Pub Date : 2024-03-25DOI: 10.35848/1882-0786/ad3799
Sota Mine, G. Gandubert, J. E. Nkeck, X. Ropagnol, K. Murate, F. Blanchard
We demonstrated the bandwidth broadening of terahertz waves detected by heterodyne electro-optical sampling by implementing a ridge waveguide structure in a lithium niobate (LiNbO3) crystal. Such an approach effectively reduces absorption loss, eases the phase matching condition and enhances the nonlinear interaction length through the optical confinement effect. As a result, we have more than doubled the bandwidth and improved the signal-to-noise ratio compared with an equivalent approach in a bulk LiNbO3 crystal. Heterodyne electro-optic sampling in a ridged-waveguide structure is only marginally dependent on the probe beam wavelength, suggesting its potential as a versatile method for broadband terahertz detection.
{"title":"Broadband heterodyne electro-optic sampling using a lithium niobate ridge-waveguide","authors":"Sota Mine, G. Gandubert, J. E. Nkeck, X. Ropagnol, K. Murate, F. Blanchard","doi":"10.35848/1882-0786/ad3799","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3799","url":null,"abstract":"\u0000 We demonstrated the bandwidth broadening of terahertz waves detected by heterodyne electro-optical sampling by implementing a ridge waveguide structure in a lithium niobate (LiNbO3) crystal. Such an approach effectively reduces absorption loss, eases the phase matching condition and enhances the nonlinear interaction length through the optical confinement effect. As a result, we have more than doubled the bandwidth and improved the signal-to-noise ratio compared with an equivalent approach in a bulk LiNbO3 crystal. Heterodyne electro-optic sampling in a ridged-waveguide structure is only marginally dependent on the probe beam wavelength, suggesting its potential as a versatile method for broadband terahertz detection.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":" June","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140383392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-25DOI: 10.35848/1882-0786/ad379a
Tatsuya Inoue, Takashi Onaya, Koji Kita
The effect of the strain on the ferroelectricity of HfO2 thin films after crystallization was investigated by applying the uniaxial mechanical strains to Au/HfO2/TiN metal-ferroelectric-metal capacitors. The remnant polarization (2P r) of MFM capacitors increased by applying the tensile strain during polarization switching. This phenomenon should not be attributed to the phase transformation from non-ferroelectric to ferroelectric phase, taking account of the fast relaxation of the 2P r after removal of the mechanical strain, and the fact that the crystal structure of HfO2 thin films evaluated by grazing incident X-ray diffraction measurement was not changed by the tensile strain.
通过对 Au/HfO2/TiN 金属铁电金属电容器施加单轴机械应变，研究了应变对结晶后 HfO2 薄膜铁电性的影响。在极化切换过程中，施加拉伸应变会增加金属-铁电-金属电容器的残余极化（2P r）。考虑到机械应变消除后 2P r 的快速弛豫，以及通过掠入射 X 射线衍射测量评估的 HfO2 薄膜晶体结构未因拉伸应变而改变，这一现象不应归因于从非铁电相向铁电相的相变。
{"title":"Enhancement of remnant polarization in ferroelectric HfO2 thin films induced by mechanical uniaxial tensile strain after crystallization process","authors":"Tatsuya Inoue, Takashi Onaya, Koji Kita","doi":"10.35848/1882-0786/ad379a","DOIUrl":"https://doi.org/10.35848/1882-0786/ad379a","url":null,"abstract":"\u0000 The effect of the strain on the ferroelectricity of HfO2 thin films after crystallization was investigated by applying the uniaxial mechanical strains to Au/HfO2/TiN metal-ferroelectric-metal capacitors. The remnant polarization (2P\u0000 r) of MFM capacitors increased by applying the tensile strain during polarization switching. This phenomenon should not be attributed to the phase transformation from non-ferroelectric to ferroelectric phase, taking account of the fast relaxation of the 2P\u0000 r after removal of the mechanical strain, and the fact that the crystal structure of HfO2 thin films evaluated by grazing incident X-ray diffraction measurement was not changed by the tensile strain.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"117 34","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140380937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-25DOI: 10.35848/1882-0786/ad3798
T. Okumura, Teruki Anan, Heping Shi, Pankaj Attri, K. Kamataki, Naoto Yamashita, N. Itagaki, M. Shiratani, Yushi Ishibashi, K. Koga, V. Mildažienė
This study reports the response of lettuce seeds undergoing dormancy breaking and early senescence to DBD plasma irradiation. A heat map of germination percentages at 12 hours revealed that the dormancy breaks by 39 days of storage and a 1-min plasma irradiation enhances germination for dormant seeds. Plasma irradiation does not affect already dormancy-broken seeds. Early senescence by storage was estimated by ESR measurements and molecular modification of quercetin. This study revealed that lettuce seed susceptibility to plasma irradiation depends on storage time and conditions, with dormancy state as a critical variable modulating the impact of plasma irradiation.
