Pub Date : 2024-07-02DOI: 10.35848/1882-0786/ad5e33
Shigenori Ueda, Masaki Mizuguchi
Interface band dispersion of a MgO(2 nm)/Fe(50 nm) heterostructure was detected by hard X-ray angle-resolved photoemission spectroscopy (HARPES) with the excitation photon energy of 3.29 keV by utilizing X-ray total reflection (TR). By subtracting bulk-sensitive band dispersion of the buried Fe(001) obtained by HARPES in the non-TR condition from near-interface-sensitive Fe(001) band dispersion obtained by TR-HARPES, the band-folding of Fe and the O 2p -Fe 3d hybridization at the heterointerface were clearly unveiled. These results suggest that HARPES can probe not only bulk band but also buried interface band of heterojunctions.
利用硬 X 射线角分辨光发射光谱 (HARPES)，在 3.29 keV 的激发光子能量下，利用 X 射线全反射 (TR) 技术检测了氧化镁（2 nm）/铁（50 nm）异质结构的界面带色散。将 HARPES 在非 TR 条件下获得的埋藏 Fe(001) 的体敏感带色散与 TR-HARPES 获得的近界面敏感 Fe(001) 带色散相减，可以清楚地揭示异界面上 Fe 的带折叠和 O 2p -Fe 3d 杂化。这些结果表明，HARPES 不仅能探测异质结的体带，还能探测异质结的埋藏界面带。
{"title":"Probing buried interface band dispersion of a MgO/Fe heterostructure with hard X-ray angle-resolved photoemission","authors":"Shigenori Ueda, Masaki Mizuguchi","doi":"10.35848/1882-0786/ad5e33","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5e33","url":null,"abstract":"\u0000 Interface band dispersion of a MgO(2 nm)/Fe(50 nm) heterostructure was detected by hard X-ray angle-resolved photoemission spectroscopy (HARPES) with the excitation photon energy of 3.29 keV by utilizing X-ray total reflection (TR). By subtracting bulk-sensitive band dispersion of the buried Fe(001) obtained by HARPES in the non-TR condition from near-interface-sensitive Fe(001) band dispersion obtained by TR-HARPES, the band-folding of Fe and the O 2p -Fe 3d hybridization at the heterointerface were clearly unveiled. These results suggest that HARPES can probe not only bulk band but also buried interface band of heterojunctions.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"10 3‐5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141685073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-25DOI: 10.35848/1882-0786/ad43b0
Haruna Kaneko, Rikuto Ota, Keito Kobayashi, S. Kanai, M. Elyasi, Gerrit Bauer, Hideo Ohno, Shunsuke Fukami
Stochastic magnetic tunnel junctions (s-MTJs) attract attention as key elements for spintronics-based probabilistic (p-) computers. The performance of p-computers is governed by the time-domain and the time-averaged response of single s-MTJs varying with temperature. Here we present results of the time-domain (rf) voltage and time-averaged (dc) resistance 〈R〉 of s-MTJs with perpendicular magnetization as functions of perpendicular magnetic fields H z and temperatures T=20-130°C. We observe that both relaxation time (time-domain response) and the slope of the 〈R〉-H z curve (time-averaged response) decrease with increasing temperature. We discuss the physics underlying these results including the thermally induced spatially non-uniform collective spin dynamics.
