Ziyi He, Kai Fu, Mingfei Xu, Jingan Zhou, Tao Li, Yuji Zhao
{"title":"Understanding the Breakdown Behavior of Ultrawide‐Bandgap Boron Nitride Power Diodes Using Device Modeling","authors":"Ziyi He, Kai Fu, Mingfei Xu, Jingan Zhou, Tao Li, Yuji Zhao","doi":"10.1002/pssr.202470015","DOIUrl":"https://doi.org/10.1002/pssr.202470015","url":null,"abstract":"","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xudong Li, Fengyun Xu, Xuan Wang, Jiangshuai Luo, Ke Ding, Liyu Ye, Honglin Li, Yuanqiang Xiong, Peng Yu, Chunyang Kong, Lijuan Ye, Hong Zhang, Wanjun Li
{"title":"Solar‐Blind Deep‐Ultraviolet Photoconductive Detector Based on Amorphous Ga2O3 Thin Films for Corona Discharge Detection","authors":"Xudong Li, Fengyun Xu, Xuan Wang, Jiangshuai Luo, Ke Ding, Liyu Ye, Honglin Li, Yuanqiang Xiong, Peng Yu, Chunyang Kong, Lijuan Ye, Hong Zhang, Wanjun Li","doi":"10.1002/pssr.202470016","DOIUrl":"https://doi.org/10.1002/pssr.202470016","url":null,"abstract":"","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xinqiang Wang, Lan Fu, Chennupati Jagadish, Huan Wang
{"title":"Recent Advances in Semiconductor Materials and Devices","authors":"Xinqiang Wang, Lan Fu, Chennupati Jagadish, Huan Wang","doi":"10.1002/pssr.202400198","DOIUrl":"https://doi.org/10.1002/pssr.202400198","url":null,"abstract":"","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Parth Garud, Kiumars Aryana, Cosmin Constantin Popescu, Steven Vitale, Rashi Sharma, Kathleen A. Richardson, Tian Gu, Juejun Hu, Hyun Jung Kim
Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for developing more efficient and compact optical systems for a broad range of applications, including sensing, imaging, telecommunications, and data storage. Chalcogenide‐based phase‐change materials (PCMs) have shown great promise due to their stable, nonvolatile phase transition between amorphous and crystalline states. Nonetheless, optimizing the switching parameters of PCM devices and maintaining their stable operation over thousands of cycles with minimal variation can be challenging. Herein, the critical role of PCM pattern as well as electrical pulse form in achieving reliable and stable switching is reported on, extending the operational lifetime of the device beyond 13000 switching events. To achieve this, a computer‐aided algorithm that monitors optical changes in the device and adjusts the applied voltage in accordance with the phase transformation process is developed, thereby significantly enhancing the lifetime of these reconfigurable devices. The findings reveal that patterned PCM structures show significantly higher endurance compared to blanket PCM thin films.
