Pub Date : 2024-09-09DOI: 10.23919/cje.2023.00.004
Xinyu Liang;Jing Chen;Ruiying Du
Cross-chain technology, which enables different blockchains to intercommunicate with one another, is challenging. Many existing cross-chain platforms, such as Polkadot and Cosmos, generally adopt a relay-based scheme: A relaychain (relay blockchain) receives and records the state information from every parachain (parallel blockchain), and publish the information on the platform, by which parachains are able to efficiently acquire the state information from one another. In the condition when parachain is consortium blockchain, the cross-chain platform cannot work properly. On the one hand, whether state information is submitted to relaychain is completely decided by the internal decision of parachain. The timeliness of state information cannot be guaranteed. On the other hand, the transfer of state information will be interrupted due to the failure of parachain or relaychain-parachain connection. In this paper, we propose a relay-based blockchain intercommunication framework, called XPull (cross-pulling). Specifically, to ensure the timeliness of state information, we propose a cross-chain state pulling scheme based on cosigned state pulling agreement. To solve the interruption of state transfer, we propose a random scheduling scheme to resume the transfer, or confirm the failure of parachain. The security analysis and experimental results demonstrate that XPull is secure and efficient.
{"title":"XPull: A Relay-Based Blockchain Intercommunication Framework Achieving Cross-Chain State Pulling","authors":"Xinyu Liang;Jing Chen;Ruiying Du","doi":"10.23919/cje.2023.00.004","DOIUrl":"https://doi.org/10.23919/cje.2023.00.004","url":null,"abstract":"Cross-chain technology, which enables different blockchains to intercommunicate with one another, is challenging. Many existing cross-chain platforms, such as Polkadot and Cosmos, generally adopt a relay-based scheme: A relaychain (relay blockchain) receives and records the state information from every parachain (parallel blockchain), and publish the information on the platform, by which parachains are able to efficiently acquire the state information from one another. In the condition when parachain is consortium blockchain, the cross-chain platform cannot work properly. On the one hand, whether state information is submitted to relaychain is completely decided by the internal decision of parachain. The timeliness of state information cannot be guaranteed. On the other hand, the transfer of state information will be interrupted due to the failure of parachain or relaychain-parachain connection. In this paper, we propose a relay-based blockchain intercommunication framework, called XPull (cross-pulling). Specifically, to ensure the timeliness of state information, we propose a cross-chain state pulling scheme based on cosigned state pulling agreement. To solve the interruption of state transfer, we propose a random scheduling scheme to resume the transfer, or confirm the failure of parachain. The security analysis and experimental results demonstrate that XPull is secure and efficient.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669756","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.23919/cje.2023.00.043
Bo Zhou;Yifan Li;Zuhang Wang
Crystal oscillators (XOs) provide a high-precision reference frequency but have a long startup time, which severely increases the average power consumption in duty-cycled systems. This paper proposes a fully-digital low-cost two-step injection technique, by using a successive approximation register (SAR) based auto frequency control (AFC) loop, to speed up the startup behavior of XOs. A theoretical analysis is carried out to determine the optimum injection time and design low-power XOs. Fabricated in a 65 nm CMOS process, the proposed 12 MHz fast startup XO occupies an active area of $0.02 text{mm}$ and achieves a startup time less than $35 mumathrm{s}$ . The XO power consumption in the steady state is $40 mu mathrm{W}$ from a 1.0-V supply, with a startup energy of 17.2 nJ.
