Pub Date : 2024-03-06DOI: 10.35848/1882-0786/ad308b
Shoei Endo, S. Suzuki
We proposed and fabricated a terahertz resonant-tunneling-diode (RTD) oscillator integrated with two offset slot-ring antennas for high-output power and high-directivity radiation. In this device, the length of the antenna, approximately half the wavelength of the oscillation frequency, enables efficient terahertz radiation. The increased radiation conductance, resulting from the offset and the two slot-ring antennas, enables higher output power. Additionally, radiation directivity can be improved using two slot-ring antennas. The fabricated device generated high-power oscillation of 1.29 mW at 412 GHz. This is the highest output power of a single electronic device oscillator in the 400 GHz range.
{"title":"Terahertz resonant-tunneling-diode oscillator with two offset-fed slot-ring antennas","authors":"Shoei Endo, S. Suzuki","doi":"10.35848/1882-0786/ad308b","DOIUrl":"https://doi.org/10.35848/1882-0786/ad308b","url":null,"abstract":"\u0000 We proposed and fabricated a terahertz resonant-tunneling-diode (RTD) oscillator integrated with two offset slot-ring antennas for high-output power and high-directivity radiation. In this device, the length of the antenna, approximately half the wavelength of the oscillation frequency, enables efficient terahertz radiation. The increased radiation conductance, resulting from the offset and the two slot-ring antennas, enables higher output power. Additionally, radiation directivity can be improved using two slot-ring antennas. The fabricated device generated high-power oscillation of 1.29 mW at 412 GHz. This is the highest output power of a single electronic device oscillator in the 400 GHz range.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"55 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140261638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nociceptive receptors primarily responsible for responding to potentially harmful stimuli. We designed Pt/Ag/NbOx/W memristors with threshold switching (TS) characteristic and low working voltage attribute to the diffusion of Ag ions within the device. Furthermore, this device emulates the functions of a leaky integrate-and-fire (LIF) neuron and nervous pain perception functions, respectively. The artificial neurons exhibit neural functions, including leaky integration, threshold-driven firing , self-relaxation characteristics, and allodynia, hyperalgesia of the nociceptor. The proposed threshold-switching memristor shows potential in the field of neuromorphic computing and creating intelligent systems that can replicate the complexity of the human brain.
{"title":"Realization of nociceptive receptors based on Mott memristors","authors":"Yanji Wang, Yu Wang, Yanzhong Zhang, Xinpeng Wang, Hao Zhang, Rongqing Xu, Yi Tong","doi":"10.35848/1882-0786/ad1fa7","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1fa7","url":null,"abstract":"\u0000 Nociceptive receptors primarily responsible for responding to potentially harmful stimuli. We designed Pt/Ag/NbOx/W memristors with threshold switching (TS) characteristic and low working voltage attribute to the diffusion of Ag ions within the device. Furthermore, this device emulates the functions of a leaky integrate-and-fire (LIF) neuron and nervous pain perception functions, respectively. The artificial neurons exhibit neural functions, including leaky integration, threshold-driven firing , self-relaxation characteristics, and allodynia, hyperalgesia of the nociceptor. The proposed threshold-switching memristor shows potential in the field of neuromorphic computing and creating intelligent systems that can replicate the complexity of the human brain.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"17 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139527344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-11DOI: 10.35848/1882-0786/ad1db5
Masaya Yamada, Yasunori Takeda, S. Tokito, Hiroyuki Matsui
Applications of organic thin-film transistors (OTFTs) include wearable health monitors and next-generation internet-of-things (IoT) systems driven by small power supply of energy-harvesting. Such application requires low voltage and low power consumption organic integrated circuits. In this paper, we demonstrate complementary integrated circuits based on printed p-type and n-type OTFTs operatable at an ultralow supply voltage of 200 mV. For that purpose, threshold voltages were finely tuned by dual-gate structure and self-assembled monolayer. Complementary inverter-based ring oscillators operated at small supply voltages down to 200 mV and exhibited a power consumption as small as 6 pW per stage.
有机薄膜晶体管（OTFT）的应用包括可穿戴健康监测器和由能量收集小功率电源驱动的下一代物联网（IoT）系统。此类应用需要低电压、低功耗的有机集成电路。本文展示了基于印刷 p 型和 n 型 OTFT 的互补集成电路，可在 200 mV 超低电源电压下工作。为此，我们通过双栅极结构和自组装单层对阈值电压进行了微调。基于互补逆变器的环形振荡器可在低至 200 mV 的小电源电压下工作，每级功耗低至 6 pW。
{"title":"Printed organic transistors and complementary ring oscillators operatable at 200 mV","authors":"Masaya Yamada, Yasunori Takeda, S. Tokito, Hiroyuki Matsui","doi":"10.35848/1882-0786/ad1db5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1db5","url":null,"abstract":"\u0000 Applications of organic thin-film transistors (OTFTs) include wearable health monitors and next-generation internet-of-things (IoT) systems driven by small power supply of energy-harvesting. Such application requires low voltage and low power consumption organic integrated circuits. In this paper, we demonstrate complementary integrated circuits based on printed p-type and n-type OTFTs operatable at an ultralow supply voltage of 200 mV. For that purpose, threshold voltages were finely tuned by dual-gate structure and self-assembled monolayer. Complementary inverter-based ring oscillators operated at small supply voltages down to 200 mV and exhibited a power consumption as small as 6 pW per stage.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"41 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139533838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-05DOI: 10.35848/1882-0786/ad1bc4
Tetsuya Kubota, Sotatsu Yanagimoto, Hikaru Saito, Keiichirou Akiba, A. Ishii, T. Sannomiya
Highly efficient green emission of Cs4PbBr6 has been attributed to intermediate states formed by embedded CsPbBr3 nanocrystals or defects. However, direct experimental confirmation of the presence of such nano-emitters is not straightforward and the emission mechanism remains elusive. By using cathodoluminescence imaging with a high spatial resolution, we here demonstrate that CsPbBr3 nanocrystals within the Cs4PbBr6 matrix contribute to the green emission, exhibiting optical behavior distinct from the matrix. Additionally, we explored its potential as an electron beam scintillator, given its high CL intensity and exceptionally short lifetime.
{"title":"Cathodoluminescence spectral and lifetime mapping of Cs4PbBr6: fast lifetime and its scintillator application","authors":"Tetsuya Kubota, Sotatsu Yanagimoto, Hikaru Saito, Keiichirou Akiba, A. Ishii, T. Sannomiya","doi":"10.35848/1882-0786/ad1bc4","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1bc4","url":null,"abstract":"\u0000 Highly efficient green emission of Cs4PbBr6 has been attributed to intermediate states formed by embedded CsPbBr3 nanocrystals or defects. However, direct experimental confirmation of the presence of such nano-emitters is not straightforward and the emission mechanism remains elusive. By using cathodoluminescence imaging with a high spatial resolution, we here demonstrate that CsPbBr3 nanocrystals within the Cs4PbBr6 matrix contribute to the green emission, exhibiting optical behavior distinct from the matrix. Additionally, we explored its potential as an electron beam scintillator, given its high CL intensity and exceptionally short lifetime.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"4 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139380945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：