Pub Date : 2022-11-02DOI: 10.1080/07315171.2022.2122583
G. Nagesh, B. Rajesh Babu, K. V. Ramesh
Abstract A series of combustion assisted low-temperature neodymium substituted Ni–Zn–Fe (NZF) nanoparticles were synthesized to unravel the impact on functional behavior of NZF due to the presence of larger Nd ions. The nanopowders were structurally evaluated with X-ray diffraction and infrared spectroscopy measurements without further heat treatment. X-ray diffraction clearly evident the monophasic nature of all the samples and solubility of Nd ions in the spinel unit cell. The average crystallite size from Scherrer and Williamson–Hall method are found below 30 and 20 nm for all the samples, respectively. A distinct shift was observed in most intense peak (3 1 1) suggesting the adjustment among interionic distances to accommodate larger ions. The microstructure, morphology was evaluated from SEM measurements. Magnetic measurements at room temperature show a dramatic change in magnetization, improvement in soft-magnetic nature with low coercivity behavior with Nd substitution. The variation of resistance with respect to humidity conditions suggested that these materials are potentially suitable for resistive humidity sensor applications.
{"title":"Structural, Magnetic Evaluation of Neodymium Doped Nickel-Zinc-Iron Soft Spinel Metal Oxides for Humidity Sensor Applications","authors":"G. Nagesh, B. Rajesh Babu, K. V. Ramesh","doi":"10.1080/07315171.2022.2122583","DOIUrl":"https://doi.org/10.1080/07315171.2022.2122583","url":null,"abstract":"Abstract A series of combustion assisted low-temperature neodymium substituted Ni–Zn–Fe (NZF) nanoparticles were synthesized to unravel the impact on functional behavior of NZF due to the presence of larger Nd ions. The nanopowders were structurally evaluated with X-ray diffraction and infrared spectroscopy measurements without further heat treatment. X-ray diffraction clearly evident the monophasic nature of all the samples and solubility of Nd ions in the spinel unit cell. The average crystallite size from Scherrer and Williamson–Hall method are found below 30 and 20 nm for all the samples, respectively. A distinct shift was observed in most intense peak (3 1 1) suggesting the adjustment among interionic distances to accommodate larger ions. The microstructure, morphology was evaluated from SEM measurements. Magnetic measurements at room temperature show a dramatic change in magnetization, improvement in soft-magnetic nature with low coercivity behavior with Nd substitution. The variation of resistance with respect to humidity conditions suggested that these materials are potentially suitable for resistive humidity sensor applications.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84141512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-02DOI: 10.1080/07315171.2022.2076470
A. D. Kanwate, V. R. Panse, E. U. Masumdar, E. Palupi, R. Umam, Ardimas, G. Antarnusa
Abstract The CdSe thin film was deposited on glass substrate by homemade spray pyrolysis technique at substrate temperature 3000C. Further the film was characterized through X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Energy dispersive X-ray analysis (EDAX), UV-Visible optical spectroscopy and Electrical. The XRD pattern of CdSe film shows polycrystalline hexagonal crystal structure with average crystalline size of the film was 16.3 nm. The SEM micrograph shows the film was uniform, adherent, without pin-hole and crack free. From EDAX analysis conform that the presence of Cd and Se in prepared film with elemental stoichiometry of Cd and Se was 49.30% and 50.70%, respectively. The optical band gap was direct band gap and it was found 1.78 eV. The electrical resistivity of the film at room temperature was 6.9 × 106 Ωcm.