{"title":"A Fast Startup Crystal Oscillator with Digital SAR-AFC Based Two-Step Injection","authors":"Bo Zhou;Yifan Li;Zuhang Wang","doi":"10.23919/cje.2023.00.043","DOIUrl":"https://doi.org/10.23919/cje.2023.00.043","url":null,"abstract":"Crystal oscillators (XOs) provide a high-precision reference frequency but have a long startup time, which severely increases the average power consumption in duty-cycled systems. This paper proposes a fully-digital low-cost two-step injection technique, by using a successive approximation register (SAR) based auto frequency control (AFC) loop, to speed up the startup behavior of XOs. A theoretical analysis is carried out to determine the optimum injection time and design low-power XOs. Fabricated in a 65 nm CMOS process, the proposed 12 MHz fast startup XO occupies an active area of \u0000<tex>$0.02 text{mm}$</tex>\u0000 and achieves a startup time less than \u0000<tex>$35 mumathrm{s}$</tex>\u0000. The XO power consumption in the steady state is \u0000<tex>$40 mu mathrm{W}$</tex>\u0000 from a 1.0-V supply, with a startup energy of 17.2 nJ.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669744","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.23919/cje.2023.00.058
Zhan Wang;Yuandan Dong
By using a novel meta-resonator structure, a miniaturized, surface mountable, shared aperture, and hybrid electric/magnetic dipole pattern diversity antenna is proposed for Internet of things (IoT) applications. By exploring the shared electric (E-dipole) and magnetic dipole (M-dipole) structures, a novel T-shaped split-ring resonator (SRR) with even and odd modes is presented and studied by current distributions and equivalent circuits. Broadside and omnidirectional (monopole-like) patterns are achieved by exciting the M-dipole and E-dipole modes of the T-shaped SRR, respectively. To validate the proposed design, this shared aperture metamaterial-inspired pattern diversity antenna with a small size of $0.295 lambda_{0}times 0.0065 lambda_{0}times 0.115lambda_{0}$ is fabricated and measured. The measured overlapped −10 dB bandwidth is from 3.40 GHz to 3.63 GHz (7.0%, covering the LTE B42 band) and the port isolation is greater than 23 dB. Both two modes achieve a good radiation efficiency better than −0.79 dB (>83.0%).
通过使用新型元谐振器结构，为物联网（IoT）应用提出了一种小型化、可表面贴装、共享孔径和电/磁混合偶极子模式分集天线。通过探索共享电偶极子（E-dipole）和磁偶极子（M-dipole）结构，提出了一种具有偶数和奇数模式的新型 T 形分裂环谐振器（SRR），并通过电流分布和等效电路对其进行了研究。通过分别激发 T 型分环谐振器的 M-偶极子和 E-偶极子模式，实现了宽边和全向（类单极）模式。为了验证所提出的设计，我们制作并测量了这种共享孔径超材料启发的图案分集天线，它的尺寸很小，仅为 0.295 lambda_{0}times 0.0065 lambda_{0}times 0.115 lambda_{0}$ 。测得的重叠 -10 dB 带宽为 3.40 GHz 至 3.63 GHz（7.0%，覆盖 LTE B42 频段），端口隔离度大于 23 dB。两种模式都实现了优于-0.79 dB（>83.0%）的良好辐射效率。
{"title":"Miniaturized, Shared Electric and Magnetic Dipole, Pattern Diversity IoT Antenna for Sub-6 GHz Applications","authors":"Zhan Wang;Yuandan Dong","doi":"10.23919/cje.2023.00.058","DOIUrl":"https://doi.org/10.23919/cje.2023.00.058","url":null,"abstract":"By using a novel meta-resonator structure, a miniaturized, surface mountable, shared aperture, and hybrid electric/magnetic dipole pattern diversity antenna is proposed for Internet of things (IoT) applications. By exploring the shared electric (E-dipole) and magnetic dipole (M-dipole) structures, a novel T-shaped split-ring resonator (SRR) with even and odd modes is presented and studied by current distributions and equivalent circuits. Broadside and omnidirectional (monopole-like) patterns are achieved by exciting the M-dipole and E-dipole modes of the T-shaped SRR, respectively. To validate the proposed design, this shared aperture metamaterial-inspired pattern diversity antenna with a small size of \u0000<tex>$0.295 lambda_{0}times 0.0065 lambda_{0}times 0.115lambda_{0}$</tex>\u0000 is fabricated and measured. The measured overlapped −10 dB bandwidth is from 3.40 GHz to 3.63 GHz (7.0%, covering the LTE B42 band) and the port isolation is greater than 23 dB. Both two modes achieve a good radiation efficiency better than −0.79 dB (>83.0%).","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669736","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.23919/cje.2022.00.327
Nan He;Lei Wang;Yi Tong
Three-atoms-type $mathrm{V}_{2}mathrm{C}$ MXene, an emerging class of transition metal carbides, has attracted tremendous attention in the fabrication of advanced memristive devices due to its excellent electrochemical properties. However, the inserted effects and corresponding physical mechanisms of inserting $mathrm{V}_{2}mathrm{C}$ on traditional TiO 2 -based memristors have not been clearly explored. In this work, exhaustive electrical characterizations of the $mathrm{V}_{2}mathrm{C}$ /TiO 2 -based devices exhibit enhanced performance (e.g., improved switching stability and lower operating voltages) compared to the TiO 2 -based counterparts. In addition, the advantaged influences of the inserted $mathrm{V}_{2}mathrm{C}$ have also been studied by means of first-principles calculations, confirming that $mathrm{V}_{2}mathrm{C}$ MXene enables controllable internal ionic process and facilitated formation mechanism of the Ag conductive filaments. This work demonstrates a way to combine experimental and theoretical investigations to reveal the positive effects of introducing $mathrm{V}_{2}mathrm{C}$ MXene on memristor, which is beneficial for fabricating performance-enhanced memristors.
