Bo Zhang, Yu Zhang, Keliu Luo, Yonghai Guo, Ze Yan, Wenbo Lv, Bo Wang, Zhide Li, Ziyang Hu, Qi Wang, Jiangwei Cao
Spintronic devices with heavy metal/ferromagnet structures have shown potential applications for in‐memory computing. However, the sensitivity of ferromagnet to external magnetic field raises a challenge for the practical applications of these devices. The usage of synthetic antiferromagnet (SAF) can effectively address this issue due to its good magnetic field immunity. This work demonstrates the implementation of all 16 types of Boolean logic functions via controlling the magnetization states of the SAF layer by using current pulses, and also the stable multistate storage under the interference of perpendicular magnetic field in these devices. The SAF devices also exhibit synaptic plasticity under the stimulation of current pulses. The artificial neural network constructed based on the SAF device can perform handwritten digit recognition tasks with an accuracy rate of 90%. These results showcase the viability and superiority of the SAF device in building logic‐in‐memory architecture for its strong immunity to magnetic field interference.
具有重金属/铁磁体结构的自旋电子器件已显示出内存计算的潜在应用。然而，铁磁体对外部磁场的敏感性给这些器件的实际应用带来了挑战。合成反铁磁体（SAF）具有良好的磁场抗扰性，可以有效解决这一问题。这项工作展示了通过使用电流脉冲控制 SAF 层的磁化状态来实现全部 16 种布尔逻辑功能，以及在垂直磁场干扰下在这些器件中实现稳定的多态存储。在电流脉冲的刺激下，SAF 器件还表现出突触可塑性。基于 SAF 器件构建的人工神经网络可以完成手写数字识别任务，准确率高达 90%。这些结果表明，SAF 器件具有很强的抗磁场干扰能力，因此在构建内存逻辑架构方面具有可行性和优越性。
{"title":"Implementation of Logic Function and Memristive Behavior in Synthetic Antiferromagnet with Strong Immunity to Perpendicular Magnetic Field Interference","authors":"Bo Zhang, Yu Zhang, Keliu Luo, Yonghai Guo, Ze Yan, Wenbo Lv, Bo Wang, Zhide Li, Ziyang Hu, Qi Wang, Jiangwei Cao","doi":"10.1002/pssr.202400166","DOIUrl":"https://doi.org/10.1002/pssr.202400166","url":null,"abstract":"Spintronic devices with heavy metal/ferromagnet structures have shown potential applications for in‐memory computing. However, the sensitivity of ferromagnet to external magnetic field raises a challenge for the practical applications of these devices. The usage of synthetic antiferromagnet (SAF) can effectively address this issue due to its good magnetic field immunity. This work demonstrates the implementation of all 16 types of Boolean logic functions via controlling the magnetization states of the SAF layer by using current pulses, and also the stable multistate storage under the interference of perpendicular magnetic field in these devices. The SAF devices also exhibit synaptic plasticity under the stimulation of current pulses. The artificial neural network constructed based on the SAF device can perform handwritten digit recognition tasks with an accuracy rate of 90%. These results showcase the viability and superiority of the SAF device in building logic‐in‐memory architecture for its strong immunity to magnetic field interference.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"41 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141780861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiangzhen Bu, Hongbo Huang, Jiujiu Chen, Xiaoping Xie
In this article, the concept of topological rainbow is introduced into the plate‐mode waves system of 1D phononic crystal slabs, achieving adjustable topological elastic rainbow trapping by employing gradient‐tuned Su–Schrieffer–Heeger (SSH) structures. First, based on the classical SSH model, a phononic crystal slab composed of steel and aluminum is set up, and the band structure of plate‐mode waves is studied using the finite‐element method. Band inversion can be induced by changing the height of the steel in the unit cell, leading to topological phase transitions. Then, phononic crystals with different topological properties are connected to form a phononic crystal slab, realizing topological interface states. Furthermore, a sandwich‐like ultrathin structure is constructed to couple the adjacent two topological interface states. Finally, a 1D alternating SSH structure of phononic crystal slab is designed under gradient structural parameters, and based on eigenfrequency and full‐wave simulation, adjustable topological rainbow trapping based on coupled interface states is achieved. The designed device can trap wide frequencies exceeding 15 kHz, providing more possibilities for the design of elastic‐energy‐harvesting devices.
