Pub Date : 2023-10-05DOI: 10.1080/07315171.2023.2238176
Nataly Asul García-Morales, Jose de Jesus Agustin Flores-Cuautle, Carlos Omar González Moran, Daniel Hernández Rivera, Ernesto Suaste-Gómez
AbstractThe dielectric constant and hysteresis loops of BaTiO3 ceramics with and without Pt implants were compared to determine the effect of the implant on the ceramic behavior. Ceramics with 90% relative density and 13.28 µm average grain size were analyzed. The results showed alterations in the ceramic’s coercive field, remanent polarization, and dielectric constant with an implant. The metallic implant affected the internal structure of the BaTiO3 ceramic, which reduced the ferroelectric properties of the material. In principle, these alterations can be seen as drawbacks, but they open new applications. The results provide insights into the real impact of metallic implants on the ferroelectric properties of the samples.Keywords: Barium titanateimplanted piezoelectric ceramicferroelectric hysteresisCurie temperature Disclosure StatementNo potential conflict of interest was reported by the author(s).
{"title":"Effect of a Metallic Implant on the Hysteresis of Ferroelectric BaTiO <sub>3</sub> Ceramics","authors":"Nataly Asul García-Morales, Jose de Jesus Agustin Flores-Cuautle, Carlos Omar González Moran, Daniel Hernández Rivera, Ernesto Suaste-Gómez","doi":"10.1080/07315171.2023.2238176","DOIUrl":"https://doi.org/10.1080/07315171.2023.2238176","url":null,"abstract":"AbstractThe dielectric constant and hysteresis loops of BaTiO3 ceramics with and without Pt implants were compared to determine the effect of the implant on the ceramic behavior. Ceramics with 90% relative density and 13.28 µm average grain size were analyzed. The results showed alterations in the ceramic’s coercive field, remanent polarization, and dielectric constant with an implant. The metallic implant affected the internal structure of the BaTiO3 ceramic, which reduced the ferroelectric properties of the material. In principle, these alterations can be seen as drawbacks, but they open new applications. The results provide insights into the real impact of metallic implants on the ferroelectric properties of the samples.Keywords: Barium titanateimplanted piezoelectric ceramicferroelectric hysteresisCurie temperature Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135482042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-05DOI: 10.1080/07315171.2023.2238178
Wei Ding, Yuhang Wang, Yifeng Tao
AbstractIn this paper, we investigate the lattice thermal conductivity of Janus In2Ge2S6 and In2Ge2S3Se3 bilayers by solving the phonon Boltzmann transport equation using first-principles calculations. We found that this is mainly due to the fact that the frequencies at which larger gaps appear in the intermediate and high frequency optical branches of In2Ge2S3Se3 are smaller than those of In2Ge2S6, which shifts the phonon dispersion curve of In2Ge2S3Se3 downward, which makes the overall phonon group velocity of In2Ge2S3Se3 material smaller than that of In2Ge2Se6 material, and also due to the fact that In2Ge2S3Se3 soft bending in the finite layer thickness coupling and the tight connection of the in-plane acoustic modes, resulting in increased phonon-phonon scattering processes, shorter phonon relaxation times, and larger Grüneisen parameters indicating a stronger anharmonic In2Ge2S3Se3 structure, all these factors combined lead to a lattice thermal conductivity of In2Ge2S3Se3 smaller than the lattice thermal conductivity of In2Ge2S6. At a temperature of 1000 K, the In2Ge2S3Se3 structure has a minimum lattice thermal conductivity of about 0.22 W/mK, and In2Ge2S6 has a minimum lattice thermal conductivity of about 0.4 W/mK. Our results suggest that Janus In2Ge2S6 and In2Ge2S3Se3 bilayers are potential for future thermal management of nanoelectronic devices and thermoelectric devices. two-dimensional materials.Keywords: Two-dimensional materialsFirst-principles calculationsLattice thermal conductivity Disclosure StatementNo potential conflict of interest was reported by the author(s).