{"title":"CdSe thin films prepared by the homemade and cost effective spray pyrolysis technique","authors":"A. D. Kanwate, V. R. Panse, E. U. Masumdar, E. Palupi, R. Umam, Ardimas, G. Antarnusa","doi":"10.1080/07315171.2022.2076470","DOIUrl":"https://doi.org/10.1080/07315171.2022.2076470","url":null,"abstract":"Abstract The CdSe thin film was deposited on glass substrate by homemade spray pyrolysis technique at substrate temperature 3000C. Further the film was characterized through X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Energy dispersive X-ray analysis (EDAX), UV-Visible optical spectroscopy and Electrical. The XRD pattern of CdSe film shows polycrystalline hexagonal crystal structure with average crystalline size of the film was 16.3 nm. The SEM micrograph shows the film was uniform, adherent, without pin-hole and crack free. From EDAX analysis conform that the presence of Cd and Se in prepared film with elemental stoichiometry of Cd and Se was 49.30% and 50.70%, respectively. The optical band gap was direct band gap and it was found 1.78 eV. The electrical resistivity of the film at room temperature was 6.9 × 106 Ωcm.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91023772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-02DOI: 10.1080/07315171.2022.2122414
Xianghua Chen, Qun Li, Chunguang Wang
Abstract The service life of piezoelectric devices is significantly affected by the electric fatigue load. The randomness of loads and nonuniformity of material properties caused by random distribution of internal defects in piezoelectric body will lead to the dispersion of the failure life of piezoelectric devices. Predicting failure probability of piezoelectric materials under electric fatigue load is essential for the reliability and life prediction of piezoelectric structures and devices. In this paper, the initial damage of piezoelectric materials is modeled as a random variable. Based on the methods of probability theory and statistics, the failure probability assessment model of piezoelectric materials under electric fatigue load is proposed. The probability density function of initial damage is obtained by observation and statistics of initial defect area. The failure probability assessment model of piezoelectric materials under electric fatigue load can be obtained by probability theory and integral method. Meanwhile, the failure probability evolution of piezoelectric materials under various electric fatigue loads is considered. The results show that the failure life and dispersion of piezoelectric materials is significantly affected by electric fatigue load, and the variation of failure probability under various electric loads is similar. Based on the proposed failure probability assessment models, the randomness of the electric load and randomly distributed initial defects of materials are considered in the damage evolution and performance prediction of piezoelectric structures, which is an important supplement to the reliability prediction and application of piezoelectric devices.
{"title":"The failure probability assessment model of piezoelectric materials under electric fatigue load","authors":"Xianghua Chen, Qun Li, Chunguang Wang","doi":"10.1080/07315171.2022.2122414","DOIUrl":"https://doi.org/10.1080/07315171.2022.2122414","url":null,"abstract":"Abstract The service life of piezoelectric devices is significantly affected by the electric fatigue load. The randomness of loads and nonuniformity of material properties caused by random distribution of internal defects in piezoelectric body will lead to the dispersion of the failure life of piezoelectric devices. Predicting failure probability of piezoelectric materials under electric fatigue load is essential for the reliability and life prediction of piezoelectric structures and devices. In this paper, the initial damage of piezoelectric materials is modeled as a random variable. Based on the methods of probability theory and statistics, the failure probability assessment model of piezoelectric materials under electric fatigue load is proposed. The probability density function of initial damage is obtained by observation and statistics of initial defect area. The failure probability assessment model of piezoelectric materials under electric fatigue load can be obtained by probability theory and integral method. Meanwhile, the failure probability evolution of piezoelectric materials under various electric fatigue loads is considered. The results show that the failure life and dispersion of piezoelectric materials is significantly affected by electric fatigue load, and the variation of failure probability under various electric loads is similar. Based on the proposed failure probability assessment models, the randomness of the electric load and randomly distributed initial defects of materials are considered in the damage evolution and performance prediction of piezoelectric structures, which is an important supplement to the reliability prediction and application of piezoelectric devices.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77570452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-02DOI: 10.1080/07315171.2022.2122415
Venkatraj Athikesavan, S. Bhuvana, G. Thilakavathi
Abstract The polycrystalline ternary ferroelectric ceramic of PMN-PYN-PT (PMN = PbMg1/3Nb2/3O3, PYN = PbYbl/3Nb2/3O3, PT = PbTiO3) were synthesized by conventional solid state reaction technique. The structural, electrical and energy-storage properties of the ceramic were investigated. X-ray diffraction studies reveal that the ceramic has a coexistence of both tetragonal and rhombohedral phases. Dielectric studies of the sintered samples were studied as a function of temperature ranging from room temperature to 400 °C and in the wide frequency range of 1–50 kHz which shows good relaxor behavior. P-E hysteresis loops for the ceramic confirm good ferroelectric properties, exhibiting at (Pr ∼ 17.5 µC cm−2, Ec ∼ 36.5 and Pm ∼ 20.3) were obtained for PMN-PYN-PT. Energy storage density (W) of 0.13 Jcm−3 was achieved at 50 kV/cm1. The optimum piezoelectric coefficient and piezoelectric voltage coefficient (d33 ∼ 412 pC/N, g33 ∼1.6) measured on the poled sample for PMN-PYN-PT, respectively. From these analyses, the reported ceramic is a promising candidate for energy-storage capacitor applications.