{"title":"Response of lettuce seeds undergoing dormancy break and early senescence to plasma irradiation","authors":"T. Okumura, Teruki Anan, Heping Shi, Pankaj Attri, K. Kamataki, Naoto Yamashita, N. Itagaki, M. Shiratani, Yushi Ishibashi, K. Koga, V. Mildažienė","doi":"10.35848/1882-0786/ad3798","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3798","url":null,"abstract":"\u0000 This study reports the response of lettuce seeds undergoing dormancy breaking and early senescence to DBD plasma irradiation. A heat map of germination percentages at 12 hours revealed that the dormancy breaks by 39 days of storage and a 1-min plasma irradiation enhances germination for dormant seeds. Plasma irradiation does not affect already dormancy-broken seeds. Early senescence by storage was estimated by ESR measurements and molecular modification of quercetin. This study revealed that lettuce seed susceptibility to plasma irradiation depends on storage time and conditions, with dormancy state as a critical variable modulating the impact of plasma irradiation.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"116 28","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140381707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-25DOI: 10.35848/1882-0786/ad379c
M. Rahman, N. Al-Mamun, Nicholas Glavin, A. Haque, Fan Ren, S. Pearton, Douglas E. Wolfe
In this study, we explore the rejuvenation of a Zener diode degraded by high electrical stress, leading to a leftward shift, and broadening of the Zener breakdown voltage knee, alongside a 57% reduction in forward current. We employed a non-thermal annealing method involving high-density electric pulses with short pulse width and low frequency. The annealing process took < 30 seconds at near-ambient temperature. Raman spectroscopy supports the electrical characterization, showing enhancement in crystallinity to explain the restoration of the breakdown knee followed by improvement in forward current by ~ 85%.
{"title":"Rejuvenation of degraded Zener diodes with the electron wind force","authors":"M. Rahman, N. Al-Mamun, Nicholas Glavin, A. Haque, Fan Ren, S. Pearton, Douglas E. Wolfe","doi":"10.35848/1882-0786/ad379c","DOIUrl":"https://doi.org/10.35848/1882-0786/ad379c","url":null,"abstract":"\u0000 In this study, we explore the rejuvenation of a Zener diode degraded by high electrical stress, leading to a leftward shift, and broadening of the Zener breakdown voltage knee, alongside a 57% reduction in forward current. We employed a non-thermal annealing method involving high-density electric pulses with short pulse width and low frequency. The annealing process took < 30 seconds at near-ambient temperature. Raman spectroscopy supports the electrical characterization, showing enhancement in crystallinity to explain the restoration of the breakdown knee followed by improvement in forward current by ~ 85%.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":" 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140383822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have introduced a three-component light-emitting layer consisting of a host, a phosphorescent assist dopant, and a phosphorescent emitter to simultaneously realize high efficiency and long lifetime in near-infrared organic light-emitting diodes. An efficient energy transfer between the two phosphorescent materials was observed with 1 wt% doping ratio of the near-infrared emitter, significantly enhancing the external quantum efficiency reaching 10.5% with an emission peak at 769 nm. The device showed a low drive voltage and a long operational lifetime, with a luminance decay of less than 11% from the initial value after 4800 hours under accelerated conditions of 100 mA/cm2.