{"title":"Topological Rainbow Trapping of Plate‐Mode Waves Based on 1D Gradual Phononic Crystal Slabs","authors":"Xiangzhen Bu, Hongbo Huang, Jiujiu Chen, Xiaoping Xie","doi":"10.1002/pssr.202400205","DOIUrl":"https://doi.org/10.1002/pssr.202400205","url":null,"abstract":"In this article, the concept of topological rainbow is introduced into the plate‐mode waves system of 1D phononic crystal slabs, achieving adjustable topological elastic rainbow trapping by employing gradient‐tuned Su–Schrieffer–Heeger (SSH) structures. First, based on the classical SSH model, a phononic crystal slab composed of steel and aluminum is set up, and the band structure of plate‐mode waves is studied using the finite‐element method. Band inversion can be induced by changing the height of the steel in the unit cell, leading to topological phase transitions. Then, phononic crystals with different topological properties are connected to form a phononic crystal slab, realizing topological interface states. Furthermore, a sandwich‐like ultrathin structure is constructed to couple the adjacent two topological interface states. Finally, a 1D alternating SSH structure of phononic crystal slab is designed under gradient structural parameters, and based on eigenfrequency and full‐wave simulation, adjustable topological rainbow trapping based on coupled interface states is achieved. The designed device can trap wide frequencies exceeding 15 kHz, providing more possibilities for the design of elastic‐energy‐harvesting devices.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"4 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141780960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carlos A. I. Canhassi, Roman V. Chernozem, Polina V. Chernozem, Konstantin N. Romanyuk, Pavel Zelenovskiy, Alina O. Urakova, Evgeny Y. Gerasimov, Danila A. Koptsev, Maria A. Surmeneva, Roman A. Surmenev, Andrei L. Kholkin, Yakov Kopelevich
Magnetoelectric nanoparticles (NPs) present an important class of nanomaterials with a wide interest in piezocatalytic and biomedical applications. Herein, the results of magnetoelectric and magnetization measurements performed on core–shell NPs having magnetic core (MnFe2O4, MFO) and ferroelectric shell (Ba0.85Ca0.15Ti0.5Zr0.5O3, BCZT) synthesized by the microwave hydrothermal method are reported. Magnetic results are compared with the measurements on reference MFO NPs prepared under identical conditions. Detailed SQUID magnetometer measurements of the magnetization hysteresis loops M(H) down to 2 K reveal the existence of a clear exchange bias effect in pure MFO NPs attributed to the coexistence of ferromagnetic and antiferromagnetic short‐range interactions. When the magnetic core is covered by the thin ferroelectric BCZT shell, it is observed that 1) the shell suppresses the apparent bias effect and 2) induces an “extra” ferromagnetic magnetization at T < 20 K. The results indicate that this “extra” ferromagnetism has a 2D character and it is most likely related to the interface interactions between the MFO core and BCZT shell. Ferroelectric properties and strong magnetoelectric effect in core–shell NPs are revealed via piezoresponse force microscopy under magnetic field. The mechanisms of the observed effects are discussed.