{"title":"Study of the Lattice Thermal Conductivity of Janus In <sub>2</sub> Ge <sub>2</sub> S <sub>6</sub> and In <sub>2</sub> Ge <sub>2</sub> S <sub>3</sub> Se <sub>3</sub> Bilayers","authors":"Wei Ding, Yuhang Wang, Yifeng Tao","doi":"10.1080/07315171.2023.2238178","DOIUrl":"https://doi.org/10.1080/07315171.2023.2238178","url":null,"abstract":"AbstractIn this paper, we investigate the lattice thermal conductivity of Janus In2Ge2S6 and In2Ge2S3Se3 bilayers by solving the phonon Boltzmann transport equation using first-principles calculations. We found that this is mainly due to the fact that the frequencies at which larger gaps appear in the intermediate and high frequency optical branches of In2Ge2S3Se3 are smaller than those of In2Ge2S6, which shifts the phonon dispersion curve of In2Ge2S3Se3 downward, which makes the overall phonon group velocity of In2Ge2S3Se3 material smaller than that of In2Ge2Se6 material, and also due to the fact that In2Ge2S3Se3 soft bending in the finite layer thickness coupling and the tight connection of the in-plane acoustic modes, resulting in increased phonon-phonon scattering processes, shorter phonon relaxation times, and larger Grüneisen parameters indicating a stronger anharmonic In2Ge2S3Se3 structure, all these factors combined lead to a lattice thermal conductivity of In2Ge2S3Se3 smaller than the lattice thermal conductivity of In2Ge2S6. At a temperature of 1000 K, the In2Ge2S3Se3 structure has a minimum lattice thermal conductivity of about 0.22 W/mK, and In2Ge2S6 has a minimum lattice thermal conductivity of about 0.4 W/mK. Our results suggest that Janus In2Ge2S6 and In2Ge2S3Se3 bilayers are potential for future thermal management of nanoelectronic devices and thermoelectric devices. two-dimensional materials.Keywords: Two-dimensional materialsFirst-principles calculationsLattice thermal conductivity Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135482623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-05DOI: 10.1080/07315171.2023.2238173
Hitesh Kumar, Pratiksha Agnihotri, Ratnamala Chatterjee, Radheshyam Rai
AbstractIn this article, we examined the electromechanical behavior of Sn-substituted Lead Bismuth Zirconate Titanate thin films (PBZST thin films). Using the pulsed laser deposition technique (PLD), the thin film growth parameters of bismuth-doped PZST close to MPB were adjusted by varying the ∼(Zr, Sn)/Ti ratios. Thin films (∼250 nm) with the stoichiometric formula Pb0.985Bi0.01(Zr0.7Sn0.3)xTi1 – xO3, (x = 0.935, 0.940, 0.945, and 0.950) were grown on a Pt/TiO2/SiO2/Si substrate using PLD technique at optimized conditions. P-E loop confirms that MPB is near x = 0.945, and further PFM measurements also confirmed the same. Analyzing the PFM phase and amplitude hysteresis loops, local piezo-electric coefficient and remnant strain values were computed as d33 = 330 pm/V and 0.33 at the MPB composition (x = 0.945).Keywords: Electromechanicalceramicsenergy storageMPBpulsed laser depositionsubstrate Disclosure StatementNo potential conflict of interest was reported by the author(s).
