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XPull: A Relay-Based Blockchain Intercommunication Framework Achieving Cross-Chain State Pulling XPull:实现跨链状态拉动的基于中继的区块链互通框架
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2023.00.004
Xinyu Liang;Jing Chen;Ruiying Du
Cross-chain technology, which enables different blockchains to intercommunicate with one another, is challenging. Many existing cross-chain platforms, such as Polkadot and Cosmos, generally adopt a relay-based scheme: A relaychain (relay blockchain) receives and records the state information from every parachain (parallel blockchain), and publish the information on the platform, by which parachains are able to efficiently acquire the state information from one another. In the condition when parachain is consortium blockchain, the cross-chain platform cannot work properly. On the one hand, whether state information is submitted to relaychain is completely decided by the internal decision of parachain. The timeliness of state information cannot be guaranteed. On the other hand, the transfer of state information will be interrupted due to the failure of parachain or relaychain-parachain connection. In this paper, we propose a relay-based blockchain intercommunication framework, called XPull (cross-pulling). Specifically, to ensure the timeliness of state information, we propose a cross-chain state pulling scheme based on cosigned state pulling agreement. To solve the interruption of state transfer, we propose a random scheduling scheme to resume the transfer, or confirm the failure of parachain. The security analysis and experimental results demonstrate that XPull is secure and efficient.
跨链技术可使不同的区块链相互通信,但这种技术具有挑战性。现有的许多跨链平台,如 Polkadot 和 Cosmos,一般采用基于中继的方案:中继链(中继区块链)接收并记录来自每个平行区块链(parachain)的状态信息,并将信息发布到平台上,通过这种方式,区块链之间能够高效地获取状态信息。在准链为联盟区块链的情况下,跨链平台无法正常工作。一方面,是否向中继链提交状态信息完全由 parachain 内部决定。状态信息的及时性无法保证。另一方面,状态信息的传输会因中继链或中继链与中继链连接的故障而中断。本文提出了一种基于中继的区块链互通框架,称为 XPull(交叉拉取)。具体来说,为了确保状态信息的及时性,我们提出了一种基于联署状态拉取协议的跨链状态拉取方案。为了解决状态传输中断的问题,我们提出了一种随机调度方案来恢复传输,或确认 Parachain 失效。安全分析和实验结果表明,XPull 是安全高效的。
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引用次数: 0
High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-Reflection Design 基于局部无反射设计的高占空比脉冲大功率氮化镓倍增器
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2023.00.179
Yazhou Dong;Tianchi Zhou;Shixiong Liang;Guodong Gu;Hongji Zhou;Jianghua Yu;Hailong Guo;Yaxin Zhang
The study focuses on the development of gallium nitride (GaN) Schottky barrier diode (SBD) frequency doublers for terahertz technology. The low conversion efficiency of these doublers limits their practical applications. To address this challenge, the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure. The method aims to improve the coupling efficiency of input power and reduce the reflection of power output. Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers, achieving an efficiency of 16.9% and a peak output power of 160 mW at 175 GHz. These results suggest that the method can contribute to the further development of GaN SBD frequency doublers for terahertz technology.
研究重点是开发用于太赫兹技术的氮化镓(GaN)肖特基势垒二极管(SBD)倍频器。这些倍频器的低转换效率限制了它们的实际应用。为了应对这一挑战,本文提出了一种基于三维电磁结构的多目标局部无反射设计方法。该方法旨在提高输入功率的耦合效率,减少功率输出的反射。实验结果表明,该方法显著提高了氮化镓 SBD 倍频器的性能,在 175 GHz 频率下效率达到 16.9%,峰值输出功率达到 160 mW。这些结果表明,该方法有助于太赫兹技术 GaN SBD 倍频器的进一步发展。
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引用次数: 0
A Fast Startup Crystal Oscillator with Digital SAR-AFC Based Two-Step Injection 基于数字 SAR-AFC 两步注入技术的快速启动晶体振荡器
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2023.00.043
Bo Zhou;Yifan Li;Zuhang Wang
Crystal oscillators (XOs) provide a high-precision reference frequency but have a long startup time, which severely increases the average power consumption in duty-cycled systems. This paper proposes a fully-digital low-cost two-step injection technique, by using a successive approximation register (SAR) based auto frequency control (AFC) loop, to speed up the startup behavior of XOs. A theoretical analysis is carried out to determine the optimum injection time and design low-power XOs. Fabricated in a 65 nm CMOS process, the proposed 12 MHz fast startup XO occupies an active area of $0.02 text{mm}$ and achieves a startup time less than $35 mumathrm{s}$. The XO power consumption in the steady state is $40 mu mathrm{W}$ from a 1.0-V supply, with a startup energy of 17.2 nJ.
