Pub Date : 2024-04-12DOI: 10.35848/1882-0786/ad3e48
K. Uesugi, R. Akaike, S. Ichikawa, Takao Nakamura, K. Kojima, Masahiko Tsuchiya, Hideto Miyake
Reducing the average Al composition of AlxGa1−xN/AlyGa1−yN multiple quantum wells (MQWs) is an effective approach to increase the current injection efficiencies of far-ultraviolet-C light-emitting diodes (far-UVC LEDs). A reduction can be realized by decreasing the Al-composition differentiation between the well and barrier layers. Compared to conventional MQWs, a 230-nm-wavelength far-UVC LED equipped with a single-Al-composition and a 50-nm-thick light-emitting layer exhibits a higher external quantum efficiency (EQE). The EQE of far-UVC LEDs with low Al-composition differentiation (~1%) is enhanced to approximately 0.6% and 1.4% under continuous wave operations at 230 nm and 236 nm wavelengths, respectively.
{"title":"230-nm-wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs","authors":"K. Uesugi, R. Akaike, S. Ichikawa, Takao Nakamura, K. Kojima, Masahiko Tsuchiya, Hideto Miyake","doi":"10.35848/1882-0786/ad3e48","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3e48","url":null,"abstract":"\u0000 Reducing the average Al composition of AlxGa1−xN/AlyGa1−yN multiple quantum wells (MQWs) is an effective approach to increase the current injection efficiencies of far-ultraviolet-C light-emitting diodes (far-UVC LEDs). A reduction can be realized by decreasing the Al-composition differentiation between the well and barrier layers. Compared to conventional MQWs, a 230-nm-wavelength far-UVC LED equipped with a single-Al-composition and a 50-nm-thick light-emitting layer exhibits a higher external quantum efficiency (EQE). The EQE of far-UVC LEDs with low Al-composition differentiation (~1%) is enhanced to approximately 0.6% and 1.4% under continuous wave operations at 230 nm and 236 nm wavelengths, respectively.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"48 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140711037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-11DOI: 10.35848/1882-0786/ad3dc1
Jiulong Yu, Guangyang Lin, Shilong Xia, Wei Huang, Tianwei Yang, J. Jiao, Xiangquan Liu, Songyan Chen, Cheng Li, Jun Zheng, Jun Li
In this paper, single-crystal GePb films were obtained by magnetron sputtering with high substrate temperature and rapid deposition rate. The GePb films have high crystalline qualities and smooth surfaces. The Pb content reached 1.29% and no segregation was observed. Based on this, a GePb-based p-i-n photodetector was successfully prepared. The device showed a room-temperature dark current density of 5.83 mA/cm2 at -1.0 V and a cutoff wavelength of 1990 nm, which covers all communication windows. At the wavelength of 1625 nm, responsivity of the photodetector reached 0.132 A/W at -1.0 V. The device demonstrates potential application in optical communications.
{"title":"P-i-n photodetector with active GePb layer grown by sputtering epitaxy","authors":"Jiulong Yu, Guangyang Lin, Shilong Xia, Wei Huang, Tianwei Yang, J. Jiao, Xiangquan Liu, Songyan Chen, Cheng Li, Jun Zheng, Jun Li","doi":"10.35848/1882-0786/ad3dc1","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3dc1","url":null,"abstract":"\u0000 In this paper, single-crystal GePb films were obtained by magnetron sputtering with high substrate temperature and rapid deposition rate. The GePb films have high crystalline qualities and smooth surfaces. The Pb content reached 1.29% and no segregation was observed. Based on this, a GePb-based p-i-n photodetector was successfully prepared. The device showed a room-temperature dark current density of 5.83 mA/cm2 at -1.0 V and a cutoff wavelength of 1990 nm, which covers all communication windows. At the wavelength of 1625 nm, responsivity of the photodetector reached 0.132 A/W at -1.0 V. The device demonstrates potential application in optical communications.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"10 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140715875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on the control of carrier density in r-SnO2 thin films grown on isostructural r-TiO2 substrates by doping with Sb aiming for power-electronics applications. The carrier density was tuned within a range of 3×1016 −2×1019 cm−3. Two types of donors with different activation energies, attributed to Sb at Sn sites and oxygen vacancies, are present in the thin films. Both activation energies decrease as the concentration of Sb increases. A vertical Schottky barrier diode employing a Sb:r-SnO2/Nb:r-TiO2 exhibits a clear rectifying property with a rectification ratio of 103 at ± 1V.