{"title":"Optimization of MPB for Sn Substituted Lead Bismuth Zirconate Titanate Thin Films by the Electromechanical Behavior Related to Energy Storage Capacity","authors":"Hitesh Kumar, Pratiksha Agnihotri, Ratnamala Chatterjee, Radheshyam Rai","doi":"10.1080/07315171.2023.2238173","DOIUrl":"https://doi.org/10.1080/07315171.2023.2238173","url":null,"abstract":"AbstractIn this article, we examined the electromechanical behavior of Sn-substituted Lead Bismuth Zirconate Titanate thin films (PBZST thin films). Using the pulsed laser deposition technique (PLD), the thin film growth parameters of bismuth-doped PZST close to MPB were adjusted by varying the ∼(Zr, Sn)/Ti ratios. Thin films (∼250 nm) with the stoichiometric formula Pb0.985Bi0.01(Zr0.7Sn0.3)xTi1 – xO3, (x = 0.935, 0.940, 0.945, and 0.950) were grown on a Pt/TiO2/SiO2/Si substrate using PLD technique at optimized conditions. P-E loop confirms that MPB is near x = 0.945, and further PFM measurements also confirmed the same. Analyzing the PFM phase and amplitude hysteresis loops, local piezo-electric coefficient and remnant strain values were computed as d33 = 330 pm/V and 0.33 at the MPB composition (x = 0.945).Keywords: Electromechanicalceramicsenergy storageMPBpulsed laser depositionsubstrate Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134947955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-04DOI: 10.1080/07315171.2023.2189851
Pratiksha Agnihotri, Abhijeet Kumar, R. Rai, Budhendra Singh
Abstract Multiferroic ceramic composites of (Ba0.7Gd0.3MoxFe12-xO19 were prepared by using the solid-state reaction method with mol% fractions of x = 0.02, The preliminary structural studies carried out by X-ray diffraction at room temperature. It reveals that the samples have a hexagonal structure ferrite phase. The impurity phase of x-Fe2O3 appear at 32 ∼ 34 degree. Debye–Scherer and Williamson–Hall method were used to analysis for peak broadening Ba0.7Gd0.3MoxFe12-xO19 (where x = 0.02). Dielectric graphs show that curie temperature shifted towards the high temperature with increasing the frequency. the dielectric transitions at 200–300 °C.
{"title":"Investigation of Structural and Dielectric Behavior of Ba0.7Gd0.3MoxFe12-xO19 (Where x = 0.02) Hexaferrite Ceramics","authors":"Pratiksha Agnihotri, Abhijeet Kumar, R. Rai, Budhendra Singh","doi":"10.1080/07315171.2023.2189851","DOIUrl":"https://doi.org/10.1080/07315171.2023.2189851","url":null,"abstract":"Abstract Multiferroic ceramic composites of (Ba0.7Gd0.3MoxFe12-xO19 were prepared by using the solid-state reaction method with mol% fractions of x = 0.02, The preliminary structural studies carried out by X-ray diffraction at room temperature. It reveals that the samples have a hexagonal structure ferrite phase. The impurity phase of x-Fe2O3 appear at 32 ∼ 34 degree. Debye–Scherer and Williamson–Hall method were used to analysis for peak broadening Ba0.7Gd0.3MoxFe12-xO19 (where x = 0.02). Dielectric graphs show that curie temperature shifted towards the high temperature with increasing the frequency. the dielectric transitions at 200–300 °C.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85216910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-04DOI: 10.1080/07315171.2023.2189849
Z. T. Naik, B. H. Rudramadevi
Abstract A trivalent rare earth ion Holmium doped zinc magnesium lithium fluoroborate (ZMLB) glasses with the composition of 10ZnO-10MgO-20LiF-(60-x)B2O3-xHo2O3 (where x = 0, 0.1, 0.3, 0.5 and 1 mol%) were prepared by a well-known melt quenching procedure. The produced glass samples structural, optical, emission and decay curve characteristics have been investigated. From the X-ray diffraction investigation, it is confirmed all the produced glasses possess amorphous nature. The borate-oxygen and vibration bonds were noticed by using Fourier transform infrared analysis. From the ultraviolet-visible absorption studies, the produced glasses absorption peaks were noticed and optical energy band gap values also identified by using Tauc’s relation. Under excitation with 456 nm, the Ho3+ activated ZMLB glasses luminescence spectra consist of three luminescence bands positioned at 550, 677 and 764 nm were corresponding electronic transitions are 5S2 + 5F4 → 5I8, 5F5→ 5I8 and 5F4→ 5I7, respectively. From all these emission bands the prominent emission band observed at 550 nm (green). For the Ho3+ activated ZMLB glasses, the lifetimes were decreased with the enhance of Ho3+ doping content owing to energy transfer in resonance form in between Ho3+ ions. From emission spectra, the CCT and CIE coordinates were estimated, and the CIE values are pointed greenish-yellow area in CIE image. Therefore, all these findings convey that the current zinc magnesium lithium fluoroborate glasses conceivably significant candidate for green display and lighting applications.