{"title":"Investigating the Effects of $mathrm{V}_{2}mathrm{C}$ MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO2-Based Memristors","authors":"Nan He;Lei Wang;Yi Tong","doi":"10.23919/cje.2022.00.327","DOIUrl":"https://doi.org/10.23919/cje.2022.00.327","url":null,"abstract":"Three-atoms-type \u0000<tex>$mathrm{V}_{2}mathrm{C}$</tex>\u0000 MXene, an emerging class of transition metal carbides, has attracted tremendous attention in the fabrication of advanced memristive devices due to its excellent electrochemical properties. However, the inserted effects and corresponding physical mechanisms of inserting \u0000<tex>$mathrm{V}_{2}mathrm{C}$</tex>\u0000 on traditional TiO\u0000<inf>2</inf>\u0000-based memristors have not been clearly explored. In this work, exhaustive electrical characterizations of the \u0000<tex>$mathrm{V}_{2}mathrm{C}$</tex>\u0000 /TiO\u0000<inf>2</inf>\u0000-based devices exhibit enhanced performance (e.g., improved switching stability and lower operating voltages) compared to the TiO\u0000<inf>2</inf>\u0000-based counterparts. In addition, the advantaged influences of the inserted \u0000<tex>$mathrm{V}_{2}mathrm{C}$</tex>\u0000 have also been studied by means of first-principles calculations, confirming that \u0000<tex>$mathrm{V}_{2}mathrm{C}$</tex>\u0000 MXene enables controllable internal ionic process and facilitated formation mechanism of the Ag conductive filaments. This work demonstrates a way to combine experimental and theoretical investigations to reveal the positive effects of introducing \u0000<tex>$mathrm{V}_{2}mathrm{C}$</tex>\u0000 MXene on memristor, which is beneficial for fabricating performance-enhanced memristors.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669740","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.23919/cje.2022.00.443
Xiangyu Deng;Aijia Zhang;Jinhong Ye
The original image undergoes geometric deformation in terms of position, shape, size, and orientation due to the shooting angle or capturing process during image acquisition. This leads to inconveniences and significant challenges in various image processing fields such as image fusion, denoising, recognition, and segmentation. To enhance the processing ability and recognition accuracy of deformation images, an adaptive algorithm for correcting image deformities is proposed for quadrilaterals and triangles. Firstly, the deformation image undergoes preprocessing, and the contour of the image edge is extracted. Then, discrete points on the image edge are identified to accurately locate the edges. Finally, the deformation of the quadrilateral or triangle is transformed into a standard rectangular or equilateral triangular image using the proposed three-dimensional homography transformation algorithm. This effectively completes the conversion from an irregular image to a regular image in an adaptive manner. Numerous experiments demonstrate that the proposed algorithm surpasses traditional methods like Hough transform and Radon transform. It improves the effectiveness of correcting deformation in images, effectively addresses the issue of geometric deformation, and provides a new technical method for processing deformation images.