{"title":"Carrier density control of Sb-doped rutile-type SnO2 thin films and fabrication of a vertical Schottky barrier diode","authors":"Yui Takahashi, Hitoshi Takane, Hirokazu Izumi, Takeru Wakamatsu, Yuki Isobe, Kentaro Kaneko, Katsuhisa Tanaka","doi":"10.35848/1882-0786/ad3d2b","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3d2b","url":null,"abstract":"\u0000 We report on the control of carrier density in r-SnO2 thin films grown on isostructural r-TiO2 substrates by doping with Sb aiming for power-electronics applications. The carrier density was tuned within a range of 3×1016 −2×1019 cm−3. Two types of donors with different activation energies, attributed to Sb at Sn sites and oxygen vacancies, are present in the thin films. Both activation energies decrease as the concentration of Sb increases. A vertical Schottky barrier diode employing a Sb:r-SnO2/Nb:r-TiO2 exhibits a clear rectifying property with a rectification ratio of 103 at ± 1V.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140717699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-10DOI: 10.35848/1882-0786/ad3d2a
Tomohisa Miyao, Keito Yoshinaga, Takahisa Tanaka, Hiroki Ishikuro, Munehiro Tada, Ken Uchida
MOS capacitors fabricated on substrates with doping concentrations as high as 1018 cm-3 were characterized at 4.2 K. The highly doped substrate exhibited an intrinsic imaginary component of impedance at 4.2 K. The imaginary component is attributed to the time delay induced by hopping phenomena, leading to a decrease in the gate capacitance. Furthermore, we investigated the time constant associated with dopant ionization under depletion conditions and determined it to be 0.35 μs. An equivalent circuit model of the highly doped substrate at 4.2 K is also shown.
在掺杂浓度高达 1018 cm-3 的衬底上制造的 MOS 电容器在 4.2 K 下进行了表征。高掺杂衬底在 4.2 K 下表现出固有的阻抗虚分量。此外，我们还研究了耗尽条件下与掺杂电离相关的时间常数，并确定其为 0.35 μs。图中还显示了高掺杂基底在 4.2 K 时的等效电路模型。
{"title":"Imaginary impedance due to hopping phenomena and evaluation of dopant ionization time in cryogenic metal-oxide-semiconductor devices on highly doped substrate","authors":"Tomohisa Miyao, Keito Yoshinaga, Takahisa Tanaka, Hiroki Ishikuro, Munehiro Tada, Ken Uchida","doi":"10.35848/1882-0786/ad3d2a","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3d2a","url":null,"abstract":"\u0000 MOS capacitors fabricated on substrates with doping concentrations as high as 1018 cm-3 were characterized at 4.2 K. The highly doped substrate exhibited an intrinsic imaginary component of impedance at 4.2 K. The imaginary component is attributed to the time delay induced by hopping phenomena, leading to a decrease in the gate capacitance. Furthermore, we investigated the time constant associated with dopant ionization under depletion conditions and determined it to be 0.35 μs. An equivalent circuit model of the highly doped substrate at 4.2 K is also shown.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"2008 14","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140718458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-09DOI: 10.35848/1882-0786/ad3cb5
Nobuhisa Ishii, Ryuji Itakura
We demonstrate the generation of sub-two-cycle intense laser pulses based on two-stage hollow-core fiber compression in a compact setup (footprint of 0.65 m x 2.85 m) using a commercial Yb:KGW regenerative amplifier. Spectrally broadened laser pulses with an output power of 7.2 W from the second hollow-core fiber stage are compressed down to 6.6 fs (1.9 cycles at 1030 nm) using a pair of chirp mirrors and a pair of wedges with an efficiency of 86%, leading to a compressed output of 6.2 W. A pulse-to-pulse energy stability of 0.26% is measured for 10 minutes.
我们利用商用 Yb:KGW 再生放大器，在紧凑型装置（占地面积为 0.65 m x 2.85 m）中演示了基于两级中空芯光纤压缩技术的亚两周期强激光脉冲的产生。使用一对啁啾镜和一对楔形镜，将第二级中空芯光纤输出功率为 7.2 W 的光谱展宽激光脉冲压缩到 6.6 fs（1030 nm 波长下的 1.9 个周期），效率高达 86%，从而获得 6.2 W 的压缩输出功率。
{"title":"Sub-two-cycle intense pulse generation based on two-stage hollow-core fiber compression using an ytterbium amplifier","authors":"Nobuhisa Ishii, Ryuji Itakura","doi":"10.35848/1882-0786/ad3cb5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3cb5","url":null,"abstract":"\u0000 We demonstrate the generation of sub-two-cycle intense laser pulses based on two-stage hollow-core fiber compression in a compact setup (footprint of 0.65 m x 2.85 m) using a commercial Yb:KGW regenerative amplifier. Spectrally broadened laser pulses with an output power of 7.2 W from the second hollow-core fiber stage are compressed down to 6.6 fs (1.9 cycles at 1030 nm) using a pair of chirp mirrors and a pair of wedges with an efficiency of 86%, leading to a compressed output of 6.2 W. A pulse-to-pulse energy stability of 0.26% is measured for 10 minutes.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"1 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140725590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Transition metal dichalcogenides with superperiodic lattice distortions have been widely investigated as the platform of ultrafast structural phase manipulations. Here we performed ultrafast electron diffraction on room-temperature TaTe2, which exhibits peculiar double zigzag chain pattern of Ta atoms. From the time-dependent electron diffraction pattern, we revealed a photoinduced change in the crystal structure occurring within <0.5 ps, though there is no corresponding high-temperature equilibrium phase. We further clarified the slower response (~1.5 ps) reflecting the lattice thermalization. Our result suggests the unusual ultrafast crystal structure dynamics specific to the non-equilibrium transient process in TaTe2.