{"title":"Robust Electrothermal Switching of Optical Phase‐Change Materials through Computer‐Aided Adaptive Pulse Optimization","authors":"Parth Garud, Kiumars Aryana, Cosmin Constantin Popescu, Steven Vitale, Rashi Sharma, Kathleen A. Richardson, Tian Gu, Juejun Hu, Hyun Jung Kim","doi":"10.1002/pssr.202400177","DOIUrl":"https://doi.org/10.1002/pssr.202400177","url":null,"abstract":"Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for developing more efficient and compact optical systems for a broad range of applications, including sensing, imaging, telecommunications, and data storage. Chalcogenide‐based phase‐change materials (PCMs) have shown great promise due to their stable, nonvolatile phase transition between amorphous and crystalline states. Nonetheless, optimizing the switching parameters of PCM devices and maintaining their stable operation over thousands of cycles with minimal variation can be challenging. Herein, the critical role of PCM pattern as well as electrical pulse form in achieving reliable and stable switching is reported on, extending the operational lifetime of the device beyond 13000 switching events. To achieve this, a computer‐aided algorithm that monitors optical changes in the device and adjusts the applied voltage in accordance with the phase transformation process is developed, thereby significantly enhancing the lifetime of these reconfigurable devices. The findings reveal that patterned PCM structures show significantly higher endurance compared to blanket PCM thin films.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141721195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hyeonwook Lim, Chang Woo Lee, Dasol Kim, Mann-Ho Cho
Interfacial phase‐change materials (iPCM), which are alternatively stacked with GeTe and Sb2Te3 in the superlattice structure, have been highlighted as next‐generation PCM with improved overall phase‐change characteristics. However, several studies have reported that a melt‐quenching process, whereby the initial superlattice structure is not maintained within the reversible switching process, rather than the initially proposed melting‐free phase‐change mechanism, occurs during operation. Herein, GeSbTe superlattices were synthesized using molecular beam epitaxy, and the reversible phases of the superlattice obtained by irradiation with an optical pulsed laser (KrF; 280 nm, 25 ns) and re‐annealing or by applying different electrical pulses were investigated through careful structural analyses. The results revealed that Te atoms are aligned parallel to the interface regardless of the reversible phase, whereas cations and inherent vacancies are distributed differently during the phase‐change process. The stability of memory cells with cycling operations can be enhanced by enriching inherent vacancies, and the switching energy can be reduced by expanding the interspaces via doping engineering.This article is protected by copyright. All rights reserved.
{"title":"Developing GeSbTe superlattice through understanding of the reversible phases and engineering its interspaces","authors":"Hyeonwook Lim, Chang Woo Lee, Dasol Kim, Mann-Ho Cho","doi":"10.1002/pssr.202300419","DOIUrl":"https://doi.org/10.1002/pssr.202300419","url":null,"abstract":"Interfacial phase‐change materials (iPCM), which are alternatively stacked with GeTe and Sb<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub> in the superlattice structure, have been highlighted as next‐generation PCM with improved overall phase‐change characteristics. However, several studies have reported that a melt‐quenching process, whereby the initial superlattice structure is not maintained within the reversible switching process, rather than the initially proposed melting‐free phase‐change mechanism, occurs during operation. Herein, GeSbTe superlattices were synthesized using molecular beam epitaxy, and the reversible phases of the superlattice obtained by irradiation with an optical pulsed laser (KrF; 280 nm, 25 ns) and re‐annealing or by applying different electrical pulses were investigated through careful structural analyses. The results revealed that Te atoms are aligned parallel to the interface regardless of the reversible phase, whereas cations and inherent vacancies are distributed differently during the phase‐change process. The stability of memory cells with cycling operations can be enhanced by enriching inherent vacancies, and the switching energy can be reduced by expanding the interspaces via doping engineering.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141529024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report integration of organic photodetector and organic spin valve in a single physical device – ITO/V[TCNE]2/rubrene/Co/Au magnetic organic photodetector heterostructure. Generation of photocurrent with more than 43.3% photocurrent to dark current ratio is revealed in this device under illumination of 660 nm red laser light at 0.4 V electrical bias. Moreover, room temperature spin valve response with up to 7.7% spin valve magnetoresistance peak is found at 138 Oe in the same heterostructure. Such intriguing coexistence of photocurrent generation and spin valve effect at room temperature in a single magnetic organic photodetector heterostructure paves the way for development of eco‐friendly all‐organic next generation multifunctional opto‐spintronics devices.This article is protected by copyright. All rights reserved.