{"title":"An Algorithm of Deformation Image Correction Based on Spatial Mapping","authors":"Xiangyu Deng;Aijia Zhang;Jinhong Ye","doi":"10.23919/cje.2022.00.443","DOIUrl":"https://doi.org/10.23919/cje.2022.00.443","url":null,"abstract":"The original image undergoes geometric deformation in terms of position, shape, size, and orientation due to the shooting angle or capturing process during image acquisition. This leads to inconveniences and significant challenges in various image processing fields such as image fusion, denoising, recognition, and segmentation. To enhance the processing ability and recognition accuracy of deformation images, an adaptive algorithm for correcting image deformities is proposed for quadrilaterals and triangles. Firstly, the deformation image undergoes preprocessing, and the contour of the image edge is extracted. Then, discrete points on the image edge are identified to accurately locate the edges. Finally, the deformation of the quadrilateral or triangle is transformed into a standard rectangular or equilateral triangular image using the proposed three-dimensional homography transformation algorithm. This effectively completes the conversion from an irregular image to a regular image in an adaptive manner. Numerous experiments demonstrate that the proposed algorithm surpasses traditional methods like Hough transform and Radon transform. It improves the effectiveness of correcting deformation in images, effectively addresses the issue of geometric deformation, and provides a new technical method for processing deformation images.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669745","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.23919/cje.2022.00.223
Saiqin Long;Cong Wang;Weifan Long;Haolin Liu;Qingyong Deng;Zhetao Li
With the advent of the 5G era and the accelerated development of edge computing and Internet of Things technologies, the number of tasks to be processed by mobile devices continues to increase. Edge nodes become incapable of facing massive tasks due to their own limited computing capabilities, and thus the cloud and edge collaborative environment is produced. In order to complete as many tasks as possible while meeting the deadline constraints, we consider the task scheduling problem in the cloud-edge and edge-edge collaboration scenarios. As the number of tasks on edge nodes increases, the solution space becomes larger. Considering that each edge node has its own communication range, we design an edge node based clustering algorithm (ENCA), which can reduce the feasible region while dividing the edge node set. We transform the edge nodes inside the cluster into a bipartite graph, and then propose a task scheduling algorithm based on maximum matching (SAMM). Our ENCA and SAMM are used to solve the task scheduling problem. Compared with the other benchmark algorithms, experimental results show that our algorithms increase the number of the tasks which can be completed and meet the latest deadline constraints by 32%-47.2% under high load conditions.
{"title":"An Efficient Task Scheduling Algorithm in the Cloud and Edge Collaborative Environment","authors":"Saiqin Long;Cong Wang;Weifan Long;Haolin Liu;Qingyong Deng;Zhetao Li","doi":"10.23919/cje.2022.00.223","DOIUrl":"https://doi.org/10.23919/cje.2022.00.223","url":null,"abstract":"With the advent of the 5G era and the accelerated development of edge computing and Internet of Things technologies, the number of tasks to be processed by mobile devices continues to increase. Edge nodes become incapable of facing massive tasks due to their own limited computing capabilities, and thus the cloud and edge collaborative environment is produced. In order to complete as many tasks as possible while meeting the deadline constraints, we consider the task scheduling problem in the cloud-edge and edge-edge collaboration scenarios. As the number of tasks on edge nodes increases, the solution space becomes larger. Considering that each edge node has its own communication range, we design an edge node based clustering algorithm (ENCA), which can reduce the feasible region while dividing the edge node set. We transform the edge nodes inside the cluster into a bipartite graph, and then propose a task scheduling algorithm based on maximum matching (SAMM). Our ENCA and SAMM are used to solve the task scheduling problem. Compared with the other benchmark algorithms, experimental results show that our algorithms increase the number of the tasks which can be completed and meet the latest deadline constraints by 32%-47.2% under high load conditions.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669732","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142160015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.23919/cje.2023.00.064
Yang Cheng;Yuandan Dong