{"title":"Structural and Electrical Properties of Pb (Mg1 / 3Nb2 / 3) O3-Pb (Yb1 / 2Nb1 / 2) O3-PbTiO3 Ternary Ceramic for Energy Storage Application","authors":"Venkatraj Athikesavan, S. Bhuvana, G. Thilakavathi","doi":"10.1080/07315171.2022.2122415","DOIUrl":"https://doi.org/10.1080/07315171.2022.2122415","url":null,"abstract":"Abstract The polycrystalline ternary ferroelectric ceramic of PMN-PYN-PT (PMN = PbMg1/3Nb2/3O3, PYN = PbYbl/3Nb2/3O3, PT = PbTiO3) were synthesized by conventional solid state reaction technique. The structural, electrical and energy-storage properties of the ceramic were investigated. X-ray diffraction studies reveal that the ceramic has a coexistence of both tetragonal and rhombohedral phases. Dielectric studies of the sintered samples were studied as a function of temperature ranging from room temperature to 400 °C and in the wide frequency range of 1–50 kHz which shows good relaxor behavior. P-E hysteresis loops for the ceramic confirm good ferroelectric properties, exhibiting at (Pr ∼ 17.5 µC cm−2, Ec ∼ 36.5 and Pm ∼ 20.3) were obtained for PMN-PYN-PT. Energy storage density (W) of 0.13 Jcm−3 was achieved at 50 kV/cm1. The optimum piezoelectric coefficient and piezoelectric voltage coefficient (d33 ∼ 412 pC/N, g33 ∼1.6) measured on the poled sample for PMN-PYN-PT, respectively. From these analyses, the reported ceramic is a promising candidate for energy-storage capacitor applications.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73368535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-04DOI: 10.1080/07315171.2022.2076467
Yang Zhang, Qing-Wen Dai, Jiarui Huang, J. Zhai
Abstract Microwave sintering has been known as the effective method to prepare ceramics. In this study, the microwave sintering method was used to synthesize 0.96(K0.5Na0.5)0.95Li0.05Nb0.93Sb0.07O3-0.04CaZrO3 ceramics. The effect of holding time on the properties of ceramics was investigated. With the holding time of 30 min, the excellent piezoelectric properties (d 33 = 286 pC/N) can be achieved.
{"title":"Effect of microwave sintering on KNN-based lead free ceramics","authors":"Yang Zhang, Qing-Wen Dai, Jiarui Huang, J. Zhai","doi":"10.1080/07315171.2022.2076467","DOIUrl":"https://doi.org/10.1080/07315171.2022.2076467","url":null,"abstract":"Abstract Microwave sintering has been known as the effective method to prepare ceramics. In this study, the microwave sintering method was used to synthesize 0.96(K0.5Na0.5)0.95Li0.05Nb0.93Sb0.07O3-0.04CaZrO3 ceramics. The effect of holding time on the properties of ceramics was investigated. With the holding time of 30 min, the excellent piezoelectric properties (d 33 = 286 pC/N) can be achieved.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73397445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-04DOI: 10.1080/07315171.2022.2076471
Taotao Hu, Yu Li, Peng Tu
Abstract The shock wave generates the strain gradient and consequent electric polarization in samples due to the flexoelectric effect during the impact process. At present, some scholars have studied the influence law of different impact velocities, but the influence of different thickness and cross-sectional area of samples on flexoelectric effect is still blank. In this letter, we have studied the voltage variation of barium titanate samples with different thickness and cross-sectional area under a certain impact velocity. The results show that the maximum voltage value caused by flexoelectric effect increases as the thickness increases, which is basically in positive proportion; it decreases with the increase of diameter, which is in inverse proportion. This research will lay a theoretical foundation for the fabrication of flexoelectricity sensor.
{"title":"Influence of sample thickness and cross-sectional area on flexoelectric effect under one-dimensional impact","authors":"Taotao Hu, Yu Li, Peng Tu","doi":"10.1080/07315171.2022.2076471","DOIUrl":"https://doi.org/10.1080/07315171.2022.2076471","url":null,"abstract":"Abstract The shock wave generates the strain gradient and consequent electric polarization in samples due to the flexoelectric effect during the impact process. At present, some scholars have studied the influence law of different impact velocities, but the influence of different thickness and cross-sectional area of samples on flexoelectric effect is still blank. In this letter, we have studied the voltage variation of barium titanate samples with different thickness and cross-sectional area under a certain impact velocity. The results show that the maximum voltage value caused by flexoelectric effect increases as the thickness increases, which is basically in positive proportion; it decreases with the increase of diameter, which is in inverse proportion. This research will lay a theoretical foundation for the fabrication of flexoelectricity sensor.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88959451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-04DOI: 10.1080/07315171.2022.2076465
H. Nguyen, M. T. Chau, Thi Bich Thao Phan, A. Milinskiy, S. Baryshnikov
Abstract The study suggests a simple approach to improve phase transition properties and ferroelectricity of a typical ferroelectric metal-organic framework of [NH4][Zn(HCOO)3] (AmZn) using silicon dioxides nanoparticles (nSiO2). It is shown that the first-order transition type of AmZn is not changed under the influence of nSiO2. Moreover, the phase transition temperature of AmZn significantly increased with increasing the nSiO2 content from 0 to 40 wt%. Besides, the addition of small nSiO2 content (< 11%) led to rising spontaneous saturation and remnant polarizations. The study also indicated difficulties in obtaining the saturation P-E loops at high nSiO2 content.