随机磁隧道结（s-MTJs）作为基于自旋电子学的概率计算机（p-）的关键元件备受关注。p 型计算机的性能取决于单个 s-MTJ 随温度变化的时域和时间平均响应。在此，我们展示了具有垂直磁化的 s-MTJ 的时域（射频）电压和时间平均（直流）电阻〈R〉与垂直磁场 H z 和温度 T=20-130°C 的函数关系。我们观察到，弛豫时间（时域响应）和〈R〉-H z 曲线的斜率（时间平均响应）都随着温度的升高而减小。我们讨论了这些结果背后的物理学原理，包括热诱导的空间非均匀集体自旋动力学。
{"title":"Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization","authors":"Haruna Kaneko, Rikuto Ota, Keito Kobayashi, S. Kanai, M. Elyasi, Gerrit Bauer, Hideo Ohno, Shunsuke Fukami","doi":"10.35848/1882-0786/ad43b0","DOIUrl":"https://doi.org/10.35848/1882-0786/ad43b0","url":null,"abstract":"\u0000 Stochastic magnetic tunnel junctions (s-MTJs) attract attention as key elements for spintronics-based probabilistic (p-) computers. The performance of p-computers is governed by the time-domain and the time-averaged response of single s-MTJs varying with temperature. Here we present results of the time-domain (rf) voltage and time-averaged (dc) resistance 〈R〉 of s-MTJs with perpendicular magnetization as functions of perpendicular magnetic fields H\u0000 \u0000 z\u0000 and temperatures T=20-130°C. We observe that both relaxation time (time-domain response) and the slope of the 〈R〉-H\u0000 \u0000 z\u0000 curve (time-averaged response) decrease with increasing temperature. We discuss the physics underlying these results including the thermally induced spatially non-uniform collective spin dynamics.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"54 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140656470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-24DOI: 10.35848/1882-0786/ad4305
Yo Inoue, Tateaki Shikada, Shinji Bono, H. Moritake
Sinusoidal electric fields are applied to liquid crystals (LCs) across various frequencies ranging from 0.1 Hz to 10 kHz to investigate the oscillatory behavior of LC directors. In a 1.5-μm-thick 5CB cell, a significant decline in refractive index change occurs in the frequency range greater than 10 Hz, in which the LC director cannot sufficiently follow the rapid fluctuations in field intensity. To evaluate the response speed of the LC under sinusoidal electric fields, the cutoff frequency is introduced as a response indicator. Enhancement to the cutoff frequency can be achieved through conventional fast response techniques such as polymer-stabilized LCs.
{"title":"Evaluation of cutoff characteristics in oscillating liquid crystal molecules under sinusoidal electric fields","authors":"Yo Inoue, Tateaki Shikada, Shinji Bono, H. Moritake","doi":"10.35848/1882-0786/ad4305","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4305","url":null,"abstract":"\u0000 Sinusoidal electric fields are applied to liquid crystals (LCs) across various frequencies ranging from 0.1 Hz to 10 kHz to investigate the oscillatory behavior of LC directors. In a 1.5-μm-thick 5CB cell, a significant decline in refractive index change occurs in the frequency range greater than 10 Hz, in which the LC director cannot sufficiently follow the rapid fluctuations in field intensity. To evaluate the response speed of the LC under sinusoidal electric fields, the cutoff frequency is introduced as a response indicator. Enhancement to the cutoff frequency can be achieved through conventional fast response techniques such as polymer-stabilized LCs.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"95 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140665179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-23DOI: 10.35848/1882-0786/ad422f
Hayato Nonogaki, Daichi Sei, Mohd Saiful Dzulkefly Bin Zan, Yosuke Tanaka
We demonstrate a method for fast and precise Brillouin frequency shift measurement based on searching for the zero-crossing point of a virtually composed spectra of Brillouin gain and loss, obtained by dual-frequency probe beam. Simulations and experiments show that searching for the zero-crossing point of virtually synthesized Brillouin gain spectrum can be easily done without a large error compared with the peak search of Brillouin gain spectrum in the conventional method.
{"title":"Brillouin frequency shift measurement by zero-crossing point search in virtually synthesized spectra of Brillouin gain and loss","authors":"Hayato Nonogaki, Daichi Sei, Mohd Saiful Dzulkefly Bin Zan, Yosuke Tanaka","doi":"10.35848/1882-0786/ad422f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad422f","url":null,"abstract":"\u0000 We demonstrate a method for fast and precise Brillouin frequency shift measurement based on searching for the zero-crossing point of a virtually composed spectra of Brillouin gain and loss, obtained by dual-frequency probe beam. Simulations and experiments show that searching for the zero-crossing point of virtually synthesized Brillouin gain spectrum can be easily done without a large error compared with the peak search of Brillouin gain spectrum in the conventional method.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"59 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140670872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-19DOI: 10.35848/1882-0786/ad40fb
Toshihiko Fukamachi, Junichi Nishinaka, Koichi Naniwae, Shuichi Usuda, Haruki Fukai, Akihiko Sugitani, M. Uemukai, T. Tanikawa, R. Katayama
We have developed the GaN-based distributed feedback laser diode (DFB-LD) with the detuning of +5 nm to obtain smaller temperature dependence of the threshold current. We found that the current-light characteristics almost overlapped up to 300 mW between 25○C and 80○C. The estimated characteristic temperature is about 2550 K. These indicate that our DFB-LD is promising for applications that require small temperature dependence in the output power and oscillation wavelength at constant operation current without precise temperature control.