晶体振荡器(XO)可提供高精度参考频率,但启动时间较长,严重增加了占空比系统的平均功耗。本文通过使用基于逐次逼近寄存器 (SAR) 的自动频率控制 (AFC) 循环,提出了一种全数字低成本两步注入技术,以加快 XO 的启动速度。通过理论分析,确定了最佳注入时间,并设计出了低功耗 XO。所提出的 12 MHz 快速启动 XO 采用 65 nm CMOS 工艺制造,占用的有效面积为 0.02 text{mm}$,启动时间小于 35 mumathrm{s}$。在稳态下,XO 的功耗为 1.0 V,启动能量为 17.2 nJ。
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引用次数: 0
Investigating the Effects of $mathrm{V}_{2}mathrm{C}$ MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO2-Based Memristors 研究$mathrm{V}_{2}mathrm{C}$ MXene对提高基于二氧化钛的晶体管的开关稳定性和降低其工作电压的影响
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2022.00.327
Nan He;Lei Wang;Yi Tong
Three-atoms-type $mathrm{V}_{2}mathrm{C}$ MXene, an emerging class of transition metal carbides, has attracted tremendous attention in the fabrication of advanced memristive devices due to its excellent electrochemical properties. However, the inserted effects and corresponding physical mechanisms of inserting $mathrm{V}_{2}mathrm{C}$ on traditional TiO2-based memristors have not been clearly explored. In this work, exhaustive electrical characterizations of the $mathrm{V}_{2}mathrm{C}$ /TiO2-based devices exhibit enhanced performance (e.g., improved switching stability and lower operating voltages) compared to the TiO2-based counterparts. In addition, the advantaged influences of the inserted $mathrm{V}_{2}mathrm{C}$ have also been studied by means of first-principles calculations, confirming that $mathrm{V}_{2}mathrm{C}$ MXene enables controllable internal ionic process and facilitated formation mechanism of the Ag conductive filaments. This work demonstrates a way to combine experimental and theoretical investigations to reveal the positive effects of introducing $mathrm{V}_{2}mathrm{C}$ MXene on memristor, which is beneficial for fabricating performance-enhanced memristors.
三原子型$mathrm{V}_{2}mathrm{C}$ MXene是一类新兴的过渡金属碳化物,由于其优异的电化学特性,在制造先进的忆阻器方面引起了极大的关注。然而,在传统的基于二氧化钛的忆阻器上插入 $mathrm{V}_{2}mathrm{C}$ 的插入效应和相应的物理机制尚未得到明确的探讨。在这项工作中,对基于$mathrm{V}_{2}mathrm{C}$ /TiO2的器件进行了详尽的电学表征,结果表明,与基于TiO2的器件相比,这些器件的性能有所提高(例如,开关稳定性更好,工作电压更低)。此外,我们还通过第一原理计算研究了插入$mathrm{V}_{2}mathrm{C}$的优势影响,证实了$mathrm{V}_{2}mathrm{C}$ MXene能够实现可控的内部离子过程并促进银导电丝的形成机制。这项工作展示了一种将实验和理论研究相结合的方法,揭示了引入$ingmathrm{V}_{2}mathrm{C}$ MXene对可控硅的积极影响,有利于制造性能增强型可控硅。
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引用次数: 0
Miniaturized, Shared Electric and Magnetic Dipole, Pattern Diversity IoT Antenna for Sub-6 GHz Applications 用于 6 GHz 以下应用的小型化共用电偶极子和磁偶极子、模式分集物联网天线
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2023.00.058
Zhan Wang;Yuandan Dong
By using a novel meta-resonator structure, a miniaturized, surface mountable, shared aperture, and hybrid electric/magnetic dipole pattern diversity antenna is proposed for Internet of things (IoT) applications. By exploring the shared electric (E-dipole) and magnetic dipole (M-dipole) structures, a novel T-shaped split-ring resonator (SRR) with even and odd modes is presented and studied by current distributions and equivalent circuits. Broadside and omnidirectional (monopole-like) patterns are achieved by exciting the M-dipole and E-dipole modes of the T-shaped SRR, respectively. To validate the proposed design, this shared aperture metamaterial-inspired pattern diversity antenna with a small size of $0.295 lambda_{0}times 0.0065 lambda_{0}times 0.115lambda_{0}$ is fabricated and measured. The measured overlapped −10 dB bandwidth is from 3.40 GHz to 3.63 GHz (7.0%, covering the LTE B42 band) and the port isolation is greater than 23 dB. Both two modes achieve a good radiation efficiency better than −0.79 dB (>83.0%).