{"title":"Phase transition and ferroelectricity of composites based on ferroelectric metal-organic framework of [NH4][Zn(HCOO)3]","authors":"H. Nguyen, M. T. Chau, Thi Bich Thao Phan, A. Milinskiy, S. Baryshnikov","doi":"10.1080/07315171.2022.2076465","DOIUrl":"https://doi.org/10.1080/07315171.2022.2076465","url":null,"abstract":"Abstract The study suggests a simple approach to improve phase transition properties and ferroelectricity of a typical ferroelectric metal-organic framework of [NH4][Zn(HCOO)3] (AmZn) using silicon dioxides nanoparticles (nSiO2). It is shown that the first-order transition type of AmZn is not changed under the influence of nSiO2. Moreover, the phase transition temperature of AmZn significantly increased with increasing the nSiO2 content from 0 to 40 wt%. Besides, the addition of small nSiO2 content (< 11%) led to rising spontaneous saturation and remnant polarizations. The study also indicated difficulties in obtaining the saturation P-E loops at high nSiO2 content.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77280725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-04DOI: 10.1080/07315171.2022.2076464
C. Salma, B. H. Rudramadevi
Abstract Transparent polyvinyl alcohol (PVA)/polyvinylpyrrolidone (PVP) and various concentrations of Sm3+ ion-doped PVA/PVP blend-polymer films were prepared using the solution cast method. The structural properties were studied by using XRD and FTIR. Optical UV-Vis, photoluminescence, and decay studies were carried out for prepared PVA/PVP blend polymer films. The XRD confirms the structural change in PVA/PVP blend-polymer with the doping of Sm3+ ion. From FTIR, Sm3+ ion forms the complex formation within the PVA/PVP polymer structure. The allowed band gap decreased from 5 to 4.6 eV, and the refractive index increased from 2.4 to 2.45, increasing Sm3+ ion concentration. From the energy band gap, the bonding parameters ( and δ) were calculated to find the covalent/ionic bond nature of the prepared polymer films. The emission spectra were measured for Sm3+: PVA/PVP with the excitation of 402 nm wavelength (6H5/2→4F7/2). 4G5/2→ 6H7/2 shows maximum intensity at 0.4 wt % of Sm3+, and beyond concentration, quenching was noticed. It is observed from the decay curve that the lifetime of PVA/PVP samples doped with Sm3+ at all concentrations decreases with the increase of Sm3+ ion concentration. It was noticed from CIE chromaticity that Sm3+: PVA/PVP blend polymer films are more appropriate for enhancing reddish-orange photonic emission. Based on the above results, Sm3+: PVA/PVP blend polymer films are suitable for reddish-orange luminescent applications.
