretical expectations. The solid PnC structure designed in this study holds significant potential for applications in the fields of elastic wave imaging.
{"title":"Negative elastic wave refraction and focusing regulation of single-phase solid phononic crystals","authors":"Fei-Yu Liu, Fa-Jie Wang, Sheng-Dong Zhao","doi":"10.1063/5.0202548","DOIUrl":"https://doi.org/10.1063/5.0202548","url":null,"abstract":"This paper presents the design of a single-phase solid phononic crystal (PnC) structure featuring a regular hexagonal perforation pattern. The structure manifests three negative refraction bands, encompassing one for transverse waves and two for longitudinal waves, thereby enabling simultaneous control of shear and longitudinal waves. Due to the high symmetry of the triangular lattice, the equal frequency curves corresponding to the negative refraction band approach circular shapes, suggesting a nearly isotropic negative refraction effect. This negative refraction effect is achieved through specific mass resonance modes closely related to the porous structure designed in this paper. Initially, we analyze the band structure of the PnC, followed by designing the PnC plate structure to achieve negative refraction control for transverse waves at a frequency of 32.4 kHz, with a negative refraction index of −1. Additionally, negative refraction control for longitudinal waves is attained at frequencies of 44 and 64.54 kHz. Subsequently, we scrutinize the influence of various conditions on negative refraction, including different structural parameters, incident angles, and operating frequencies, while verifying the robustness of the designed phonon crystal structure. Leveraging the negative refraction characteristics of the structure, we construct an elastic wave lens to achieve perfect imaging of shear and longitudinal waves. Finally, employing finite element simulation and analyzing focusing imaging characteristics with different source positions, we validate that the results closely align with theoretical expectations. The solid PnC structure designed in this study holds significant potential for applications in the fields of elastic wave imaging.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140661688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hongming Liang, Kuo Li, Mingyang Xu, Yao Zhang, Peiqiao Liu, Sizhe Wang, Zhiwen Sun, Ruizhi Yang, Guanghua Yu, Minghua Li
Alloying heavy metals (HMs) has been an effective method for enhancing the efficiency of spin–orbit torque. In this study, we demonstrate that Pt100−xWx/Pt/Co/Ta multilayers still maintain perpendicular magnetic anisotropy after high-temperature annealing. Doping tungsten (W) into HM platinum (Pt) at the bottom of a Pt/Co/Ta multilayer significantly increases the spin Hall angle (θSH) and reduces the critical switching current density (Jc). The harmonic Hall test results show that the θSH of the Pt88W12 alloy film is approximately 0.29, which is higher than that of the pure Pt film (0.15). The magnetization switching test reveals that the Jc of Pt94W6 alloy film is approximately 4.892 × 106 A/cm2, which is 51.9% lower than that of the pure Pt film. This study offers a valuable method for reducing power consumption and enhancing the efficiency of related application devices.