{"title":"Photoluminescence Properties of Ho3+-doped Fluoroborate Optical Glasses","authors":"Z. T. Naik, B. H. Rudramadevi","doi":"10.1080/07315171.2023.2189849","DOIUrl":"https://doi.org/10.1080/07315171.2023.2189849","url":null,"abstract":"Abstract A trivalent rare earth ion Holmium doped zinc magnesium lithium fluoroborate (ZMLB) glasses with the composition of 10ZnO-10MgO-20LiF-(60-x)B2O3-xHo2O3 (where x = 0, 0.1, 0.3, 0.5 and 1 mol%) were prepared by a well-known melt quenching procedure. The produced glass samples structural, optical, emission and decay curve characteristics have been investigated. From the X-ray diffraction investigation, it is confirmed all the produced glasses possess amorphous nature. The borate-oxygen and vibration bonds were noticed by using Fourier transform infrared analysis. From the ultraviolet-visible absorption studies, the produced glasses absorption peaks were noticed and optical energy band gap values also identified by using Tauc’s relation. Under excitation with 456 nm, the Ho3+ activated ZMLB glasses luminescence spectra consist of three luminescence bands positioned at 550, 677 and 764 nm were corresponding electronic transitions are 5S2 + 5F4 → 5I8, 5F5→ 5I8 and 5F4→ 5I7, respectively. From all these emission bands the prominent emission band observed at 550 nm (green). For the Ho3+ activated ZMLB glasses, the lifetimes were decreased with the enhance of Ho3+ doping content owing to energy transfer in resonance form in between Ho3+ ions. From emission spectra, the CCT and CIE coordinates were estimated, and the CIE values are pointed greenish-yellow area in CIE image. Therefore, all these findings convey that the current zinc magnesium lithium fluoroborate glasses conceivably significant candidate for green display and lighting applications.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90869195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract This work develops a high-frequency high-sensitivity inlaid cylindrical hydroacoustic transducer by enhancing the electromechanical coupling coefficient, amplifying stress, and adopting circumferential inlaid techniques. Equivalent circuit and finite element simulation methods were used to determine the optimum parameters of the unit, then the transducer was fabricated. Tests show that the resonant frequency of every array unit was 220 kHz. The maximum emission voltage response and reception sensitivity were respectively about 172 dB and −177 dB, with emission and reception bandwidths both about 40 kHz at 3 dB loss. The horizontal and vertical beamwidths were 15° and 4° for each unit respectively.
{"title":"High-frequency inlaid cylindrical piezoelectric transducer for high-sensitivity acoustics","authors":"Tian Rong, Qinghua Luo, Chenxu Wang, Yingchun Li, Guangle Jia, Zhaoxiang Yu","doi":"10.1080/07315171.2023.2189852","DOIUrl":"https://doi.org/10.1080/07315171.2023.2189852","url":null,"abstract":"Abstract This work develops a high-frequency high-sensitivity inlaid cylindrical hydroacoustic transducer by enhancing the electromechanical coupling coefficient, amplifying stress, and adopting circumferential inlaid techniques. Equivalent circuit and finite element simulation methods were used to determine the optimum parameters of the unit, then the transducer was fabricated. Tests show that the resonant frequency of every array unit was 220 kHz. The maximum emission voltage response and reception sensitivity were respectively about 172 dB and −177 dB, with emission and reception bandwidths both about 40 kHz at 3 dB loss. The horizontal and vertical beamwidths were 15° and 4° for each unit respectively.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88375948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-04DOI: 10.1080/07315171.2023.2189853
Junlin Yang, Ye Chen, Jinbo Yang, Chaoqun Xiang, Liang Li
Abstract This paper proposes a new type of circular ring traveling wave linear ultrasonic motor with incomplete teeth. The motor’s movable slider is pressed against the end face of the tooth structure on the outer surface of the circular ring vibrator under a certain pre-pressure, four piezoelectric ceramic plates are evenly distributed at 90° intervals on the inner side of the circular structure, and four sets of driving teeth are arranged at 45° intervals from the position of the piezoelectric ceramic plates.When the motor is in operation, only one driving tooth works, and the life of the ultrasonic motor can be increased by rotating the different working teeth. The motor operates in two in-plane third-order bending modes that are orthogonal to each other at the same frequency. The dynamic design and simulation of the vibrator was carried out using ANSYS finite element software to analyze the effect of the structure on the mode. The principle prototype was fabricated, and the operating mode of the vibrator was measured using a laser Doppler vibrometer (LDV), and the vibration characteristics and output performance of the prototype were tested. Experimental results show that the motor runs smoothly at the excitation voltage of 240 V peak-to-peak, the excitation frequency of 30.459 kHz and the pre-pressure of 0.6 N, with the maximum output force of 90 mN and the motor no-load speed of 102 mm/s.