This paper proposes a wideband cavity-backed slotted patch antenna, loaded with a magneto-electric (ME)-dipole and fed by a microstrip line, for millimeter wave (mm-Wave) applications. The coupled-feed cavity-backed slotted patch antenna is loaded with the ME-dipole. The slotted patch antenna serves as both a radiator and a ground for the ME-dipole. The combination of the ME-dipole antenna and the slotted patch antenna realizes a -10 dB impedance bandwidth covering over 22.86-44.35 GHz (63.9%). The pattern of the antenna element remains stable throughout this bandwidth. The proposed broadband antenna unit not only realizes single linearly polarized (LP) radiation but also can be designed for dual-LP radiation. The dual-polarized radiation can be achieved by changing the slot of the patch antenna to a crossed slot and altering the ME-dipole antenna to a dual-polarization form. A $2times 2$ dual-polarized array has been designed, fabricated, and tested. A novel dual-polarized feeding network is proposed. To achieve higher isolation, broadband in-phase feed and differential feed are adopted, respectively. A low-loss single to the differential structure is proposed for differential feeding. The simulated isolation of the array is higher than 40 dB. Measured results show that the dual-polarized $2times 2$ array has an overlapping bandwidth of 52.3% ( $vert S_{11}vert < -10 text{dB}$ and $vert S_{21}vert < -30 text{dB}$ ) with a peak gain of 14 dBi. The proposed antenna, featuring a wide overall bandwidth, low cost, and good radiation performance, is well suited for mm-Wave applications.
{"title":"Wideband Millimeter Wave Antenna with Cavity Backed Slotted Patch and Magneto-Electric Dipole","authors":"Yang Cheng;Yuandan Dong","doi":"10.23919/cje.2023.00.064","DOIUrl":"https://doi.org/10.23919/cje.2023.00.064","url":null,"abstract":"This paper proposes a wideband cavity-backed slotted patch antenna, loaded with a magneto-electric (ME)-dipole and fed by a microstrip line, for millimeter wave (mm-Wave) applications. The coupled-feed cavity-backed slotted patch antenna is loaded with the ME-dipole. The slotted patch antenna serves as both a radiator and a ground for the ME-dipole. The combination of the ME-dipole antenna and the slotted patch antenna realizes a -10 dB impedance bandwidth covering over 22.86-44.35 GHz (63.9%). The pattern of the antenna element remains stable throughout this bandwidth. The proposed broadband antenna unit not only realizes single linearly polarized (LP) radiation but also can be designed for dual-LP radiation. The dual-polarized radiation can be achieved by changing the slot of the patch antenna to a crossed slot and altering the ME-dipole antenna to a dual-polarization form. A \u0000<tex>$2times 2$</tex>\u0000 dual-polarized array has been designed, fabricated, and tested. A novel dual-polarized feeding network is proposed. To achieve higher isolation, broadband in-phase feed and differential feed are adopted, respectively. A low-loss single to the differential structure is proposed for differential feeding. The simulated isolation of the array is higher than 40 dB. Measured results show that the dual-polarized \u0000<tex>$2times 2$</tex>\u0000 array has an overlapping bandwidth of 52.3% (\u0000<tex>$vert S_{11}vert < -10 text{dB}$</tex>\u0000 and \u0000<tex>$vert S_{21}vert < -30 text{dB}$</tex>\u0000) with a peak gain of 14 dBi. The proposed antenna, featuring a wide overall bandwidth, low cost, and good radiation performance, is well suited for mm-Wave applications.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669725","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.23919/cje.2022.00.255
Qianyun Zhang;Biyi Wu
With the rapid development of space-air-ground integrated communications, diverse requirements have been imposed on antenna radiation patterns. In addition, increasingly compact platforms brings significant challenges to the deployment of antenna arrays normally used for beamforming. This article comprehensively surveys characteristic mode analysis (CMA)-based pattern diversity realizations in past years. Specifically, exciting multiple characteristic modes independently achieves pattern reconfigurability and element-reduced multiple-input and multiple-output systems. We furthermore overview a series of works on modes superposition. Various methods have been explored for modal weights decision, and therefore specific patterns are synthesized. The weighted modal combination also fulfills single-element beamforming. A recent study on an antenna design for electrically small unmanned aerial vehicles (UAVs) is summarized, and the desired reconfigurable radiation patterns of the conformal radiator are realized based on CMA. Moreover, a formation-based beamforming technique, which takes advantages of the electromagnetic coupling among conformal radiators and the agility of UAVs, is introduced.