{"title":"Coexistence of Room Temperature Optical Response and Spin Valve Characteristics in ITO/V[TCNE]2/Rubrene/Co/Au Magnetic Organic Photodetector Heterostructure","authors":"Apurba Pal, J. N. Roy, P. Dey, S. M. Yusuf","doi":"10.1002/pssr.202400113","DOIUrl":"https://doi.org/10.1002/pssr.202400113","url":null,"abstract":"We report integration of organic photodetector and organic spin valve in a single physical device – ITO/V[TCNE]<jats:sub>2</jats:sub>/rubrene/Co/Au magnetic organic photodetector heterostructure. Generation of photocurrent with more than 43.3% photocurrent to dark current ratio is revealed in this device under illumination of 660 nm red laser light at 0.4 V electrical bias. Moreover, room temperature spin valve response with up to 7.7% spin valve magnetoresistance peak is found at 138 Oe in the same heterostructure. Such intriguing coexistence of photocurrent generation and spin valve effect at room temperature in a single magnetic organic photodetector heterostructure paves the way for development of eco‐friendly all‐organic next generation multifunctional opto‐spintronics devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The factors limiting channel mobility in AlSiO/p‐type GaN metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) were examined by performing Hall‐effect measurements in conjunction with a gate bias, with and without a thin AlN interlayer. In the absence of this interlayer, the free carrier concentration associated with the Hall effect was significantly reduced compared with the net gate charge density estimated from capacitance–voltage data, indicating that electrons were trapped to a significant extent at the MOS interface. These interface traps were found to have an energy approximately 20 meV above the Fermi level in strong inversion based on temperature‐dependent Hall effect data. The insertion of a 0.8 nm thick AlN interlayer eliminated charge trapping such that almost all gate charges were mobile. The mobility components could be divided into types based on their effect on the effective electric field perpendicular to the channel. Coulomb scattering centers resulting from interface states were evidently reduced by inserting the AlN interlayer, which also enhanced the channel mobility to over 150 cm2/Vs.This article is protected by copyright. All rights reserved.
{"title":"Transport Properties in GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack","authors":"Tetsuo Narita, Kenji Ito, Kazuyoshi Tomita, Hiroko Iguchi, Shiro Iwasaki, Masahiro Horita, Emi Kano, Nobuyuki Ikarashi, Daigo Kikuta","doi":"10.1002/pssr.202400141","DOIUrl":"https://doi.org/10.1002/pssr.202400141","url":null,"abstract":"The factors limiting channel mobility in AlSiO/p‐type GaN metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) were examined by performing Hall‐effect measurements in conjunction with a gate bias, with and without a thin AlN interlayer. In the absence of this interlayer, the free carrier concentration associated with the Hall effect was significantly reduced compared with the net gate charge density estimated from capacitance–voltage data, indicating that electrons were trapped to a significant extent at the MOS interface. These interface traps were found to have an energy approximately 20 meV above the Fermi level in strong inversion based on temperature‐dependent Hall effect data. The insertion of a 0.8 nm thick AlN interlayer eliminated charge trapping such that almost all gate charges were mobile. The mobility components could be divided into types based on their effect on the effective electric field perpendicular to the channel. Coulomb scattering centers resulting from interface states were evidently reduced by inserting the AlN interlayer, which also enhanced the channel mobility to over 150 cm<jats:sup>2</jats:sup>/Vs.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141503558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Schottky contact between metal electrode and armchair graphene nanoribbon (AGNR) plays a fundamental role in limiting the current flow as well as the overall device characteristics. To improve device performance, the metal electrode must be engineered to lower barrier height and allow low‐resistance ohmic contact. Nevertheless, in most cases this gives rise to interfacial states which dictate the contact properties and induce Fermi level pinning. Here we demonstrate another strategy to form robust and transparent 7‐atom‐wide‐AGNR (7‐AGNR)/Au contacts in which direct C‐Au σ bond is initialized by the tip of scanning tunneling microscope (STM) on a dehydrogenated terminus. This process has led to a total lift‐off of 7‐AGNR from the Au(111) substrate and allowed us to visualize the details of the band structure of 7‐AGNR. Furthermore, we find GNR useful as a STM tip for high‐resolution selective imaging of edge states showing a unique interference pattern with a periodicity that coincides with half of Fermi wavelength of GNR lattice. The combination of imaging and tunneling spectroscopy with GNR‐tip is promising for unraveling intrinsic details in the band structure which are of fundamental importance to understand the transport properties of GNRs devices.This article is protected by copyright. All rights reserved.