{"title":"Enhancement of spin–orbit torque and magnetization switching by Pt100–xWx alloy in Co-based films","authors":"Hongming Liang, Kuo Li, Mingyang Xu, Yao Zhang, Peiqiao Liu, Sizhe Wang, Zhiwen Sun, Ruizhi Yang, Guanghua Yu, Minghua Li","doi":"10.1063/5.0196543","DOIUrl":"https://doi.org/10.1063/5.0196543","url":null,"abstract":"Alloying heavy metals (HMs) has been an effective method for enhancing the efficiency of spin–orbit torque. In this study, we demonstrate that Pt100−xWx/Pt/Co/Ta multilayers still maintain perpendicular magnetic anisotropy after high-temperature annealing. Doping tungsten (W) into HM platinum (Pt) at the bottom of a Pt/Co/Ta multilayer significantly increases the spin Hall angle (θSH) and reduces the critical switching current density (Jc). The harmonic Hall test results show that the θSH of the Pt88W12 alloy film is approximately 0.29, which is higher than that of the pure Pt film (0.15). The magnetization switching test reveals that the Jc of Pt94W6 alloy film is approximately 4.892 × 106 A/cm2, which is 51.9% lower than that of the pure Pt film. This study offers a valuable method for reducing power consumption and enhancing the efficiency of related application devices.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140659271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Erratum: “Dielectric conductivity and microwave heating behavior of NiO at high temperature” [J. Appl. Phys. 135, 065101 (2024)]","authors":"Noboru Yoshikawa, Haruto Sato","doi":"10.1063/5.0203465","DOIUrl":"https://doi.org/10.1063/5.0203465","url":null,"abstract":"","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140664018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the studies of the vulnerability of armored vehicles, the impact of high-velocity penetrators on liquid-filled container components is one of the critical concerns. The purpose of this study is to investigate the structural damage of the liquid-filled container subjected to shaped charge jet impact utilizing the Structural Arbitrary Lagrangian–Eulerian method in ANSYS/LS-DYNA. The numerical model is validated against available experimental data. The validation effort of the numerical model showed very good agreements with experiments in terms of radial shock wave and radial crater formation as a function of time. Using the validated model, the liquid pressure, the energy transfer as well as the influence of overmatch on the impact process were analyzed. The results indicate that the structural damage modes of containers under shaped charge jet impact include perforation and wall deformation. Perforation results from the penetration of the jet tip and tail, while wall deformation is caused by the high-velocity impact of the flowing liquid. In cases where the overmatch (OM) is equal to 1, the contribution of the tip to front and back wall perforation increment primarily depends on the impact velocity. In cases with OM less than 1, the “filtering effect” of the Rolled Homogeneous Armor (RHA) armor plate leads to the loss of the tail's contribution to front wall perforation.
{"title":"Numerical study on the damage of liquid-filled containers subjected to shaped charge jet impact","authors":"Shixin Ma, Xiangdong Li","doi":"10.1063/5.0196346","DOIUrl":"https://doi.org/10.1063/5.0196346","url":null,"abstract":"In the studies of the vulnerability of armored vehicles, the impact of high-velocity penetrators on liquid-filled container components is one of the critical concerns. The purpose of this study is to investigate the structural damage of the liquid-filled container subjected to shaped charge jet impact utilizing the Structural Arbitrary Lagrangian–Eulerian method in ANSYS/LS-DYNA. The numerical model is validated against available experimental data. The validation effort of the numerical model showed very good agreements with experiments in terms of radial shock wave and radial crater formation as a function of time. Using the validated model, the liquid pressure, the energy transfer as well as the influence of overmatch on the impact process were analyzed. The results indicate that the structural damage modes of containers under shaped charge jet impact include perforation and wall deformation. Perforation results from the penetration of the jet tip and tail, while wall deformation is caused by the high-velocity impact of the flowing liquid. In cases where the overmatch (OM) is equal to 1, the contribution of the tip to front and back wall perforation increment primarily depends on the impact velocity. In cases with OM less than 1, the “filtering effect” of the Rolled Homogeneous Armor (RHA) armor plate leads to the loss of the tail's contribution to front wall perforation.