{"title":"Ferroelectricity‐Induced Surface Ferromagnetism in Core–Shell Magnetoelectric Nanoparticles","authors":"Carlos A. I. Canhassi, Roman V. Chernozem, Polina V. Chernozem, Konstantin N. Romanyuk, Pavel Zelenovskiy, Alina O. Urakova, Evgeny Y. Gerasimov, Danila A. Koptsev, Maria A. Surmeneva, Roman A. Surmenev, Andrei L. Kholkin, Yakov Kopelevich","doi":"10.1002/pssr.202400122","DOIUrl":"https://doi.org/10.1002/pssr.202400122","url":null,"abstract":"Magnetoelectric nanoparticles (NPs) present an important class of nanomaterials with a wide interest in piezocatalytic and biomedical applications. Herein, the results of magnetoelectric and magnetization measurements performed on core–shell NPs having magnetic core (MnFe<jats:sub>2</jats:sub>O<jats:sub>4</jats:sub>, MFO) and ferroelectric shell (Ba<jats:sub>0.85</jats:sub>Ca<jats:sub>0.15</jats:sub>Ti<jats:sub>0.5</jats:sub>Zr<jats:sub>0.5</jats:sub>O<jats:sub>3</jats:sub>, BCZT) synthesized by the microwave hydrothermal method are reported. Magnetic results are compared with the measurements on reference MFO NPs prepared under identical conditions. Detailed SQUID magnetometer measurements of the magnetization hysteresis loops <jats:italic>M</jats:italic>(<jats:italic>H</jats:italic>) down to 2 K reveal the existence of a clear exchange bias effect in pure MFO NPs attributed to the coexistence of ferromagnetic and antiferromagnetic short‐range interactions. When the magnetic core is covered by the thin ferroelectric BCZT shell, it is observed that 1) the shell suppresses the apparent bias effect and 2) induces an “extra” ferromagnetic magnetization at <jats:italic>T</jats:italic> < 20 K. The results indicate that this “extra” ferromagnetism has a 2D character and it is most likely related to the interface interactions between the MFO core and BCZT shell. Ferroelectric properties and strong magnetoelectric effect in core–shell NPs are revealed via piezoresponse force microscopy under magnetic field. The mechanisms of the observed effects are discussed.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"15 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ziyi He, Kai Fu, Mingfei Xu, Jingan Zhou, Tao Li, Yuji Zhao
{"title":"Understanding the Breakdown Behavior of Ultrawide‐Bandgap Boron Nitride Power Diodes Using Device Modeling","authors":"Ziyi He, Kai Fu, Mingfei Xu, Jingan Zhou, Tao Li, Yuji Zhao","doi":"10.1002/pssr.202470015","DOIUrl":"https://doi.org/10.1002/pssr.202470015","url":null,"abstract":"","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"17 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xudong Li, Fengyun Xu, Xuan Wang, Jiangshuai Luo, Ke Ding, Liyu Ye, Honglin Li, Yuanqiang Xiong, Peng Yu, Chunyang Kong, Lijuan Ye, Hong Zhang, Wanjun Li
{"title":"Solar‐Blind Deep‐Ultraviolet Photoconductive Detector Based on Amorphous Ga2O3 Thin Films for Corona Discharge Detection","authors":"Xudong Li, Fengyun Xu, Xuan Wang, Jiangshuai Luo, Ke Ding, Liyu Ye, Honglin Li, Yuanqiang Xiong, Peng Yu, Chunyang Kong, Lijuan Ye, Hong Zhang, Wanjun Li","doi":"10.1002/pssr.202470016","DOIUrl":"https://doi.org/10.1002/pssr.202470016","url":null,"abstract":"","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"34 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xinqiang Wang, Lan Fu, Chennupati Jagadish, Huan Wang
{"title":"Recent Advances in Semiconductor Materials and Devices","authors":"Xinqiang Wang, Lan Fu, Chennupati Jagadish, Huan Wang","doi":"10.1002/pssr.202400198","DOIUrl":"https://doi.org/10.1002/pssr.202400198","url":null,"abstract":"","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"46 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Parth Garud, Kiumars Aryana, Cosmin Constantin Popescu, Steven Vitale, Rashi Sharma, Kathleen A. Richardson, Tian Gu, Juejun Hu, Hyun Jung Kim
Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for developing more efficient and compact optical systems for a broad range of applications, including sensing, imaging, telecommunications, and data storage. Chalcogenide‐based phase‐change materials (PCMs) have shown great promise due to their stable, nonvolatile phase transition between amorphous and crystalline states. Nonetheless, optimizing the switching parameters of PCM devices and maintaining their stable operation over thousands of cycles with minimal variation can be challenging. Herein, the critical role of PCM pattern as well as electrical pulse form in achieving reliable and stable switching is reported on, extending the operational lifetime of the device beyond 13000 switching events. To achieve this, a computer‐aided algorithm that monitors optical changes in the device and adjusts the applied voltage in accordance with the phase transformation process is developed, thereby significantly enhancing the lifetime of these reconfigurable devices. The findings reveal that patterned PCM structures show significantly higher endurance compared to blanket PCM thin films.