{"title":"Near-infrared phosphorescent OLEDs exhibiting over 10% external quantum efficiency and extremely long lifetime using resonant energy transfer with a phosphorescent assist dopant","authors":"T. Hanayama, Takeshi Sano, Yumiko Saito, Takeru Nakamura, Yutaka Okuyama, Hisahiro Sasabe, Junji Kido","doi":"10.35848/1882-0786/ad3725","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3725","url":null,"abstract":"\u0000 We have introduced a three-component light-emitting layer consisting of a host, a phosphorescent assist dopant, and a phosphorescent emitter to simultaneously realize high efficiency and long lifetime in near-infrared organic light-emitting diodes. An efficient energy transfer between the two phosphorescent materials was observed with 1 wt% doping ratio of the near-infrared emitter, significantly enhancing the external quantum efficiency reaching 10.5% with an emission peak at 769 nm. The device showed a low drive voltage and a long operational lifetime, with a luminance decay of less than 11% from the initial value after 4800 hours under accelerated conditions of 100 mA/cm2.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":" 33","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140213861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.35848/1882-0786/ad36ac
S. Ushiba, Yuka Tokuda, Tomomi Nakano, T. Ono, Shinsuke Tani, Masahiko Kimura, Kazuhiko Matsumoto
In solution-gated graphene field-effect transistors (SG-GFETs), cations in electrolyte solutions can intercalate between graphene and SiO2. Such permeation affects substrate-induced hole doping effects, resulting in drifts in the charge neutrality point (CNP) of SG-GFETs. In this study, we investigated the effect of submerging GFETs in electrolyte solutions on CNP values. The results revealed that the CNP decreased considerably from approximately 180 mV to nearly zero with the increase in the immersion period. The CNP drifts during electrical measurements were also suppressed by the prolonged submersion. These insights can be used for developing improved SG-GFETs.
{"title":"Drift suppression of solution-gated graphene field-effect transistors through electrolyte submersion","authors":"S. Ushiba, Yuka Tokuda, Tomomi Nakano, T. Ono, Shinsuke Tani, Masahiko Kimura, Kazuhiko Matsumoto","doi":"10.35848/1882-0786/ad36ac","DOIUrl":"https://doi.org/10.35848/1882-0786/ad36ac","url":null,"abstract":"\u0000 In solution-gated graphene field-effect transistors (SG-GFETs), cations in electrolyte solutions can intercalate between graphene and SiO2. Such permeation affects substrate-induced hole doping effects, resulting in drifts in the charge neutrality point (CNP) of SG-GFETs. In this study, we investigated the effect of submerging GFETs in electrolyte solutions on CNP values. The results revealed that the CNP decreased considerably from approximately 180 mV to nearly zero with the increase in the immersion period. The CNP drifts during electrical measurements were also suppressed by the prolonged submersion. These insights can be used for developing improved SG-GFETs.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":" 36","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140221107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.35848/1882-0786/ad36ab
Advait Gilankar, Ahmad Islam, M. McCartney, Abishek Katta, Nabasindhu Das, David J. Smith, N. Kalarickal
A unique field termination structure combining a 3-step field-plate with N-ion implantation to enhance the reverse breakdown performance of Pt/β-Ga2O3 schottky diodes (SBDs) and NiO/β-Ga2O3 heterojunction diodes (HJDs) is reported. The fabricated devices showed a low Ron,sp of 6.2 mΩ-cm2 for SBDs and 6.8 mΩ-cm2 for HJDs, respectively. HJDs showed a 0.8V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ-cm2. The devices also showed low reverse leakage current (<1mA/cm2) and a breakdown voltage of ~1.4 kV. These results offer an alternative simpler route for fabricating high-performance kilo-volt class β-Ga2O3 diode.
{"title":"3-step field-plated β-Ga2O3 SBDs and HJDs with sub-1 V turn-on and kilo-volt class breakdown","authors":"Advait Gilankar, Ahmad Islam, M. McCartney, Abishek Katta, Nabasindhu Das, David J. Smith, N. Kalarickal","doi":"10.35848/1882-0786/ad36ab","DOIUrl":"https://doi.org/10.35848/1882-0786/ad36ab","url":null,"abstract":"\u0000 A unique field termination structure combining a 3-step field-plate with N-ion implantation to enhance the reverse breakdown performance of Pt/β-Ga2O3 schottky diodes (SBDs) and NiO/β-Ga2O3 heterojunction diodes (HJDs) is reported. The fabricated devices showed a low Ron,sp of 6.2 mΩ-cm2 for SBDs and 6.8 mΩ-cm2 for HJDs, respectively. HJDs showed a 0.8V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ-cm2. The devices also showed low reverse leakage current (<1mA/cm2) and a breakdown voltage of ~1.4 kV. These results offer an alternative simpler route for fabricating high-performance kilo-volt class β-Ga2O3 diode.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":" 36","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140220846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-14DOI: 10.35848/1882-0786/ad33ea
Pankaj Attri, K. Koga, Jamoliddin Razzokov, T. Okumura, K. Kamataki, Tomohiro Nozaki, M. Shiratani
The present study focused on CO2 capture, storage, and conversion through the innovative integration of plasma-ionic liquid (IL) technology. For the first time, we employed plasma-IL technology to confront climate change challenges. We utilized the [Bmim]Cl IL to capture and store CO2 under atmospheric pressure, and subsequently, we employed plasma to induce the transformation of IL-captured CO2 into CO. Furthermore, to enhance our understanding of the process of CO2 and CO capture in water and IL solutions, we performed computer simulations. This comprehensive approach provides valuable insights into the potential of plasma-IL technology as a viable solution for climate change.