{"title":"Demonstration of violet-DFB laser with fairly small temperature dependence in current-light characteristics","authors":"Toshihiko Fukamachi, Junichi Nishinaka, Koichi Naniwae, Shuichi Usuda, Haruki Fukai, Akihiko Sugitani, M. Uemukai, T. Tanikawa, R. Katayama","doi":"10.35848/1882-0786/ad40fb","DOIUrl":"https://doi.org/10.35848/1882-0786/ad40fb","url":null,"abstract":"\u0000 We have developed the GaN-based distributed feedback laser diode (DFB-LD) with the detuning of +5 nm to obtain smaller temperature dependence of the threshold current. We found that the current-light characteristics almost overlapped up to 300 mW between 25○C and 80○C. The estimated characteristic temperature is about 2550 K. These indicate that our DFB-LD is promising for applications that require small temperature dependence in the output power and oscillation wavelength at constant operation current without precise temperature control.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":" 511","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140682421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Improved p-GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p-GaN surface, leading to an extended depletion region under the same gate bias and thus reducing the electric field. Furthermore, the Schottky barrier height also increases by OCT. Consequently, suppressed gate leakage current and enlarged gate breakdown voltage are achieved. Notably, the maximum applicable gate bias also increases from 4 V to 8.1 V for a 10-year lifetime at a failure rate of 1%.
{"title":"Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique","authors":"Chengcai Wang, Junting Chen, Zuoheng Jiang, Haohao Chen","doi":"10.35848/1882-0786/ad4088","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4088","url":null,"abstract":"\u0000 Improved p-GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching. The OCT compensates for the Mg acceptors near the p-GaN surface, leading to an extended depletion region under the same gate bias and thus reducing the electric field. Furthermore, the Schottky barrier height also increases by OCT. Consequently, suppressed gate leakage current and enlarged gate breakdown voltage are achieved. Notably, the maximum applicable gate bias also increases from 4 V to 8.1 V for a 10-year lifetime at a failure rate of 1%.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":" 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140685982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-16DOI: 10.35848/1882-0786/ad3f6d
Gongying Chen, Chao Zeng, Ye Liao, W. Huang, Jianyuan Wang, Guangyang Lin, Cheng Li, Songyan Chen
LiNbO3 (LNO) is currently intensively studied as an important ferroelectric material. In this work, polycrystalline LNO films were prepared through a sputtering technique, and their ferroelectricity-related resistive switching property was investigated using a device structure of PtSi/SiO2/LNO/Pt. The device exhibits a volatile resistance switching property at lower positive sweeping voltages and a stable bipolar nonvolatile switching property at higher sweeping voltages. The resistive switching mechanism of the device is discussed based on the domain wall conductivity characteristics of the polycrystalline LNO thin films. The PtSi/SiO2/LNO/Pt memristor device has potential applications in memory and artificial neural synapses.
{"title":"Resistive switching properties in polycrystalline LiNbO3 thin films","authors":"Gongying Chen, Chao Zeng, Ye Liao, W. Huang, Jianyuan Wang, Guangyang Lin, Cheng Li, Songyan Chen","doi":"10.35848/1882-0786/ad3f6d","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3f6d","url":null,"abstract":"\u0000 LiNbO3 (LNO) is currently intensively studied as an important ferroelectric material. In this work, polycrystalline LNO films were prepared through a sputtering technique, and their ferroelectricity-related resistive switching property was investigated using a device structure of PtSi/SiO2/LNO/Pt. The device exhibits a volatile resistance switching property at lower positive sweeping voltages and a stable bipolar nonvolatile switching property at higher sweeping voltages. The resistive switching mechanism of the device is discussed based on the domain wall conductivity characteristics of the polycrystalline LNO thin films. The PtSi/SiO2/LNO/Pt memristor device has potential applications in memory and artificial neural synapses.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"16 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140697198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-16DOI: 10.35848/1882-0786/ad3f6c
Haruki Fujii, M. Kaneko, Tsunenobu Kimoto
Deep levels near the surface of 4H-SiC after dry oxidation were investigated. A large and broad peak appeared in the low-temperature range of deep level transient spectroscopy (DLTS) spectra after oxidation of SiC at 1300oC, indicating multiple deep levels energetically located near the conduction band edge are generated inside SiC by thermal oxidation. Analyses of the DLTS spectra acquired with changing the bias voltage revealed that the majority of deep levels is located very near the SiC surface, within about 6 nm-deep region from the surface. The area density of the observed deep levels is higher than 3×1012 cm-2.