{"title":"A ring-type traveling wave linear ultrasonic motor based on in-plane third-order modal vibration","authors":"Junlin Yang, Ye Chen, Jinbo Yang, Chaoqun Xiang, Liang Li","doi":"10.1080/07315171.2023.2189853","DOIUrl":"https://doi.org/10.1080/07315171.2023.2189853","url":null,"abstract":"Abstract This paper proposes a new type of circular ring traveling wave linear ultrasonic motor with incomplete teeth. The motor’s movable slider is pressed against the end face of the tooth structure on the outer surface of the circular ring vibrator under a certain pre-pressure, four piezoelectric ceramic plates are evenly distributed at 90° intervals on the inner side of the circular structure, and four sets of driving teeth are arranged at 45° intervals from the position of the piezoelectric ceramic plates.When the motor is in operation, only one driving tooth works, and the life of the ultrasonic motor can be increased by rotating the different working teeth. The motor operates in two in-plane third-order bending modes that are orthogonal to each other at the same frequency. The dynamic design and simulation of the vibrator was carried out using ANSYS finite element software to analyze the effect of the structure on the mode. The principle prototype was fabricated, and the operating mode of the vibrator was measured using a laser Doppler vibrometer (LDV), and the vibration characteristics and output performance of the prototype were tested. Experimental results show that the motor runs smoothly at the excitation voltage of 240 V peak-to-peak, the excitation frequency of 30.459 kHz and the pre-pressure of 0.6 N, with the maximum output force of 90 mN and the motor no-load speed of 102 mm/s.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85401523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-04DOI: 10.1080/07315171.2023.2189848
Tian Rong, Chenxu Wang
Abstract As the demand for high-performance hydrophones for marine communication systems grows, this paper develops a high-frequency unfilled layered symmetrical piezoelectric material with high effective electromechanical coupling coefficient. The vibration mode of piezoelectric material is converted into vibration mode of the piezoelectric pillar to improve the effective electromechanical coupling coefficient of the material. The material is determined by the equivalent circuit method and ANSYS finite element simulation method. Test results show that the resonant frequency is 117.8 kHz and the effective electromechanical coupling coefficient is 0.67, which shows that the developed material has a good electromechanical conversion performance.