{"title":"Robust Contact by Direct Formation of C‐Au Bond in Suspended Armchair Graphene Nanoribbon","authors":"Abdou Hassanien","doi":"10.1002/pssr.202400192","DOIUrl":"https://doi.org/10.1002/pssr.202400192","url":null,"abstract":"The Schottky contact between metal electrode and armchair graphene nanoribbon (AGNR) plays a fundamental role in limiting the current flow as well as the overall device characteristics. To improve device performance, the metal electrode must be engineered to lower barrier height and allow low‐resistance ohmic contact. Nevertheless, in most cases this gives rise to interfacial states which dictate the contact properties and induce Fermi level pinning. Here we demonstrate another strategy to form robust and transparent 7‐atom‐wide‐AGNR (7‐AGNR)/Au contacts in which direct C‐Au σ bond is initialized by the tip of scanning tunneling microscope (STM) on a dehydrogenated terminus. This process has led to a total lift‐off of 7‐AGNR from the Au(111) substrate and allowed us to visualize the details of the band structure of 7‐AGNR. Furthermore, we find GNR useful as a STM tip for high‐resolution selective imaging of edge states showing a unique interference pattern with a periodicity that coincides with half of Fermi wavelength of GNR lattice. The combination of imaging and tunneling spectroscopy with GNR‐tip is promising for unraveling intrinsic details in the band structure which are of fundamental importance to understand the transport properties of GNRs devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wide‐bandgap zinc oxide (ZnO)‐based light‐emitting diodes (LEDs) have attracted considerable interest for application in solid‐state lighting; however, the absence of dependable high‐quality homojunctions has impeded their progress. A p‐n homojunction LED is fabricated in this study using arc discharge‐fabricated N‐doped ZnO nanoparticles (NPs) spin‐coated over a Ga‐doped ZnO thin film. The homojunction LEDs demonstrate pure ultraviolet (UV) emissions with a narrow linewidth even at elevated temperatures. The UV intensity initially increases as the injection current increases to the saturation limit with a change in the peak position, followed by a decrease at higher injection currents. A proportion of UV light is down‐converted into visible light using phosphors. Furthermore, the mixing of phosphors and their application to a UV‐LED results in white emission with high color rendering and superior optical stability. Notably, the visible spectral peaks do not discernibly change with variations in the operating current. These findings represent significant advancements in the development of stable p‐type ZnO nanostructures, leading to the development of cost‐effective photonic devices.This article is protected by copyright. All rights reserved.
基于宽带隙氧化锌（ZnO）的发光二极管（LED）在固态照明中的应用引起了人们的极大兴趣；然而，由于缺乏可靠的高质量同质结，阻碍了其发展。本研究利用电弧放电制造出的掺杂 N 的氧化锌纳米颗粒（NPs）旋涂在掺杂 Ga 的氧化锌薄膜上，制造出了 p-n 同质结 LED。这种同质结 LED 即使在高温下也能发出线宽较窄的纯紫外线 (UV) 光。当注入电流增加到饱和极限时，紫外线强度会随着峰值位置的变化而增加，随后在注入电流较大时会减弱。一部分紫外光通过荧光粉向下转换为可见光。此外，混合荧光粉并将其应用于紫外发光二极管可产生白光，具有高显色性和出色的光学稳定性。值得注意的是，可见光谱峰值不会随着工作电流的变化而发生明显变化。这些发现标志着在开发稳定的 p 型氧化锌纳米结构方面取得了重大进展，有助于开发出具有成本效益的光子设备。本文受版权保护。
{"title":"Full‐Color Electroluminescence from ZnO‐Nanoparticles‐based Homojunction Diodes","authors":"Raj Deep, Toshiyuki Yoshida, Yasuhisa Fujita","doi":"10.1002/pssr.202400149","DOIUrl":"https://doi.org/10.1002/pssr.202400149","url":null,"abstract":"Wide‐bandgap zinc oxide (ZnO)‐based light‐emitting diodes (LEDs) have attracted considerable interest for application in solid‐state lighting; however, the absence of dependable high‐quality homojunctions has impeded their progress. A p‐n homojunction LED is fabricated in this study using arc discharge‐fabricated N‐doped ZnO nanoparticles (NPs) spin‐coated over a