{"title":"Characteristic Mode Analysis for Pattern Diversity and Beamforming: A Survey","authors":"Qianyun Zhang;Biyi Wu","doi":"10.23919/cje.2022.00.255","DOIUrl":"https://doi.org/10.23919/cje.2022.00.255","url":null,"abstract":"With the rapid development of space-air-ground integrated communications, diverse requirements have been imposed on antenna radiation patterns. In addition, increasingly compact platforms brings significant challenges to the deployment of antenna arrays normally used for beamforming. This article comprehensively surveys characteristic mode analysis (CMA)-based pattern diversity realizations in past years. Specifically, exciting multiple characteristic modes independently achieves pattern reconfigurability and element-reduced multiple-input and multiple-output systems. We furthermore overview a series of works on modes superposition. Various methods have been explored for modal weights decision, and therefore specific patterns are synthesized. The weighted modal combination also fulfills single-element beamforming. A recent study on an antenna design for electrically small unmanned aerial vehicles (UAVs) is summarized, and the desired reconfigurable radiation patterns of the conformal radiator are realized based on CMA. Moreover, a formation-based beamforming technique, which takes advantages of the electromagnetic coupling among conformal radiators and the agility of UAVs, is introduced.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669743","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A silicon carbide (SiC) double trench metal-oxide-semiconductor field effect transistor (DTMOS) with split gate (SG) and integrated Schottky barrier diode (SBD) is proposed for the first time. The proposed device features two enhanced deep trenches in the surface, in which a source-connected SG with a thicker dielectric layer is located at the bottom of the deep gate trench and an integrated SBD is located at the sidewall of the deep source trench (DST). Combined with shielding effect provided by the P + shield layer under the DST and integrated SBD, the proposed structure not only reduces the reverse transfer capacitance $(C_{text{rss}})$ and gate-drain charge $(Q_{text{gd}})$ but also restrains the saturation drain current $(I_{mathrm{d},text{sat}})$ and improves the diode performance of the device. Numerical analysis results show that compared with the Con-DTMOS and Con-DTMOS with external SBD diode, the turn-on loss $(E_{text{on}})$ and turn-off loss $(E_{text{off}})$ for the proposed device are reduced by 56.4%/70.4% and 56.6%/69.9%, respectively. Moreover, the $I_{mathrm{d},text{sat}}$ at the $V_{text{gs}}$ of 18 V for the proposed device is reduced by 74.4% and the short-circuit withstand time $(t_{text{SC}})$ is improved by about 7.5 times. As a result, an ultra-low power loss and improved short-circuit capability is obtained for the proposed device.
{"title":"SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-Low Power Loss and Improved Short-Circuit Capability","authors":"Jinping Zhang;Qinglin Wu;Zixun Chen;Hua Zou;Bo Zhang","doi":"10.23919/cje.2022.00.394","DOIUrl":"https://doi.org/10.23919/cje.2022.00.394","url":null,"abstract":"A silicon carbide (SiC) double trench metal-oxide-semiconductor field effect transistor (DTMOS) with split gate (SG) and integrated Schottky barrier diode (SBD) is proposed for the first time. The proposed device features two enhanced deep trenches in the surface, in which a source-connected SG with a thicker dielectric layer is located at the bottom of the deep gate trench and an integrated SBD is located at the sidewall of the deep source trench (DST). Combined with shielding effect provided by the P\u0000<sup>+</sup>\u0000 shield layer under the DST and integrated SBD, the proposed structure not only reduces the reverse transfer capacitance \u0000<tex>$(C_{text{rss}})$</tex>\u0000 and gate-drain charge \u0000<tex>$(Q_{text{gd}})$</tex>\u0000 but also restrains the saturation drain current \u0000<tex>$(I_{mathrm{d},text{sat}})$</tex>\u0000 and improves the diode performance of the device. Numerical analysis results show that compared with the Con-DTMOS and Con-DTMOS with external SBD diode, the turn-on loss \u0000<tex>$(E_{text{on}})$</tex>\u0000 and turn-off loss \u0000<tex>$(E_{text{off}})$</tex>\u0000 for the proposed device are reduced by 56.4%/70.4% and 56.6%/69.9%, respectively. Moreover, the \u0000<tex>$I_{mathrm{d},text{sat}}$</tex>\u0000 at the \u0000<tex>$V_{text{gs}}$</tex>\u0000 of 18 V for the proposed device is reduced by 74.4% and the short-circuit withstand time \u0000<tex>$(t_{text{SC}})$</tex>\u0000 is improved by about 7.5 times. As a result, an ultra-low power loss and improved short-circuit capability is obtained for the proposed device.