{"title":"Plasma-ionic liquid assisted CO2 capture and conversion: A novel technology","authors":"Pankaj Attri, K. Koga, Jamoliddin Razzokov, T. Okumura, K. Kamataki, Tomohiro Nozaki, M. Shiratani","doi":"10.35848/1882-0786/ad33ea","DOIUrl":"https://doi.org/10.35848/1882-0786/ad33ea","url":null,"abstract":"\u0000 The present study focused on CO2 capture, storage, and conversion through the innovative integration of plasma-ionic liquid (IL) technology. For the first time, we employed plasma-IL technology to confront climate change challenges. We utilized the [Bmim]Cl IL to capture and store CO2 under atmospheric pressure, and subsequently, we employed plasma to induce the transformation of IL-captured CO2 into CO. Furthermore, to enhance our understanding of the process of CO2 and CO capture in water and IL solutions, we performed computer simulations. This comprehensive approach provides valuable insights into the potential of plasma-IL technology as a viable solution for climate change.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"22 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140243564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-13DOI: 10.35848/1882-0786/ad3367
P. Döring, T. Tschirky
In this work, degenerate n-type GaN thin films prepared by co-sputtering from a liquid Ga-target were demonstrated and their low field scattering mechanisms described. Extremely high donor concentrations above 3×1020 cm-3 at low process temperatures (< 800 °C) with specific resistivities below 0.5 mΩcm were achieved. The degenerate nature of the sputtered films was verified via temperature-dependent Hall-measurements (300-550 K) revealing negligible change in electron mobility and donor concentration. Scattering at ionized impurities was determined to be the major limiting factor with a minor contribution of polar optical-phonon scattering at high temperatures.
{"title":"Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga-target","authors":"P. Döring, T. Tschirky","doi":"10.35848/1882-0786/ad3367","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3367","url":null,"abstract":"\u0000 In this work, degenerate n-type GaN thin films prepared by co-sputtering from a liquid Ga-target were demonstrated and their low field scattering mechanisms described. Extremely high donor concentrations above 3×1020 cm-3 at low process temperatures (< 800 °C) with specific resistivities below 0.5 mΩcm were achieved. The degenerate nature of the sputtered films was verified via temperature-dependent Hall-measurements (300-550 K) revealing negligible change in electron mobility and donor concentration. Scattering at ionized impurities was determined to be the major limiting factor with a minor contribution of polar optical-phonon scattering at high temperatures.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"26 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140247415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-12DOI: 10.35848/1882-0786/ad32d9
Yuichi Watanabe, K. Kuribara, Ken-ichi Nomura
We discovered that Ag nanowires (AgNWs) on an Au electrode exhibited an anomalous deformation behavior despite a low-temperature environment of 65 °C. Most AgNWs on the Au electrode were deformed after heating. By contrast, AgNWs on the Cr and Ag electrode exhibited a few changes and maintained their initial shapes. The deformation behaviors of AgNWs on metal electrodes have not yet been reported and are currently difficult to explain using known processes such as diffusion and alloying. Nonetheless, they evidently depend on the electrode material. The findings of this study are crucial for the design of AgNW-based electronic devices.
{"title":"Anomalous deformation behavior of Ag nanowires on Au electrode in low-temperature environments","authors":"Yuichi Watanabe, K. Kuribara, Ken-ichi Nomura","doi":"10.35848/1882-0786/ad32d9","DOIUrl":"https://doi.org/10.35848/1882-0786/ad32d9","url":null,"abstract":"\u0000 We discovered that Ag nanowires (AgNWs) on an Au electrode exhibited an anomalous deformation behavior despite a low-temperature environment of 65 °C. Most AgNWs on the Au electrode were deformed after heating. By contrast, AgNWs on the Cr and Ag electrode exhibited a few changes and maintained their initial shapes. The deformation behaviors of AgNWs on metal electrodes have not yet been reported and are currently difficult to explain using known processes such as diffusion and alloying. Nonetheless, they evidently depend on the electrode material. The findings of this study are crucial for the design of AgNW-based electronic devices.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"253 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140249519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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