通过使用新型元谐振器结构,为物联网(IoT)应用提出了一种小型化、可表面贴装、共享孔径和电/磁混合偶极子模式分集天线。通过探索共享电偶极子(E-dipole)和磁偶极子(M-dipole)结构,提出了一种具有偶数和奇数模式的新型 T 形分裂环谐振器(SRR),并通过电流分布和等效电路对其进行了研究。通过分别激发 T 型分环谐振器的 M-偶极子和 E-偶极子模式,实现了宽边和全向(类单极)模式。为了验证所提出的设计,我们制作并测量了这种共享孔径超材料启发的图案分集天线,它的尺寸很小,仅为 0.295 lambda_{0}times 0.0065 lambda_{0}times 0.115 lambda_{0}$ 。测得的重叠 -10 dB 带宽为 3.40 GHz 至 3.63 GHz(7.0%,覆盖 LTE B42 频段),端口隔离度大于 23 dB。两种模式都实现了优于-0.79 dB(>83.0%)的良好辐射效率。
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引用次数: 0
An Efficient Task Scheduling Algorithm in the Cloud and Edge Collaborative Environment 云与边缘协作环境中的高效任务调度算法
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2022.00.223
Saiqin Long;Cong Wang;Weifan Long;Haolin Liu;Qingyong Deng;Zhetao Li
With the advent of the 5G era and the accelerated development of edge computing and Internet of Things technologies, the number of tasks to be processed by mobile devices continues to increase. Edge nodes become incapable of facing massive tasks due to their own limited computing capabilities, and thus the cloud and edge collaborative environment is produced. In order to complete as many tasks as possible while meeting the deadline constraints, we consider the task scheduling problem in the cloud-edge and edge-edge collaboration scenarios. As the number of tasks on edge nodes increases, the solution space becomes larger. Considering that each edge node has its own communication range, we design an edge node based clustering algorithm (ENCA), which can reduce the feasible region while dividing the edge node set. We transform the edge nodes inside the cluster into a bipartite graph, and then propose a task scheduling algorithm based on maximum matching (SAMM). Our ENCA and SAMM are used to solve the task scheduling problem. Compared with the other benchmark algorithms, experimental results show that our algorithms increase the number of the tasks which can be completed and meet the latest deadline constraints by 32%-47.2% under high load conditions.
随着 5G 时代的到来以及边缘计算和物联网技术的加速发展,移动设备需要处理的任务数量不断增加。边缘节点由于自身计算能力有限,无法面对海量任务,因此产生了云和边缘协作环境。为了在满足截止日期限制的前提下完成尽可能多的任务,我们考虑了云-边缘和边缘-边缘协作场景下的任务调度问题。随着边缘节点上任务数量的增加,求解空间也随之变大。考虑到每个边缘节点都有自己的通信范围,我们设计了一种基于边缘节点的聚类算法(ENCA),它可以在划分边缘节点集的同时缩小可行区域。我们将集群内的边缘节点转化为双向图,然后提出了基于最大匹配的任务调度算法(SAMM)。我们的 ENCA 和 SAMM 被用来解决任务调度问题。与其他基准算法相比,实验结果表明,在高负载条件下,我们的算法能将能完成并满足最新期限约束的任务数量提高 32%-47.2%。
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引用次数: 0
An Algorithm of Deformation Image Correction Based on Spatial Mapping 基于空间映射的变形图像校正算法
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2022.00.443
Xiangyu Deng;Aijia Zhang;Jinhong Ye
The original image undergoes geometric deformation in terms of position, shape, size, and orientation due to the shooting angle or capturing process during image acquisition. This leads to inconveniences and significant challenges in various image processing fields such as image fusion, denoising, recognition, and segmentation. To enhance the processing ability and recognition accuracy of deformation images, an adaptive algorithm for correcting image deformities is proposed for quadrilaterals and triangles. Firstly, the deformation image undergoes preprocessing, and the contour of the image edge is extracted. Then, discrete points on the image edge are identified to accurately locate the edges. Finally, the deformation of the quadrilateral or triangle is transformed into a standard rectangular or equilateral triangular image using the proposed three-dimensional homography transformation algorithm. This effectively completes the conversion from an irregular image to a regular image in an adaptive manner. Numerous experiments demonstrate that the proposed algorithm surpasses traditional methods like Hough transform and Radon transform. It improves the effectiveness of correcting deformation in images, effectively addresses the issue of geometric deformation, and provides a new technical method for processing deformation images.