{"title":"Structural and photoluminescence properties of a trivalent rare earth Sm ion-doped PVA/PVP blend polymer films","authors":"C. Salma, B. H. Rudramadevi","doi":"10.1080/07315171.2022.2076464","DOIUrl":"https://doi.org/10.1080/07315171.2022.2076464","url":null,"abstract":"Abstract Transparent polyvinyl alcohol (PVA)/polyvinylpyrrolidone (PVP) and various concentrations of Sm3+ ion-doped PVA/PVP blend-polymer films were prepared using the solution cast method. The structural properties were studied by using XRD and FTIR. Optical UV-Vis, photoluminescence, and decay studies were carried out for prepared PVA/PVP blend polymer films. The XRD confirms the structural change in PVA/PVP blend-polymer with the doping of Sm3+ ion. From FTIR, Sm3+ ion forms the complex formation within the PVA/PVP polymer structure. The allowed band gap decreased from 5 to 4.6 eV, and the refractive index increased from 2.4 to 2.45, increasing Sm3+ ion concentration. From the energy band gap, the bonding parameters ( and δ) were calculated to find the covalent/ionic bond nature of the prepared polymer films. The emission spectra were measured for Sm3+: PVA/PVP with the excitation of 402 nm wavelength (6H5/2→4F7/2). 4G5/2→ 6H7/2 shows maximum intensity at 0.4 wt % of Sm3+, and beyond concentration, quenching was noticed. It is observed from the decay curve that the lifetime of PVA/PVP samples doped with Sm3+ at all concentrations decreases with the increase of Sm3+ ion concentration. It was noticed from CIE chromaticity that Sm3+: PVA/PVP blend polymer films are more appropriate for enhancing reddish-orange photonic emission. Based on the above results, Sm3+: PVA/PVP blend polymer films are suitable for reddish-orange luminescent applications.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2022-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77765057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-01DOI: 10.1080/07315171.2021.1971007
Shuai Ju, Haifeng Zhang, Jia-shi Yang
Abstract We study the extension of composite fibers with piezoelectric dielectric layers and nonpiezoelectric semiconductor layers. A theoretical analysis is performed using the one-dimensional macroscopic model of piezoelectric semiconductor fibers. An analytical solution is obtained for a fiber with a uniform nonpiezoelectric semiconductor layer and piecewise uniform piezoelectric dielectric layers. Numerical results show that an electric potential barrier forms near the junction between the piecewise uniform piezoelectric layers. The potential barrier depends on the extensional stress. It may be used to manipulate the electrical behaviors such as the conduction in the fiber mechanically and thus has potential applications in piezotronics.
{"title":"Stress induced potential barriers in composite piezoelectric semiconductor fibers in extension","authors":"Shuai Ju, Haifeng Zhang, Jia-shi Yang","doi":"10.1080/07315171.2021.1971007","DOIUrl":"https://doi.org/10.1080/07315171.2021.1971007","url":null,"abstract":"Abstract We study the extension of composite fibers with piezoelectric dielectric layers and nonpiezoelectric semiconductor layers. A theoretical analysis is performed using the one-dimensional macroscopic model of piezoelectric semiconductor fibers. An analytical solution is obtained for a fiber with a uniform nonpiezoelectric semiconductor layer and piecewise uniform piezoelectric dielectric layers. Numerical results show that an electric potential barrier forms near the junction between the piecewise uniform piezoelectric layers. The potential barrier depends on the extensional stress. It may be used to manipulate the electrical behaviors such as the conduction in the fiber mechanically and thus has potential applications in piezotronics.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82488753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-11-01DOI: 10.1080/07315171.2021.1971012
Shammi Kumar, Mamta Shandilya, N. Thakur
Abstract K0.5Na0.5NbO3 ceramic was synthesized at low calcination temperature by sol-gel route. Structural properties of ceramic were investigated by X-ray diffractometer, FESEM and FTIR spectrometer. Electro-optical properties of ceramic were investigated by UV-Vis and PL spectrometer. Dielectric nature of ceramic was studied at different frequencies and temperatures which disclosed that ceramic has maximum dielectric permittivity at 500 KHz. AC conductivity analysis shows negative temperature coefficient of resistance behavior. Leakage current was studied up to 180 V which shows low value of leakage current at room temperature. Ferroelectric nature was analyzed at different electric fields (5–20 kVcm−1) at 50 Hz.
{"title":"Optical induction in K0.5Na0.5NbO3 ferroelectric ceramic at low calcination temperature by sol-gel route","authors":"Shammi Kumar, Mamta Shandilya, N. Thakur","doi":"10.1080/07315171.2021.1971012","DOIUrl":"https://doi.org/10.1080/07315171.2021.1971012","url":null,"abstract":"Abstract K0.5Na0.5NbO3 ceramic was synthesized at low calcination temperature by sol-gel route. Structural properties of ceramic were investigated by X-ray diffractometer, FESEM and FTIR spectrometer. Electro-optical properties of ceramic were investigated by UV-Vis and PL spectrometer. Dielectric nature of ceramic was studied at different frequencies and temperatures which disclosed that ceramic has maximum dielectric permittivity at 500 KHz. AC conductivity analysis shows negative temperature coefficient of resistance behavior. Leakage current was studied up to 180 V which shows low value of leakage current at room temperature. Ferroelectric nature was analyzed at different electric fields (5–20 kVcm−1) at 50 Hz.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74177384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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