研究了干氧化后 4H-SiC 表面附近的深层位。在 1300oC 下氧化 SiC 后，深电平瞬态光谱（DLTS）光谱的低温范围内出现了一个大而宽的峰值，表明热氧化在 SiC 内部产生了多个能量位于导带边缘附近的深电平。对改变偏置电压后获得的 DLTS 光谱进行分析后发现，大部分深电平位于非常靠近 SiC 表面的地方，距离表面约 6 nm 深的区域内。观察到的深电平面积密度高于 3×1012 cm-2。
{"title":"Generation of deep levels near the 4H-SiC surface by thermal oxidation","authors":"Haruki Fujii, M. Kaneko, Tsunenobu Kimoto","doi":"10.35848/1882-0786/ad3f6c","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3f6c","url":null,"abstract":"\u0000 Deep levels near the surface of 4H-SiC after dry oxidation were investigated. A large and broad peak appeared in the low-temperature range of deep level transient spectroscopy (DLTS) spectra after oxidation of SiC at 1300oC, indicating multiple deep levels energetically located near the conduction band edge are generated inside SiC by thermal oxidation. Analyses of the DLTS spectra acquired with changing the bias voltage revealed that the majority of deep levels is located very near the SiC surface, within about 6 nm-deep region from the surface. The area density of the observed deep levels is higher than 3×1012 cm-2.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140698845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a monolithic heterodyne receiver by using the AlGaN/GaN nonlinear transmission line as a local oscillator and a mixer simultaneously. This heterodyne receiver has a high radio frequency bandwidth from 80 to 360 GHz and a high intermediate frequency bandwidth of 18 GHz. These results indicate that the nonlinear transmission line receiver has promising potential in broadband spectrum analysis.
{"title":"A high-RF-bandwidth, high-IF-bandwidth monolithic terahertz heterodyne receiver based on AlGaN/GaN nonlinear transmission lines as a local oscillator and mixer","authors":"L. Xiang, Zhou Qi, Chenyang Qin, Q. Ding, Yifan Zhu, Xinxing Li, Lin Jin, Shangguan Yang, Jinfeng Zhang, Jiandong Sun, Hua Qin","doi":"10.35848/1882-0786/ad3f6e","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3f6e","url":null,"abstract":"\u0000 We report a monolithic heterodyne receiver by using the AlGaN/GaN nonlinear transmission line as a local oscillator and a mixer simultaneously. This heterodyne receiver has a high radio frequency bandwidth from 80 to 360 GHz and a high intermediate frequency bandwidth of 18 GHz. These results indicate that the nonlinear transmission line receiver has promising potential in broadband spectrum analysis.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"10 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140696071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-12DOI: 10.35848/1882-0786/ad3e49
Kun Wang, Kazuya Kishizawa, Kohei Noda, Wolfgang Kurz, Xingchen Dong, Alexander W. Koch, Heeyoung Lee, Kentaro Nakamura, Yosuke Mizuno
Fiber Bragg gratings (FBGs) have been extensively used for single-point and multi-point measurements, mostly inscribed in single-mode fibers (SMFs). However, it is feasible to inscribe FBGs in multimode fibers (MMFs), which resist bending and can perform discriminative sensing of multiple physical parameters. When using a simple experimental setup to measure the temperature dependence of the dip in the transmission spectrum, significant fluctuations in its spectral power can be observed. Therefore, this study shows that the temperature-dependent spectral power fluctuations in multimode FBGs can be mitigated using a reflectometric configuration with suppressed modal interference, leading to higher-reliability temperature sensing.
{"title":"Spectral power stabilization against temperature variations in multimode fiber Bragg gratings","authors":"Kun Wang, Kazuya Kishizawa, Kohei Noda, Wolfgang Kurz, Xingchen Dong, Alexander W. Koch, Heeyoung Lee, Kentaro Nakamura, Yosuke Mizuno","doi":"10.35848/1882-0786/ad3e49","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3e49","url":null,"abstract":"\u0000 Fiber Bragg gratings (FBGs) have been extensively used for single-point and multi-point measurements, mostly inscribed in single-mode fibers (SMFs). However, it is feasible to inscribe FBGs in multimode fibers (MMFs), which resist bending and can perform discriminative sensing of multiple physical parameters. When using a simple experimental setup to measure the temperature dependence of the dip in the transmission spectrum, significant fluctuations in its spectral power can be observed. Therefore, this study shows that the temperature-dependent spectral power fluctuations in multimode FBGs can be mitigated using a reflectometric configuration with suppressed modal interference, leading to higher-reliability temperature sensing.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"109 S2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140709229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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