Ga‐doped ZnO thin film. The homojunction LEDs demonstrate pure ultraviolet (UV) emissions with a narrow linewidth even at elevated temperatures. The UV intensity initially increases as the injection current increases to the saturation limit with a change in the peak position, followed by a decrease at higher injection currents. A proportion of UV light is down‐converted into visible light using phosphors. Furthermore, the mixing of phosphors and their application to a UV‐LED results in white emission with high color rendering and superior optical stability. Notably, the visible spectral peaks do not discernibly change with variations in the operating current. These findings represent significant advancements in the development of stable p‐type ZnO nanostructures, leading to the development of cost‐effective photonic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Feyza Sonmez, Sukru Ardali, Burcu Arpapay, Selman Mutlu, Ayse Aygul Ergurhan, Onur Senel, Ugur Serincan, Ayse Erol, Engin Tiras
The novel XOR, OR, and NAND optical logic gates have been investigated using GaAs‐based Hot Electron Light Emission and Lasing in Semiconductor Heterostructures (HELLISH) devices. The HELLISH devices are fabricated in the Top Hat Hot HELLISH (TH‐HELLISH) geometry to achieve a non‐linear potential distribution at the p‐n junction which consists of a 13 nm thick GaAs quantum well placed on the n‐side of the junction. Logic gates whose input part is designed as an electric field output beam incorporate four independent contacts to the p‐ and n‐type layers. Electroluminescence measurements of the output beam are performed by applying a pulsed voltage of approximately 150 V with a pulse width of 200 ns and a frequency of 20 kHz to the contacts of the TH‐HELLISH device. At room temperature, the primary emission wavelength of the optical logic gates is around 840±1 nm. It is expected that optical logic gates obtained using this type of GaAs semiconductor structure have crucial potential to be components for high‐speed optical communication technology due to their simplicity, polarity‐independent operation, and emission wavelength.This article is protected by copyright. All rights reserved.
{"title":"Light Logic Gates with GaAs‐Based Structures","authors":"Feyza Sonmez, Sukru Ardali, Burcu Arpapay, Selman Mutlu, Ayse Aygul Ergurhan, Onur Senel, Ugur Serincan, Ayse Erol, Engin Tiras","doi":"10.1002/pssr.202400173","DOIUrl":"https://doi.org/10.1002/pssr.202400173","url":null,"abstract":"The novel XOR, OR, and NAND optical logic gates have been investigated using GaAs‐based Hot Electron Light Emission and Lasing in Semiconductor Heterostructures (HELLISH) devices. The HELLISH devices are fabricated in the Top Hat Hot HELLISH (TH‐HELLISH) geometry to achieve a non‐linear potential distribution at the p‐n junction which consists of a 13 nm thick GaAs quantum well placed on the n‐side of the junction. Logic gates whose input part is designed as an electric field output beam incorporate four independent contacts to the p‐ and n‐type layers. Electroluminescence measurements of the output beam are performed by applying a pulsed voltage of approximately 150 V with a pulse width of 200 ns and a frequency of 20 kHz to the contacts of the TH‐HELLISH device. At room temperature, the primary emission wavelength of the optical logic gates is around 840±1 nm. It is expected that optical logic gates obtained using this type of GaAs semiconductor structure have crucial potential to be components for high‐speed optical communication technology due to their simplicity, polarity‐independent operation, and emission wavelength.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141518744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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