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669746","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-09DOI: 10.23919/cje.2023.00.157
Long Wang;Jixin Chen;Debin Hou;Xiaojie Xu;Zekun Li;Dawei Tang;Rui Zhou;Hao Qi;Yu Xiang
In this paper, a double-balanced doubler chain with >43-dBc fundamental rejection over an ultra-wide bandwidth in $0.13-mumathrm{m}$ SiGe BiCMOS technology is proposed. To achieve high fundamental rejection, high output power, and high conversion gain over an ultra-wideband, a double-balanced doubler chain with pre-and post-drivers employs a bandwidth broadening technique and a ground shielding strategy. Analysis and comparison of the single-balanced and double-balanced doublers were conducted, with a focus on their fundamental rejection and circuit imbalance. Three doublers, including a passive single-balanced doubler, an active single-balanced doubler, and a passive double-balanced doubler were designed to verify the performance and characteristics of the single-and double-balanced doublers. Measurements show that the proposed double-balanced doubler chain has approximately 15 dB better fundamental rejection, and more than twice the relative bandwidth compared to the single-balanced doubler chain fabricated with the same process. Over an 86.9% 3-dB bandwidth from 13.4 GHz to 34 GHz, the double-balanced doubler chain delivers 14.7-dBm peak output power and has >43-/33-dBc fundamental/third-harmonic rejection. To the authors' best knowledge, the proposed double-balanced doubler chain shows the highest fundamental rejection over an ultra-wideband among silicon-based doublers at millimeter-wave frequency bands.
{"title":"An Ultra-wideband Doubler Chain with 43–65 dBc Fundamental Rejection in Ku/K/Ka Band","authors":"Long Wang;Jixin Chen;Debin Hou;Xiaojie Xu;Zekun Li;Dawei Tang;Rui Zhou;Hao Qi;Yu Xiang","doi":"10.23919/cje.2023.00.157","DOIUrl":"https://doi.org/10.23919/cje.2023.00.157","url":null,"abstract":"In this paper, a double-balanced doubler chain with >43-dBc fundamental rejection over an ultra-wide bandwidth in \u0000<tex>$0.13-mumathrm{m}$</tex>\u0000 SiGe BiCMOS technology is proposed. To achieve high fundamental rejection, high output power, and high conversion gain over an ultra-wideband, a double-balanced doubler chain with pre-and post-drivers employs a bandwidth broadening technique and a ground shielding strategy. Analysis and comparison of the single-balanced and double-balanced doublers were conducted, with a focus on their fundamental rejection and circuit imbalance. Three doublers, including a passive single-balanced doubler, an active single-balanced doubler, and a passive double-balanced doubler were designed to verify the performance and characteristics of the single-and double-balanced doublers. Measurements show that the proposed double-balanced doubler chain has approximately 15 dB better fundamental rejection, and more than twice the relative bandwidth compared to the single-balanced doubler chain fabricated with the same process. Over an 86.9% 3-dB bandwidth from 13.4 GHz to 34 GHz, the double-balanced doubler chain delivers 14.7-dBm peak output power and has >43-/33-dBc fundamental/third-harmonic rejection. To the authors' best knowledge, the proposed double-balanced doubler chain shows the highest fundamental rejection over an ultra-wideband among silicon-based doublers at millimeter-wave frequency bands.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10669730","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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