在图像采集过程中,由于拍摄角度或捕捉过程的原因,原始图像在位置、形状、大小和方向等方面会发生几何变形。这给图像融合、去噪、识别和分割等各种图像处理领域带来了不便和巨大挑战。为了提高变形图像的处理能力和识别精度,本文提出了一种针对四边形和三角形的自适应图像变形校正算法。首先,对变形图像进行预处理,提取图像边缘轮廓。然后,识别图像边缘上的离散点,以准确定位边缘。最后,利用所提出的三维同构变换算法,将四边形或三角形的变形图像转换为标准的矩形或等边三角形图像。这样就以自适应的方式有效地完成了从不规则图像到规则图像的转换。大量实验证明,所提出的算法超越了 Hough 变换和 Radon 变换等传统方法。它提高了纠正图像形变的效果,有效解决了几何形变问题,为处理形变图像提供了一种新的技术方法。
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引用次数: 0
Wideband Millimeter Wave Antenna with Cavity Backed Slotted Patch and Magneto-Electric Dipole 采用腔背开槽贴片和磁电偶极子的宽带毫米波天线
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2023.00.064
Yang Cheng;Yuandan Dong
This paper proposes a wideband cavity-backed slotted patch antenna, loaded with a magneto-electric (ME)-dipole and fed by a microstrip line, for millimeter wave (mm-Wave) applications. The coupled-feed cavity-backed slotted patch antenna is loaded with the ME-dipole. The slotted patch antenna serves as both a radiator and a ground for the ME-dipole. The combination of the ME-dipole antenna and the slotted patch antenna realizes a -10 dB impedance bandwidth covering over 22.86-44.35 GHz (63.9%). The pattern of the antenna element remains stable throughout this bandwidth. The proposed broadband antenna unit not only realizes single linearly polarized (LP) radiation but also can be designed for dual-LP radiation. The dual-polarized radiation can be achieved by changing the slot of the patch antenna to a crossed slot and altering the ME-dipole antenna to a dual-polarization form. A $2times 2$ dual-polarized array has been designed, fabricated, and tested. A novel dual-polarized feeding network is proposed. To achieve higher isolation, broadband in-phase feed and differential feed are adopted, respectively. A low-loss single to the differential structure is proposed for differential feeding. The simulated isolation of the array is higher than 40 dB. Measured results show that the dual-polarized $2times 2$ array has an overlapping bandwidth of 52.3% ($vert S_{11}vert < -10 text{dB}$ and $vert S_{21}vert < -30 text{dB}$) with a peak gain of 14 dBi. The proposed antenna, featuring a wide overall bandwidth, low cost, and good radiation performance, is well suited for mm-Wave applications.
本文针对毫米波(mm-Wave)应用提出了一种装有磁电(ME)偶极子并由微带线馈电的宽带腔背开槽贴片天线。耦合馈电腔背开槽贴片天线装有磁电偶极子。槽式贴片天线既是 ME-偶极子的辐射器,又是其接地。ME-Dipole 天线和槽形贴片天线的组合实现了 -10 dB 阻抗带宽,覆盖 22.86-44.35 GHz(63.9%)。天线元件的图案在整个带宽内保持稳定。所提出的宽带天线单元不仅能实现单线性极化(LP)辐射,还能设计成双线性极化辐射。通过将贴片天线的槽改为交叉槽,并将 ME-偶极子天线改为双极化形式,可以实现双极化辐射。我们设计、制造并测试了一个2/times 2$的双极化阵列。还提出了一种新型双极化馈电网络。为了实现更高的隔离度,分别采用了宽带同相馈电和差分馈电。为实现差分馈电,提出了一种低损耗的单向差分结构。阵列的模拟隔离度高于 40 dB。测量结果表明,双极化2times 2$阵列的重叠带宽为52.3%($vert S_{11}vert < -10 text{dB}$和$vert S_{21}vert < -30 text{dB}$),峰值增益为14 dBi。所提出的天线具有总体带宽宽、成本低和辐射性能好的特点,非常适合毫米波应用。
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引用次数: 0
Characteristic Mode Analysis for Pattern Diversity and Beamforming: A Survey 用于模式分集和波束成形的特征模式分析:调查
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2022.00.255
Qianyun Zhang;Biyi Wu
With the rapid development of space-air-ground integrated communications, diverse requirements have been imposed on antenna radiation patterns. In addition, increasingly compact platforms brings significant challenges to the deployment of antenna arrays normally used for beamforming. This article comprehensively surveys characteristic mode analysis (CMA)-based pattern diversity realizations in past years. Specifically, exciting multiple characteristic modes independently achieves pattern reconfigurability and element-reduced multiple-input and multiple-output systems. We furthermore overview a series of works on modes superposition. Various methods have been explored for modal weights decision, and therefore specific patterns are synthesized. The weighted modal combination also fulfills single-element beamforming. A recent study on an antenna design for electrically small unmanned aerial vehicles (UAVs) is summarized, and the desired reconfigurable radiation patterns of the conformal radiator are realized based on CMA. Moreover, a formation-based beamforming technique, which takes advantages of the electromagnetic coupling among conformal radiators and the agility of UAVs, is introduced.