{"title":"Unusual photoinduced crystal structure dynamics in TaTe2 with double zigzag chain superstructure","authors":"Jumpei Koga, Yusuke Chiashi, A. Nakamura, Tomoki Akiba, Hidefumi Takahashi, Takahiro Shimojima, Shintaro Ishiwata, Kyoko Ishizaka","doi":"10.35848/1882-0786/ad3b61","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3b61","url":null,"abstract":"\u0000 Transition metal dichalcogenides with superperiodic lattice distortions have been widely investigated as the platform of ultrafast structural phase manipulations. Here we performed ultrafast electron diffraction on room-temperature TaTe2, which exhibits peculiar double zigzag chain pattern of Ta atoms. From the time-dependent electron diffraction pattern, we revealed a photoinduced change in the crystal structure occurring within <0.5 ps, though there is no corresponding high-temperature equilibrium phase. We further clarified the slower response (~1.5 ps) reflecting the lattice thermalization. Our result suggests the unusual ultrafast crystal structure dynamics specific to the non-equilibrium transient process in TaTe2.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"29 20","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140739129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-03DOI: 10.35848/1882-0786/ad3a2f
Masafumi Yokoyama, F. Horikiri, Hisashi Mori, Taichiro Konno, H. Fujikura
We have developed a pore-assisted separation (PAS) method for the fabrication of free-standing GaN substrates, where bulk GaN crystals were separated from seed GaN templates at electrochemically formed porous layers. The pore size was controlled by the electrochemical process conditions and must be greater than 100 nm to realize separation within whole wafers. A 2-inch free-standing GaN substrate having a low dislocation density of 2.7×106 cm−2 was realized by growth of an 800-μm-thick GaN layer on the porous GaN template. A 3-inch free-standing GaN substrate was also fabricated by the PAS method, indicating its good scalability.
我们开发了一种用于制造独立氮化镓衬底的孔隙辅助分离（PAS）方法，在这种方法中，块状氮化镓晶体与种子氮化镓模板在电化学形成的多孔层上分离。孔隙大小由电化学工艺条件控制，必须大于 100 纳米才能在整个晶片内实现分离。通过在多孔氮化镓模板上生长 800 微米厚的氮化镓层，实现了位错密度低至 2.7×106 厘米-2 的 2 英寸独立氮化镓衬底。利用 PAS 方法还制造出了 3 英寸的独立 GaN 衬底，这表明该方法具有良好的可扩展性。
{"title":"Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers","authors":"Masafumi Yokoyama, F. Horikiri, Hisashi Mori, Taichiro Konno, H. Fujikura","doi":"10.35848/1882-0786/ad3a2f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3a2f","url":null,"abstract":"\u0000 We have developed a pore-assisted separation (PAS) method for the fabrication of free-standing GaN substrates, where bulk GaN crystals were separated from seed GaN templates at electrochemically formed porous layers. The pore size was controlled by the electrochemical process conditions and must be greater than 100 nm to realize separation within whole wafers. A 2-inch free-standing GaN substrate having a low dislocation density of 2.7×106 cm−2 was realized by growth of an 800-μm-thick GaN layer on the porous GaN template. A 3-inch free-standing GaN substrate was also fabricated by the PAS method, indicating its good scalability.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"44 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140747583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Efficient reverse intersystem crossing (RISC) is an important process for thermally activated delayed fluorescence (TADF) to suppress efficiency roll-off in organic light-emitting diodes (OLEDs). Enhancing spin-orbit coupling is effective for fast RISC, which is achieved by mediating a locally excited triplet state when RISC occurs between charge transfer states. Here, we experimentally confirmed that efficient RISC occurred in triarylborane-based TADF emitters named Phox-Meπ, Phox-MeOπ, and MeO3Ph-FMeπ. The three emitters showed large rate constants of RISC exceeding 106 s−1. Phox-Meπ-based OLEDs exhibited higher maximum external quantum efficiency (EQEmax = 10.0%) compared to Phox-MeOπ-based OLED (EQEmax = 6.7%).