{"title":"Robust Electrothermal Switching of Optical Phase‐Change Materials through Computer‐Aided Adaptive Pulse Optimization","authors":"Parth Garud, Kiumars Aryana, Cosmin Constantin Popescu, Steven Vitale, Rashi Sharma, Kathleen A. Richardson, Tian Gu, Juejun Hu, Hyun Jung Kim","doi":"10.1002/pssr.202400177","DOIUrl":"https://doi.org/10.1002/pssr.202400177","url":null,"abstract":"Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for developing more efficient and compact optical systems for a broad range of applications, including sensing, imaging, telecommunications, and data storage. Chalcogenide‐based phase‐change materials (PCMs) have shown great promise due to their stable, nonvolatile phase transition between amorphous and crystalline states. Nonetheless, optimizing the switching parameters of PCM devices and maintaining their stable operation over thousands of cycles with minimal variation can be challenging. Herein, the critical role of PCM pattern as well as electrical pulse form in achieving reliable and stable switching is reported on, extending the operational lifetime of the device beyond 13000 switching events. To achieve this, a computer‐aided algorithm that monitors optical changes in the device and adjusts the applied voltage in accordance with the phase transformation process is developed, thereby significantly enhancing the lifetime of these reconfigurable devices. The findings reveal that patterned PCM structures show significantly higher endurance compared to blanket PCM thin films.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"75 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141721195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hyeonwook Lim, Chang Woo Lee, Dasol Kim, Mann-Ho Cho
Interfacial phase‐change materials (iPCM), which are alternatively stacked with GeTe and Sb2Te3 in the superlattice structure, have been highlighted as next‐generation PCM with improved overall phase‐change characteristics. However, several studies have reported that a melt‐quenching process, whereby the initial superlattice structure is not maintained within the reversible switching process, rather than the initially proposed melting‐free phase‐change mechanism, occurs during operation. Herein, GeSbTe superlattices were synthesized using molecular beam epitaxy, and the reversible phases of the superlattice obtained by irradiation with an optical pulsed laser (KrF; 280 nm, 25 ns) and re‐annealing or by applying different electrical pulses were investigated through careful structural analyses. The results revealed that Te atoms are aligned parallel to the interface regardless of the reversible phase, whereas cations and inherent vacancies are distributed differently during the phase‐change process. The stability of memory cells with cycling operations can be enhanced by enriching inherent vacancies, and the switching energy can be reduced by expanding the interspaces via doping engineering.This article is protected by copyright. All rights reserved.
{"title":"Developing GeSbTe superlattice through understanding of the reversible phases and engineering its interspaces","authors":"Hyeonwook Lim, Chang Woo Lee, Dasol Kim, Mann-Ho Cho","doi":"10.1002/pssr.202300419","DOIUrl":"https://doi.org/10.1002/pssr.202300419","url":null,"abstract":"Interfacial phase‐change materials (iPCM), which are alternatively stacked with GeTe and Sb<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub> in the superlattice structure, have been highlighted as next‐generation PCM with improved overall phase‐change characteristics. However, several studies have reported that a melt‐quenching process, whereby the initial superlattice structure is not maintained within the reversible switching process, rather than the initially proposed melting‐free phase‐change mechanism, occurs during operation. Herein, GeSbTe superlattices were synthesized using molecular beam epitaxy, and the reversible phases of the superlattice obtained by irradiation with an optical pulsed laser (KrF; 280 nm, 25 ns) and re‐annealing or by applying different electrical pulses were investigated through careful structural analyses. The results revealed that Te atoms are aligned parallel to the interface regardless of the reversible phase, whereas cations and inherent vacancies are distributed differently during the phase‐change process. The stability of memory cells with cycling operations can be enhanced by enriching inherent vacancies, and the switching energy can be reduced by expanding the interspaces via doping engineering.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"37 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141529024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The factors limiting channel mobility in AlSiO/p‐type GaN metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) were examined by performing Hall‐effect measurements in conjunction with a gate bias, with and without a thin AlN interlayer. In the absence of this interlayer, the free carrier concentration associated with the Hall effect was significantly reduced compared with the net gate charge density estimated from capacitance–voltage data, indicating that electrons were trapped to a significant extent at the MOS interface. These interface traps were found to have an energy approximately 20 meV above the Fermi level in strong inversion based on temperature‐dependent Hall effect data. The insertion of a 0.8 nm thick AlN interlayer eliminated charge trapping such that almost all gate charges were mobile. The mobility components could be divided into types based on their effect on the effective electric field perpendicular to the channel. Coulomb scattering centers resulting from interface states were evidently reduced by inserting the AlN interlayer, which also enhanced the channel mobility to over 150 cm2/Vs.This article is protected by copyright. All rights reserved.