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140666259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Gorman, D. McGonegle, R. F. Smith, S. Singh, T. Jenkins, R. McWilliams, B. Albertazzi, S. Ali, L. Antonelli, M. R. Armstrong, C. Baehtz, O. B. Ball, S. Banerjee, A. B. Belonoshko, A. Benuzzi-Mounaix, C. Bolme, V. Bouffetier, R. Briggs, K. Buakor, T. Butcher, S. Di Dio Cafiso, V. Cerantola, J. Chantel, A. Di Cicco, S. Clarke, A. L. Coleman, J. Collier, G. Collins, A. Comley, F. Coppari, T. Cowan, G. Cristoforetti, H. Cynn, A. Descamps, F. Dorchies, M. J. Duff, A. Dwivedi, C. Edwards, J. H. Eggert, D. Errandonea, G. Fiquet, E. Galtier, A. Laso Garcia, H. Ginestet, L. Gizzi, A. Gleason, S. Goede, J. M. Gonzalez, M. Harmand, N. Hartley, P. Heighway, C. Hernandez-Gomez, A. Higginbotham, H. Höppner, R. J. Husband, T. Hutchinson, H. Hwang, A. Lazicki, D. A. Keen, J. Kim, P. Koester, Z. Konopkova, D. Kraus, A. Krygier, L. Labate, Y. Lee, H. Liermann, P. Mason, M. Masruri, B. Massani, E. McBride, C. McGuire, J. D. McHardy, S. Merkel, G. Morard, B. Nagler, M. Nakatsutsumi, K. Nguyen-Cong, A.-M. Norton, I. I. Ole
X-ray free electron laser (XFEL) sources coupled to high-power laser systems offer an avenue to study the structural dynamics of materials at extreme pressures and temperatures. The recent commissioning of the DiPOLE 100-X laser on the high energy density (HED) instrument at the European XFEL represents the state-of-the-art in combining x-ray diffraction with laser compression, allowing for compressed materials to be probed in unprecedented detail. Here, we report quantitative structural measurements of molten Sn compressed to 85(5) GPa and ∼3500 K. The capabilities of the HED instrument enable liquid density measurements with an uncertainty of ∼1% at conditions which are extremely challenging to reach via static compression methods. We discuss best practices for conducting liquid diffraction dynamic compression experiments and the necessary intensity corrections which allow for accurate quantitative analysis. We also provide a polyimide ablation pressure vs input laser energy for the DiPOLE 100-X drive laser which will serve future users of the HED instrument.
与高功率激光系统耦合的 X 射线自由电子激光（XFEL）源为研究极端压力和温度下的材料结构动态提供了一个途径。最近，欧洲 XFEL 高能量密度（HED）仪器上的 DiPOLE 100-X 激光器投入使用，代表了 X 射线衍射与激光压缩相结合的最先进技术，可以对压缩材料进行前所未有的详细探测。在此，我们报告了对压缩到 85(5) GPa 和 ∼3500 K 的熔融 Sn 的定量结构测量结果。HED 仪器的功能使液体密度测量的不确定性达到了 ∼1%，而这种条件是通过静态压缩方法极难达到的。我们讨论了进行液体衍射动态压缩实验的最佳实践，以及进行精确定量分析所需的强度修正。我们还提供了 DiPOLE 100-X 驱动激光器的聚酰亚胺烧蚀压力与输入激光能量的对比，这将为 HED 仪器的未来用户提供服务。
{"title":"Shock compression experiments using the DiPOLE 100-X laser on the high energy density instrument at the European x-ray free electron laser: Quantitative structural analysis of liquid Sn","authors":"M. Gorman, D. McGonegle, R. F. Smith, S. Singh, T. Jenkins, R. McWilliams, B. Albertazzi, S. Ali, L. Antonelli, M. R. Armstrong, C. Baehtz, O. B. Ball, S. Banerjee, A. B. Belonoshko, A. Benuzzi-Mounaix, C. Bolme, V. Bouffetier, R. Briggs, K. Buakor, T. Butcher, S. Di Dio Cafiso, V. Cerantola, J. Chantel, A. Di Cicco, S. Clarke, A. L. Coleman, J. Collier, G. Collins, A. Comley, F. Coppari, T. Cowan, G. Cristoforetti, H. Cynn, A. Descamps, F. Dorchies, M. J. Duff, A. Dwivedi, C. Edwards, J. H. Eggert, D. Errandonea, G. Fiquet, E. Galtier, A. Laso Garcia, H. Ginestet, L. Gizzi, A. Gleason, S. Goede, J. M. Gonzalez, M. Harmand, N. Hartley, P. Heighway, C. Hernandez-Gomez, A. Higginbotham, H. Höppner, R. J. Husband, T. Hutchinson, H. Hwang, A. Lazicki, D. A. Keen, J. Kim, P. Koester, Z. Konopkova, D. Kraus, A. Krygier, L. Labate, Y. Lee, H. Liermann, P. Mason, M. Masruri, B. Massani, E. McBride, C. McGuire, J. D. McHardy, S. Merkel, G. Morard, B. Nagler, M. Nakatsutsumi, K. Nguyen-Cong, A.