随着天-空-地一体化通信的快速发展,对天线辐射模式提出了各种要求。此外,越来越紧凑的平台也给通常用于波束成形的天线阵列的部署带来了巨大挑战。本文全面回顾了过去几年基于特征模态分析(CMA)的模式分集实现情况。具体来说,独立激发多个特征模式可实现模式的可重构性和元素减少的多输入多输出系统。此外,我们还概述了一系列关于模式叠加的工作。我们探索了各种决定模态权重的方法,从而合成了特定的模式。加权模态组合还能实现单元素波束成形。本文总结了最近一项关于电动小型无人机(UAV)天线设计的研究,并基于 CMA 实现了保形辐射器所需的可重构辐射模式。此外,还介绍了一种基于编队的波束成形技术,该技术利用了共形辐射器之间的电磁耦合和无人机的灵活性。
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引用次数: 0
SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-Low Power Loss and Improved Short-Circuit Capability 具有分路栅极和集成肖特基势垒二极管的碳化硅双沟道 MOSFET,可实现超低功率损耗并提高短路能力
IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.23919/cje.2022.00.394
Jinping Zhang;Qinglin Wu;Zixun Chen;Hua Zou;Bo Zhang
A silicon carbide (SiC) double trench metal-oxide-semiconductor field effect transistor (DTMOS) with split gate (SG) and integrated Schottky barrier diode (SBD) is proposed for the first time. The proposed device features two enhanced deep trenches in the surface, in which a source-connected SG with a thicker dielectric layer is located at the bottom of the deep gate trench and an integrated SBD is located at the sidewall of the deep source trench (DST). Combined with shielding effect provided by the P+ shield layer under the DST and integrated SBD, the proposed structure not only reduces the reverse transfer capacitance $(C_{text{rss}})$ and gate-drain charge $(Q_{text{gd}})$ but also restrains the saturation drain current $(I_{mathrm{d},text{sat}})$ and improves the diode performance of the device. Numerical analysis results show that compared with the Con-DTMOS and Con-DTMOS with external SBD diode, the turn-on loss $(E_{text{on}})$ and turn-off loss $(E_{text{off}})$ for the proposed device are reduced by 56.4%/70.4% and 56.6%/69.9%, respectively. Moreover, the $I_{mathrm{d},text{sat}}$ at the $V_{text{gs}}$ of 18 V for the proposed device is reduced by 74.4% and the short-circuit withstand time $(t_{text{SC}})$ is improved by about 7.5 times. As a result, an ultra-low power loss and improved short-circuit capability is obtained for the proposed device.
首次提出了一种带有分裂栅极(SG)和集成肖特基势垒二极管(SBD)的碳化硅(SiC)双沟道金属氧化物半导体场效应晶体管(DTMOS)。所提出的器件在表面具有两个增强型深沟槽,其中具有较厚介电层的源连接 SG 位于深栅沟槽的底部,而集成 SBD 则位于深源沟槽(DST)的侧壁。结合 DST 下的 P+ 屏蔽层和集成 SBD 所提供的屏蔽效应,所提出的结构不仅降低了反向传输电容 $(C_{text{rss}}) $ 和栅漏电荷 $(Q_{text{gd}}) $,而且抑制了饱和漏极电流 $(I_{mathrm{d},text{sat}}) $,提高了器件的二极管性能。数值分析结果表明,与带有外部 SBD 二极管的 Con-DTMOS 和 Con-DTMOS 相比,所提出器件的导通损耗 $(E_{text{on}}) $ 和关断损耗 $(E_{text{off}})$ 分别降低了 56.4%/70.4% 和 56.6%/69.9% 。此外,在 18 V 的 $V_{text{gs}$ 条件下,拟议器件的 $I_{mathrm{d},text{sat}$ 降低了 74.4%,短路耐受时间 $(t_{text{SC}})$ 提高了约 7.5 倍。因此,该器件具有超低功率损耗和更高的短路能力。
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引用次数: 0
期刊
Chinese Journal of Electronics
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