{"title":"Triarylborane-based thermally activated delayed fluorescence materials with an efficient reverse intersystem crossing","authors":"Ryosuke Okumura, Y. Kusakabe, Florian Rauch, Lukas Lubczyk, Katsuaki Suzuki, Todd Marder, Hironori Kaji","doi":"10.35848/1882-0786/ad392a","DOIUrl":"https://doi.org/10.35848/1882-0786/ad392a","url":null,"abstract":"\u0000 Efficient reverse intersystem crossing (RISC) is an important process for thermally activated delayed fluorescence (TADF) to suppress efficiency roll-off in organic light-emitting diodes (OLEDs). Enhancing spin-orbit coupling is effective for fast RISC, which is achieved by mediating a locally excited triplet state when RISC occurs between charge transfer states. Here, we experimentally confirmed that efficient RISC occurred in triarylborane-based TADF emitters named Phox-Meπ, Phox-MeOπ, and MeO3Ph-FMeπ. The three emitters showed large rate constants of RISC exceeding 106 s−1. Phox-Meπ-based OLEDs exhibited higher maximum external quantum efficiency (EQEmax = 10.0%) compared to Phox-MeOπ-based OLED (EQEmax = 6.7%).","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"30 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140366726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-28DOI: 10.35848/1882-0786/ad38fc
Kazuma Nakajima, Shogo Mitsuhashi, Masanori Ozaki
This study investigates the influence of Grandjean-Cano disclinations on the cholesteric-blue phase I (Ch-BPI) phase transition, revealing the pivotal role of defects in phase transition of liquid crystals (LCs). We prepared the disclinations by wedge cells or parallel cells with an alignment pattern and demonstrated that the disclinations induce a phase transition in Ch-BPI. Furthermore, we demonstrated the control of the BPI appearance areas by utilizing this property. This defect-induced transition technique not only provides a novel method for controlling BPI orientation but also offers insights into soft material crystal growth, suggesting potential applications in new BPLC-based device development.
{"title":"Selective phase transition of cholesteric blue phase I induced by pattern-controlled Grandjean-Cano disclinations","authors":"Kazuma Nakajima, Shogo Mitsuhashi, Masanori Ozaki","doi":"10.35848/1882-0786/ad38fc","DOIUrl":"https://doi.org/10.35848/1882-0786/ad38fc","url":null,"abstract":"\u0000 This study investigates the influence of Grandjean-Cano disclinations on the cholesteric-blue phase I (Ch-BPI) phase transition, revealing the pivotal role of defects in phase transition of liquid crystals (LCs). We prepared the disclinations by wedge cells or parallel cells with an alignment pattern and demonstrated that the disclinations induce a phase transition in Ch-BPI. Furthermore, we demonstrated the control of the BPI appearance areas by utilizing this property. This defect-induced transition technique not only provides a novel method for controlling BPI orientation but also offers insights into soft material crystal growth, suggesting potential applications in new BPLC-based device development.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"124 43","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140370114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The radioactive 4H-32SiC is applied as energy converting material to fabricate high performance betavoltaic batteries. The time-related component change is considered, and the structural, stability and electrical property changes are calculated by Density Functional Theory (DFT). As time goes by, the number of 32Si atoms decrease exponentially while the concentration of 32S increases gradually. The Si63PC64 configurations have smaller lattice constants, while the lattices of Si62PSC64 configurations are larger. All Si63PC64 and Si62PSC64 configurations have very small bandgaps indicating the metallic behavior. This suggests that the betavoltaic battery with 4H-32SiC is likely to transform into a Schottky diode over time.
{"title":"First principles study on the time-related properties of 4H-32SiC as energy converting material of betavoltaic battery","authors":"Xiaoyi Li, Jingbin Lu, Xinrui Liu, Yu Zhang, Yuxin Liu, Yuehui Zhang, Fubo Tian","doi":"10.35848/1882-0786/ad388d","DOIUrl":"https://doi.org/10.35848/1882-0786/ad388d","url":null,"abstract":"\u0000 The radioactive 4H-32SiC is applied as energy converting material to fabricate high performance betavoltaic batteries. The time-related component change is considered, and the structural, stability and electrical property changes are calculated by Density Functional Theory (DFT). As time goes by, the number of 32Si atoms decrease exponentially while the concentration of 32S increases gradually. The Si63PC64 configurations have smaller lattice constants, while the lattices of Si62PSC64 configurations are larger. All Si63PC64 and Si62PSC64 configurations have very small bandgaps indicating the metallic behavior. This suggests that the betavoltaic battery with 4H-32SiC is likely to transform into a Schottky diode over time.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"34 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140373798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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