-M. Norton, I. I. Ole","doi":"10.1063/5.0201702","DOIUrl":"https://doi.org/10.1063/5.0201702","url":null,"abstract":"X-ray free electron laser (XFEL) sources coupled to high-power laser systems offer an avenue to study the structural dynamics of materials at extreme pressures and temperatures. The recent commissioning of the DiPOLE 100-X laser on the high energy density (HED) instrument at the European XFEL represents the state-of-the-art in combining x-ray diffraction with laser compression, allowing for compressed materials to be probed in unprecedented detail. Here, we report quantitative structural measurements of molten Sn compressed to 85(5) GPa and ∼3500 K. The capabilities of the HED instrument enable liquid density measurements with an uncertainty of ∼1% at conditions which are extremely challenging to reach via static compression methods. We discuss best practices for conducting liquid diffraction dynamic compression experiments and the necessary intensity corrections which allow for accurate quantitative analysis. We also provide a polyimide ablation pressure vs input laser energy for the DiPOLE 100-X drive laser which will serve future users of the HED instrument.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140671987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Grain boundary (GB) segregation models are derived for multi-principal element alloys (MPEAs) and high-entropy alloys (HEAs). Differing from classical models where one component is taken as a solvent and others are considered solutes, these models are referenced to the bulk composition to enable improved treatments of MPEAs and HEAs with no principal components. An ideal solution model is first formulated and solved to obtain analytical expressions that predict GB segregation and GB energy in MPEAs and HEAs. A regular solution model is further derived. The GB composition calculated using the simple analytical expression derived in this study and data from the Materials Project agrees well with a prior atomistic simulation for NbMoTaW. The simplicity of the derived analytical expressions makes them useful for not only conveniently predicting GB segregation trends in HEAs but also analyzing nascent interfacial phenomena in compositionally complex GBs. As an application example, the models are used to further derive a set of equations to elucidate an emergent concept of high-entropy grain boundaries.
针对多主元素合金（MPEAs）和高熵合金（HEAs）推导出了晶界（GB）偏析模型。与将一种成分作为溶剂而将其他成分视为溶质的经典模型不同，这些模型参考了体成分，从而改进了对无主成分的 MPEA 和 HEA 的处理。首先制定并求解了一个理想溶液模型，从而获得了预测 MPEA 和 HEA 中 GB 偏析和 GB 能量的分析表达式。然后进一步推导出常规求解模型。使用本研究得出的简单分析表达式和材料项目的数据计算出的 GB 成分与之前对 NbMoTaW 的原子模拟结果非常吻合。推导出的分析表达式非常简单，不仅可以方便地预测 HEA 中的 GB 偏析趋势，还可以分析成分复杂的 GB 中的新生界面现象。作为一个应用实例，这些模型被用来进一步推导一组方程，以阐明高熵晶界的新概念。
{"title":"Grain boundary segregation models for high-entropy alloys: Theoretical formulation and application to elucidate high-entropy grain boundaries","authors":"Jian Luo","doi":"10.1063/5.0200669","DOIUrl":"https://doi.org/10.1063/5.0200669","url":null,"abstract":"Grain boundary (GB) segregation models are derived for multi-principal element alloys (MPEAs) and high-entropy alloys (HEAs). Differing from classical models where one component is taken as a solvent and others are considered solutes, these models are referenced to the bulk composition to enable improved treatments of MPEAs and HEAs with no principal components. An ideal solution model is first formulated and solved to obtain analytical expressions that predict GB segregation and GB energy in MPEAs and HEAs. A regular solution model is further derived. The GB composition calculated using the simple analytical expression derived in this study and data from the Materials Project agrees well with a prior atomistic simulation for NbMoTaW. The simplicity of the derived analytical expressions makes them useful for not only conveniently predicting GB segregation trends in HEAs but also analyzing nascent interfacial phenomena in compositionally complex GBs. As an application example, the models are used to further derive a set of equations to elucidate an emergent concept of high-entropy grain boundaries.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140668777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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