{"title":"Research on a high-frequency unfilled layered symmetrical piezoelectric material with a high effective electromechanical coupling coefficient","authors":"Tian Rong, Chenxu Wang","doi":"10.1080/07315171.2023.2189848","DOIUrl":"https://doi.org/10.1080/07315171.2023.2189848","url":null,"abstract":"Abstract As the demand for high-performance hydrophones for marine communication systems grows, this paper develops a high-frequency unfilled layered symmetrical piezoelectric material with high effective electromechanical coupling coefficient. The vibration mode of piezoelectric material is converted into vibration mode of the piezoelectric pillar to improve the effective electromechanical coupling coefficient of the material. The material is determined by the equivalent circuit method and ANSYS finite element simulation method. Test results show that the resonant frequency is 117.8 kHz and the effective electromechanical coupling coefficient is 0.67, which shows that the developed material has a good electromechanical conversion performance.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84988870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-04DOI: 10.1080/07315171.2023.2189850
Caixia Guo, Wenlong Jiao, Tianxing Wang
Abstract Using a combination of non-equilibrium Green’s function (NEGF) and density functional theory (DFT), the electronic structures and transport characteristics of N-doped GeSe monolayer were investigated systematically. The calculated band structures illustrated that the doping of N atoms changed GeSe monolayer from a semiconductor to a metal. Further, a clear negative differential resistance behavior (NDR) was found in the voltage-current curves of the N-doped GeSe based devices. Moreover, the current peak-to-valley ratio (PVR) varied with the doping concentration of N atoms. As the doping concentration decreased, the peak of NDR shifted toward the millivolt region. Especially, the NDR behavior with a PVR up to 103 entered the mV bias region when the doping concentration was reduced to 0.69%. These results provide a novel approach to design the low power nanodevice based on the GeSe monolayer.
{"title":"Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer","authors":"Caixia Guo, Wenlong Jiao, Tianxing Wang","doi":"10.1080/07315171.2023.2189850","DOIUrl":"https://doi.org/10.1080/07315171.2023.2189850","url":null,"abstract":"Abstract Using a combination of non-equilibrium Green’s function (NEGF) and density functional theory (DFT), the electronic structures and transport characteristics of N-doped GeSe monolayer were investigated systematically. The calculated band structures illustrated that the doping of N atoms changed GeSe monolayer from a semiconductor to a metal. Further, a clear negative differential resistance behavior (NDR) was found in the voltage-current curves of the N-doped GeSe based devices. Moreover, the current peak-to-valley ratio (PVR) varied with the doping concentration of N atoms. As the doping concentration decreased, the peak of NDR shifted toward the millivolt region. Especially, the NDR behavior with a PVR up to 103 entered the mV bias region when the doping concentration was reduced to 0.69%. These results provide a novel approach to design the low power nanodevice based on the GeSe monolayer.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87408655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-02DOI: 10.1080/07315171.2022.2122412
G. Kaur, Pratiksha, Mamta Shandilya, Sahil Kumar
Abstract KNN/P(VDF-HFP) based nanofiber composite was developed by using the electrospinning technique. The significant enhanced value of β-phase content on addition of KNN is evident from the XRD and FTIR spectrum. FE-SEM micrographs reveal the formation of dense and compact nanofillers and their embedment within polymer matrix results in homogenous, smooth and uniform nanofibers without any agglomeration. The piezoelectric response of the nanofiber mat was improved by enhancing the induced charge of P(VDF-HFP) and β-phase content on incorporating KNN within the matrix, which holds great potential to improve the self-power generation performance of piezoelectric nano-generators.
{"title":"Synergistic effect of self-poled fibre based flexible lead-free KNN/P(VDF-HFP) nanofiber mat for scavenging piezoelectric energy","authors":"G. Kaur, Pratiksha, Mamta Shandilya, Sahil Kumar","doi":"10.1080/07315171.2022.2122412","DOIUrl":"https://doi.org/10.1080/07315171.2022.2122412","url":null,"abstract":"Abstract KNN/P(VDF-HFP) based nanofiber composite was developed by using the electrospinning technique. The significant enhanced value of β-phase content on addition of KNN is evident from the XRD and FTIR spectrum. FE-SEM micrographs reveal the formation of dense and compact nanofillers and their embedment within polymer matrix results in homogenous, smooth and uniform nanofibers without any agglomeration. The piezoelectric response of the nanofiber mat was improved by enhancing the induced charge of P(VDF-HFP) and β-phase content on incorporating KNN within the matrix, which holds great potential to improve the self-power generation performance of piezoelectric nano-generators.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86297801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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