{"title":"Transport Properties in GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack","authors":"Tetsuo Narita, Kenji Ito, Kazuyoshi Tomita, Hiroko Iguchi, Shiro Iwasaki, Masahiro Horita, Emi Kano, Nobuyuki Ikarashi, Daigo Kikuta","doi":"10.1002/pssr.202400141","DOIUrl":"https://doi.org/10.1002/pssr.202400141","url":null,"abstract":"The factors limiting channel mobility in AlSiO/p‐type GaN metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) were examined by performing Hall‐effect measurements in conjunction with a gate bias, with and without a thin AlN interlayer. In the absence of this interlayer, the free carrier concentration associated with the Hall effect was significantly reduced compared with the net gate charge density estimated from capacitance–voltage data, indicating that electrons were trapped to a significant extent at the MOS interface. These interface traps were found to have an energy approximately 20 meV above the Fermi level in strong inversion based on temperature‐dependent Hall effect data. The insertion of a 0.8 nm thick AlN interlayer eliminated charge trapping such that almost all gate charges were mobile. The mobility components could be divided into types based on their effect on the effective electric field perpendicular to the channel. Coulomb scattering centers resulting from interface states were evidently reduced by inserting the AlN interlayer, which also enhanced the channel mobility to over 150 cm<jats:sup>2</jats:sup>/Vs.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"21 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141503558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report integration of organic photodetector and organic spin valve in a single physical device – ITO/V[TCNE]2/rubrene/Co/Au magnetic organic photodetector heterostructure. Generation of photocurrent with more than 43.3% photocurrent to dark current ratio is revealed in this device under illumination of 660 nm red laser light at 0.4 V electrical bias. Moreover, room temperature spin valve response with up to 7.7% spin valve magnetoresistance peak is found at 138 Oe in the same heterostructure. Such intriguing coexistence of photocurrent generation and spin valve effect at room temperature in a single magnetic organic photodetector heterostructure paves the way for development of eco‐friendly all‐organic next generation multifunctional opto‐spintronics devices.This article is protected by copyright. All rights reserved.
{"title":"Coexistence of Room Temperature Optical Response and Spin Valve Characteristics in ITO/V[TCNE]2/Rubrene/Co/Au Magnetic Organic Photodetector Heterostructure","authors":"Apurba Pal, J. N. Roy, P. Dey, S. M. Yusuf","doi":"10.1002/pssr.202400113","DOIUrl":"https://doi.org/10.1002/pssr.202400113","url":null,"abstract":"We report integration of organic photodetector and organic spin valve in a single physical device – ITO/V[TCNE]<jats:sub>2</jats:sub>/rubrene/Co/Au magnetic organic photodetector heterostructure. Generation of photocurrent with more than 43.3% photocurrent to dark current ratio is revealed in this device under illumination of 660 nm red laser light at 0.4 V electrical bias. Moreover, room temperature spin valve response with up to 7.7% spin valve magnetoresistance peak is found at 138 Oe in the same heterostructure. Such intriguing coexistence of photocurrent generation and spin valve effect at room temperature in a single magnetic organic photodetector heterostructure paves the way for development of eco‐friendly all‐organic next generation multifunctional opto‐spintronics devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"28 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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